IRF3315S MOSFET N-Channel 150V 21A Equivalent & Substitute Parts

Part Overview

The IRF3315S is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 150V drain-to-source voltage and 21A continuous drain current in a surface mount D2PAK package. This device is classified as obsolete, making identification of functionally equivalent alternatives necessary for ongoing design support and procurement continuity. The HEXFET® series component operates across a wide temperature range from -55°C to 175°C and is suitable for switching applications requiring moderate voltage and current ratings.

Substiute Parts

IRF3315S

Infineon TechnologiesIn Stock: 15351IRF3315S Datasheet

Current PartRFQ

IXTA36N30P

IXYSIn Stock: 3152IXTA36N30P Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IRF3315S requires evaluation against the following critical parameters that define functional equivalence:

Mandatory Compatibility Criteria:

• Drain-to-Source Voltage (Vdss) must equal or exceed 150V
• Continuous Drain Current (Id) must equal or exceed 21A
• Package type must be D2PAK/TO-263 surface mount configuration
• FET technology must be N-Channel MOSFET
• On-State Resistance (Rds On) characteristics must support equivalent switching performance

Acceptable Variation Parameters:

• Gate Threshold Voltage (Vgs(th)) may vary within standard MOSFET tolerances
• Gate Charge (Qg) may differ without affecting primary switching function
• Power Dissipation ratings may exceed the original specification
• Operating temperature range may differ if minimum requirements are met

The IXTA36N30P from IXYS meets the mandatory criteria for voltage and current ratings while maintaining D2PAK package compatibility. However, this substitute exhibits higher voltage rating (300V) and current capacity (36A), which represents an upgrade path rather than a direct replacement.

Parameter Comparison

Engineering Selection Recommendations

Product Status Consideration: The IRF3315S is classified as obsolete, while the IXTA36N30P maintains active product status with ongoing manufacturer support. Selection of the IXTA36N30P provides access to current production inventory and technical documentation.

Compliance and Certification: The IXTA36N30P is ROHS3 compliant, whereas the IRF3315S is non-compliant. For applications subject to RoHS regulations, the IXTA36N30P satisfies regulatory requirements. Both devices carry REACH Unaffected status and EAR99 ECCN classification.

Electrical Performance: The IXTA36N30P provides higher voltage and current ratings (300V/36A versus 150V/21A), enabling use in higher-power applications. The substitute device exhibits lower gate charge (70nC versus 95nC), resulting in faster switching characteristics. On-state resistance at comparable gate drive conditions shows marginal increase (110mOhm versus 82mOhm), which is acceptable for most switching applications.

Thermal Characteristics: The IXTA36N30P supports significantly higher power dissipation (300W Tc versus 94W Tc), providing enhanced thermal margin. The maximum operating temperature is reduced by 25°C (150°C versus 175°C), which may be a limiting factor in high-temperature applications.

Packaging and Moisture Sensitivity: Both devices use compatible D2PAK/TO-263 surface mount packages. The IXTA36N30P has MSL rating of 3 (168 hours) compared to MSL 1 (unlimited) for the IRF3315S, requiring controlled moisture exposure during storage and handling.

Frequently Asked Questions (FAQ)

Q: Can the IXTA36N30P directly replace the IRF3315S in existing PCB designs?

A: Yes, from a package and pinout perspective. Both devices use D2PAK (TO-263-3) surface mount packages with identical lead configurations. However, the higher voltage rating and different gate threshold voltage require circuit verification to ensure proper gate drive conditions and switching behavior.

Q: What are the key differences in electrical performance?

A: The IXTA36N30P provides higher voltage (300V versus 150V) and current (36A versus 21A) ratings. Gate charge is lower (70nC versus 95nC), enabling faster switching. On-state resistance is slightly higher (110mOhm versus 82mOhm at comparable conditions). These differences are within acceptable ranges for most switching applications but should be evaluated for specific circuit requirements.

Q: Is the IXTA36N30P suitable for applications originally designed for the IRF3315S?

A: The IXTA36N30P is suitable for applications operating at or below 150V and 21A, as it exceeds these specifications. Circuit designers must verify gate drive voltage compatibility, as the IXTA36N30P has a higher gate threshold voltage (5.5V versus 4V). Applications requiring operation above 175°C may be limited by the IXTA36N30P's maximum temperature of 150°C.

Q: What is the impact of different moisture sensitivity levels?

A: The IXTA36N30P (MSL 3, 168 hours) requires more stringent moisture control than the IRF3315S (MSL 1, unlimited). Components must be stored in dry conditions and used within specified timeframes after moisture exposure. This affects procurement, storage, and assembly procedures.

Q: Are there any compliance advantages to using the IXTA36N30P?

A: Yes. The IXTA36N30P is ROHS3 compliant, whereas the IRF3315S is non-compliant. For applications subject to RoHS directives, the IXTA36N30P satisfies regulatory requirements. Both devices are REACH unaffected.

Q: How do gate charge differences affect circuit design?

A: Lower gate charge (70nC versus 95nC) in the IXTA36N30P results in faster switching transitions and reduced gate drive power requirements. This may improve overall circuit efficiency but requires verification that existing gate drive circuits can accommodate the different threshold voltage and charge characteristics.