IRF3415PBF Equivalent & Substitute Parts

Part Overview

The IRF3415PBF is an N-Channel MOSFET manufactured by Infineon Technologies in the HEXFET® series. This device operates at 150V drain-to-source voltage with a continuous drain current rating of 43A at 25°C and maximum power dissipation of 200W. The component is packaged in a Through Hole TO-220AB configuration and maintains Active product status with full RoHS3 compliance.

Substitute parts are necessary when the IRF3415PBF becomes unavailable due to supply constraints, when alternative packaging formats are required for specific board layouts, or when enhanced electrical performance characteristics are needed within compatible parameter ranges.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	150	V
Continuous Drain Current (Id) @ 25°C	43	A
Power Dissipation (Max)	200	W
Rds On (Max) @ 22A, 10V	42	mOhm
Gate Charge (Qg) @ 10V	200	nC
Input Capacitance (Ciss) @ 25V	2400	pF
Operating Temperature Range	-55 to 175	°C
Package Type	TO-220AB	Through Hole

Substitute Part Grouping Explanation

Substitution eligibility for the IRF3415PBF is determined by the following critical parameters:

Mandatory Compatibility Criteria:

Drain to Source Voltage (Vdss): 150V minimum
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature Range: -55°C to 175°C minimum
Mounting Type: Through Hole
RoHS3 Compliance: Required

Performance Matching Criteria:

Continuous Drain Current (Id): Equal to or greater than 43A
Rds On (Max): Equal to or lower than 42mOhm (lower values indicate improved performance)
Power Dissipation: Equal to or greater than 200W
Gate Charge (Qg): Lower values reduce switching losses

Packaging Considerations:

Primary substitute format: TO-220AB (identical pinout and thermal characteristics)
Secondary substitute format: TO-247AC (different pinout, requires PCB layout modification)

The substitute parts listed below meet all mandatory criteria and are grouped by substitution type: manufacturer-recommended direct replacements with enhanced specifications, parametric equivalents with alternative packaging, and obsolete alternatives with equivalent electrical characteristics.

Parameter Comparison

Parameter	IRF3415PBF (Main)	IRFB4321PBF	IRFB4615PBF	IRFP3415PBF	HUF75842P3
Manufacturer	Infineon	Infineon	Infineon	Infineon	onsemi
Vdss (V)	150	150	150	150	150
Id @ 25°C (A)	43	85	35	43	43
Power Dissipation (W)	200	350	144	200	230
Rds On @ 10V (mOhm)	42 @ 22A	15 @ 33A	39 @ 21A	42 @ 22A	42 @ 43A
Gate Charge @ 10V (nC)	200	110	26	200	175
Ciss @ Vds (pF)	2400 @ 25V	4460 @ 50V	1750 @ 50V	2400 @ 25V	2730 @ 25V
Operating Temp (°C)	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175
Package	TO-220AB	TO-220AB	TO-220AB	TO-247AC	TO-220-3
Product Status	Active	Active	Active	Active	Obsolete
RoHS3 Compliance	Yes	Yes	Yes	Yes	Yes

Engineering Selection Recommendations

IRFB4321PBF (Manufacturer-Recommended Upgrade)

The IRFB4321PBF is an Infineon HEXFET® device with identical voltage rating and current capability to the IRF3415PBF. This substitute provides enhanced performance through significantly lower on-resistance (15mOhm versus 42mOhm), reduced gate charge (110nC versus 200nC), and higher power dissipation capability (350W versus 200W). The TO-220AB package maintains direct PCB compatibility without layout modifications. This part is recommended for applications requiring improved thermal performance or reduced switching losses. Active product status ensures long-term availability.

IRFB4615PBF (Manufacturer-Recommended Alternative)

The IRFB4615PBF operates at the same 150V voltage rating but with reduced continuous drain current (35A versus 43A). This device features lower gate charge (26nC) and reduced input capacitance (1750pF), making it suitable for applications with lower current requirements or where switching speed optimization is prioritized. The TO-220AB package provides direct compatibility. Active product status and full RoHS3 compliance are maintained. This substitute is appropriate when the full 43A current rating is not required and lower switching losses are beneficial.

IRFP3415PBF (Parametric Equivalent)

The IRFP3415PBF is an Infineon HEXFET® device with identical electrical specifications to the IRF3415PBF but packaged in TO-247AC format. This substitute is selected when the larger TO-247AC package is required for improved thermal management or when PCB layout constraints necessitate the three-lead configuration. Electrical performance is equivalent across all critical parameters. Active product status and full RoHS3 compliance apply. PCB layout modification is required due to different pinout geometry.

HUF75842P3 (Obsolete Equivalent)

The HUF75842P3 is an onsemi UltraFET™ device with equivalent electrical specifications to the IRF3415PBF, including identical 150V voltage rating, 43A continuous current, and 42mOhm on-resistance. The TO-220-3 package provides direct mechanical compatibility. However, this device carries Obsolete product status, indicating discontinued manufacturing and limited future availability. This substitute is acceptable only for legacy system maintenance or when existing inventory is available. New designs should not incorporate this part.

Frequently Asked Questions (FAQ)

Q: Can IRFB4321PBF directly replace IRF3415PBF without circuit modification?

A: Yes. The IRFB4321PBF is a direct pin-compatible substitute in TO-220AB packaging. The enhanced electrical specifications (lower Rds On, reduced gate charge, higher power dissipation) are backward-compatible with circuits designed for the IRF3415PBF. No circuit modifications are required.

Q: What is the primary advantage of IRFB4321PBF over IRF3415PBF?

A: The IRFB4321PBF provides significantly lower on-resistance (15mOhm versus 42mOhm), resulting in reduced conduction losses and improved thermal performance. Gate charge is also reduced (110nC versus 200nC), enabling faster switching transitions and lower switching losses in high-frequency applications.

Q: Is IRFB4615PBF suitable for applications requiring 43A continuous current?

A: No. The IRFB4615PBF is rated for 35A continuous drain current, which is below the 43A requirement of the IRF3415PBF. This substitute is appropriate only for applications with maximum current requirements of 35A or less.

Q: What is the key difference between IRFP3415PBF and IRF3415PBF?

A: The IRFP3415PBF and IRF3415PBF have identical electrical specifications but differ in packaging. The IRFP3415PBF uses TO-247AC (three-lead) format, while the IRF3415PBF uses TO-220AB (three-lead) format. The TO-247AC package provides larger surface area for improved heat dissipation. PCB layout modification is required when substituting between these packages.

Q: Why is HUF75842P3 listed as a substitute if it is obsolete?

A: The HUF75842P3 is included for reference purposes in legacy system maintenance scenarios. This onsemi device provides equivalent electrical performance to the IRF3415PBF. However, Obsolete product status indicates manufacturing has been discontinued. New designs must not incorporate this part. Existing inventory may be available from secondary sources for maintenance applications only.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All listed substitute parts (IRFB4321PBF, IRFB4615PBF, IRFP3415PBF, and HUF75842P3) carry RoHS3 compliance certification, meeting environmental and hazardous substance restrictions.

Q: What is the impact of lower gate charge on circuit performance?

A: Lower gate charge (measured in nanocoulombs) reduces the energy required to switch the MOSFET on and off. Substitutes with lower gate charge values (IRFB4321PBF at 110nC, IRFB4615PBF at 26nC) enable faster switching transitions, reduced switching losses, and lower heat generation in high-frequency switching applications.

Q: Can IRFP3415PBF be used in existing PCB designs without layout changes?

A: No. The IRFP3415PBF uses TO-247AC packaging with different pinout geometry compared to the TO-220AB format of the IRF3415PBF. PCB layout modification is required, including new pad patterns and potential trace routing adjustments. The TO-247AC package is larger and may require additional board space.

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