IRF3710SPBF N-Channel 100V 57A MOSFET Equivalent & Substitute Parts

Part Overview

The IRF3710SPBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 100V drain-to-source voltage and 57A continuous drain current in a D2PAK surface mount package. This device is classified as discontinued at DiGi Electronics, necessitating identification of functionally equivalent alternatives for ongoing production and maintenance applications. The part operates across a temperature range of -55°C to 175°C and dissipates up to 200W at the case temperature, making it suitable for power switching applications requiring moderate current handling and thermal performance.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	100	V
Continuous Drain Current (Id) @ 25°C	57	A (Tc)
On-State Resistance (Rds On) @ 28A, 10V	23	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	130	nC
Power Dissipation (Max)	200	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	D2PAK (TO-263-3)	Surface Mount
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the IRF3710SPBF is determined by strict alignment of the following electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 100V
Continuous Drain Current (Id): Must equal or exceed 57A at 25°C
Package Type: Must be D2PAK (TO-263-3) surface mount
Gate Threshold Voltage (Vgs(th)): Must be compatible with 10V drive voltage
Operating Temperature Range: Must span -55°C to 175°C minimum
RoHS Compliance: Must maintain ROHS3 Compliant status

Secondary Compatibility Parameters:

On-State Resistance (Rds On): Lower values indicate improved performance
Gate Charge (Qg): Lower values reduce switching losses
Power Dissipation: Higher ratings provide thermal margin

Substitute parts are grouped into two categories: Direct Equivalents (matching all primary criteria within the D2PAK package) and Performance Alternatives (exceeding current or voltage ratings while maintaining package compatibility).

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Power (W)	Package	Status
IRF3710SPBF	Infineon	100	57	23 @ 28A, 10V	130 @ 10V	200	D2PAK	Discontinued
PSMN016-100BS,118	Nexperia	100	57	16 @ 15A, 10V	49 @ 10V	148	D2PAK	Active
PHB45NQ10T,118	Nexperia	100	47	25 @ 25A, 10V	61 @ 10V	150	D2PAK	Active
PSMN015-100B,118	Nexperia	100	75	15 @ 25A, 10V	90 @ 10V	300	D2PAK	Active
STB80NF10T4	STMicroelectronics	100	80	15 @ 40A, 10V	182 @ 10V	300	D2PAK	Active
IXTA80N12T2	IXYS	120	80	17 @ 40A, 10V	80 @ 10V	325	TO-263AA	Active
BUK7626-100B,118	Nexperia	100	49	26 @ 25A, 10V	38 @ 10V	157	D2PAK	Obsolete
PHB27NQ10T,118	Nexperia	100	28	50 @ 14A, 10V	30 @ 10V	107	D2PAK	Active
STB40NF10LT4	STMicroelectronics	100	40	33 @ 20A, 10V	64 @ 4.5V	150	D2PAK	Active
IPB50N10S3L16ATMA1	Infineon	100	50	15.4 @ 50A, 10V	64 @ 10V	100	PG-TO263-3-2	Active
PSMN009-100B,118	Nexperia	100	75	8.8 @ 25A, 10V	156 @ 10V	230	D2PAK	Active

Engineering Selection Recommendations

Primary Recommendation: PSMN016-100BS,118

The PSMN016-100BS,118 from Nexperia provides the closest functional match to the IRF3710SPBF. Both devices share identical Vdss (100V) and Id (57A) ratings, operate within the same temperature range (-55°C to 175°C), and are packaged in D2PAK. The PSMN016-100BS,118 is currently in Active production status, ensuring long-term availability. The device exhibits superior on-state resistance (16 mOhm versus 23 mOhm) and lower gate charge (49 nC versus 130 nC), resulting in reduced conduction and switching losses. ROHS3 compliance is maintained. This part is suitable for direct substitution in applications where the IRF3710SPBF was originally specified.

Secondary Recommendation: STB80NF10T4

The STB80NF10T4 from STMicroelectronics exceeds the current rating (80A versus 57A) while maintaining the 100V voltage specification and D2PAK package. This device provides additional thermal headroom with 300W power dissipation and is in Active production status. The lower on-state resistance (15 mOhm) and higher current capability make this part suitable for applications requiring enhanced performance margins or where thermal management is critical.

Alternative for Current-Limited Applications: PHB45NQ10T,118

The PHB45NQ10T,118 from Nexperia is rated for 47A continuous drain current, which falls below the IRF3710SPBF specification. This part is suitable only for applications where the actual operating current does not exceed 47A. It offers lower power dissipation (150W) and is in Active production status with ROHS3 compliance.

Not Recommended: BUK7626-100B,118

Although the BUK7626-100B,118 matches the 100V/49A electrical specification, its Obsolete product status makes it unsuitable for new designs or long-term production support.

Not Recommended: IPB50N10S3L16ATMA1

The IPB50N10S3L16ATMA1 is rated for only 50A continuous drain current, below the 57A requirement. Additionally, the package designation (PG-TO263-3-2) differs from the standard D2PAK, potentially requiring PCB layout modifications.

Frequently Asked Questions (FAQ)

Q1: Can the PSMN016-100BS,118 be used as a direct replacement for the IRF3710SPBF without circuit modifications?

A: Yes. Both devices share identical Vdss (100V) and Id (57A) ratings, operate across the same temperature range (-55°C to 175°C), and use the D2PAK package. The PSMN016-100BS,118 exhibits improved electrical characteristics (lower Rds On and Qg), which are beneficial in most applications. No circuit modifications are required.

Q2: What is the significance of the lower gate charge (Qg) in substitute parts?

A: Gate charge directly affects switching speed and driver power consumption. Lower Qg values reduce the charge that must be supplied or removed during switching transitions, resulting in faster switching times and lower gate driver losses. This is particularly important in high-frequency switching applications.

Q3: Why do some substitute parts have higher current ratings than the IRF3710SPBF?

A: Higher current ratings provide design margin and thermal headroom. Parts such as STB80NF10T4 (80A) and PSMN015-100B,118 (75A) can handle the same 57A application with reduced junction temperature rise, extending device lifetime and improving reliability.

Q4: Is the IXTA80N12T2 a suitable substitute despite its higher voltage rating (120V)?

A: The IXTA80N12T2 exceeds the voltage specification (120V versus 100V), which is acceptable from a component perspective. However, the package designation (TO-263AA) differs from the standard D2PAK, and the part is manufactured by IXYS rather than Infineon or Nexperia. Verify PCB footprint compatibility before selection.

Q5: What does ROHS3 Compliant status mean for substitution?

A: ROHS3 Compliant indicates the device meets Restriction of Hazardous Substances Directive requirements, ensuring environmental and regulatory compliance. All recommended substitutes maintain this compliance status, making them suitable for applications requiring ROHS certification.

Q6: Can PHB27NQ10T,118 be used in applications originally designed for the IRF3710SPBF?

A: No. The PHB27NQ10T,118 is rated for only 28A continuous drain current, which is insufficient for applications requiring the full 57A capability of the IRF3710SPBF. This part is suitable only for lower-current applications.

Q7: Why is the BUK7626-100B,118 not recommended despite matching electrical specifications?

A: The BUK7626-100B,118 carries an Obsolete product status, indicating it is no longer in production and availability is limited. For new designs and long-term production support, Active status parts such as PSMN016-100BS,118 or STB80NF10T4 are preferred.

Q8: How does on-state resistance (Rds On) affect device selection?

A: On-state resistance determines conduction losses when the device is in the ON state. Lower Rds On values reduce power dissipation and heat generation. The PSMN016-100BS,118 (16 mOhm) exhibits lower losses than the IRF3710SPBF (23 mOhm), making it more efficient in continuous conduction applications.

Q9: Are there any thermal considerations when substituting the IRF3710SPBF?

A: Yes. The IRF3710SPBF dissipates 200W maximum at case temperature. Substitute parts with higher power ratings (such as STB80NF10T4 at 300W) provide additional thermal margin, reducing junction temperature rise under the same operating conditions. This is beneficial for reliability and device longevity.

Q10: What is the difference between Tc and Tj temperature specifications?

A: Tc refers to case temperature, while Tj refers to junction temperature. The IRF3710SPBF specifies operating range as -55°C to 175°C (TJ). All recommended substitutes maintain this same junction temperature range, ensuring thermal compatibility.

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