IRF3707STRLPBF N-Channel 30V 62A MOSFET Equivalent & Substitute Parts

Part Overview

The IRF3707STRLPBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 30V drain-to-source voltage and 62A continuous drain current at 25°C. This device features the HEXFET® series technology in a D2PAK surface mount package and is classified as obsolete. Due to its obsolete status, equivalent and substitute parts are necessary to maintain design continuity and ensure component availability for new production runs and field replacements.

Key Parameters

Parameter	Value	Unit
Manufacturer Part Number	IRF3707STRLPBF	-
Manufacturer	Infineon Technologies	-
FET Type	N-Channel	-
Drain to Source Voltage (Vdss)	30	V
Current - Continuous Drain (Id) @ 25°C	62	A (Tc)
Rds On (Max) @ Id, Vgs	12.5 mOhm @ 15A, 10V	-
Power Dissipation (Max)	87	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package / Case	TO-263-3, D2PAK	-
Mounting Type	Surface Mount	-
Product Status	Obsolete	-

Substitute Part Grouping Explanation

Substitution of the IRF3707STRLPBF is determined by strict adherence to the following electrical and mechanical parameters:

Critical Matching Parameters:

Drain to Source Voltage (Vdss): Must equal 30V
FET Type: Must be N-Channel
Technology: Must be MOSFET (Metal Oxide)
Package / Case: Must be TO-263-3 or D2PAK (2 Leads + Tab)
Mounting Type: Must be Surface Mount
Operating Temperature Range: Must support -55°C to 175°C (TJ)

Functional Compatibility Parameters:

Current - Continuous Drain (Id) @ 25°C: Substitute must meet or exceed 62A
Rds On (Max): Lower or equal values are acceptable
Power Dissipation (Max): Must support thermal requirements of the application
Gate Charge (Qg): Lower values preferred for switching performance
Input Capacitance (Ciss): Lower values preferred for gate drive efficiency

All substitute parts listed below satisfy the critical matching parameters and provide electrical characteristics suitable for direct replacement in applications designed for the IRF3707STRLPBF.

Parameter Comparison

Parameter	IRF3707STRLPBF	IPB22N03S4L15ATMA1	PSMN017-30BL,118	PSMN4R3-30BL,118	STB70NF03LT4
Manufacturer	Infineon	Infineon	Nexperia USA Inc.	Nexperia USA Inc.	STMicroelectronics
Vdss (V)	30	30	30	30	30
Id @ 25°C (A)	62	22	32	100	70
Rds On (Max) @ 10V (mOhm)	12.5 @ 15A	14.6 @ 22A	17 @ 10A	4.1 @ 15A	9.5 @ 35A
Power Dissipation (Max) (W)	87	31	47	103	100
Gate Charge (Qg) (nC)	19 @ 4.5V	14 @ 10V	10.7 @ 10V	41.5 @ 10V	30 @ 5V
Input Capacitance (Ciss) (pF)	1990 @ 15V	980 @ 25V	552 @ 15V	2400 @ 15V	1440 @ 25V
Operating Temperature (°C)	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175
Package	D2PAK	PG-TO263-3-2	D2PAK	D2PAK	D2PAK
Product Status	Obsolete	Obsolete	Obsolete	Active	Active
RoHS Status	-	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Primary Substitutes (Active Product Status):

PSMN4R3-30BL,118 and STB70NF03LT4 are recommended as primary substitutes due to active product status, ensuring long-term availability and supply chain continuity. Both devices exceed the 62A continuous drain current requirement of the IRF3707STRLPBF and provide superior on-resistance characteristics. PSMN4R3-30BL,118 delivers 100A capability with 4.1 mOhm on-resistance, while STB70NF03LT4 provides 70A capability with 9.5 mOhm on-resistance. Both maintain full compatibility with the D2PAK package and -55°C to 175°C operating temperature range. Both parts are ROHS3 compliant and REACH unaffected.

Secondary Substitutes (Obsolete Product Status):

IPB22N03S4L15ATMA1 and PSMN017-30BL,118 are available as secondary options but carry obsolete product status. IPB22N03S4L15ATMA1 provides 22A continuous drain current, which falls below the original 62A specification and is suitable only for applications with reduced current requirements. PSMN017-30BL,118 provides 32A continuous drain current, also below the original specification. Both are ROHS3 compliant and suitable for legacy system maintenance where component availability is limited.

Compliance Considerations:

All substitute parts maintain REACH unaffected status and EAR99 ECCN classification consistent with the original IRF3707STRLPBF. Moisture sensitivity level remains at MSL 1 (Unlimited) across all substitutes, ensuring equivalent handling and storage requirements.

Frequently Asked Questions (FAQ)

Q: Can IPB22N03S4L15ATMA1 directly replace IRF3707STRLPBF in all applications?

A: No. IPB22N03S4L15ATMA1 is rated for 22A continuous drain current, which is 35% below the IRF3707STRLPBF specification of 62A. This substitute is suitable only for applications where the actual operating current does not exceed 22A. Thermal design and circuit current limits must be verified before substitution.

Q: What is the primary advantage of PSMN4R3-30BL,118 over the original IRF3707STRLPBF?

A: PSMN4R3-30BL,118 provides 100A continuous drain current capability compared to 62A in the original part, with significantly lower on-resistance of 4.1 mOhm versus 12.5 mOhm. This results in reduced power dissipation and improved thermal performance. Additionally, PSMN4R3-30BL,118 maintains active product status, ensuring continued availability.

Q: Are all substitute parts compatible with the D2PAK package footprint?

A: Yes. All listed substitutes use D2PAK or equivalent TO-263-3 packaging with identical lead configuration (2 Leads + Tab). PCB footprints designed for IRF3707STRLPBF are directly compatible with all substitute parts without layout modifications.

Q: What is the difference between PSMN017-30BL,118 and PSMN4R3-30BL,118?

A: Both parts are manufactured by Nexperia USA Inc. and rated for 30V Vdss. PSMN017-30BL,118 provides 32A continuous drain current with 17 mOhm on-resistance, while PSMN4R3-30BL,118 provides 100A continuous drain current with 4.1 mOhm on-resistance. PSMN4R3-30BL,118 is the higher-performance option with active product status.

Q: Can STB70NF03LT4 be used in applications originally designed for IRF3707STRLPBF?

A: Yes. STB70NF03LT4 is rated for 70A continuous drain current, exceeding the 62A requirement, with 9.5 mOhm on-resistance compared to 12.5 mOhm in the original part. Operating temperature range, package type, and voltage rating are identical. STB70NF03LT4 maintains active product status and ROHS3 compliance.

Q: What are the thermal implications of substituting with a higher-current-rated device?

A: Devices with higher current ratings typically exhibit lower on-resistance, resulting in reduced power dissipation at equivalent operating currents. For example, PSMN4R3-30BL,118 dissipates 103W maximum compared to 87W in IRF3707STRLPBF. Thermal design must account for the specific operating current and duty cycle of the application. Lower on-resistance generally improves thermal performance at the same current levels.

Q: Are gate drive requirements identical across all substitute parts?

A: No. Gate charge (Qg) and input capacitance (Ciss) vary among substitutes. IRF3707STRLPBF requires 19 nC gate charge at 4.5V, while PSMN017-30BL,118 requires only 10.7 nC at 10V. STB70NF03LT4 requires 30 nC at 5V. Gate drive circuits must be verified to ensure adequate drive capability for the selected substitute, particularly in high-frequency switching applications.

Q: Which substitute offers the best balance of performance and availability?

A: PSMN4R3-30BL,118 and STB70NF03LT4 both offer active product status with superior electrical characteristics. PSMN4R3-30BL,118 provides the lowest on-resistance (4.1 mOhm) and highest current capability (100A), while STB70NF03LT4 provides a balanced approach with 70A capability and 9.5 mOhm on-resistance. Selection depends on specific application requirements for current handling and thermal performance.

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