IRF3205Z N-Channel 55V 75A MOSFET Equivalent & Substitute Parts

Part Overview

The IRF3205Z is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 55V drain-to-source voltage and 75A continuous drain current in a Through Hole TO-220AB package. This device is classified as Obsolete, indicating it is no longer in active production. The IRF3205Z belongs to the HEXFET® series and is designed for power switching applications requiring high current handling capability at moderate voltage levels.

Due to its obsolete status, component sourcing for new designs and production restocking requires identification of equivalent or substitute parts that maintain electrical and mechanical compatibility. Substitute parts must satisfy the core electrical parameters: 55V minimum drain-to-source voltage rating, 75A minimum continuous drain current capability, and Through Hole TO-220AB or compatible package configuration.

Key Parameters

Parameter	Value	Unit	Condition
Drain-to-Source Voltage (Vdss)	55	V	Maximum Rating
Continuous Drain Current (Id)	75	A	@ 25°C (Tc)
On-State Resistance (Rds On)	6.5	mOhm	@ 66A, 10V Vgs
Gate Threshold Voltage (Vgs(th))	4	V	@ 250µA Id
Gate Charge (Qg)	110	nC	@ 10V Vgs
Power Dissipation (Max)	170	W	@ Tc
Operating Temperature Range	-55 to 175	°C	TJ
Package Type	TO-220AB	—	Through Hole
FET Technology	MOSFET (Metal Oxide)	—	N-Channel

Substitute Part Grouping Explanation

Substitute parts for the IRF3205Z are classified into three categories based on electrical and mechanical compatibility:

Direct Equivalents (Identical Electrical Parameters) Direct equivalents maintain all critical electrical specifications: 55V Vdss, 75A Id, 6.5mOhm Rds On, and Through Hole TO-220AB package. These parts are pin-compatible and require no circuit modifications. Substitution is based on matching Vdss, Id, Rds On, Vgs(th), and package configuration.

Manufacturer Recommended Upgrades (Enhanced Performance) Manufacturer recommended parts exceed the IRF3205Z specifications in one or more parameters while maintaining backward compatibility. These parts provide improved performance characteristics such as higher current ratings, lower on-state resistance, or increased power dissipation capability. Substitution is permitted when the application can tolerate enhanced specifications without adverse effects.

Parametric Equivalents (Same Electrical Class, Different Status) Parametric equivalents match the electrical specifications of the IRF3205Z but carry different product status designations (Not For New Designs, Obsolete, or Active). These parts are electrically interchangeable but may have different availability or lifecycle support.

Key Substitution Criteria:

Drain-to-Source Voltage (Vdss): Minimum 55V
Continuous Drain Current (Id): Minimum 75A @ 25°C
Gate Threshold Voltage (Vgs(th)): 4V ± tolerance
Package: Through Hole TO-220AB or TO-220-3 compatible
Operating Temperature: -55°C to 175°C minimum
Technology: N-Channel MOSFET (Metal Oxide)

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id (A)	Rds On (mOhm)	Vgs(th) (V)	Qg (nC)	Package	Status
IRF3205Z	Infineon	55	75	6.5	4	110	TO-220AB	Obsolete
IRF3205ZPBF	Infineon	55	75	6.5	4	110	TO-220AB	Active
AUIRF3205Z	Infineon	55	75	6.5	4	110	TO-220AB	Not For New Designs
IRF3205ZPBFAKSA1	Infineon	55	75	6.5	4	110	TO-220-3	Active
IRFB3306PBF	Infineon	60	120	4.2	4	120	TO-220AB	Active
STP80NF55-06	STMicroelectronics	55	80	6.5	4	189	TO-220	Active
BUK9608-55B,118	Nexperia	55	75	7	2	45	D2PAK	Active
HUF75344P3	onsemi	55	75	8	4	210	TO-220-3	Active
HUF75345P3	onsemi	55	75	7	4	275	TO-220-3	Active
PHP191NQ06LT,127	Nexperia	55	75	3.7	2	95.6	TO-220AB	Obsolete
STP60NF06L	STMicroelectronics	60	60	14	1	66	TO-220	Active

Engineering Selection Recommendations

Primary Recommendation: IRF3205ZPBF

The IRF3205ZPBF is the direct equivalent replacement for the obsolete IRF3205Z. This part is manufactured by Infineon Technologies and maintains identical electrical specifications: 55V Vdss, 75A Id, 6.5mOhm Rds On, and 110nC gate charge. The IRF3205ZPBF is classified as Active product status, ensuring long-term availability and supply chain stability. RoHS3 compliance and REACH unaffected status confirm environmental and regulatory conformance. Packaging is supplied in Tube format with 15,365 pieces in current inventory. This part requires no circuit modifications and provides direct pin-compatible substitution.

Secondary Recommendation: HUF75344P3 or HUF75345P3

The HUF75344P3 and HUF75345P3 are manufactured by onsemi under the UltraFET™ series. Both parts maintain 55V Vdss and 75A Id ratings with TO-220-3 package compatibility. The HUF75344P3 features 8mOhm Rds On and 285W power dissipation, while the HUF75345P3 provides 7mOhm Rds On and 325W power dissipation. Both are Active status products with RoHS3 compliance. These parts are suitable for applications where slightly higher on-state resistance is acceptable in exchange for improved thermal performance and established supply availability.

Alternative for Enhanced Performance: IRFB3306PBF

The IRFB3306PBF is a manufacturer-recommended upgrade offering 60V Vdss and 120A Id with 4.2mOhm Rds On. This part provides superior current handling and reduced on-state resistance compared to the IRF3205Z. The IRFB3306PBF is suitable for applications requiring higher current capacity or lower power dissipation. Active product status and RoHS3 compliance confirm production support. Circuit design review is required to confirm compatibility with the higher voltage rating and enhanced specifications.

Package Consideration: BUK9608-55B,118

The BUK9608-55B,118 manufactured by Nexperia maintains 55V Vdss and 75A Id specifications but uses a Surface Mount D2PAK package instead of Through Hole TO-220AB. This part is suitable only for applications with PCB layout designed for surface mount components. AEC-Q101 automotive qualification and Active status provide production support. This part is not recommended for direct replacement in existing Through Hole designs without PCB redesign.

Not Recommended: STP60NF06L

The STP60NF06L is not suitable as a substitute. Although rated for 60V Vdss, the continuous drain current is limited to 60A, which falls below the 75A requirement of the IRF3205Z. This part does not meet the minimum current specification and will result in thermal stress and potential device failure in applications designed for 75A operation.

Frequently Asked Questions (FAQ)

Q1: Can IRF3205ZPBF directly replace IRF3205Z without any circuit modifications?

A: Yes. The IRF3205ZPBF is a direct electrical and mechanical equivalent. All electrical parameters are identical: 55V Vdss, 75A Id, 6.5mOhm Rds On, 4V Vgs(th), and 110nC gate charge. The TO-220AB package pinout is identical. No circuit modifications are required. The only difference is product status: IRF3205ZPBF is Active while IRF3205Z is Obsolete.

Q2: What is the difference between TO-220AB and TO-220-3 packages?

A: TO-220AB and TO-220-3 are equivalent package designations for the same physical form factor. Both refer to a three-lead Through Hole package with identical pin spacing and mounting hole configuration. Parts specified as TO-220AB or TO-220-3 are mechanically and electrically interchangeable in PCB designs.

Q3: Why is the IRFB3306PBF listed as a manufacturer-recommended upgrade?

A: The IRFB3306PBF exceeds the IRF3205Z specifications in three parameters: 60V Vdss (versus 55V), 120A Id (versus 75A), and 4.2mOhm Rds On (versus 6.5mOhm). These enhancements provide higher current capacity and lower power dissipation. The part is backward compatible because the higher voltage rating and improved performance do not create incompatibility with circuits designed for the IRF3205Z. However, circuit design review is recommended to confirm the application benefits from these enhancements.

Q4: Can HUF75344P3 be used as a direct replacement for IRF3205Z?

A: The HUF75344P3 is electrically compatible with identical 55V Vdss and 75A Id ratings. However, the on-state resistance is 8mOhm compared to 6.5mOhm for the IRF3205Z, resulting in approximately 23% higher conduction losses. The gate charge is 210nC versus 110nC, requiring higher gate drive energy. The TO-220-3 package is mechanically compatible. Substitution is acceptable if the application can tolerate the increased power dissipation and gate drive requirements.

Q5: Is BUK9608-55B,118 suitable for Through Hole PCB designs?

A: No. The BUK9608-55B,118 uses a Surface Mount D2PAK package, which is not compatible with Through Hole PCB designs. This part requires PCB redesign with surface mount pads and reflow soldering. It is not recommended for direct replacement in existing Through Hole applications.

Q6: What does "Not For New Designs" status mean for AUIRF3205Z?

A: "Not For New Designs" indicates that Infineon Technologies no longer recommends this part for new product development. While the AUIRF3205Z is electrically identical to the IRF3205Z and remains available in inventory (58,100 pieces), the manufacturer has designated it for legacy support only. For new designs, IRF3205ZPBF (Active status) is the recommended choice.

Q7: Why is STP60NF06L not recommended as a substitute?

A: The STP60NF06L is rated for only 60A continuous drain current, which is below the 75A requirement of the IRF3205Z. Using this part in a 75A application will cause the device to operate above its rated current, resulting in excessive junction temperature, reduced device lifetime, and potential thermal runaway. The part does not meet the minimum electrical specification.

Q8: Are all substitute parts RoHS3 compliant?

A: All recommended substitute parts listed (IRF3205ZPBF, AUIRF3205Z, IRF3205ZPBFAKSA1, IRFB3306PBF, STP80NF55-06, BUK9608-55B,118, HUF75344P3, HUF75345P3, and PHP191NQ06LT,127) are RoHS3 compliant. RoHS3 compliance confirms that these parts meet the Restriction of Hazardous Substances directive and are suitable for applications with environmental compliance requirements.

Q9: What is the significance of gate charge (Qg) differences between substitute parts?

A: Gate charge determines the energy required to switch the MOSFET on and off. The IRF3205Z requires 110nC at 10V Vgs. Substitute parts with higher gate charge (such as HUF75344P3 at 210nC) require more gate drive energy and may result in slower switching speed if the gate driver has limited current capability. Parts with lower gate charge (such as BUK9608-55B,118 at 45nC) switch faster and require less gate drive energy. Gate charge differences are significant only in high-frequency switching applications; for DC or low-frequency switching, the difference is negligible.

Q10: Can multiple substitute parts be used interchangeably in the same design?

A: No. While IRF3205ZPBF, AUIRF3205Z, and IRF3205ZPBFAKSA1 are electrically identical and can be used interchangeably, other substitute parts (HUF75344P3, HUF75345P3, IRFB3306PBF, STP80NF55-06) have different electrical characteristics. Using different parts in the same circuit may result in unbalanced current sharing, thermal stress, and reliability issues. A single part number should be selected for production designs to ensure consistent performance and thermal management.

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