IRF2907ZPBF N-Channel MOSFET 75V 160A Equivalent & Substitute Parts

Part Overview

The IRF2907ZPBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 75V drain-to-source voltage and 160A continuous drain current in a TO-220AB through-hole package. This device is classified as "Not For New Designs," indicating it has reached end-of-life status. The HEXFET® series component delivers 300W maximum power dissipation and operates across the temperature range of -55°C to 175°C. Identification of equivalent and substitute parts is necessary to support legacy system maintenance, design continuity, and procurement flexibility when the primary part becomes unavailable.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	75	V
Continuous Drain Current (Id) @ 25°C	160	A
On-State Resistance (Rds On) @ 75A, 10V	4.5	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	270	nC
Power Dissipation (Max)	300	W
Operating Temperature Range	-55 to 175	°C
Package Type	TO-220AB	—
Technology	MOSFET (Metal Oxide)	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the IRF2907ZPBF is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 75V
Continuous Drain Current (Id): Must equal or exceed 160A at 25°C
On-State Resistance (Rds On): Lower or equivalent values preferred for thermal performance
Package Type: TO-220AB or TO-220-3 (mechanically compatible through-hole packages)
Gate Drive Voltage: Compatible with 10V drive specification
Operating Temperature Range: Must support -55°C to 175°C minimum

Secondary Compatibility Factors:

Gate Charge (Qg): Lower values reduce switching losses
Input Capacitance (Ciss): Affects gate drive circuit design
Power Dissipation Rating: Higher ratings provide thermal margin
Product Status: Active status preferred; Last Time Buy acceptable; Obsolete status requires verification

Substitute parts are grouped into two categories: Direct Replacements (matching or exceeding all primary parameters) and Functional Alternatives (meeting voltage and current requirements with acceptable trade-offs in secondary parameters).

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Pd Max (W)	Package	Status
IRF2907ZPBF	Infineon	75	160	4.5	270	300	TO-220AB	Not For New Designs
IRFB3077PBF	Infineon	75	120	3.3	220	370	TO-220AB	Active
IRFB3207ZPBF	Infineon	75	120	4.1	170	300	TO-220AB	Active
CSD18532KCS	Texas Instruments	60	100	4.2	53	250	TO-220-3	Active
FDP047N08	onsemi	75	164	4.7	152	268	TO-220-3	Active
IXFP220N06T3	IXYS	60	220	4.0	136	440	TO-220-3	Last Time Buy
IXTP200N055T2	IXYS	55	200	4.2	109	360	TO-220-3	Active
PHP29N08T,127	NXP Semiconductors	75	27	50	19	88	TO-220AB	Active
PHP79NQ08LT,127	Nexperia USA Inc.	75	73	16	30	157	TO-220-3	Obsolete
MTP3055VL	onsemi	60	12	180	10	48	TO-220-3	Active
NDP6060L	onsemi	60	48	20	60	100	TO-220-3	Active

Engineering Selection Recommendations

Direct Replacement (Recommended for Primary Substitution):

The FDP047N08 (onsemi, PowerTrench® series) is the closest functional equivalent. It matches the 75V Vdss rating and delivers 164A continuous drain current, exceeding the IRF2907ZPBF requirement of 160A. The on-state resistance of 4.7mOhm is comparable to the original 4.5mOhm specification. The device is in Active product status, ensuring long-term availability. The TO-220-3 package is mechanically compatible with TO-220AB applications. Gate charge of 152nC is significantly lower than the original 270nC, reducing switching losses. Power dissipation rating of 268W is slightly lower than the original 300W; thermal analysis is required for high-power applications.

Secondary Replacement Options (Conditional Substitution):

The IXTP200N055T2 (IXYS, TrenchT2™ series) provides 200A continuous drain current at 55V Vdss. While the voltage rating is 20V lower than the original specification, this device is suitable for applications where the actual operating voltage does not exceed 55V. The 360W power dissipation rating provides thermal margin. Active product status ensures availability. Gate charge of 109nC is substantially lower than the original, improving switching performance.

The IRFB3077PBF (Infineon, HEXFET® series) maintains the same manufacturer lineage and 75V Vdss rating. However, the 120A continuous drain current is 25% below the IRF2907ZPBF specification. This device is suitable only for applications where the actual current requirement does not exceed 120A. The 3.3mOhm on-state resistance is superior to the original, and the 370W power dissipation rating provides thermal margin. Active product status ensures long-term availability.

Not Recommended for Direct Substitution:

The CSD18532KCS (Texas Instruments, NexFET™ series), IXFP220N06T3 (IXYS, HiperFET™ series), PHP29N08T,127 (NXP Semiconductors, TrenchMOS™ series), PHP79NQ08LT,127 (Nexperia, TrenchMOS™ series), MTP3055VL (onsemi), and NDP6060L (onsemi) do not meet the combined voltage and current requirements of the IRF2907ZPBF. These parts are listed as cross-references in the original part documentation but are not suitable as primary replacements due to insufficient current ratings or voltage derating.

All recommended substitute parts are ROHS3 compliant and REACH unaffected, matching the environmental compliance profile of the original device.

Frequently Asked Questions (FAQ)

Q1: Can the IRFB3077PBF replace the IRF2907ZPBF in all applications?

The IRFB3077PBF is suitable only for applications where the continuous drain current requirement does not exceed 120A. The IRF2907ZPBF is rated for 160A continuous drain current. If the application requires the full 160A capability, the IRFB3077PBF will not provide adequate current capacity. Verify actual circuit current requirements before substitution.

Q2: What is the difference between TO-220AB and TO-220-3 packages?

Both TO-220AB and TO-220-3 are through-hole packages with identical pin configurations and mechanical mounting footprints. The designations refer to different lead-forming specifications. Devices in either package type are mechanically interchangeable on standard TO-220 PCB layouts. Verify lead spacing and bend radius specifications with the device datasheet if custom mounting is required.

Q3: Why is the FDP047N08 recommended over the IRFB3207ZPBF?

The FDP047N08 delivers 164A continuous drain current, matching the IRF2907ZPBF requirement of 160A. The IRFB3207ZPBF is rated for only 120A continuous drain current, making it unsuitable for applications requiring the full current capacity. Both devices maintain 75V Vdss and TO-220 package compatibility, but the FDP047N08 provides superior current handling.

Q4: Can I use the IXTP200N055T2 if my circuit operates at 55V or below?

Yes, the IXTP200N055T2 is suitable for applications where the maximum operating voltage does not exceed 55V. The device delivers 200A continuous drain current, exceeding the IRF2907ZPBF requirement of 160A. However, if the circuit design requires 75V voltage headroom or operates at voltages between 55V and 75V, this device is not appropriate. Verify the actual maximum voltage stress in the application before substitution.

Q5: Why is the PHP79NQ08LT,127 listed as Obsolete?

The PHP79NQ08LT,127 is classified as Obsolete by the manufacturer, indicating it has reached end-of-life and is no longer in active production. While inventory may be available from distributors, long-term supply cannot be guaranteed. Active-status alternatives such as the FDP047N08 or IRFB3077PBF are preferred for new designs and long-term system support.

Q6: What is the significance of lower gate charge (Qg) in substitute parts?

Gate charge determines the energy required to switch the MOSFET on and off. Lower gate charge values reduce switching losses and allow faster switching transitions. Many substitute parts listed have significantly lower Qg values than the original IRF2907ZPBF (270nC). This generally improves efficiency and reduces heat generation, but requires verification that the gate drive circuit can supply the required current within the specified switching time window.

Q7: Are all substitute parts RoHS3 compliant?

Yes, all substitute parts listed in this document are RoHS3 compliant and REACH unaffected, matching the environmental compliance profile of the IRF2907ZPBF. Compliance certifications are provided in the detailed specifications for each part.

Q8: How do I determine if a substitute part is suitable for my application?

Verify the following parameters in order of priority: (1) Drain-to-Source Voltage (Vdss) must equal or exceed the maximum voltage stress in the circuit; (2) Continuous Drain Current (Id) must equal or exceed the maximum sustained current; (3) On-State Resistance (Rds On) and Power Dissipation (Pd) must be adequate for thermal management; (4) Package type must be mechanically compatible with the PCB layout; (5) Product status should be Active or Last Time Buy to ensure supply continuity. Consult the device datasheet and perform thermal analysis before final selection.

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