IRF3315PBF N-Channel 150V 23A MOSFET Equivalent & Substitute Parts

Part Overview

The IRF3315PBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 150V drain-to-source voltage with 23A continuous drain current at 25°C. This device features the HEXFET® series technology in a Through Hole TO-220AB package. The IRF3315PBF is classified as Obsolete, making identification of equivalent and substitute parts essential for design continuity and procurement planning. Substitute parts must maintain electrical compatibility across voltage rating, current capacity, and thermal characteristics while accommodating the same or compatible package footprint.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	150	V
Continuous Drain Current (Id) @ 25°C	23	A (Tc)
On-State Resistance (Rds On Max) @ Id, Vgs	70	mOhm @ 12A, 10V
Gate Threshold Voltage (Vgs(th) Max) @ Id	4	V @ 250µA
Gate Charge (Qg Max) @ Vgs	95	nC @ 10V
Power Dissipation (Max)	94	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	TO-220AB	Through Hole
RoHS Status	ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the IRF3315PBF is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal 150V
Package Type: Must be TO-220AB (Through Hole)
FET Type: Must be N-Channel MOSFET
Technology: Metal Oxide Semiconductor
Operating Temperature Range: Must support -55°C to 175°C
Compliance: ROHS3 Compliant, REACH Unaffected

Secondary Compatibility Parameters:

Continuous Drain Current (Id): Acceptable range 17A to 35A at 25°C
On-State Resistance (Rds On): Lower values indicate improved performance
Gate Charge (Qg): Lower values reduce switching losses
Power Dissipation: Must support thermal requirements of the application

The three substitute parts listed below meet all primary criteria and fall within acceptable ranges for secondary parameters based on the provided specifications.

Parameter Comparison

Parameter	IRF3315PBF (Main)	IRFB4019PBF	IRFB4615PBF	PHP28NQ15T,127
Manufacturer	Infineon Technologies	Infineon Technologies	Infineon Technologies	Nexperia USA Inc.
Vdss (V)	150	150	150	150
Id @ 25°C (A)	23	17	35	28.5
Rds On Max (mOhm)	70 @ 12A, 10V	95 @ 10A, 10V	39 @ 21A, 10V	65 @ 18A, 10V
Qg Max (nC)	95 @ 10V	20 @ 10V	26 @ 10V	24 @ 10V
Power Dissipation Max (W)	94	80	144	150
Operating Temperature (°C)	-55 to 175	-55 to 175	-55 to 175	-55 to 175
Package	TO-220AB	TO-220AB	TO-220AB	TO-220AB
Product Status	Obsolete	Active	Active	Obsolete
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

IRFB4019PBF (Infineon Technologies)

This substitute is suitable for applications where the continuous drain current requirement is 17A or lower. The IRFB4019PBF is classified as Active product status, ensuring long-term availability and supply chain stability. The higher on-state resistance (95 mOhm vs. 70 mOhm) results in increased power dissipation under identical operating conditions. This part is recommended only when current requirements do not exceed 17A and thermal management can accommodate the 80W maximum power dissipation rating.

IRFB4615PBF (Infineon Technologies)

This substitute provides superior electrical performance with 35A continuous drain current and lower on-state resistance (39 mOhm). The IRFB4615PBF is classified as Active product status with HEXFET® series designation matching the original part. This device supports higher current applications and offers improved thermal characteristics with 144W maximum power dissipation. The IRFB4615PBF is recommended for applications requiring current capacity at or above 23A, as it provides performance margin and enhanced reliability.

PHP28NQ15T,127 (Nexperia USA Inc.)

This substitute operates at 28.5A continuous drain current with 65 mOhm on-state resistance and 150W maximum power dissipation. The PHP28NQ15T,127 features TrenchMOS™ technology and is classified as Obsolete product status. While electrical parameters fall within acceptable ranges, the obsolete status limits long-term procurement viability. This part is suitable for immediate replacement applications but should not be selected for new designs requiring extended product lifecycle support.

All three substitutes maintain ROHS3 compliance and REACH unaffected status, ensuring regulatory compatibility with the original IRF3315PBF.

Frequently Asked Questions (FAQ)

Q: Can IRFB4019PBF directly replace IRF3315PBF in all applications?

A: No. The IRFB4019PBF has lower continuous drain current (17A vs. 23A) and higher on-state resistance (95 mOhm vs. 70 mOhm). Direct substitution is limited to applications where the circuit operates at or below 17A continuous current and thermal design accommodates the 80W power dissipation limit.

Q: What is the primary advantage of IRFB4615PBF over the original IRF3315PBF?

A: The IRFB4615PBF provides higher current capacity (35A vs. 23A), lower on-state resistance (39 mOhm vs. 70 mOhm), and greater power dissipation capability (144W vs. 94W). These characteristics result in reduced power losses and improved thermal performance. The IRFB4615PBF is classified as Active, ensuring superior long-term availability.

Q: Are all substitute parts pin-compatible with IRF3315PBF?

A: Yes. All substitute parts use the TO-220AB package with identical pin configuration and Through Hole mounting. PCB layout modifications are not required for package compatibility.

Q: Why is PHP28NQ15T,127 listed as a substitute if it is Obsolete?

A: The PHP28NQ15T,127 meets all primary electrical and mechanical substitution criteria (150V Vdss, 28.5A Id, TO-220AB package, ROHS3 compliance). However, its Obsolete status indicates limited future availability. This part is included for reference in applications requiring immediate replacement but should not be selected for new designs.

Q: What is the impact of different gate charge (Qg) values on circuit performance?

A: Gate charge affects switching speed and driver circuit requirements. The IRF3315PBF has 95 nC gate charge, while substitutes range from 20 nC to 26 nC. Lower gate charge reduces switching losses and allows faster switching frequencies. Circuit designers must verify that gate driver circuits can accommodate the specified gate charge of the selected substitute.

Q: Can I use IRFB4615PBF in a circuit designed for 23A if thermal management is adequate?

A: Yes. The IRFB4615PBF is rated for 35A continuous current, so operation at 23A is within specification. The lower on-state resistance (39 mOhm vs. 70 mOhm) results in reduced power dissipation and improved thermal margin, making this an acceptable substitution with performance benefits.

Q: Are there compliance differences between the main part and substitutes?

A: No. All parts listed (IRF3315PBF, IRFB4019PBF, IRFB4615PBF, and PHP28NQ15T,127) are ROHS3 Compliant and REACH Unaffected. Regulatory compliance is equivalent across all options.

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