IRF3315 N-Channel MOSFET 150V 27A TO-220AB Equivalent & Substitute Parts

Part Overview

The IRF3315 is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 150V drain-to-source voltage with 27A continuous drain current at 25°C. This device features the HEXFET® series technology and is housed in a TO-220AB through-hole package. The IRF3315 is classified as obsolete, making identification of functionally equivalent substitute components necessary for ongoing design support, maintenance, and production continuity. Substitute parts must maintain electrical compatibility across voltage, current, and thermal specifications while accommodating the through-hole TO-220AB package format.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	150	V
Continuous Drain Current (Id) @ 25°C	27	A (Tc)
On-State Resistance (Rds On) @ 12A, 10V	70	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	95	nC
Power Dissipation (Max)	136	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	TO-220-3	Through Hole

Substitute Part Grouping Explanation

Substitution of the IRF3315 is determined by strict equivalence across the following electrical and mechanical parameters:

Primary Equivalence Criteria:

Drain-to-Source Voltage (Vdss): Must equal 150V
Package Type: Must be TO-220AB through-hole configuration
FET Type: Must be N-Channel MOSFET technology
Operating Temperature Range: Must support -55°C to 175°C

Secondary Compatibility Parameters:

Continuous Drain Current (Id): Substitute must meet or exceed 27A at 25°C
On-State Resistance (Rds On): Lower or equivalent values ensure thermal performance
Gate Charge (Qg): Values within the specified range ensure gate drive compatibility
Power Dissipation: Must support thermal requirements of the application

The three substitute parts listed (IRFB4019PBF, IRFB4615PBF, PHP28NQ15T,127) satisfy the primary equivalence criteria. Differences in secondary parameters reflect design trade-offs between current capacity, on-state resistance, and gate charge characteristics.

Parameter Comparison

Parameter	IRF3315	IRFB4019PBF	IRFB4615PBF	PHP28NQ15T,127	Unit
Manufacturer	Infineon	Infineon	Infineon	Nexperia USA Inc.	—
Vdss	150	150	150	150	V
Id @ 25°C	27	17	35	28.5	A (Tc/Tj)
Rds On @ 10V	70 @ 12A	95 @ 10A	39 @ 21A	65 @ 18A	mOhm
Vgs(th) @ specified Id	4 @ 250µA	4.9 @ 50µA	5 @ 100µA	4 @ 1mA	V
Qg @ 10V	95	20	26	24	nC
Power Dissipation (Max)	136	80	144	150	W (Tc)
Operating Temperature	-55 to 175	-55 to 175	-55 to 175	-55 to 175	°C (TJ)
Package	TO-220-3	TO-220-3	TO-220-3	TO-220-3	Through Hole
Product Status	Obsolete	Active	Active	Obsolete	—
RoHS Status	Non-compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	—

Engineering Selection Recommendations

IRFB4615PBF (Infineon Technologies) is the primary recommended substitute for the IRF3315. This device is classified as Active product status with ROHS3 compliance, ensuring long-term availability and regulatory alignment. The IRFB4615PBF exceeds the IRF3315 in continuous drain current (35A vs. 27A) and power dissipation (144W vs. 136W), providing design margin for thermal and current-handling requirements. The on-state resistance of 39 mOhm at 21A, 10V is significantly lower than the IRF3315 specification, reducing conduction losses. Gate charge is reduced to 26 nC, improving switching efficiency. The HEXFET® series designation confirms technology compatibility.

IRFB4019PBF (Infineon Technologies) serves as an alternative for applications where lower current capacity is acceptable. This device is Active with ROHS3 compliance. The 17A continuous drain current is below the IRF3315 specification and should be selected only when application requirements do not demand the full 27A capacity. The 80W power dissipation is reduced compared to the IRF3315, limiting thermal headroom. Gate charge of 20 nC provides improved switching performance.

PHP28NQ15T,127 (Nexperia USA Inc.) provides electrical characteristics closely aligned with the IRF3315, with 28.5A continuous drain current and 150W power dissipation. However, this device is classified as Obsolete, limiting its suitability for new designs or long-term production support despite ROHS3 compliance. The TrenchMOS™ technology differs from the HEXFET® series of the IRF3315, introducing potential differences in switching behavior and gate drive requirements.

For new designs and production continuity, IRFB4615PBF is the recommended primary substitute. For applications with reduced current requirements, IRFB4019PBF is acceptable. The PHP28NQ15T,127 should be avoided for new applications due to obsolete status.

Frequently Asked Questions (FAQ)

Q: Can the IRFB4019PBF replace the IRF3315 in all applications?

A: No. The IRFB4019PBF is rated for 17A continuous drain current, which is below the IRF3315 specification of 27A. Substitution is valid only for applications where the actual operating current does not exceed 17A at 25°C. Verify application current requirements before selection.

Q: What is the significance of the lower gate charge in substitute parts?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. The IRFB4615PBF (26 nC) and IRFB4019PBF (20 nC) have significantly lower gate charge than the IRF3315 (95 nC). This reduces gate drive power dissipation and allows faster switching transitions, improving overall circuit efficiency. Gate drive circuits must be verified for compatibility with the lower charge requirements.

Q: Why is the IRF3315 listed as obsolete?

A: The IRF3315 is no longer in active production. Infineon Technologies has transitioned to newer MOSFET designs with improved performance characteristics. The IRFB4615PBF and IRFB4019PBF represent the current product line for equivalent voltage and package specifications.

Q: Are all substitute parts RoHS compliant?

A: The IRFB4615PBF and IRFB4019PBF are ROHS3 compliant. The IRF3315 is RoHS non-compliant, and the PHP28NQ15T,127 is ROHS3 compliant. For applications requiring RoHS compliance, select IRFB4615PBF or IRFB4019PBF.

Q: Can I use the IRFB4615PBF in place of the IRF3315 without circuit modifications?

A: The IRFB4615PBF is a direct pin-compatible substitute in the TO-220AB package. However, the significantly lower on-state resistance (39 mOhm vs. 70 mOhm) and gate charge (26 nC vs. 95 nC) may require verification of gate drive circuit performance and thermal management. Conduction losses will be reduced, potentially requiring thermal design review.

Q: What is the difference between the HEXFET® and TrenchMOS™ technologies?

A: Both are N-Channel MOSFET technologies with different internal structures. HEXFET® (used in IRF3315 and IRFB4615PBF) and TrenchMOS™ (used in PHP28NQ15T,127) differ in switching characteristics, gate charge distribution, and thermal performance. While both are functionally equivalent for voltage and current ratings, gate drive timing and switching losses may differ slightly. Verify gate drive circuit compatibility when transitioning between technologies.

Q: Is the PHP28NQ15T,127 suitable for new product designs?

A: No. The PHP28NQ15T,127 is classified as Obsolete, indicating discontinued production. While ROHS3 compliant, its obsolete status limits long-term availability and supply chain reliability. For new designs, select IRFB4615PBF or IRFB4019PBF, both of which are Active products.

Q: How do I verify that a substitute part is compatible with my application?

A: Confirm that the substitute part meets or exceeds the following specifications: (1) Vdss ≥ 150V, (2) Id ≥ application current requirement at 25°C, (3) Operating temperature range includes -55°C to 175°C, (4) TO-220AB package compatibility with PCB layout, (5) Gate drive voltage compatibility with existing driver circuits. Review the detailed datasheet for the selected substitute part.

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