IRF3007SPBF Equivalent & Substitute Parts

Part Overview

The IRF3007SPBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 75V drain-to-source voltage with 62A continuous drain current at 25°C. This device is housed in a D2PAK (TO-263-3) surface mount package and is part of the HEXFET® series. The IRF3007SPBF is discontinued at DiGi Electronics, making equivalent and substitute parts necessary for ongoing design support and procurement.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	75	V
Continuous Drain Current (Id) @ 25°C	62	A
Rds On (Max) @ 48A, 10V	12.6	mOhm
Gate Charge (Qg) @ 10V	130	nC
Power Dissipation (Max)	120	W
Operating Temperature Range	-55 to 175	°C
Package Type	D2PAK (TO-263-3)	—
Mounting Type	Surface Mount	—

Substitute Part Grouping Explanation

Substitution of the IRF3007SPBF is determined by the following critical parameters:

Voltage Rating (Vdss): The substitute must support the same or higher drain-to-source voltage. The IRF3007SPBF operates at 75V; substitutes rated at 75V, 80V, or 100V are acceptable.

Current Rating (Id): The substitute must support equal or greater continuous drain current at 25°C. The IRF3007SPBF is rated for 62A; substitutes must meet or exceed this specification.

On-Resistance (Rds On): The substitute should maintain comparable on-resistance characteristics to ensure similar power dissipation and thermal performance.

Package Compatibility: All substitutes must use the D2PAK (TO-263-3) surface mount package to ensure mechanical and electrical compatibility with existing PCB layouts.

Gate Charge (Qg): Lower gate charge values indicate faster switching characteristics and reduced drive circuit requirements.

Compliance and Status: All substitutes must maintain RoHS3 compliance and MSL 1 rating. Active product status is preferred for long-term availability.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Power Dissipation (W)	Package	Status
IRF3007SPBF	Infineon	75	62	12.6	130	120	D2PAK	Discontinued
IXTA70N075T2	IXYS	75	70	12	46	150	TO-263AA	Active
STB140NF75T4	STMicroelectronics	75	120	7.5	218	310	D2PAK	Active
PSMN012-80BS,118	Nexperia	80	74	11	43	148	D2PAK	Active
PSMN017-80BS,118	Nexperia	80	50	17	26	103	D2PAK	Active
IPB50N10S3L16ATMA1	Infineon	100	50	15.4	64	100	PG-TO263-3-2	Active

Engineering Selection Recommendations

Direct Voltage and Current Match (75V, ≥62A):

The IXTA70N075T2 from IXYS provides a 75V rating with 70A continuous drain current, exceeding the IRF3007SPBF specification. This device features lower on-resistance (12 mOhm vs. 12.6 mOhm) and significantly reduced gate charge (46 nC vs. 130 nC), resulting in improved switching performance and reduced drive circuit stress. The IXTA70N075T2 is active and maintains full RoHS3 and MSL 1 compliance. The TO-263AA package is mechanically compatible with D2PAK footprints.

The STB140NF75T4 from STMicroelectronics also maintains the 75V rating but provides substantially higher current capability (120A) and superior on-resistance (7.5 mOhm). This device is suitable for applications requiring higher current headroom or lower thermal dissipation. Gate charge is higher (218 nC), requiring consideration in drive circuit design. The STB140NF75T4 is active and fully compliant.

Higher Voltage Rating Substitutes (80V):

The PSMN012-80BS,118 from Nexperia provides 80V rating with 74A continuous current, closely matching the IRF3007SPBF performance envelope. On-resistance is 11 mOhm with gate charge of 43 nC. This device is active and maintains full compliance. The D2PAK package ensures direct PCB compatibility.

The PSMN017-80BS,118 from Nexperia provides 80V rating with 50A continuous current. This device features higher on-resistance (17 mOhm) and lower gate charge (26 nC), suitable for applications where switching speed is prioritized over current capacity.

Higher Voltage Rating Substitute (100V):

The IPB50N10S3L16ATMA1 from Infineon provides 100V rating with 50A continuous current. This device is suitable only for applications where the reduced current rating is acceptable. The PG-TO263-3-2 package is mechanically compatible with D2PAK layouts. This device is active and fully compliant.

Selection Criteria:

For direct replacement with minimal circuit redesign, select IXTA70N075T2 or PSMN012-80BS,118. For applications requiring higher current capacity, select STB140NF75T4. For applications with voltage margin requirements, select PSMN012-80BS,118 or IPB50N10S3L16ATMA1. All recommended substitutes are active products with confirmed RoHS3 compliance and MSL 1 rating.

Frequently Asked Questions (FAQ)

Q: Can the IXTA70N075T2 directly replace the IRF3007SPBF without PCB modifications?

A: The IXTA70N075T2 uses the TO-263AA package, which is mechanically compatible with D2PAK footprints. Pin configuration and lead spacing are identical. No PCB modifications are required. However, verify gate drive voltage compatibility in your circuit design, as gate charge differs (46 nC vs. 130 nC).

Q: What is the primary advantage of the STB140NF75T4 over the IRF3007SPBF?

A: The STB140NF75T4 provides significantly lower on-resistance (7.5 mOhm vs. 12.6 mOhm) and higher current capacity (120A vs. 62A). These characteristics reduce power dissipation and thermal stress in high-current applications. Higher gate charge (218 nC) requires verification of gate drive circuit capability.

Q: Are the Nexperia PSMN012-80BS,118 and PSMN017-80BS,118 interchangeable?

A: Both devices use D2PAK packaging and 80V rating, but they differ significantly in current rating (74A vs. 50A) and on-resistance (11 mOhm vs. 17 mOhm). Selection depends on application current requirements. The PSMN012-80BS,118 is the closer match to IRF3007SPBF performance.

Q: Does the higher voltage rating (80V or 100V) of substitute parts affect circuit operation?

A: Higher voltage ratings do not negatively affect circuit operation when the actual operating voltage remains at or below 75V. The higher rating provides additional voltage margin and does not change switching characteristics or on-resistance at equivalent gate drive voltages.

Q: What is the significance of gate charge (Qg) differences between substitutes?

A: Gate charge determines the energy required to switch the MOSFET on and off. Lower gate charge (IXTA70N075T2 at 46 nC) reduces gate drive circuit stress and switching losses. Higher gate charge (STB140NF75T4 at 218 nC) requires more robust gate drive capability but does not prevent substitution if the drive circuit is adequate.

Q: Are all substitute parts RoHS3 compliant?

A: All substitute parts listed maintain RoHS3 compliance and MSL 1 (Unlimited) moisture sensitivity rating, matching the IRF3007SPBF specification. Compliance documentation is available from respective manufacturers.

Q: Which substitute offers the best thermal performance?

A: The STB140NF75T4 provides the lowest on-resistance (7.5 mOhm) and highest power dissipation rating (310W), resulting in superior thermal performance in high-current applications. The IXTA70N075T2 offers balanced thermal performance with lower gate charge.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message