IRF2807ZSTRRPBF N-Channel 75V 75A MOSFET Equivalent & Substitute Parts

Part Overview

The IRF2807ZSTRRPBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 75V drain-to-source voltage and 75A continuous drain current in a D2PAK surface mount package. This device is classified as Obsolete, indicating it is no longer in active production. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing manufacturing requirements for applications utilizing this component.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	75	V
Continuous Drain Current (Id) @ 25°C	75	A
On-State Resistance (Rds On) @ 53A, 10V	9.4	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Power Dissipation (Max)	170	W
Operating Temperature Range	-55 to 175	°C
Package Type	D2PAK (TO-263-3)	—
Mounting Type	Surface Mount	—

Substitute Part Grouping Explanation

Substitution of the IRF2807ZSTRRPBF is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Substitute must equal or exceed 75V
Continuous Drain Current (Id): Substitute must equal or exceed 75A at 25°C
Package Type: D2PAK (TO-263-3) surface mount configuration
Operating Temperature Range: -55°C to 175°C
Gate Drive Voltage: 10V nominal

Secondary Compatibility Parameters:

On-State Resistance (Rds On): Lower or equivalent values ensure thermal performance
Gate Threshold Voltage (Vgs(th)): Compatibility with existing gate drive circuits
Power Dissipation: Thermal management capability in target application

Substitute parts are grouped into two categories: direct equivalents from Infineon Technologies and cross-manufacturer alternatives from onsemi, Nexperia USA Inc., and STMicroelectronics that meet or exceed the electrical specifications of the original part.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Vgs(th) (V)	Power Diss. (W)	Package	Status
IRF2807ZSTRRPBF	Infineon	75	75	9.4	4	170	D2PAK	Obsolete
IRF2807ZSTRLPBF	Infineon	75	75	9.4	4	170	D2PAK	Not For New Designs
HUF75545S3ST	onsemi	80	75	10	4	270	D2PAK	Active
PSMN012-80BS,118	Nexperia USA Inc.	80	74	11	4	148	D2PAK	Active
PSMN8R7-80BS,118	Nexperia USA Inc.	80	90	8.7	4	170	D2PAK	Active
STB140NF55T4	STMicroelectronics	55	80	8	4	300	D2PAK	Active
STB140NF75T4	STMicroelectronics	75	120	7.5	4	310	D2PAK	Active
STB75NF75LT4	STMicroelectronics	75	75	11	2.5	300	D2PAK	Active
STB75NF75T4	STMicroelectronics	75	80	11	4	300	D2PAK	Active
STB85NF55T4	STMicroelectronics	55	80	8	4	300	D2PAK	Active

Engineering Selection Recommendations

Tier 1 - Direct Infineon Equivalent: IRF2807ZSTRLPBF is the direct equivalent from Infineon Technologies with identical electrical specifications. This part carries "Not For New Designs" status but maintains full compatibility with the original IRF2807ZSTRRPBF. Selection of this part is appropriate for replacement in existing designs or where Infineon ecosystem integration is required.

Tier 2 - Active Production Alternatives (75V Rating): STB140NF75T4 and STB75NF75T4 from STMicroelectronics provide 75V rating matching the original specification. STB140NF75T4 offers enhanced current capability (120A) and superior power dissipation (310W), suitable for applications requiring thermal headroom. STB75NF75T4 maintains the 75A current rating with improved thermal performance (300W). Both parts carry Active product status and ROHS3 compliance.

Tier 3 - Active Production Alternatives (80V Rating): HUF75545S3ST (onsemi), PSMN012-80BS,118, and PSMN8R7-80BS,118 (Nexperia USA Inc.) provide 80V rating, exceeding the original 75V specification. These parts are suitable for applications where voltage margin is acceptable. PSMN8R7-80BS,118 offers the lowest on-state resistance (8.7 mOhm) and highest current rating (90A), providing superior performance characteristics. All three parts carry Active status and ROHS3 compliance.

Tier 4 - Lower Voltage Alternatives (55V Rating): STB140NF55T4 and STB85NF55T4 from STMicroelectronics provide 55V rating. These parts are suitable only for applications where the maximum operating voltage does not exceed 55V. Both offer superior thermal performance (300W) and are in Active production status.

All substitute parts maintain D2PAK surface mount packaging, -55°C to 175°C operating temperature range, and ±20V gate voltage rating, ensuring mechanical and thermal compatibility with the original design.

Frequently Asked Questions (FAQ)

Q1: Can IRF2807ZSTRLPBF directly replace IRF2807ZSTRRPBF? A: Yes. IRF2807ZSTRLPBF is the direct Infineon equivalent with identical electrical specifications (75V, 75A, 9.4 mOhm Rds On, 170W power dissipation). The difference is packaging format (Digi-Reel vs. standard reel) and product status (Not For New Designs). Electrical and thermal performance are equivalent.

Q2: What is the key difference between 75V and 80V rated substitutes? A: The 80V-rated parts (HUF75545S3ST, PSMN012-80BS,118, PSMN8R7-80BS,118) provide higher voltage margin above the 75V specification. These are suitable for applications where transient overvoltage protection is beneficial. The 75V-rated substitutes (STB140NF75T4, STB75NF75T4) maintain exact voltage specification matching.

Q3: Which substitute offers the best thermal performance? A: STB140NF75T4 and STB75NF75T4 from STMicroelectronics offer the highest power dissipation ratings (310W and 300W respectively), compared to the original 170W. These parts are recommended for applications requiring enhanced thermal management or higher power density.

Q4: Are all substitute parts RoHS3 compliant? A: Yes. All substitute parts listed carry RoHS3 compliance certification. The original IRF2807ZSTRRPBF does not specify RoHS status, but all active production alternatives meet current RoHS3 requirements.

Q5: Can I use a 55V-rated part in place of the 75V original? A: No. STB140NF55T4 and STB85NF55T4 are rated for maximum 55V drain-to-source voltage. These parts are suitable only for applications where the maximum operating voltage does not exceed 55V. Using a lower-voltage part in a 75V application creates risk of device failure.

Q6: What is the significance of on-state resistance (Rds On) differences? A: Lower Rds On values reduce conduction losses and heat generation. PSMN8R7-80BS,118 (8.7 mOhm) and STB140NF55T4 (8 mOhm) offer lower losses than the original 9.4 mOhm specification. Higher Rds On values (11 mOhm in STB75NF75LT4 and STB75NF75T4) result in slightly higher conduction losses but remain within acceptable operating parameters.

Q7: Does gate threshold voltage (Vgs(th)) affect substitution compatibility? A: Gate threshold voltage affects gate drive circuit design. The original part specifies 4V @ 250µA. Most substitutes maintain this specification. STB75NF75LT4 specifies 2.5V @ 250µA, requiring verification that existing gate drive circuits can reliably operate at this lower threshold. Consult gate driver datasheets for compatibility confirmation.

Q8: Are all substitute parts available in D2PAK packaging? A: Yes. All substitute parts listed are supplied in D2PAK (TO-263-3) surface mount package, ensuring mechanical compatibility with the original PCB layout and thermal interface design.

Q9: Which substitute is recommended for new designs? A: For new designs, STB140NF75T4 or STB75NF75T4 from STMicroelectronics are recommended. Both carry Active product status, ROHS3 compliance, superior thermal performance (300W–310W), and are supported by established supply chains. These parts provide design longevity and manufacturing continuity.

Q10: What is the difference between "Obsolete" and "Not For New Designs" status? A: Obsolete parts are no longer manufactured and available only from existing inventory. "Not For New Designs" parts are still manufactured but not recommended for new applications. IRF2807ZSTRLPBF carries "Not For New Designs" status, indicating continued availability but manufacturer recommendation against new design integration.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message