IRF2903ZPBF Equivalent & Substitute Parts Reference

Part Overview

The IRF2903ZPBF is an N-Channel MOSFET rated for 30 V, 75 A continuous drain current (Tc), with a maximum power dissipation of 290 W (Tc), provided in a TO-220AB through-hole package. This device belongs to the HEXFET® series and is characterized by a low maximum Rds On of 2.4 mOhm at 75A, 10V gate drive. As the IRF2903ZPBF is obsolete, it is necessary to identify substitute models with matching electrical and mechanical parameters for drop-in replacement in existing designs and maintenance scenarios.

Substiute Parts

IRF2903ZPBF

Infineon TechnologiesIn Stock: 4104IRF2903ZPBF Datasheet

Current PartRFQ

PSMN2R0-30PL,127

Nexperia USA Inc.In Stock: 10287PSMN2R0-30PL,127 Datasheet

MFR RecommendedRFQ

PSMN4R3-30PL,127

Nexperia USA Inc.In Stock: 5627PSMN4R3-30PL,127 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute selection for IRF2903ZPBF in the MOSFET category is strictly determined by the following allowed parameters: Drain to Source Voltage (Vdss), Current - Continuous Drain (Id), Rds On (Max), Gate threshold and maximum gate voltage, gate charge, power dissipation, operating temperature range, and physical package compatibility (TO-220-3/TO-220AB). Only substitute parts matching or exceeding these thresholds, with confirmed compliance status, are included.

Parameter Comparison

Engineering Selection Recommendations

The IRF2903ZPBF is obsolete and ROHS3 compliant, with REACH unaffected status. Substitutes PSMN2R0-30PL,127 and PSMN4R3-30PL,127 are also ROHS3 compliant, REACH unaffected, and occupy the same TO-220-3/TO-220AB package, allowing for direct substitution within the defined parameters for compliant and regulated applications.

Frequently Asked Questions (FAQ)

Q1: What criteria determine the substitution of IRF2903ZPBF in the MOSFET category?
A1: Substitution is determined by matching drain-to-source voltage (Vdss), continuous drain current (Id), Rds On (Max), Vgs(th) (Max), gate charge, power dissipation, operating temperature, and mechanical package type.

Q2: Are substitute MOSFETs compliant with RoHS and REACH?
A2: Substitute parts PSMN2R0-30PL,127 and PSMN4R3-30PL,127 are ROHS3 compliant and REACH unaffected, in alignment with the main part.

Q3: Is it necessary to match the package type for a substitute?
A3: Yes, substitutes listed use the TO-220-3 / TO-220AB package, ensuring compatibility with existing board layouts and mounting hardware.

Q4: Are operating temperature ratings consistent across all listed substitutes?
A4: All parts specified support an operating junction temperature range of -55°C to 175°C.

Q5: How do power dissipation ratings compare among these substitute MOSFETs?
A5: Substitute power dissipation ratings range from 103W to 211W (Tc), compared to 290W (Tc) for IRF2903ZPBF, within the parameters provided for the category.

Q6: Do substitute parts offer adequate electrical performance characteristics?
A6: All substitute MOSFETs maintain the required levels for voltage, current, Rds On, gate charge, and gate-source voltage, as strictly defined in the allowed parameters.