IRF2907ZSPBF N-Channel MOSFET 75V 160A Equivalent & Substitute Parts

Part Overview

The IRF2907ZSPBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 75V drain-to-source voltage with 160A continuous drain current at 25°C. The device is housed in a D2PAK (TO-263-3) surface mount package and delivers 300W maximum power dissipation. This part is discontinued at DiGi Electronics, necessitating identification of functionally equivalent alternatives for ongoing design support and production requirements.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	75	V
Continuous Drain Current (Id) @ 25°C	160	A
On-State Resistance (Rds On) @ 75A, 10V	4.5	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	270	nC
Power Dissipation (Max)	300	W
Operating Temperature Range	-55 to 175	°C
Package Type	D2PAK (TO-263-3)	—
Mounting Type	Surface Mount	—

Substitute Part Grouping Explanation

Substitution of the IRF2907ZSPBF is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 75V
Continuous Drain Current (Id): Must equal or exceed 160A at 25°C
On-State Resistance (Rds On): Lower or equivalent values ensure thermal performance
Package Type: D2PAK (TO-263-3) surface mount for mechanical compatibility
Operating Temperature Range: -55°C to 175°C minimum

Substitution Categories:

Category A – Direct Equivalents (Vdss = 75V, Id ≥ 160A): Parts meeting or exceeding the original specifications with identical voltage rating and current capability.

Category B – Higher Voltage Alternatives (Vdss > 75V, Id ≥ 160A): Parts with elevated voltage ratings that maintain or exceed current specifications, suitable for applications with higher system voltage margins.

Category C – Reduced Current Alternatives (Vdss = 75V, Id < 160A): Parts with lower current ratings for applications where full 160A capability is not required, offering cost or thermal optimization.

Category D – Enhanced Performance (Vdss = 75V, Id > 160A): Parts exceeding original current specifications, providing design margin and thermal headroom.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Pd Max (W)	Package	Status
IRF2907ZSPBF	Infineon	75	160	4.5	270	300	D2PAK	Discontinued
IPB049NE7N3GATMA1	Infineon	75	80	4.9	68	150	D2PAK	Obsolete
IPB054N08N3GATMA1	Infineon	80	80	5.4	69	150	D2PAK	Active
IXTA180N10T	IXYS	100	180	6.4	151	480	TO-263AA	Active
BUK764R4-60E,118	Nexperia	60	100	4.5	82	234	D2PAK	Active
IXFA230N075T2-7	IXYS	75	230	4.2	178	480	TO-263-7	Active
IXTA230N075T2	IXYS	75	230	4.2	178	480	TO-263AA	Active
PSMN005-75B,118	Nexperia	75	75	5	165	230	D2PAK	Active
PSMN4R4-80BS,118	Nexperia	80	100	4.5	125	306	D2PAK	Active
STB140NF75T4	STMicroelectronics	75	120	7.5	218	310	D2PAK	Active
STB160N75F3	STMicroelectronics	75	120	4	85	330	D2PAK	Active

Engineering Selection Recommendations

Active Status Preference: Select substitute parts with Active product status to ensure long-term availability and manufacturing support. Parts marked Obsolete or Discontinued carry supply chain risk and should be avoided unless existing inventory is confirmed.

Voltage Rating Alignment: For applications operating at or near 75V system voltage, select parts with Vdss = 75V (IXTA230N075T2, IXTA230N075T2, PSMN005-75B,118, STB140NF75T4, STB160N75F3). For systems with higher voltage margins, parts rated 80V or 100V (IPB054N08N3GATMA1, PSMN4R4-80BS,118, IXTA180N10T) provide additional design headroom.

Current Capability Matching: The IRF2907ZSPBF delivers 160A continuous current. Direct equivalents maintaining this specification are IXTA180N10T (180A) and IXTA230N075T2 (230A). Both exceed the original current rating and are Active status. For reduced current applications below 160A, STB140NF75T4 (120A) and STB160N75F3 (120A) are suitable alternatives.

Thermal Performance: On-state resistance (Rds On) directly impacts power dissipation and junction temperature. Lower Rds On values reduce thermal load. STB160N75F3 (4.0 mOhm) and IXTA230N075T2 (4.2 mOhm) deliver superior thermal characteristics compared to the original 4.5 mOhm specification.

Package Compatibility: All recommended substitutes use D2PAK or TO-263AA surface mount packages, maintaining mechanical compatibility with existing PCB layouts. IXFA230N075T2-7 uses TO-263-7 package (7-lead variant) and requires PCB layout verification before selection.

Compliance and Certifications: All listed substitutes comply with RoHS3 and REACH requirements. BUK764R4-60E,118 carries AEC-Q101 automotive qualification, suitable for automotive applications.

Frequently Asked Questions (FAQ)

Q1: Can I use a substitute part with lower drain current than the original 160A?

A: Substitution with lower current ratings (such as STB140NF75T4 at 120A or PSMN005-75B,118 at 75A) is permissible only if the application circuit operates below the substitute part's rated current. Circuit analysis must confirm that peak and continuous current demands do not exceed the substitute device's specifications. Using an undersized device risks thermal runaway and premature failure.

Q2: What is the impact of selecting a higher voltage-rated MOSFET (80V or 100V) in place of the 75V original?

A: Higher voltage ratings (Vdss > 75V) increase the device's voltage margin and are electrically compatible with 75V system designs. However, higher voltage MOSFETs typically exhibit increased on-state resistance and input capacitance, which may affect switching speed and power efficiency. Circuit simulation is recommended to evaluate performance trade-offs.

Q3: Are D2PAK and TO-263AA packages mechanically interchangeable?

A: D2PAK and TO-263AA are both three-lead surface mount packages with identical pin pitch and thermal tab dimensions. They are mechanically and electrically interchangeable on standard PCB layouts. TO-263-7 (seven-lead variant) requires different PCB footprints and is not directly interchangeable.

Q4: Why are some substitute parts listed as Obsolete or Discontinued?

A: Obsolete and Discontinued parts carry supply chain risk and may become unavailable within 12 to 24 months. These parts are included for reference only if existing inventory is confirmed. Active status parts are recommended for new designs and ongoing production.

Q5: How do gate charge (Qg) differences affect circuit performance?

A: Gate charge determines the energy required to switch the MOSFET on and off. Lower Qg values (such as STB160N75F3 at 85 nC) reduce gate drive power and enable faster switching. Higher Qg values (such as IRF2907ZSPBF at 270 nC) require more gate drive energy but may offer improved noise immunity. Gate driver circuit capability must match the substitute part's Qg specification.

Q6: Which substitute offers the best thermal performance for high-power applications?

A: IXTA230N075T2 and IXTA180N10T deliver the highest power dissipation ratings (480W) and lowest on-state resistance values (4.2 mOhm and 6.4 mOhm respectively). These devices are suitable for applications requiring maximum thermal headroom. STB160N75F3 also provides excellent thermal performance (330W, 4.0 mOhm Rds On).

Q7: Can I use IPB054N08N3GATMA1 as a direct replacement despite its 80V rating?

A: IPB054N08N3GATMA1 is electrically compatible with 75V system designs due to its higher voltage rating. However, it delivers only 80A continuous current, which is insufficient for applications requiring the original 160A specification. This part is suitable only for reduced-current applications.

Q8: What certifications should I verify for automotive applications?

A: For automotive use, confirm AEC-Q101 qualification. BUK764R4-60E,118 carries this certification. Other parts listed do not explicitly state automotive qualification and require design review before automotive deployment.

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