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IRF3205ZLPBF N-Channel MOSFET Equivalent & Substitute Parts
Part Overview
The IRF3205ZLPBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 55V drain-to-source voltage with 75A continuous drain current at 25°C. This device is packaged in TO-262 through-hole configuration and belongs to the HEXFET® series. The IRF3205ZLPBF is classified as obsolete product status, making identification of equivalent and substitute parts essential for ongoing design support and procurement continuity. Substitute parts must maintain electrical compatibility within the specified parameter ranges while accommodating available inventory and active product status where applicable.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Drain to Source Voltage (Vdss) | 55 | V |
| Continuous Drain Current (Id) @ 25°C | 75 | A (Tc) |
| On-State Drain Resistance (Rds On Max) @ Id, Vgs | 6.5 mOhm @ 66A, 10V | mOhm |
| Gate Threshold Voltage (Vgs(th) Max) @ Id | 4 | V @ 250µA |
| Gate Charge (Qg Max) @ Vgs | 110 | nC @ 10V |
| Power Dissipation (Max) | 170 | W (Tc) |
| Operating Temperature Range | -55 to 175 | °C (TJ) |
| Package Type | TO-262-3 | Through Hole |
| RoHS Status | ROHS3 Compliant | - |
Substitute Part Grouping Explanation
Substitute parts for the IRF3205ZLPBF are identified based on the following electrical and mechanical compatibility criteria:
Primary Substitution Criteria:
- FET Type: N-Channel MOSFET technology
- Drain-to-Source Voltage (Vdss): Equal to or greater than 55V
- Continuous Drain Current (Id): Equal to or greater than 75A at 25°C
- Operating Temperature Range: -55°C to 175°C (TJ)
- Gate Threshold Voltage (Vgs(th)): Maximum 4V @ specified current
- Maximum Gate Voltage (Vgs): ±20V
- Mounting Type: Through Hole configuration
- RoHS Compliance: ROHS3 Compliant
Substitute Parts Identified:
-
IRFSL3306PBF (Infineon Technologies): Meets all electrical parameters with enhanced ratings (60V, 120A). Same TO-262 package. Active product status.
-
FDP038AN06A0 (onsemi): Meets voltage and current requirements (60V, 80A Tc). Different package (TO-220-3). Active product status.
Parameter Comparison
| Parameter | IRF3205ZLPBF | IRFSL3306PBF | FDP038AN06A0 | Unit |
|---|---|---|---|---|
| Manufacturer | Infineon | Infineon | onsemi | - |
| FET Type | N-Channel | N-Channel | N-Channel | - |
| Vdss | 55 | 60 | 60 | V |
| Id @ 25°C | 75 (Tc) | 120 (Tc) | 80 (Tc) | A |
| Rds On (Max) @ Id, Vgs | 6.5 @ 66A, 10V | 4.2 @ 75A, 10V | 3.8 @ 80A, 10V | mOhm |
| Vgs(th) (Max) @ Id | 4 @ 250µA | 4 @ 150µA | 4 @ 250µA | V |
| Gate Charge (Qg Max) @ Vgs | 110 @ 10V | 120 @ 10V | 124 @ 10V | nC |
| Power Dissipation (Max) | 170 (Tc) | 230 (Tc) | 310 (Tc) | W |
| Operating Temperature | -55 to 175 | -55 to 175 | -55 to 175 | °C (TJ) |
| Package | TO-262-3 | TO-262-3 | TO-220-3 | - |
| Product Status | Obsolete | Active | Active | - |
| RoHS Status | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant | - |
Engineering Selection Recommendations
IRFSL3306PBF Selection: This substitute is recommended as the primary equivalent for the IRF3205ZLPBF. Both devices share identical TO-262-3 package configuration, eliminating PCB layout modifications. The IRFSL3306PBF provides superior electrical performance with higher voltage rating (60V vs 55V), increased continuous drain current (120A vs 75A), and improved on-state resistance (4.2 mOhm vs 6.5 mOhm). The IRFSL3306PBF maintains active product status with ROHS3 compliance and unlimited moisture sensitivity level (MSL 1), ensuring long-term availability and supply chain stability.
FDP038AN06A0 Selection: This substitute is applicable when package constraints permit TO-220-3 configuration. The FDP038AN06A0 exceeds electrical requirements with 60V rating and 80A continuous drain current. Superior on-state resistance (3.8 mOhm) and higher power dissipation capability (310W) provide enhanced thermal performance. However, the different package footprint (TO-220-3 vs TO-262-3) requires PCB redesign. This device is suitable for applications where thermal management is prioritized and board space permits larger package dimensions.
Compliance Verification: Both substitute parts maintain ROHS3 compliance and REACH unaffected status, matching the original IRF3205ZLPBF regulatory requirements. Operating temperature range (-55°C to 175°C TJ) is identical across all three devices.
Frequently Asked Questions (FAQ)
Q: Can IRFSL3306PBF directly replace IRF3205ZLPBF without PCB modifications?
A: Yes. Both devices use identical TO-262-3 package with long leads configuration. Pin assignments and lead spacing are compatible, allowing direct socket substitution without PCB layout changes.
Q: What are the key electrical differences between IRF3205ZLPBF and IRFSL3306PBF?
A: The IRFSL3306PBF provides higher voltage rating (60V vs 55V), increased current capacity (120A vs 75A), lower on-state resistance (4.2 mOhm vs 6.5 mOhm), and greater power dissipation capability (230W vs 170W). These enhancements maintain backward compatibility while improving performance margins.
Q: Is FDP038AN06A0 a pin-compatible substitute?
A: No. FDP038AN06A0 uses TO-220-3 package while IRF3205ZLPBF uses TO-262-3 package. Pin configurations differ, requiring PCB redesign and new footprint layout. This substitute is suitable only when board redesign is feasible.
Q: What is the significance of the obsolete product status for IRF3205ZLPBF?
A: Obsolete status indicates the manufacturer has discontinued production. Substitute parts with active product status (IRFSL3306PBF and FDP038AN06A0) ensure ongoing availability, technical support, and supply chain continuity for new designs and production runs.
Q: Are all three devices RoHS compliant?
A: Yes. IRF3205ZLPBF, IRFSL3306PBF, and FDP038AN06A0 are all ROHS3 compliant with REACH unaffected status, meeting environmental and regulatory requirements.
Q: How do gate charge specifications affect circuit design?
A: Gate charge (Qg) determines the energy required to switch the MOSFET. IRF3205ZLPBF requires 110 nC, IRFSL3306PBF requires 120 nC, and FDP038AN06A0 requires 124 nC at 10V. Higher gate charge may require increased gate driver capability but remains within typical driver specifications for these voltage classes.
Q: What thermal considerations apply when selecting between TO-262 and TO-220 packages?
A: TO-220-3 package (FDP038AN06A0) provides superior thermal dissipation due to larger lead frame and mounting surface. TO-262-3 package (IRF3205ZLPBF and IRFSL3306PBF) offers compact form factor. Selection depends on application thermal requirements and available board space.
Q: Can these devices operate at the full ±20V gate voltage specification?
A: Yes. All three devices specify maximum gate voltage (Vgs Max) of ±20V, supporting standard gate driver circuits with positive and negative voltage supplies for enhanced switching performance and noise immunity.
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