IRF3707S N-Channel 30V 62A MOSFET Equivalent & Substitute Parts

Part Overview

The IRF3707S is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 30V drain-to-source voltage with 62A continuous drain current at 25°C. This device is housed in a D2PAK (TO-263-3) surface mount package and is part of the HEXFET® series. The IRF3707S is classified as obsolete, making identification of functionally equivalent substitute parts essential for ongoing design support and production continuity. Substitute parts must maintain compatibility with the 30V voltage class, D2PAK package format, and surface mount assembly requirements while meeting or exceeding the electrical performance specifications of the original device.

Key Parameters

Parameter	IRF3707S	Unit
Drain-to-Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C	62	A (Tc)
On-Resistance (Rds On Max) @ Id, Vgs	12.5 mOhm @ 15A, 10V	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ Id	3 @ 250µA	V
Gate Charge (Qg Max) @ Vgs	19 @ 4.5V	nC
Input Capacitance (Ciss Max) @ Vds	1990 @ 15V	pF
Power Dissipation (Max)	87	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	D2PAK (TO-263-3)	Surface Mount
Product Status	Obsolete	—

Substitute Part Grouping Explanation

Substitution of the IRF3707S is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal 30V
Package Type: Must be D2PAK (TO-263-3) surface mount
Mounting Type: Surface mount only
Operating Temperature Range: Must support -55°C to 175°C (TJ)
FET Type: N-Channel MOSFET technology

Secondary Compatibility Parameters:

Gate Drive Voltage: Compatible with 4.5V and 10V drive levels
Gate Threshold Voltage (Vgs(th)): Must be within ±20V maximum gate voltage specification
Continuous Drain Current (Id): Substitute parts may exceed the 62A specification; lower current ratings are not acceptable
On-Resistance (Rds On): Lower values indicate improved performance; higher values require thermal analysis
Power Dissipation: Substitute parts with higher ratings provide thermal margin

The IRF3707S has two manufacturer-recommended substitutes from Nexperia USA Inc. and one from STMicroelectronics. All three substitute parts maintain the 30V Vdss rating and D2PAK package format. The substitutes differ in continuous drain current capability and on-resistance characteristics, allowing selection based on application thermal and current requirements.

Parameter Comparison

Parameter	IRF3707S (Infineon)	PSMN017-30BL,118 (Nexperia)	PSMN4R3-30BL,118 (Nexperia)	STB70NF03LT4 (STMicroelectronics)	Unit
Manufacturer	Infineon Technologies	Nexperia USA Inc.	Nexperia USA Inc.	STMicroelectronics	—
Drain-to-Source Voltage (Vdss)	30	30	30	30	V
Continuous Drain Current (Id) @ 25°C	62	32	100	70	A (Tc)
On-Resistance (Rds On Max)	12.5 @ 15A, 10V	17 @ 10A, 10V	4.1 @ 15A, 10V	9.5 @ 35A, 10V	mOhm
Gate Threshold Voltage (Vgs(th) Max)	3 @ 250µA	2.15 @ 1mA	2.15 @ 1mA	1 @ 250µA	V
Gate Charge (Qg Max)	19 @ 4.5V	10.7 @ 10V	41.5 @ 10V	30 @ 5V	nC
Input Capacitance (Ciss Max)	1990 @ 15V	552 @ 15V	2400 @ 15V	1440 @ 25V	pF
Power Dissipation (Max)	87	47	103	100	W (Tc)
Operating Temperature Range	-55 to 175	-55 to 175	-55 to 175	-55 to 175	°C (TJ)
Package Type	D2PAK (TO-263-3)	D2PAK (TO-263-3)	D2PAK (TO-263-3)	D2PAK (TO-263-3)	Surface Mount
Product Status	Obsolete	Obsolete	Active	Active	—
RoHS Status	Non-compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	—

Engineering Selection Recommendations

PSMN017-30BL,118 (Nexperia USA Inc.): This substitute is suitable for applications where the continuous drain current requirement does not exceed 32A. The PSMN017-30BL,118 exhibits lower gate charge (10.7 nC) and input capacitance (552 pF) compared to the IRF3707S, resulting in faster switching characteristics and reduced gate drive power. However, this part is classified as obsolete, limiting long-term availability. The device is ROHS3 compliant, providing environmental compliance advantages over the non-compliant IRF3707S.

PSMN4R3-30BL,118 (Nexperia USA Inc.): This substitute provides the highest continuous drain current rating (100A) and lowest on-resistance (4.1 mOhm @ 15A, 10V) among the three alternatives. The PSMN4R3-30BL,118 is classified as active product status, ensuring ongoing availability and supply chain stability. This part is ROHS3 compliant. The higher gate charge (41.5 nC) and input capacitance (2400 pF) require consideration in gate drive circuit design. This substitute is recommended for applications requiring maximum current handling capability and long-term product support.

STB70NF03LT4 (STMicroelectronics): This substitute offers a continuous drain current rating of 70A with on-resistance of 9.5 mOhm @ 35A, 10V, positioning it between the PSMN017 and PSMN4R3 options. The STB70NF03LT4 is part of the STripFET™ II series and is classified as active product status. This device is ROHS3 compliant. The gate threshold voltage is lower (1V @ 250µA) compared to the IRF3707S, which may affect gate drive circuit compatibility. This substitute is suitable for applications requiring moderate-to-high current capability with established supply chain support.

Compliance and Availability Considerations: The IRF3707S is non-compliant with RoHS3 regulations. All three substitute parts are ROHS3 compliant, supporting modern procurement and environmental compliance requirements. The PSMN4R3-30BL,118 and STB70NF03LT4 are active products with higher inventory availability (10,750 and 25,100 units respectively), providing superior long-term supply assurance compared to the obsolete IRF3707S.

Frequently Asked Questions (FAQ)

Q: Can the PSMN017-30BL,118 be used as a direct replacement for the IRF3707S?

A: The PSMN017-30BL,118 maintains the 30V Vdss rating and D2PAK package compatibility. However, the continuous drain current rating is 32A compared to the IRF3707S specification of 62A. This substitute is suitable only for applications where the actual operating current does not exceed 32A. The lower gate charge and input capacitance provide faster switching performance. Both devices are obsolete, limiting future availability.

Q: What are the advantages of the PSMN4R3-30BL,118 over the IRF3707S?

A: The PSMN4R3-30BL,118 provides 100A continuous drain current (versus 62A), significantly lower on-resistance (4.1 mOhm versus 12.5 mOhm), and higher power dissipation capability (103W versus 87W). The device is active product status, ensuring ongoing supply availability. ROHS3 compliance provides environmental and regulatory advantages. The trade-off is higher gate charge (41.5 nC versus 19 nC) and input capacitance (2400 pF versus 1990 pF), requiring gate drive circuit evaluation.

Q: Is the STB70NF03LT4 compatible with the IRF3707S gate drive circuit?

A: The STB70NF03LT4 has a lower gate threshold voltage (1V @ 250µA) compared to the IRF3707S (3V @ 250µA). This difference may affect gate drive circuit timing and switching characteristics. The maximum gate voltage specification is ±18V for the STB70NF03LT4 versus ±20V for the IRF3707S. Gate drive circuit compatibility must be verified through application-specific analysis. The D2PAK package and surface mount format are identical.

Q: Can all three substitute parts be used interchangeably in the same PCB layout?

A: All three substitute parts use the D2PAK (TO-263-3) package with identical pin configuration and footprint. PCB layout compatibility is maintained. However, electrical performance differences require circuit-level evaluation. The on-resistance, gate charge, and input capacitance variations affect thermal performance, switching speed, and gate drive power consumption. Application-specific thermal and electrical analysis is necessary before selecting a substitute.

Q: Why is the PSMN017-30BL,118 not recommended despite being a Nexperia product?

A: The PSMN017-30BL,118 is classified as obsolete product status, creating long-term supply chain risk. The 32A continuous drain current rating is significantly lower than the IRF3707S specification of 62A, limiting its applicability to lower-current designs. For new designs or production continuity, the active-status PSMN4R3-30BL,118 or STB70NF03LT4 are preferred alternatives.

Q: What is the impact of higher gate charge on circuit design?

A: Gate charge determines the energy required to switch the MOSFET on and off. The PSMN4R3-30BL,118 has 41.5 nC gate charge versus 19 nC for the IRF3707S. Higher gate charge increases gate drive power consumption and may extend switching transition times if the gate drive circuit has limited current capability. Gate drive circuit current sourcing and sinking capacity must be verified to ensure adequate switching performance.

Q: Are all substitute parts RoHS compliant?

A: Yes. The PSMN017-30BL,118, PSMN4R3-30BL,118, and STB70NF03LT4 are all ROHS3 compliant. The original IRF3707S is non-compliant with RoHS3 regulations. Compliance with modern environmental and procurement standards is a significant advantage of all three substitute parts.

Q: Which substitute part provides the best thermal performance?

A: The PSMN4R3-30BL,118 offers the lowest on-resistance (4.1 mOhm @ 15A, 10V) and highest power dissipation rating (103W), providing superior thermal performance. Lower on-resistance reduces conduction losses, and higher power dissipation rating provides thermal margin. The STB70NF03LT4 provides intermediate thermal performance (9.5 mOhm, 100W) with active product status support.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message