IRF3708S N-Channel 30V 62A MOSFET Equivalent & Substitute Parts

Part Overview

The IRF3708S is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 30V drain-to-source voltage with 62A continuous drain current at 25°C. This device is housed in a D2PAK (TO-263-3) surface mount package and is designed for high-current switching applications. The IRF3708S is classified as obsolete, making identification of functionally equivalent substitute parts essential for ongoing design support and production continuity. Substitute parts must maintain compatibility across electrical ratings, thermal characteristics, and mechanical packaging to ensure direct replacement capability.

Substiute Parts

IRF3708S

Infineon TechnologiesIn Stock: 29162IRF3708S Datasheet

Current PartRFQ

PSMN017-30BL,118

Nexperia USA Inc.In Stock: 2850PSMN017-30BL,118 Datasheet

MFR RecommendedRFQ

PSMN4R3-30BL,118

Nexperia USA Inc.In Stock: 10797PSMN4R3-30BL,118 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the IRF3708S is determined by the following critical parameters:

Mandatory Compatibility Criteria:

• Drain-to-Source Voltage (Vdss): Must equal or exceed 30V
• Package Type: Must be D2PAK (TO-263-3) surface mount
• Operating Temperature Range: Must support -55°C to 175°C
• Mounting Type: Surface mount configuration

Performance Consideration Parameters:

• Continuous Drain Current (Id): Substitute must support minimum 62A at 25°C or provide equivalent thermal performance
• On-State Resistance (Rds On): Lower values indicate improved efficiency; higher values acceptable if thermal dissipation remains within application limits
• Gate Charge (Qg): Affects switching speed and driver requirements
• Power Dissipation: Must support thermal load of application

The two substitute parts listed below meet the mandatory compatibility criteria and are classified as direct electrical and mechanical equivalents within the allowed parameter ranges.

Parameter Comparison

Engineering Selection Recommendations

PSMN4R3-30BL,118 (Nexperia USA Inc.) is the primary substitute for the IRF3708S. This device maintains identical 30V Vdss rating and D2PAK packaging. The PSMN4R3-30BL,118 provides 100A continuous drain current, exceeding the IRF3708S specification of 62A, with superior on-state resistance of 4.1mOhm compared to 12mOhm. Power dissipation capability is 103W, supporting higher thermal loads. The device is classified as Active product status, ensuring long-term availability and supply chain continuity. ROHS3 compliance provides regulatory advantage over the non-compliant IRF3708S. Gate charge of 41.5nC is higher than the original part, requiring verification of gate driver capability in the target application.

PSMN017-30BL,118 (Nexperia USA Inc.) serves as an alternative substitute when lower gate charge and reduced power dissipation are required. This device maintains 30V Vdss and D2PAK packaging but provides only 32A continuous drain current, which is below the IRF3708S rating of 62A. On-state resistance is 17mOhm, higher than the original specification. Power dissipation is limited to 47W. This substitute is suitable only for applications where the 62A current requirement can be reduced or where thermal constraints permit lower power handling. The device is classified as Obsolete, similar to the IRF3708S. ROHS3 compliance is provided.

For new designs and production continuity, PSMN4R3-30BL,118 is the recommended substitute due to active product status and superior electrical performance characteristics.

Frequently Asked Questions (FAQ)

Q: Can PSMN017-30BL,118 directly replace IRF3708S in all applications?

A: No. PSMN017-30BL,118 provides only 32A continuous drain current versus the IRF3708S specification of 62A. This substitute is suitable only for applications where current requirements do not exceed 32A at 25°C. Verify application current demands before selection.

Q: What is the primary advantage of PSMN4R3-30BL,118 over IRF3708S?

A: PSMN4R3-30BL,118 offers three key advantages: (1) Active product status ensuring long-term availability, (2) ROHS3 compliance versus non-compliant IRF3708S, and (3) superior on-state resistance of 4.1mOhm reducing conduction losses. The 100A rating exceeds IRF3708S capability.

Q: Are there package compatibility concerns with these substitutes?

A: No. All three devices use identical D2PAK (TO-263-3) surface mount packaging with the same pinout and thermal tab configuration. PCB layout modifications are not required.

Q: How does gate charge affect substitute selection?

A: IRF3708S has 24nC gate charge at 4.5V. PSMN4R3-30BL,118 has 41.5nC at 10V, requiring higher gate driver current. PSMN017-30BL,118 has 10.7nC at 10V, requiring lower gate driver current. Verify gate driver specifications support the selected substitute's gate charge requirement.

Q: What is the impact of different Rds On values?

A: Lower Rds On reduces conduction losses and heat generation. PSMN4R3-30BL,118 at 4.1mOhm is superior to IRF3708S at 12mOhm. PSMN017-30BL,118 at 17mOhm generates higher losses. Select based on thermal budget and efficiency requirements.

Q: Why is PSMN017-30BL,118 classified as Obsolete?

A: Product status reflects manufacturer lifecycle decisions. Obsolete status indicates the device is no longer in active production. PSMN4R3-30BL,118 maintains Active status, providing superior supply chain security.

Q: Can input capacitance differences affect circuit performance?

A: Yes. IRF3708S and PSMN4R3-30BL,118 have similar input capacitance at approximately 2400pF, ensuring compatible switching behavior. PSMN017-30BL,118 has significantly lower capacitance at 552pF, which may affect gate drive timing and switching characteristics in sensitive applications.