IRF3709ZLPBF N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRF3709ZLPBF is an N-Channel MOSFET manufactured by Infineon Technologies, part of the HEXFET® series. This device is rated for 30V drain-to-source voltage with 87A continuous drain current and 79W power dissipation in a Through Hole TO-262 package. The IRF3709ZLPBF is classified as Obsolete, making identification of equivalent and substitute parts essential for ongoing design support and procurement continuity. Substitute parts must maintain functional compatibility within the specified electrical and mechanical parameters while accommodating the transition from obsolete to active product lines.

Substiute Parts

IRF3709ZLPBF

Infineon TechnologiesIn Stock: 785IRF3709ZLPBF Datasheet

Current PartRFQ

IPI90N04S402AKSA1

Infineon TechnologiesIn Stock: 16855IPI90N04S402AKSA1 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IRF3709ZLPBF is determined by strict adherence to the following electrical and mechanical parameters:

Mandatory Compatibility Criteria:

• FET Type: N-Channel topology required
• Technology: MOSFET (Metal Oxide) construction
• Mounting Type: Through Hole configuration
• Package / Case: TO-262-3 Long Leads, I2PAK, or TO-262AA compatible footprint
• Operating Temperature Range: Minimum -55°C to 175°C (TJ)
• Vgs (Max): ±20V gate voltage rating

Electrical Performance Parameters:

• Drain to Source Voltage (Vdss): Substitute must equal or exceed 30V
• Current - Continuous Drain (Id) @ 25°C: Substitute must equal or exceed 87A (Tc)
• Power Dissipation (Max): Substitute must equal or exceed 79W (Tc)
• Rds On (Max): Lower on-resistance values are acceptable
• Gate Charge (Qg): Provided for reference; lower values indicate improved switching performance

The substitute part IPI90N04S402AKSA1 meets all mandatory criteria and exceeds electrical performance specifications, enabling direct functional replacement in applications previously designed for the IRF3709ZLPBF.

Parameter Comparison

Engineering Selection Recommendations

The IPI90N04S402AKSA1 is the manufacturer-recommended substitute for the obsolete IRF3709ZLPBF. This substitution is supported by the following factors:

Product Status Transition: The IRF3709ZLPBF is classified as Obsolete. The IPI90N04S402AKSA1 is classified as Active, ensuring long-term availability and continued manufacturing support from Infineon Technologies.

Compliance and Certification: Both devices maintain identical REACH Status (REACH Unaffected) and Moisture Sensitivity Level (MSL 1 - Unlimited), ensuring equivalent environmental and handling compliance. The IPI90N04S402AKSA1 carries RoHS3 Compliance certification, meeting current regulatory requirements for new designs and procurement.

Electrical Performance Enhancement: The substitute part exceeds all mandatory electrical parameters: Vdss increases from 30V to 40V, continuous drain current increases from 87A to 90A, and power dissipation capability increases from 79W to 150W. On-resistance is significantly reduced (2.5mOhm versus 6.3mOhm), resulting in lower power losses and improved thermal performance.

Package and Footprint Compatibility: Both devices utilize identical Through Hole mounting in TO-262-3 Long Leads, I2PAK, or TO-262AA packages, enabling direct PCB footprint compatibility without layout modifications.

Frequently Asked Questions (FAQ)

Q: Can the IPI90N04S402AKSA1 be used as a direct replacement for the IRF3709ZLPBF?

A: Yes. The IPI90N04S402AKSA1 meets all mandatory electrical and mechanical compatibility criteria. Both devices are N-Channel MOSFETs in Through Hole TO-262 packages with identical operating temperature ranges (-55°C to 175°C) and gate voltage ratings (±20V). The substitute part exceeds the original specifications in Vdss, continuous drain current, power dissipation, and on-resistance performance.

Q: What are the key differences between these two parts?

A: The primary differences are: (1) Vdss rating increases from 30V to 40V, (2) continuous drain current increases from 87A to 90A, (3) power dissipation capability increases from 79W to 150W, (4) on-resistance decreases from 6.3mOhm to 2.5mOhm, (5) gate charge increases from 26nC to 118nC, and (6) product status changes from Obsolete to Active. The IRF3709ZLPBF belongs to the HEXFET® series, while the IPI90N04S402AKSA1 belongs to the OptiMOS™ series.

Q: Are there any package or footprint considerations?

A: Both devices use identical Through Hole TO-262-3 Long Leads, I2PAK, or TO-262AA packages. No PCB layout modifications are required for substitution. Thermal management characteristics may improve due to the higher power dissipation rating of the substitute part.

Q: What is the inventory status of these parts?

A: The IRF3709ZLPBF has 756 pieces in stock as new original inventory. The IPI90N04S402AKSA1 has 16,800 pieces in stock as new original inventory, providing significantly greater availability for procurement.

Q: Are both parts compliant with current environmental regulations?

A: Yes. Both devices maintain REACH Unaffected status and MSL 1 (Unlimited) moisture sensitivity rating. The IPI90N04S402AKSA1 additionally carries RoHS3 Compliance certification, meeting current regulatory requirements for new product designs and procurement initiatives.

Q: What is the gate charge difference, and does it affect circuit design?

A: Gate charge increases from 26nC to 118nC. This parameter affects gate drive circuit design and switching speed characteristics. Higher gate charge requires proportionally greater gate drive current or longer switching times. Circuit validation is necessary to confirm gate drive circuit adequacy for the substitute part.