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IRF2907ZLPBF N-Channel MOSFET Equivalent & Substitute Parts
Part Overview
The IRF2907ZLPBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 75V drain-to-source voltage with 160A continuous drain current at 25°C. This device is housed in a TO-262 through-hole package and is designed for high-current switching applications with a maximum power dissipation of 300W. The IRF2907ZLPBF is classified as obsolete, making identification of equivalent and substitute parts essential for ongoing design support and procurement continuity.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Drain-to-Source Voltage (Vdss) | 75 | V |
| Continuous Drain Current (Id) @ 25°C | 160 | A (Tc) |
| On-State Resistance (Rds On) @ 75A, 10V | 4.5 | mOhm |
| Gate Threshold Voltage (Vgs(th)) @ 250µA | 4 | V |
| Gate Charge (Qg) @ 10V | 270 | nC |
| Power Dissipation (Max) | 300 | W (Tc) |
| Operating Temperature Range | -55 to 175 | °C (TJ) |
| Package Type | TO-262-3 | Through Hole |
Substitute Part Grouping Explanation
Substitution of the IRF2907ZLPBF is determined by strict equivalence in the following electrical and mechanical parameters:
Critical Matching Parameters:
- Drain-to-Source Voltage (Vdss): 75V
- Package Type: TO-262 through-hole configuration
- FET Technology: N-Channel MOSFET
- Operating Temperature Range: -55°C to 175°C
Allowable Variation Parameters:
- Continuous Drain Current (Id): Substitute parts must meet or exceed 160A specification
- On-State Resistance (Rds On): Lower or equal values are acceptable
- Gate Charge (Qg): Lower or equal values are acceptable
- Power Dissipation: 300W or greater is acceptable
The substitute parts listed below satisfy these criteria while maintaining functional compatibility in applications designed for the IRF2907ZLPBF.
Parameter Comparison
| Parameter | IRF2907ZLPBF (Main) | IRF2907ZPBF (Direct) | IRFSL3207ZPBF (Recommended) | Unit |
|---|---|---|---|---|
| Manufacturer | Infineon Technologies | International Rectifier | Infineon Technologies | — |
| Product Status | Obsolete | Active | Active | — |
| Vdss | 75 | 75 | 75 | V |
| Id @ 25°C | 160 | 160 | 120 | A (Tc) |
| Rds On @ 75A, 10V | 4.5 | — | 4.1 | mOhm |
| Vgs(th) @ Id | 4 @ 250µA | — | 4 @ 150µA | V |
| Gate Charge (Qg) @ 10V | 270 | — | 170 | nC |
| Power Dissipation (Max) | 300 | — | 300 | W (Tc) |
| Operating Temperature | -55 to 175 | — | -55 to 175 | °C (TJ) |
| Package | TO-262-3 | TO-262-3 | TO-262-3 | Through Hole |
| Moisture Sensitivity (MSL) | 1 (Unlimited) | — | 1 (Unlimited) | — |
| REACH Status | REACH Unaffected | REACH Unaffected | REACH Unaffected | — |
| ECCN | EAR99 | EAR99 | EAR99 | — |
Engineering Selection Recommendations
IRF2907ZPBF (Direct Substitute): This part is manufactured by International Rectifier and maintains active product status. It provides direct electrical and mechanical compatibility with the IRF2907ZLPBF, sharing identical voltage and current ratings. Selection of this substitute is appropriate when procurement from the original manufacturer is unavailable and active product support is required. Both parts carry identical REACH and ECCN classifications.
IRFSL3207ZPBF (Manufacturer-Recommended Substitute): This Infineon Technologies part is the manufacturer-recommended alternative, carrying active product status and ROHS3 compliance certification. While the continuous drain current rating is reduced to 120A (compared to 160A in the main part), the on-state resistance is improved to 4.1mOhm, and gate charge is reduced to 170nC. This substitute is suitable for applications where the 120A rating meets system requirements. The improved gate charge characteristics may provide benefits in switching speed and driver efficiency. This part is recommended for new designs and long-term procurement strategies due to its active status and compliance certifications.
Both substitutes maintain the 75V voltage rating, TO-262 package configuration, 300W power dissipation capability, and -55°C to 175°C operating temperature range required for functional equivalence.
Frequently Asked Questions (FAQ)
Q: Can the IRFSL3207ZPBF replace the IRF2907ZLPBF in all applications?
A: The IRFSL3207ZPBF is functionally equivalent for applications where the continuous drain current requirement does not exceed 120A. If your circuit design requires the full 160A capability of the IRF2907ZLPBF, the IRFSL3207ZPBF is not suitable. For applications operating at or below 120A, this substitute provides improved on-state resistance and reduced gate charge.
Q: What is the difference between IRF2907ZPBF and IRF2907ZLPBF?
A: Both parts share identical electrical specifications (75V, 160A, 4.5mOhm Rds On). The primary difference is manufacturer designation and product status. The IRF2907ZPBF is manufactured by International Rectifier and maintains active status, while the IRF2907ZLPBF is an Infineon Technologies part classified as obsolete.
Q: Are all three parts compatible with the same PCB layout?
A: Yes. All three parts use the TO-262-3 Long Leads package configuration with identical pin assignments and mechanical dimensions. PCB layouts designed for the IRF2907ZLPBF require no modification to accommodate either substitute part.
Q: Which substitute should I select for new product designs?
A: For new designs, the IRFSL3207ZPBF is recommended due to its active product status, ROHS3 compliance, and manufacturer support from Infineon Technologies. If your application requires the full 160A rating, the IRF2907ZPBF provides direct electrical equivalence with active availability.
Q: What are the compliance and regulatory implications of these substitutes?
A: All three parts carry identical REACH Unaffected status and EAR99 ECCN classification. The IRFSL3207ZPBF additionally carries ROHS3 compliance certification. Moisture sensitivity level is 1 (Unlimited) for both the main part and recommended substitute, indicating no special storage or handling requirements.
Q: How do the gate charge differences affect circuit performance?
A: The IRFSL3207ZPBF exhibits 170nC gate charge compared to 270nC in the IRF2907ZLPBF. Lower gate charge reduces the charge required to switch the device, potentially decreasing switching losses and allowing use of lower-current gate drivers. This characteristic is beneficial in high-frequency switching applications.
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