IRF3205ZSTRR N-Channel MOSFET 55V 75A D2PAK Equivalent & Substitute Parts

Part Overview

The IRF3205ZSTRR is an N-Channel MOSFET manufactured by Vishay Siliconix, rated for 55V drain-to-source voltage and 75A continuous drain current in a surface mount D2PAK (TO-263) package. This device is designed for high-current switching applications requiring efficient power dissipation up to 170W at case temperature. The IRF3205ZSTRR is currently discontinued at DiGi Electronics, making equivalent and substitute parts necessary for ongoing design support and procurement.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	55	V
Continuous Drain Current (Id) @ 25°C	75	A
Rds On (Max) @ Id, Vgs	6.5 mOhm @ 66A, 10V	—
Gate Charge (Qg) @ Vgs	110 nC @ 10V	—
Power Dissipation (Max)	170	W
Operating Temperature Range	-55 to 175	°C
Package Type	TO-263-3 (D2PAK)	—
Mounting Type	Surface Mount	—

Substitute Part Grouping Explanation

Substitution of the IRF3205ZSTRR is determined by the following critical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 55V
Continuous Drain Current (Id): Must equal or exceed 75A at 25°C
Package Type: Must be TO-263-3 (D2PAK) for mechanical and thermal compatibility
Mounting Type: Must be Surface Mount
Operating Temperature Range: Must span -55°C to 175°C minimum

Secondary Compatibility Factors:

On-resistance (Rds On): Lower values indicate improved efficiency
Gate Charge (Qg): Lower values reduce switching losses
Power Dissipation Rating: Higher ratings provide thermal margin

Substitute parts are grouped into two categories: direct replacements matching the 55V/75A specification, and higher-performance alternatives with increased voltage or current ratings that maintain backward compatibility within the same package footprint.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On Max (mOhm)	Qg @ 10V (nC)	Power Dissipation (W)	Package	Product Status	RoHS Compliance
IRF3205ZSTRR	Vishay Siliconix	55	75	6.5	110	170	TO-263-3 (D2PAK)	Discontinued	Non-compliant
SQM110N05-06L_GE3	Vishay Siliconix	55	110	6.0	110	157	TO-263-3 (D2PAK)	Active	ROHS3 Compliant
BUK6607-55C,118	NXP USA Inc.	55	100	6.5	82	158	TO-263-3 (D2PAK)	Active	Not specified
BUK9606-55A,118	Nexperia USA Inc.	55	75	5.8	Not specified	300	TO-263-3 (D2PAK)	Obsolete	ROHS3 Compliant
BUK9608-55B,118	Nexperia USA Inc.	55	75	7.0	45	203	TO-263-3 (D2PAK)	Active	ROHS3 Compliant
IPB054N06N3GATMA1	Infineon Technologies	60	80	5.4	82	115	TO-263-3 (D2PAK)	Last Time Buy	ROHS3 Compliant
IRF3808STRLPBF	Infineon Technologies	75	106	7.0	220	200	TO-263-3 (D2PAK)	Active	ROHS3 Compliant
IRFS3307ZTRLPBF	Infineon Technologies	75	120	5.8	110	230	TO-263-3 (D2PAK)	Active	ROHS3 Compliant
PSMN7R6-60BS,118	Nexperia USA Inc.	60	92	7.8	38.7	149	TO-263-3 (D2PAK)	Active	ROHS3 Compliant
STB140NF55T4	STMicroelectronics	55	80	8.0	142	300	TO-263-3 (D2PAK)	Active	ROHS3 Compliant
BUK9606-75B,118	Nexperia USA Inc.	75	75	5.5	95	300	TO-263-3 (D2PAK)	Active	ROHS3 Compliant

Engineering Selection Recommendations

Direct Replacement (55V Rating):

The SQM110N05-06L_GE3 from Vishay Siliconix is the primary recommended substitute. It maintains the 55V Vdss specification, exceeds the 75A current requirement at 110A, and is ROHS3 compliant with active product status. The on-resistance of 6.0 mOhm matches the original specification, and gate charge remains at 110 nC, ensuring compatible switching characteristics.

The BUK9608-55B,118 from Nexperia USA Inc. provides an alternative 55V solution with active product status and ROHS3 compliance. It matches the 75A current rating and offers superior power dissipation at 203W. The lower gate charge of 45 nC reduces switching losses compared to the original device.

Higher Voltage Alternatives (60V–75V Rating):

The IPB054N06N3GATMA1 from Infineon Technologies operates at 60V, providing 5V additional voltage margin. It delivers 80A continuous current, exceeds the original 75A specification, and features the lowest on-resistance at 5.4 mOhm. However, this device is marked as Last Time Buy, limiting long-term availability.

The IRFS3307ZTRLPBF and IRF3808STRLPBF from Infineon Technologies are rated at 75V, providing maximum voltage headroom. Both are ROHS3 compliant with active product status. The IRFS3307ZTRLPBF delivers 120A continuous current with 5.8 mOhm on-resistance, while the IRF3808STRLPBF provides 106A at 7.0 mOhm. These devices are suitable for applications requiring higher voltage tolerance.

The BUK9606-75B,118 from Nexperia USA Inc. offers 75V rating with 75A current matching and exceptional power dissipation at 300W. It is ROHS3 compliant with active product status.

Equivalent Current Rating (55V, 75A–80A):

The STB140NF55T4 from STMicroelectronics maintains 55V rating with 80A current capacity. It is ROHS3 compliant and active. The 8.0 mOhm on-resistance is slightly higher than the original, and gate charge at 142 nC is elevated, but power dissipation capability reaches 300W.

The BUK6607-55C,118 from NXP USA Inc. provides 55V at 100A with 6.5 mOhm on-resistance matching the original specification. Gate charge is reduced to 82 nC, improving switching efficiency. This device carries AEC-Q101 automotive qualification.

Compliance and Availability:

All recommended substitutes except IPB054N06N3GATMA1 maintain active product status. The SQM110N05-06L_GE3, BUK9608-55B,118, BUK6607-55C,118, IRFS3307ZTRLPBF, IRF3808STRLPBF, PSMN7R6-60BS,118, STB140NF55T4, and BUK9606-75B,118 are ROHS3 compliant, addressing environmental and regulatory requirements. The original IRF3205ZSTRR is RoHS non-compliant and discontinued.

Frequently Asked Questions (FAQ)

Q: Can the SQM110N05-06L_GE3 directly replace the IRF3205ZSTRR without circuit modification?

A: Yes. The SQM110N05-06L_GE3 maintains identical 55V Vdss rating, exceeds the 75A current requirement, and uses the same TO-263-3 (D2PAK) package. Gate charge and on-resistance are compatible with the original design. No circuit changes are required.

Q: What is the advantage of selecting a higher voltage-rated device such as the IRFS3307ZTRLPBF (75V) over a 55V substitute?

A: Higher voltage-rated devices provide additional safety margin in applications subject to voltage transients or overshoot conditions. The IRFS3307ZTRLPBF delivers 120A continuous current versus the original 75A, and features 5.8 mOhm on-resistance with superior power dissipation at 230W. This is beneficial in high-reliability or harsh-environment applications.

Q: Are all substitute parts available in the same packaging as the IRF3205ZSTRR?

A: Yes. All listed substitutes use the TO-263-3 (D2PAK) package with identical mechanical dimensions and thermal characteristics. This ensures compatibility with existing PCB layouts and thermal management designs without modification.

Q: What is the significance of gate charge (Qg) differences between the original and substitute parts?

A: Gate charge determines the energy required to switch the MOSFET on and off. Lower gate charge reduces switching losses and allows faster switching speeds. The SQM110N05-06L_GE3 and IRFS3307ZTRLPBF maintain 110 nC gate charge matching the original. The BUK9608-55B,118 reduces this to 45 nC, improving efficiency in high-frequency applications. The PSMN7R6-60BS,118 offers the lowest at 38.7 nC.

Q: Why is the IPB054N06N3GATMA1 marked as Last Time Buy despite meeting electrical specifications?

A: Last Time Buy status indicates the manufacturer has announced end-of-life for this product. While currently available, procurement should transition to active alternatives such as the SQM110N05-06L_GE3 or IRFS3307ZTRLPBF to ensure long-term supply chain stability.

Q: How does on-resistance (Rds On) affect device selection?

A: On-resistance directly impacts power dissipation and heat generation during conduction. Lower Rds On values reduce I²R losses. The IPB054N06N3GATMA1 offers the lowest at 5.4 mOhm, while the STB140NF55T4 is highest at 8.0 mOhm. For applications with high continuous current or thermal constraints, lower Rds On devices are preferred.

Q: Are automotive-qualified alternatives available?

A: Yes. The BUK6607-55C,118 from NXP USA Inc. carries AEC-Q101 automotive qualification. The BUK9606-55A,118, BUK9606-75B,118, and BUK9608-55B,118 from Nexperia USA Inc. are also automotive-grade devices. These are suitable for automotive and industrial applications requiring qualification compliance.

Q: What is the thermal advantage of devices rated at 300W power dissipation compared to the original 170W?

A: Higher power dissipation ratings indicate superior thermal performance and heat transfer capability from the die to the case. Devices such as BUK9606-55A,118, BUK9606-75B,118, BUK9608-55B,118, and STB140NF55T4 rated at 300W provide greater thermal margin, allowing operation at higher ambient temperatures or with reduced heatsinking requirements compared to the original 170W device.

Q: Can substitutes with higher current ratings (110A, 120A) be used in applications designed for 75A?

A: Yes. Higher current-rated devices are backward compatible in applications designed for lower current. The device will operate within its safe operating area with reduced stress. This provides design margin and improved reliability. However, circuit protection (fuses, current-limiting resistors) must remain appropriate for the original 75A design specification.

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