IRF2807ZSTRR N-Channel 75V 75A MOSFET Equivalent & Substitute Parts

Part Overview

The IRF2807ZSTRR is an N-Channel metal oxide semiconductor field-effect transistor (MOSFET) manufactured by Vishay Siliconix, rated for 75V drain-to-source voltage and 75A continuous drain current in a surface mount D2PAK (TO-263) package. This device is discontinued at DiGi Electronics, necessitating identification of functionally equivalent alternatives from active product lines. The part operates across a temperature range of -55°C to 175°C and dissipates up to 170W at the case temperature. Equivalent substitutes must maintain compatibility with the D2PAK package footprint and preserve critical electrical characteristics for direct board-level replacement.

Substiute Parts

IRF2807ZSTRR
Vishay SiliconixIn Stock: 1117IRF2807ZSTRR Datasheet
IRF2807ZSTRR
Current Part
BUK9609-75A,118
NXP USA Inc.In Stock: 1759BUK9609-75A,118 Datasheet
BUK9609-75A,118
MFR Recommended
FDB088N08
onsemiIn Stock: 24920FDB088N08 Datasheet
FDB088N08
MFR Recommended
HUF75545S3ST
onsemiIn Stock: 4639HUF75545S3ST Datasheet
HUF75545S3ST
MFR Recommended
IPB80N06S209ATMA2
Infineon TechnologiesIn Stock: 1888IPB80N06S209ATMA2 Datasheet
IPB80N06S209ATMA2
MFR Recommended
IXTA90N075T2
IXYSIn Stock: 3416IXTA90N075T2 Datasheet
IXTA90N075T2
MFR Recommended
PSMN008-75B,118
Nexperia USA Inc.In Stock: 6579PSMN008-75B,118 Datasheet
PSMN008-75B,118
MFR Recommended
PSMN012-80BS,118
Nexperia USA Inc.In Stock: 6069PSMN012-80BS,118 Datasheet
PSMN012-80BS,118
MFR Recommended
PSMN8R7-80BS,118
Nexperia USA Inc.In Stock: 6288PSMN8R7-80BS,118 Datasheet
PSMN8R7-80BS,118
MFR Recommended
STB140NF55T4
STMicroelectronicsIn Stock: 15448STB140NF55T4 Datasheet
STB140NF55T4
MFR Recommended
STB140NF75T4
STMicroelectronicsIn Stock: 2807STB140NF75T4 Datasheet
STB140NF75T4
MFR Recommended
STB75NF75LT4
STMicroelectronicsIn Stock: 5850STB75NF75LT4 Datasheet
STB75NF75LT4
MFR Recommended
STB75NF75T4
STMicroelectronicsIn Stock: 43499STB75NF75T4 Datasheet
STB75NF75T4
MFR Recommended
STB85NF55T4
STMicroelectronicsIn Stock: 29424STB85NF55T4 Datasheet
STB85NF55T4
MFR Recommended
IRF2807ZSTRLPBF
Infineon TechnologiesIn Stock: 16964IRF2807ZSTRLPBF Datasheet
IRF2807ZSTRLPBF
Parametric Equivalent

Key Parameters

Parameter IRF2807ZSTRR Value Unit
FET Type N-Channel
Drain-to-Source Voltage (Vdss) 75 V
Continuous Drain Current (Id) @ 25°C 75 A
On-State Resistance (Rds On) @ 53A, 10V 9.4 mOhm
Gate-Source Threshold Voltage (Vgs(th)) @ 250µA 4 V
Gate Charge (Qg) @ 10V 110 nC
Input Capacitance (Ciss) @ 25V 3270 pF
Power Dissipation (Max) 170 W
Operating Temperature Range -55 to 175 °C
Package Type TO-263-3 (D2PAK)
Mounting Type Surface Mount

Substitute Part Grouping Explanation

Substitution of the IRF2807ZSTRR is determined by the following critical parameters:

Primary Matching Criteria:

  • N-Channel MOSFET technology
  • Drain-to-source voltage rating of 75V or higher
  • Continuous drain current rating of 75A or higher
  • Surface mount D2PAK (TO-263) package configuration
  • Gate-source threshold voltage compatible with 10V drive voltage
  • Operating temperature range of -55°C to 175°C minimum

Secondary Compatibility Factors:

  • On-state resistance (Rds On) at specified gate voltage and current
  • Gate charge characteristics for switching performance
  • Input capacitance for circuit timing considerations
  • Power dissipation capability

Substitute parts are grouped into two categories: Direct Equivalents (matching 75V/75A specifications) and Enhanced Alternatives (higher voltage or current ratings that maintain backward compatibility with the original application requirements).

Parameter Comparison

Part Number Manufacturer Vdss (V) Id @ 25°C (A) Rds On (mOhm) Vgs(th) (V) Qg (nC) Ciss (pF) Power Diss. (W) Status
IRF2807ZSTRR Vishay Siliconix 75 75 9.4 4 110 3270 170 Discontinued
BUK9609-75A,118 NXP USA Inc. 75 75 8.5 2 8840 230 Active
FDB088N08 onsemi 75 120 8.8 4 118 6595 160 Active
HUF75545S3ST onsemi 80 75 10 4 235 3750 270 Active
IPB80N06S209ATMA2 Infineon Technologies 55 80 8.8 4 80 2360 190 Active
IXTA90N075T2 IXYS 75 90 10 4 54 3290 180 Active
PSMN008-75B,118 Nexperia USA Inc. 75 75 8.5 4 122.8 5260 230 Active
PSMN012-80BS,118 Nexperia USA Inc. 80 74 11 4 43 2782 148 Active
PSMN8R7-80BS,118 Nexperia USA Inc. 80 90 8.7 4 52 3346 170 Active
STB140NF55T4 STMicroelectronics 55 80 8 4 142 5300 300 Active
STB140NF75T4 STMicroelectronics 75 120 7.5 4 218 5000 310 Active

Engineering Selection Recommendations

Direct Equivalents (Recommended for Pin-Compatible Replacement):

The following parts maintain the 75V/75A specification envelope and are suitable for direct substitution in applications where the original IRF2807ZSTRR was specified:

  • PSMN008-75B,118 (Nexperia USA Inc.): Matches 75V/75A ratings with improved on-state resistance (8.5 mOhm vs. 9.4 mOhm). RoHS3 compliant. Active product status with 6490 units in stock.

  • BUK9609-75A,118 (NXP USA Inc.): Matches 75V/75A ratings with lower on-state resistance (8.5 mOhm). AEC-Q101 automotive qualified. Active product status with 1665 units in stock.

Enhanced Alternatives (Higher Current or Voltage Capability):

These parts exceed the original specifications and provide additional design margin:

  • FDB088N08 (onsemi): 75V/120A rating with 8.8 mOhm on-state resistance. RoHS3 compliant. PowerTrench® technology. 24879 units in stock.

  • STB140NF75T4 (STMicroelectronics): 75V/120A rating with superior on-state resistance (7.5 mOhm) and power dissipation (310W). RoHS3 compliant. STripFET™ III technology. 2749 units in stock.

  • PSMN8R7-80BS,118 (Nexperia USA Inc.): 80V/90A rating with 8.7 mOhm on-state resistance. RoHS3 compliant. 6265 units in stock.

Not Recommended for Direct Substitution:

  • IPB80N06S209ATMA2 (Infineon): 55V rating is below the 75V requirement of the original part.

  • STB140NF55T4 (STMicroelectronics): 55V rating is below the 75V requirement of the original part.

  • IXTA90N075T2 (IXYS): While 75V/90A rated, the higher on-state resistance (10 mOhm) and gate charge (54 nC) may impact circuit performance compared to lower-resistance alternatives.

  • PSMN012-80BS,118 (Nexperia USA Inc.): 80V/74A rating falls below the 75A continuous current requirement.

All recommended substitutes are RoHS3 compliant and operate across the -55°C to 175°C temperature range. All parts are packaged in D2PAK (TO-263) surface mount configuration.

Frequently Asked Questions (FAQ)

Q: Can I use a substitute part with a higher voltage rating than the original IRF2807ZSTRR?

A: Yes. Parts rated for 80V are suitable for applications designed for 75V operation. The higher voltage rating provides additional safety margin. Ensure the circuit design does not rely on specific voltage-dependent characteristics of the original part.

Q: What is the significance of on-state resistance (Rds On) when selecting a substitute?

A: On-state resistance directly affects power dissipation and heat generation. Lower Rds On values reduce losses and improve efficiency. The IRF2807ZSTRR specifies 9.4 mOhm at 53A/10V. Substitutes with equal or lower Rds On values are preferred for thermal performance.

Q: Are all substitute parts compatible with the D2PAK footprint?

A: Yes. All listed substitutes use the TO-263-3 (D2PAK) package with identical pin configuration and mechanical dimensions. Direct board-level replacement is possible without PCB redesign.

Q: Why is the IRF2807ZSTRR discontinued?

A: The part is discontinued at DiGi Electronics. Equivalent active products from other manufacturers provide superior performance characteristics, including lower on-state resistance, higher power dissipation ratings, and improved gate charge specifications.

Q: What is the difference between gate charge (Qg) specifications?

A: Gate charge represents the total charge required to switch the MOSFET from off to on state. Lower gate charge enables faster switching and reduces driver power requirements. The IRF2807ZSTRR specifies 110 nC at 10V. Substitutes with lower gate charge (such as IXTA90N075T2 at 54 nC) switch faster; those with higher gate charge (such as STB140NF75T4 at 218 nC) require more driver current.

Q: Can I use a part with higher continuous drain current than the original specification?

A: Yes. Parts rated for 90A or 120A continuous drain current are suitable for applications requiring 75A. The higher rating provides additional design margin and thermal headroom. No circuit modifications are required.

Q: What does RoHS3 compliance mean?

A: RoHS3 (Restriction of Hazardous Substances Directive 3) compliance indicates the part meets European environmental standards restricting lead, cadmium, mercury, and other hazardous materials. All recommended active substitutes are RoHS3 compliant.

Q: Is AEC-Q101 qualification important for my application?

A: AEC-Q101 qualification indicates the part meets automotive industry reliability standards. The BUK9609-75A,118 carries this qualification. If your application requires automotive-grade components, this part is preferred. Non-automotive applications do not require this certification.

Q: How do I determine which substitute is best for my circuit?

A: Evaluate based on: (1) voltage and current requirements—ensure ratings meet or exceed your application needs; (2) on-state resistance—lower values reduce power dissipation; (3) gate charge—lower values enable faster switching; (4) power dissipation capability—ensure thermal design accommodates the part's maximum rating; (5) product availability—verify stock levels for your procurement timeline.

Q: What is the difference between Tape & Reel (TR) and Cut Tape (CT) packaging?

A: Tape & Reel packaging is supplied on continuous reels for automated assembly lines. Cut Tape & Digi-Reel® packaging is supplied in smaller quantities on tape segments. Both formats use identical D2PAK components. Selection depends on production volume and assembly equipment compatibility.

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