IRF3709ZPBF Equivalent & Substitute Parts

Part Overview

The IRF3709ZPBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 30V drain-to-source voltage with 87A continuous drain current at 25°C. This device features the HEXFET® series technology in a Through Hole TO-220AB package configuration. The IRF3709ZPBF is classified as Obsolete product status, making identification of functionally equivalent substitute components necessary for ongoing design support and procurement continuity. Substitute parts must maintain compatibility across electrical ratings, thermal characteristics, and mechanical packaging to ensure direct replacement capability in existing circuit applications.

Key Parameters

Parameter	IRF3709ZPBF
Manufacturer	Infineon Technologies
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	87 A (Tc)
Rds On (Max) @ Id, Vgs	6.3 mOhm @ 21A, 10V
Vgs(th) (Max) @ Id	2.25 V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	26 nC @ 4.5 V
Power Dissipation (Max)	79 W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-220-3
Product Status	Obsolete
RoHS Status	ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution eligibility for the IRF3709ZPBF is determined by the following critical parameters:

Electrical Compatibility Requirements:

Drain to Source Voltage (Vdss): Must equal or exceed 30V
Continuous Drain Current (Id): Must equal or exceed 87A at 25°C
Gate-Source Voltage (Vgs): Must support ±20V maximum rating
Operating Temperature Range: Must encompass -55°C to 175°C (TJ)

Mechanical Compatibility Requirements:

Mounting Type: Through Hole configuration
Package / Case: TO-220-3 footprint

Regulatory Compliance:

RoHS3 Compliance required
REACH Unaffected status required

All substitute parts listed below satisfy these mandatory criteria, enabling direct functional replacement in applications designed for the IRF3709ZPBF.

Parameter Comparison

Parameter	IRF3709ZPBF	IRLB8748PBF	PSMN4R3-30PL,127	STP160N3LL
Manufacturer	Infineon Technologies	Infineon Technologies	Nexperia USA Inc.	STMicroelectronics
FET Type	N-Channel	N-Channel	N-Channel	N-Channel
Vdss	30 V	30 V	30 V	30 V
Id @ 25°C	87 A (Tc)	92 A (Tc)	100 A (Tc)	120 A (Tc)
Rds On (Max)	6.3 mOhm @ 21A, 10V	4.8 mOhm @ 40A, 10V	4.3 mOhm @ 15A, 10V	3.2 mOhm @ 60A, 10V
Vgs(th) (Max)	2.25 V @ 250µA	2.35 V @ 50µA	2.15 V @ 1mA	2.5 V @ 250µA
Gate Charge (Qg) (Max)	26 nC @ 4.5 V	23 nC @ 4.5 V	41.5 nC @ 10 V	42 nC @ 4.5 V
Power Dissipation (Max)	79 W (Tc)	75 W (Tc)	103 W (Tc)	136 W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)	-55°C ~ 175°C (TJ)	-55°C ~ 175°C (TJ)	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-220-3	TO-220-3	TO-220-3	TO-220-3
Product Status	Obsolete	Active	Obsolete	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

IRLB8748PBF (Infineon Technologies)

The IRLB8748PBF is an Active product status substitute manufactured by Infineon Technologies. This device exceeds the IRF3709ZPBF electrical specifications with 92A continuous drain current versus 87A, while maintaining identical 30V Vdss rating. The IRLB8748PBF demonstrates improved on-resistance performance at 4.8 mOhm compared to 6.3 mOhm, resulting in reduced power dissipation in switching applications. Both devices share HEXFET® series technology and identical thermal operating range. ROHS3 compliance and REACH Unaffected status are maintained. Active product status ensures long-term availability and supply chain continuity.

PSMN4R3-30PL,127 (Nexperia USA Inc.)

The PSMN4R3-30PL,127 is an Obsolete product status substitute manufactured by Nexperia USA Inc. This device provides the highest continuous drain current rating at 100A, exceeding the IRF3709ZPBF by 13A. On-resistance is optimized at 4.3 mOhm, delivering superior thermal performance with 103W maximum power dissipation. Gate charge specification of 41.5 nC is elevated compared to the main part, requiring consideration in high-frequency switching applications. ROHS3 compliance and REACH Unaffected status are confirmed. Obsolete status aligns with the main part classification.

STP160N3LL (STMicroelectronics)

The STP160N3LL is an Active product status substitute manufactured by STMicroelectronics, featuring STripFET™ H6 series technology. This device provides the highest performance envelope with 120A continuous drain current and 3.2 mOhm on-resistance, enabling maximum thermal headroom with 136W power dissipation capability. Gate charge of 42 nC and input capacitance of 3500 pF represent elevated values requiring circuit evaluation for switching frequency compatibility. Active product status ensures sustained availability. ROHS3 compliance and REACH Unaffected status are maintained.

Frequently Asked Questions (FAQ)

Q: Can the IRLB8748PBF directly replace the IRF3709ZPBF in existing designs?

A: Yes. The IRLB8748PBF maintains identical Vdss (30V), exceeds minimum Id requirement (92A vs. 87A), shares TO-220-3 package configuration, and supports the same operating temperature range (-55°C to 175°C). Both devices are Through Hole mounted with ROHS3 compliance. The improved on-resistance (4.8 mOhm vs. 6.3 mOhm) provides enhanced thermal performance without requiring circuit modification.

Q: What are the key differences between the three substitute options?

A: All three substitutes maintain 30V Vdss and TO-220-3 packaging. Primary differences are: (1) Continuous drain current: IRLB8748PBF at 92A, PSMN4R3-30PL,127 at 100A, STP160N3LL at 120A; (2) On-resistance: IRLB8748PBF at 4.8 mOhm, PSMN4R3-30PL,127 at 4.3 mOhm, STP160N3LL at 3.2 mOhm; (3) Product status: IRLB8748PBF and STP160N3LL are Active, PSMN4R3-30PL,127 is Obsolete; (4) Gate charge: IRLB8748PBF at 23 nC, PSMN4R3-30PL,127 and STP160N3LL at 41.5 nC and 42 nC respectively.

Q: Does gate charge variation affect circuit compatibility?

A: Gate charge differences must be evaluated within the context of the gate drive circuit design. The IRLB8748PBF exhibits lower gate charge (23 nC) compared to the main part (26 nC), requiring minimal adjustment. The PSMN4R3-30PL,127 and STP160N3LL exhibit elevated gate charge (41.5 nC and 42 nC), which may impact switching speed and drive current requirements in high-frequency applications. Circuit simulation or testing is appropriate when gate charge exceeds 30% variance from the original design specification.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All three substitute parts—IRLB8748PBF, PSMN4R3-30PL,127, and STP160N3LL—are ROHS3 Compliant with REACH Unaffected status, matching the regulatory compliance profile of the IRF3709ZPBF.

Q: Which substitute offers the best long-term availability?

A: The IRLB8748PBF and STP160N3LL both carry Active product status, indicating ongoing manufacturing and supply chain support. The PSMN4R3-30PL,127 is classified as Obsolete, similar to the IRF3709ZPBF, and may face future availability constraints.

Q: Can the STP160N3LL be used in applications with current requirements below 87A?

A: Yes. The STP160N3LL is rated for 120A continuous drain current, which exceeds the IRF3709ZPBF requirement of 87A. Devices operate within specification at any current level up to their maximum rating. The superior on-resistance (3.2 mOhm) provides thermal benefits even in lower-current applications.

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