IRF3707ZCS N-Channel 30V 59A MOSFET Equivalent & Substitute Parts

Part Overview

The IRF3707ZCS is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 30V drain-to-source voltage with 59A continuous drain current at 25°C. This device is packaged in D2PAK (TO-263-3) surface mount configuration and is classified as obsolete. Due to its obsolete status, equivalent and substitute parts are necessary for ongoing design support, production continuity, and system maintenance. Substitute parts must maintain compatibility across electrical ratings, thermal characteristics, and mechanical packaging to ensure direct replacement capability.

Substiute Parts

IRF3707ZCS

Infineon TechnologiesIn Stock: 18883IRF3707ZCS Datasheet

Current PartRFQ

IPB22N03S4L15ATMA1

Infineon TechnologiesIn Stock: 15794IPB22N03S4L15ATMA1 Datasheet

MFR RecommendedRFQ

PSMN017-30BL,118

Nexperia USA Inc.In Stock: 2850PSMN017-30BL,118 Datasheet

MFR RecommendedRFQ

PSMN4R3-30BL,118

Nexperia USA Inc.In Stock: 10797PSMN4R3-30BL,118 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the IRF3707ZCS is determined by the following critical parameters:

Mandatory Compatibility Criteria:

• Drain-to-Source Voltage (Vdss): Must equal or exceed 30V
• Package Type: Must be D2PAK (TO-263-3) surface mount configuration
• Operating Temperature Range: Must support -55°C to 175°C
• Mounting Type: Surface mount only

Performance Matching Criteria:

• Continuous Drain Current (Id): Substitute must support the application's current requirements
• On-State Resistance (Rds On): Lower values indicate improved performance; higher values may limit application suitability
• Power Dissipation: Must accommodate thermal requirements of the target application
• Gate Charge and Input Capacitance: Affect switching speed and drive circuit requirements

The substitute parts listed below meet the mandatory packaging and voltage criteria. Differences in current rating, on-state resistance, and power dissipation reflect design trade-offs and determine application-specific suitability.

Parameter Comparison

Engineering Selection Recommendations

PSMN4R3-30BL,118 (Nexperia USA Inc.)

This part is the primary substitute for new designs and production continuity. It maintains 30V Vdss rating and D2PAK packaging identical to the IRF3707ZCS. The PSMN4R3-30BL,118 offers 100A continuous drain current, exceeding the original 59A specification, with superior on-state resistance of 4.1 mOhm. Product status is Active, ensuring long-term availability. RoHS3 compliance supports modern manufacturing and environmental standards. Higher power dissipation (103W) accommodates demanding thermal environments. Gate charge of 41.5 nC requires appropriate drive circuit consideration.

PSMN017-30BL,118 (Nexperia USA Inc.)

This part provides an intermediate current rating of 32A, suitable for applications requiring lower current than the original 59A specification. It maintains 30V Vdss and D2PAK packaging. On-state resistance of 17 mOhm is higher than the main part, resulting in increased conduction losses. Product status is Obsolete; however, current inventory of 2767 pieces supports near-term requirements. RoHS3 compliance is provided. Gate charge of 10.7 nC is lower than the main part, reducing drive circuit demands.

IPB22N03S4L15ATMA1 (Infineon Technologies)

This part is suitable only for applications with reduced current requirements below 22A. It maintains 30V Vdss and compatible TO-263-3 packaging. On-state resistance of 14.6 mOhm is higher than the original specification. Product status is Obsolete. RoHS3 compliance is provided. Power dissipation of 31W is significantly lower, limiting use to low-power applications. Gate charge of 14 nC is comparable to the main part.

Selection Basis:

• Voltage Compatibility: All substitute parts maintain 30V Vdss rating, ensuring direct electrical compatibility.
• Package Compatibility: All parts use D2PAK (TO-263-3) surface mount configuration, enabling mechanical interchangeability.
• Compliance Status: PSMN4R3-30BL,118 and PSMN017-30BL,118 are RoHS3 compliant; IPB22N03S4L15ATMA1 is RoHS3 compliant. The main part is RoHS non-compliant.
• Product Availability: PSMN4R3-30BL,118 is Active status with 10750 pieces in stock, providing long-term supply assurance.
• Thermal and Current Ratings: Selection depends on application current and thermal dissipation requirements.

Frequently Asked Questions (FAQ)

Q: Can PSMN4R3-30BL,118 directly replace IRF3707ZCS in all applications?

A: PSMN4R3-30BL,118 maintains identical voltage rating (30V) and package type (D2PAK). However, the higher continuous drain current (100A vs. 59A) and different on-state resistance (4.1 mOhm vs. 9.5 mOhm) may affect circuit performance. Gate charge is significantly higher (41.5 nC vs. 15 nC), requiring verification of drive circuit capability. Applications with current requirements below 59A are compatible; applications requiring the exact electrical characteristics of the original part require detailed circuit analysis.

Q: What is the difference between D2PAK and PG-TO263-3-2 packaging?

A: Both designations refer to the same physical package type: TO-263-3 with 2 leads plus tab. D2PAK is the common industry designation. PG-TO263-3-2 is the supplier-specific package designation used by Infineon. These packages are mechanically and electrically interchangeable.

Q: Why does PSMN4R3-30BL,118 have higher gate charge than IRF3707ZCS?

A: Gate charge (Qg) is proportional to the die size and current-handling capability. PSMN4R3-30BL,118 is rated for 100A continuous current compared to 59A for IRF3707ZCS. The larger die required for higher current handling results in increased gate charge. This requires higher gate drive current or longer switching times in the application circuit.

Q: Is IPB22N03S4L15ATMA1 suitable for high-current applications?

A: No. IPB22N03S4L15ATMA1 is rated for 22A continuous drain current, significantly below the original 59A specification. This part is suitable only for applications with current requirements of 22A or less. Use of this part in higher-current applications will result in device failure due to thermal runaway.

Q: What is the impact of different on-state resistance values on circuit performance?

A: On-state resistance (Rds On) directly affects conduction losses. Lower Rds On values reduce power dissipation and heat generation. PSMN4R3-30BL,118 (4.1 mOhm) dissipates less power than IRF3707ZCS (9.5 mOhm), improving efficiency. PSMN017-30BL,118 (17 mOhm) and IPB22N03S4L15ATMA1 (14.6 mOhm) dissipate more power, requiring enhanced thermal management or limiting application to lower-power circuits.

Q: Are all substitute parts RoHS compliant?

A: PSMN4R3-30BL,118, PSMN017-30BL,118, and IPB22N03S4L15ATMA1 are all RoHS3 compliant. The original IRF3707ZCS is RoHS non-compliant. For applications requiring RoHS compliance, substitute parts must be used.

Q: What is the inventory status of each substitute part?

A: PSMN4R3-30BL,118 has 10750 pieces in stock (Active status). PSMN017-30BL,118 has 2767 pieces in stock (Obsolete status). IPB22N03S4L15ATMA1 has 15742 pieces in stock (Obsolete status). PSMN4R3-30BL,118 provides the longest supply assurance due to Active product status.

Q: Can input capacitance differences affect circuit design?

A: Yes. Input capacitance (Ciss) affects gate drive circuit design and switching speed. PSMN4R3-30BL,118 has significantly higher Ciss (2400 pF vs. 1210 pF), requiring higher gate drive current for equivalent switching speed. PSMN017-30BL,118 has lower Ciss (552 pF), reducing gate drive requirements. Drive circuit redesign may be necessary when substituting parts with substantially different Ciss values.