IRF3515STRL Equivalent & Substitute Parts

Part Overview

The IRF3515STRL is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 150V drain-to-source voltage with 41A continuous drain current at 25°C. The device is housed in a D2PAK (TO-263-3) surface mount package and is designed for 200W power dissipation. This part is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement continuity. Substitute parts must maintain compatibility with the D2PAK package format and preserve critical electrical parameters within acceptable operating ranges.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	150	V
Continuous Drain Current (Id) @ 25°C	41	A (Tc)
On-State Resistance (Rds On Max) @ 25A, 10V	45	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4.5	V
Power Dissipation (Max)	200	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	D2PAK (TO-263-3)	Surface Mount
Gate Charge (Qg) @ 10V	107	nC

Substitute Part Grouping Explanation

Substitution eligibility for the IRF3515STRL is determined by the following criteria:

Primary Compatibility Requirements:

Drain-to-Source Voltage (Vdss): Must be ≥150V to maintain voltage rating compatibility
Package Type: Must be D2PAK (TO-263-3) for mechanical and thermal interface compatibility
Mounting Type: Must be Surface Mount
FET Type: Must be N-Channel MOSFET

Secondary Performance Parameters:

Continuous Drain Current (Id): Substitute must meet or exceed 41A at 25°C to ensure current handling capability
On-State Resistance (Rds On): Lower values indicate improved performance; values ≤45mOhm at rated conditions are preferred
Power Dissipation: Substitute must support ≥200W to maintain thermal design margins
Operating Temperature Range: Must encompass the -55°C to 175°C specification

Compliance Considerations:

RoHS Status: Active substitutes with ROHS3 compliance are preferred for new designs
Moisture Sensitivity Level: MSL 1 (Unlimited) is standard across all candidates

The three substitute parts listed (IRFS4228PBF, AOB254L, STB75NF20) each satisfy the primary compatibility requirements and offer distinct performance trade-offs documented in the parameter comparison table below.

Parameter Comparison

Parameter	IRF3515STRL (Main)	IRFS4228PBF	AOB254L	STB75NF20
Manufacturer	Infineon Technologies	Infineon Technologies	Alpha & Omega Semiconductor	STMicroelectronics
Vdss (V)	150	150	150	200
Id @ 25°C (A)	41	83	32	75
Rds On Max (mOhm)	45 @ 25A, 10V	15 @ 33A, 10V	46 @ 20A, 10V	34 @ 37A, 10V
Power Dissipation Max (W)	200	330	125	190
Gate Charge Qg @ 10V (nC)	107	107	40	84
Vgs(th) @ 250µA (V)	4.5	5	2.7	4
Operating Temperature (°C)	-55 to 175	-40 to 175	-55 to 175	-50 to 150
Package	D2PAK	D2PAK	TO-263 (D2PAK)	D2PAK
Product Status	Obsolete	Obsolete	Active	Active
RoHS Status	Non-compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

IRFS4228PBF (Infineon Technologies): This substitute offers doubled continuous drain current (83A vs. 41A) with significantly reduced on-state resistance (15mOhm vs. 45mOhm). Power dissipation capability increases to 330W. The part maintains identical gate charge (107nC) and voltage rating (150V). However, the minimum operating temperature is -40°C rather than -55°C, and the part is classified as obsolete. ROHS3 compliance is achieved. This option is suitable for applications requiring enhanced current handling and reduced conduction losses.

AOB254L (Alpha & Omega Semiconductor Inc.): This substitute maintains the 150V voltage rating and D2PAK package compatibility. Continuous drain current is 32A, below the original 41A specification. On-state resistance is comparable at 46mOhm. Gate charge is significantly lower at 40nC, reducing switching losses. Power dissipation is limited to 125W, below the original 200W specification. The part is classified as active with ROHS3 compliance and supports the full -55°C to 175°C temperature range. This option is suitable for applications where gate charge reduction is prioritized and current requirements can be met at 32A.

STB75NF20 (STMicroelectronics): This substitute provides 75A continuous drain current with improved on-state resistance (34mOhm vs. 45mOhm). The voltage rating is elevated to 200V, providing additional voltage margin. Power dissipation is 190W, slightly below the original 200W. Gate charge is 84nC. The part is classified as active with ROHS3 compliance. The maximum operating temperature is 150°C, below the original 175°C specification. This option is suitable for applications requiring higher voltage headroom and increased current capacity with active product support.

Frequently Asked Questions (FAQ)

Q: Can the IRF3515STRL be directly replaced with any of these substitutes?

A: Direct replacement depends on circuit requirements. All three substitutes maintain D2PAK package compatibility and 150V or higher voltage ratings. However, differences in current ratings, on-state resistance, and power dissipation must be evaluated against your specific application. AOB254L has lower current rating (32A vs. 41A). IRFS4228PBF and STB75NF20 exceed the original current specification and may require thermal design review.

Q: What is the primary advantage of IRFS4228PBF over the original IRF3515STRL?

A: IRFS4228PBF provides doubled current capacity (83A vs. 41A) and significantly lower on-state resistance (15mOhm vs. 45mOhm), resulting in reduced conduction losses and improved thermal performance. Power dissipation capability increases from 200W to 330W. Gate charge remains identical at 107nC.

Q: Why does AOB254L have lower continuous drain current than the original part?

A: AOB254L is rated for 32A continuous drain current at 25°C (Tc), compared to 41A for IRF3515STRL. This reflects different die design and thermal characteristics. However, AOB254L offers significantly lower gate charge (40nC vs. 107nC), reducing switching losses. Selection depends on whether your application is current-limited or switching-loss-limited.

Q: Is STB75NF20 suitable for applications requiring -55°C operation?

A: STB75NF20 has a minimum operating temperature of -50°C, not -55°C. If your application requires operation at -55°C, this part does not meet the temperature specification. AOB254L and IRFS4228PBF support -55°C and -40°C respectively; verify which meets your lower temperature requirement.

Q: What is the significance of the 200V rating on STB75NF20 compared to the 150V original?

A: The 200V Vdss rating on STB75NF20 provides additional voltage margin above the 150V requirement. This allows operation in circuits with higher transient voltage spikes without exceeding the device rating. The higher voltage rating does not negatively impact 150V circuit operation.

Q: Are all substitute parts RoHS compliant?

A: IRFS4228PBF, AOB254L, and STB75NF20 are all ROHS3 compliant. The original IRF3515STRL is RoHS non-compliant. For new designs or procurement requiring RoHS compliance, all three substitutes are acceptable from a regulatory standpoint.

Q: Which substitute is recommended for thermal-constrained applications?

A: IRFS4228PBF offers the highest power dissipation capability (330W) and lowest on-state resistance (15mOhm), making it optimal for thermal-constrained applications where conduction loss minimization is critical. STB75NF20 (190W) is the next option. AOB254L (125W) is the most thermally limited.

Q: Can gate charge differences affect circuit performance?

A: Yes. AOB254L has significantly lower gate charge (40nC vs. 107nC), reducing the charge that must be supplied by the gate driver. This results in faster switching and lower gate drive power dissipation. IRFS4228PBF maintains identical gate charge (107nC), requiring no gate driver redesign. STB75NF20 (84nC) represents an intermediate value.

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