IRF3708STRL N-Channel 30V 62A MOSFET Equivalent & Substitute Parts

Part Overview

The IRF3708STRL is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 30V drain-to-source voltage with 62A continuous drain current at 25°C. This device is packaged in D2PAK (TO-263-3) surface mount configuration and is part of the HEXFET® series. The IRF3708STRL is classified as obsolete, making identification of functionally equivalent substitute parts essential for ongoing design support and procurement continuity. Substitute parts must maintain compatibility across voltage rating, current handling capability, package type, and thermal characteristics to ensure direct replacement without circuit redesign.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C	62	A (Tc)
On-State Resistance (Rds On Max) @ 15A, 10V	12	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ 250µA	2	V
Gate Charge (Qg Max) @ 4.5V	24	nC
Power Dissipation (Max)	87	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	D2PAK (TO-263-3)	Surface Mount
Input Capacitance (Ciss Max) @ 15V	2417	pF

Substitute Part Grouping Explanation

Substitution eligibility for the IRF3708STRL is determined by the following mandatory parameters:

Voltage Rating Compatibility: All substitute parts must maintain the 30V Vdss rating to ensure safe operation within the same voltage domain.

Package Compatibility: Substitute parts must use D2PAK (TO-263-3) surface mount packaging to enable direct PCB footprint compatibility without layout modifications.

Current Handling: Substitute parts must support the application's continuous drain current requirements. Parts with equal or greater current ratings (≥62A) provide direct replacement capability. Parts with lower current ratings (32A) are suitable only for applications where the actual operating current does not exceed the substitute part's rating.

Thermal Characteristics: Operating temperature range (-55°C to 175°C) and power dissipation capability must be evaluated against application thermal requirements.

Electrical Parameters: Gate charge, threshold voltage, and on-state resistance values determine switching performance and power loss characteristics. Variations in these parameters affect circuit behavior and must be evaluated for specific application requirements.

Compliance Status: RoHS and REACH compliance status is documented for regulatory and procurement purposes.

Parameter Comparison

Parameter	IRF3708STRL (Main Part)	PSMN017-30BL,118 (Substitute)	PSMN4R3-30BL,118 (Substitute)	Unit
Manufacturer	Infineon Technologies	Nexperia USA Inc.	Nexperia USA Inc.	—
Drain to Source Voltage (Vdss)	30	30	30	V
Continuous Drain Current (Id) @ 25°C	62	32	100	A (Tc)
On-State Resistance (Rds On Max)	12 @ 15A, 10V	17 @ 10A, 10V	4.1 @ 15A, 10V	mOhm
Gate Threshold Voltage (Vgs(th) Max)	2 @ 250µA	2.15 @ 1mA	2.15 @ 1mA	V
Gate Charge (Qg Max)	24 @ 4.5V	10.7 @ 10V	41.5 @ 10V	nC
Power Dissipation (Max)	87	47	103	W (Tc)
Operating Temperature Range	-55 to 175	-55 to 175	-55 to 175	°C (TJ)
Package Type	D2PAK (TO-263-3)	D2PAK (TO-263-3)	D2PAK (TO-263-3)	Surface Mount
Input Capacitance (Ciss Max) @ 15V	2417	552	2400	pF
Product Status	Obsolete	Obsolete	Active	—
RoHS Status	Non-compliant	ROHS3 Compliant	ROHS3 Compliant	—

Engineering Selection Recommendations

PSMN4R3-30BL,118 (Primary Substitute): This part is the preferred substitute for the IRF3708STRL. It maintains the 30V voltage rating and D2PAK package compatibility. With 100A continuous drain current capability, it exceeds the IRF3708STRL's 62A rating, providing margin for application current demands. The PSMN4R3-30BL,118 is classified as Active product status, ensuring long-term availability and supply chain continuity. It is ROHS3 compliant, meeting current regulatory requirements. The lower on-state resistance (4.1 mOhm vs. 12 mOhm) reduces power dissipation in switching applications. Higher gate charge (41.5 nC vs. 24 nC) requires evaluation of gate driver capability but does not preclude substitution.

PSMN017-30BL,118 (Secondary Substitute): This part maintains 30V voltage rating and D2PAK package compatibility. However, the 32A continuous drain current rating is below the IRF3708STRL's 62A specification. This part is suitable only for applications where actual operating current does not exceed 32A. The PSMN017-30BL,118 is classified as Obsolete, offering no advantage over the main part regarding long-term availability. It is ROHS3 compliant. The higher on-state resistance (17 mOhm vs. 12 mOhm) increases power dissipation. Lower gate charge (10.7 nC vs. 24 nC) may reduce gate driver stress.

Compliance Consideration: Both substitute parts are ROHS3 compliant, whereas the IRF3708STRL is RoHS non-compliant. New designs or procurement requiring RoHS compliance must use PSMN4R3-30BL,118 or PSMN017-30BL,118.

Frequently Asked Questions (FAQ)

Q: Can PSMN017-30BL,118 directly replace IRF3708STRL in all applications?

A: No. PSMN017-30BL,118 has a 32A continuous drain current rating, which is below the IRF3708STRL's 62A rating. Direct replacement is possible only in applications where the actual operating current does not exceed 32A. Circuit analysis is required to confirm current requirements before substitution.

Q: What is the primary advantage of PSMN4R3-30BL,118 over IRF3708STRL?

A: PSMN4R3-30BL,118 offers higher current capability (100A vs. 62A), lower on-state resistance (4.1 mOhm vs. 12 mOhm), Active product status for supply continuity, and ROHS3 compliance. These characteristics make it suitable for direct replacement with improved performance margin.

Q: Are all substitute parts available in the same package?

A: Yes. IRF3708STRL, PSMN017-30BL,118, and PSMN4R3-30BL,118 are all packaged in D2PAK (TO-263-3) surface mount configuration, enabling direct PCB footprint compatibility without layout changes.

Q: How do gate charge differences affect circuit performance?

A: Gate charge (Qg) determines the charge required to switch the MOSFET on or off. IRF3708STRL requires 24 nC, PSMN017-30BL,118 requires 10.7 nC, and PSMN4R3-30BL,118 requires 41.5 nC. Higher gate charge increases switching time and gate driver power consumption. Gate driver capability must be verified to ensure adequate drive current for the selected substitute part.

Q: What does "Obsolete" product status mean for substitution?

A: Obsolete status indicates the manufacturer has discontinued production. Both IRF3708STRL and PSMN017-30BL,118 are obsolete, limiting future availability. PSMN4R3-30BL,118 is Active, ensuring continued manufacturing and supply chain support.

Q: Are there thermal considerations when substituting these parts?

A: All three parts operate across -55°C to 175°C temperature range. Power dissipation differs: IRF3708STRL (87W), PSMN017-30BL,118 (47W), and PSMN4R3-30BL,118 (103W). Application thermal design must accommodate the substitute part's power dissipation to maintain junction temperature within operating limits.

Q: Does RoHS compliance affect substitution decisions?

A: RoHS compliance is a regulatory and procurement requirement. IRF3708STRL is RoHS non-compliant, while both substitute parts are ROHS3 compliant. New designs or procurement requiring RoHS compliance must use PSMN4R3-30BL,118 or PSMN017-30BL,118.

Q: What is the significance of input capacitance (Ciss) differences?

A: Input capacitance affects gate charge requirements and switching speed. IRF3708STRL has 2417 pF, PSMN017-30BL,118 has 552 pF, and PSMN4R3-30BL,118 has 2400 pF. Lower capacitance (PSMN017-30BL,118) enables faster switching but may increase EMI. Higher capacitance (PSMN4R3-30BL,118) requires stronger gate drive but reduces switching noise.

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