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IRF3707 N-Channel MOSFET 30V 62A TO-220AB Equivalent & Substitute Parts
Part Overview
The IRF3707 is an N-Channel MOSFET manufactured by Infineon Technologies in the HEXFET® series, rated for 30V drain-to-source voltage and 62A continuous drain current in a Through Hole TO-220AB package. This device is classified as obsolete, making identification of equivalent and substitute parts necessary for ongoing design support, production continuity, and component sourcing.
The IRF3707 operates across a temperature range of -55°C to 175°C (TJ) with a maximum power dissipation of 87W at case temperature. The part is RoHS non-compliant and carries an MSL rating of 1 (Unlimited).
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Drain to Source Voltage (Vdss) | 30 | V |
| Current - Continuous Drain (Id) @ 25°C | 62 | A (Tc) |
| Rds On (Max) @ Id, Vgs | 12.5 mOhm @ 15A, 10V | mOhm |
| Gate Charge (Qg) (Max) @ Vgs | 19 | nC @ 4.5V |
| Vgs(th) (Max) @ Id | 3 | V @ 250µA |
| Vgs (Max) | ±20 | V |
| Input Capacitance (Ciss) (Max) @ Vds | 1990 | pF @ 15V |
| Power Dissipation (Max) | 87 | W (Tc) |
| Operating Temperature | -55 to 175 | °C (TJ) |
| Mounting Type | Through Hole | - |
| Package / Case | TO-220-3 | - |
| Product Status | Obsolete | - |
Substitute Part Grouping Explanation
Substitution of the IRF3707 is determined by strict adherence to the following electrical and mechanical parameters:
Primary Substitution Criteria:
- Drain to Source Voltage (Vdss): 30V (exact match required)
- Mounting Type: Through Hole (exact match required)
- Package / Case: TO-220-3 (exact match required)
- FET Type: N-Channel (exact match required)
- Technology: MOSFET (Metal Oxide) (exact match required)
Secondary Compatibility Parameters:
- Current - Continuous Drain (Id) @ 25°C: Equal to or greater than 62A
- Rds On (Max) @ Id, Vgs: Equal to or lower than 12.5 mOhm @ 15A, 10V
- Gate Charge (Qg) (Max) @ Vgs: Equal to or lower than 19 nC @ 4.5V
- Vgs(th) (Max) @ Id: Equal to or lower than 3V @ 250µA
- Vgs (Max): ±20V or greater
- Input Capacitance (Ciss) (Max) @ Vds: Equal to or lower than 1990 pF @ 15V
- Operating Temperature: -55°C to 175°C (TJ) or wider range
Substitute parts must satisfy all primary criteria and maintain compatibility within secondary parameters to ensure functional equivalence in circuit applications.
Parameter Comparison
| Parameter | IRF3707 | IRLB8721PBF | PSMN022-30PL,127 | PSMN2R0-30PL,127 | PSMN4R3-30PL,127 |
|---|---|---|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies | Nexperia USA Inc. | Nexperia USA Inc. | Nexperia USA Inc. |
| Drain to Source Voltage (Vdss) | 30 V | 30 V | 30 V | 30 V | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 62 A (Tc) | 62 A (Tc) | 30 A (Tc) | 100 A (Tc) | 100 A (Tc) |
| Rds On (Max) @ Id, Vgs | 12.5 mOhm @ 15A, 10V | 8.7 mOhm @ 31A, 10V | 22 mOhm @ 5A, 10V | 2.1 mOhm @ 15A, 10V | 4.3 mOhm @ 15A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 4.5V | 13 nC @ 4.5V | 9 nC @ 10V | 117 nC @ 10V | 41.5 nC @ 10V |
| Vgs(th) (Max) @ Id | 3 V @ 250µA | 2.35 V @ 25µA | 2.15 V @ 1mA | 2.15 V @ 1mA | 2.15 V @ 1mA |
| Vgs (Max) | ±20 V | ±20 V | ±20 V | ±20 V | ±20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1990 pF @ 15V | 1077 pF @ 15V | 447 pF @ 15V | 6810 pF @ 12V | 2400 pF @ 12V |
| Power Dissipation (Max) | 87 W (Tc) | 65 W (Tc) | 41 W (Tc) | 211 W (Tc) | 103 W (Tc) |
| Operating Temperature | -55 to 175 °C (TJ) | -55 to 175 °C (TJ) | -55 to 175 °C (TJ) | -55 to 175 °C (TJ) | -55 to 175 °C (TJ) |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
| Product Status | Obsolete | Active | Obsolete | Obsolete | Obsolete |
| RoHS Status | RoHS non-compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant |
Engineering Selection Recommendations
IRLB8721PBF (Infineon Technologies)
The IRLB8721PBF is the manufacturer-recommended substitute for the IRF3707. This part maintains identical voltage and current ratings (30V, 62A) with improved electrical characteristics: lower on-resistance (8.7 mOhm vs. 12.5 mOhm), reduced gate charge (13 nC vs. 19 nC), and lower input capacitance (1077 pF vs. 1990 pF). The IRLB8721PBF carries Active product status and ROHS3 compliance, providing superior availability and regulatory alignment compared to the obsolete IRF3707. This part is the primary selection for direct replacement applications.
PSMN4R3-30PL,127 (Nexperia USA Inc.)
The PSMN4R3-30PL,127 provides higher current capability (100A vs. 62A) while maintaining the 30V voltage rating and TO-220-3 package. This part exhibits superior on-resistance (4.3 mOhm vs. 12.5 mOhm) and moderate gate charge (41.5 nC vs. 19 nC). Selection of this part is appropriate for applications requiring increased current headroom or thermal margin. ROHS3 compliance is provided.
PSMN2R0-30PL,127 (Nexperia USA Inc.)
The PSMN2R0-30PL,127 offers the highest current rating (100A) and lowest on-resistance (2.1 mOhm) among available substitutes. This part is suitable for applications prioritizing minimal conduction losses and maximum thermal performance. Gate charge is significantly elevated (117 nC vs. 19 nC), requiring consideration in high-frequency switching applications. ROHS3 compliance is provided.
PSMN022-30PL,127 (Nexperia USA Inc.)
The PSMN022-30PL,127 is not recommended as a direct substitute due to reduced current rating (30A vs. 62A). This part may be considered only in applications where the required continuous drain current does not exceed 30A and thermal constraints permit the lower power dissipation rating (41W vs. 87W).
Frequently Asked Questions (FAQ)
Q: Can the IRLB8721PBF be used as a direct replacement for the IRF3707?
A: Yes. The IRLB8721PBF maintains identical voltage (30V) and current (62A) ratings, operates in the same temperature range (-55°C to 175°C), and uses the same TO-220-3 package. The IRLB8721PBF exhibits improved electrical performance with lower on-resistance and gate charge. This part is the manufacturer-recommended substitute.
Q: What is the primary difference between the IRLB8721PBF and PSMN4R3-30PL,127?
A: Both parts are rated for 30V operation and TO-220-3 packaging. The IRLB8721PBF matches the IRF3707 current rating (62A), while the PSMN4R3-30PL,127 provides higher current capability (100A). The PSMN4R3-30PL,127 exhibits lower on-resistance (4.3 mOhm vs. 8.7 mOhm) but higher gate charge (41.5 nC vs. 13 nC). Selection depends on application current requirements and switching frequency constraints.
Q: Why is the PSMN022-30PL,127 not suitable as a substitute?
A: The PSMN022-30PL,127 is rated for only 30A continuous drain current, which is below the IRF3707 specification of 62A. Use of this part in applications requiring 62A operation would result in thermal stress and potential device failure. This part is suitable only for applications with reduced current requirements.
Q: Are all substitute parts RoHS compliant?
A: The IRLB8721PBF, PSMN4R3-30PL,127, PSMN2R0-30PL,127, and PSMN022-30PL,127 are all ROHS3 compliant. The original IRF3707 is RoHS non-compliant. Selection of any substitute part provides regulatory compliance improvement.
Q: What is the impact of gate charge differences on circuit design?
A: Gate charge (Qg) affects the speed and energy required to switch the MOSFET. The IRLB8721PBF (13 nC) requires less gate charge than the IRF3707 (19 nC), enabling faster switching and reduced driver power dissipation. The PSMN2R0-30PL,127 (117 nC) requires significantly more gate charge, necessitating verification of gate driver capability in high-frequency applications.
Q: Can the PSMN2R0-30PL,127 be used in place of the IRF3707?
A: The PSMN2R0-30PL,127 meets the primary substitution criteria (30V, TO-220-3, N-Channel MOSFET) and exceeds the current requirement (100A vs. 62A). However, the significantly elevated gate charge (117 nC vs. 19 nC) and input capacitance (6810 pF vs. 1990 pF) require verification that the gate driver circuit can accommodate these parameters. This part is suitable for applications where thermal performance and current margin are prioritized over switching speed.
Q: What is the significance of on-resistance (Rds On) in substitute selection?
A: On-resistance directly determines conduction losses and heat generation. Lower on-resistance reduces power dissipation and thermal stress. The IRLB8721PBF (8.7 mOhm) provides improved efficiency compared to the IRF3707 (12.5 mOhm). The PSMN2R0-30PL,127 (2.1 mOhm) offers the lowest losses but requires evaluation of gate charge compatibility.
Q: Is the TO-220-3 package identical across all substitute parts?
A: Yes. All substitute parts use the TO-220-3 package, ensuring mechanical and thermal interface compatibility. Pin configuration and mounting requirements are identical to the IRF3707.
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