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IRF2807ZSTRR N-Channel 75V 75A MOSFET Equivalent & Substitute Parts
Part Overview
The IRF2807ZSTRR is an N-Channel metal oxide semiconductor field-effect transistor (MOSFET) manufactured by Vishay Siliconix, rated for 75V drain-to-source voltage and 75A continuous drain current in a surface mount D2PAK (TO-263) package. This device is discontinued at DiGi Electronics, necessitating identification of functionally equivalent alternatives from active product lines. The part operates across a temperature range of -55°C to 175°C and dissipates up to 170W at the case temperature. Equivalent substitutes must maintain compatibility with the D2PAK package footprint and preserve critical electrical characteristics for direct board-level replacement.
Substiute Parts
Key Parameters
| Parameter | IRF2807ZSTRR Value | Unit |
|---|---|---|
| FET Type | N-Channel | — |
| Drain-to-Source Voltage (Vdss) | 75 | V |
| Continuous Drain Current (Id) @ 25°C | 75 | A |
| On-State Resistance (Rds On) @ 53A, 10V | 9.4 | mOhm |
| Gate-Source Threshold Voltage (Vgs(th)) @ 250µA | 4 | V |
| Gate Charge (Qg) @ 10V | 110 | nC |
| Input Capacitance (Ciss) @ 25V | 3270 | pF |
| Power Dissipation (Max) | 170 | W |
| Operating Temperature Range | -55 to 175 | °C |
| Package Type | TO-263-3 (D2PAK) | — |
| Mounting Type | Surface Mount | — |
Substitute Part Grouping Explanation
Substitution of the IRF2807ZSTRR is determined by the following critical parameters:
Primary Matching Criteria:
- N-Channel MOSFET technology
- Drain-to-source voltage rating of 75V or higher
- Continuous drain current rating of 75A or higher
- Surface mount D2PAK (TO-263) package configuration
- Gate-source threshold voltage compatible with 10V drive voltage
- Operating temperature range of -55°C to 175°C minimum
Secondary Compatibility Factors:
- On-state resistance (Rds On) at specified gate voltage and current
- Gate charge characteristics for switching performance
- Input capacitance for circuit timing considerations
- Power dissipation capability
Substitute parts are grouped into two categories: Direct Equivalents (matching 75V/75A specifications) and Enhanced Alternatives (higher voltage or current ratings that maintain backward compatibility with the original application requirements).
Parameter Comparison
| Part Number | Manufacturer | Vdss (V) | Id @ 25°C (A) | Rds On (mOhm) | Vgs(th) (V) | Qg (nC) | Ciss (pF) | Power Diss. (W) | Status |
|---|---|---|---|---|---|---|---|---|---|
| IRF2807ZSTRR | Vishay Siliconix | 75 | 75 | 9.4 | 4 | 110 | 3270 | 170 | Discontinued |
| BUK9609-75A,118 | NXP USA Inc. | 75 | 75 | 8.5 | 2 | — | 8840 | 230 | Active |
| FDB088N08 | onsemi | 75 | 120 | 8.8 | 4 | 118 | 6595 | 160 | Active |
| HUF75545S3ST | onsemi | 80 | 75 | 10 | 4 | 235 | 3750 | 270 | Active |
| IPB80N06S209ATMA2 | Infineon Technologies | 55 | 80 | 8.8 | 4 | 80 | 2360 | 190 | Active |
| IXTA90N075T2 | IXYS | 75 | 90 | 10 | 4 | 54 | 3290 | 180 | Active |
| PSMN008-75B,118 | Nexperia USA Inc. | 75 | 75 | 8.5 | 4 | 122.8 | 5260 | 230 | Active |
| PSMN012-80BS,118 | Nexperia USA Inc. | 80 | 74 | 11 | 4 | 43 | 2782 | 148 | Active |
| PSMN8R7-80BS,118 | Nexperia USA Inc. | 80 | 90 | 8.7 | 4 | 52 | 3346 | 170 | Active |
| STB140NF55T4 | STMicroelectronics | 55 | 80 | 8 | 4 | 142 | 5300 | 300 | Active |
| STB140NF75T4 | STMicroelectronics | 75 | 120 | 7.5 | 4 | 218 | 5000 | 310 | Active |
Engineering Selection Recommendations
Direct Equivalents (Recommended for Pin-Compatible Replacement):
The following parts maintain the 75V/75A specification envelope and are suitable for direct substitution in applications where the original IRF2807ZSTRR was specified:
-
PSMN008-75B,118 (Nexperia USA Inc.): Matches 75V/75A ratings with improved on-state resistance (8.5 mOhm vs. 9.4 mOhm). RoHS3 compliant. Active product status with 6490 units in stock.
-
BUK9609-75A,118 (NXP USA Inc.): Matches 75V/75A ratings with lower on-state resistance (8.5 mOhm). AEC-Q101 automotive qualified. Active product status with 1665 units in stock.
Enhanced Alternatives (Higher Current or Voltage Capability):
These parts exceed the original specifications and provide additional design margin:
-
FDB088N08 (onsemi): 75V/120A rating with 8.8 mOhm on-state resistance. RoHS3 compliant. PowerTrench® technology. 24879 units in stock.
-
STB140NF75T4 (STMicroelectronics): 75V/120A rating with superior on-state resistance (7.5 mOhm) and power dissipation (310W). RoHS3 compliant. STripFET™ III technology. 2749 units in stock.
-
PSMN8R7-80BS,118 (Nexperia USA Inc.): 80V/90A rating with 8.7 mOhm on-state resistance. RoHS3 compliant. 6265 units in stock.
Not Recommended for Direct Substitution:
-
IPB80N06S209ATMA2 (Infineon): 55V rating is below the 75V requirement of the original part.
-
STB140NF55T4 (STMicroelectronics): 55V rating is below the 75V requirement of the original part.
-
IXTA90N075T2 (IXYS): While 75V/90A rated, the higher on-state resistance (10 mOhm) and gate charge (54 nC) may impact circuit performance compared to lower-resistance alternatives.
-
PSMN012-80BS,118 (Nexperia USA Inc.): 80V/74A rating falls below the 75A continuous current requirement.
All recommended substitutes are RoHS3 compliant and operate across the -55°C to 175°C temperature range. All parts are packaged in D2PAK (TO-263) surface mount configuration.
Frequently Asked Questions (FAQ)
Q: Can I use a substitute part with a higher voltage rating than the original IRF2807ZSTRR?
A: Yes. Parts rated for 80V are suitable for applications designed for 75V operation. The higher voltage rating provides additional safety margin. Ensure the circuit design does not rely on specific voltage-dependent characteristics of the original part.
Q: What is the significance of on-state resistance (Rds On) when selecting a substitute?
A: On-state resistance directly affects power dissipation and heat generation. Lower Rds On values reduce losses and improve efficiency. The IRF2807ZSTRR specifies 9.4 mOhm at 53A/10V. Substitutes with equal or lower Rds On values are preferred for thermal performance.
Q: Are all substitute parts compatible with the D2PAK footprint?
A: Yes. All listed substitutes use the TO-263-3 (D2PAK) package with identical pin configuration and mechanical dimensions. Direct board-level replacement is possible without PCB redesign.
Q: Why is the IRF2807ZSTRR discontinued?
A: The part is discontinued at DiGi Electronics. Equivalent active products from other manufacturers provide superior performance characteristics, including lower on-state resistance, higher power dissipation ratings, and improved gate charge specifications.
Q: What is the difference between gate charge (Qg) specifications?
A: Gate charge represents the total charge required to switch the MOSFET from off to on state. Lower gate charge enables faster switching and reduces driver power requirements. The IRF2807ZSTRR specifies 110 nC at 10V. Substitutes with lower gate charge (such as IXTA90N075T2 at 54 nC) switch faster; those with higher gate charge (such as STB140NF75T4 at 218 nC) require more driver current.
Q: Can I use a part with higher continuous drain current than the original specification?
A: Yes. Parts rated for 90A or 120A continuous drain current are suitable for applications requiring 75A. The higher rating provides additional design margin and thermal headroom. No circuit modifications are required.
Q: What does RoHS3 compliance mean?
A: RoHS3 (Restriction of Hazardous Substances Directive 3) compliance indicates the part meets European environmental standards restricting lead, cadmium, mercury, and other hazardous materials. All recommended active substitutes are RoHS3 compliant.
Q: Is AEC-Q101 qualification important for my application?
A: AEC-Q101 qualification indicates the part meets automotive industry reliability standards. The BUK9609-75A,118 carries this qualification. If your application requires automotive-grade components, this part is preferred. Non-automotive applications do not require this certification.
Q: How do I determine which substitute is best for my circuit?
A: Evaluate based on: (1) voltage and current requirements—ensure ratings meet or exceed your application needs; (2) on-state resistance—lower values reduce power dissipation; (3) gate charge—lower values enable faster switching; (4) power dissipation capability—ensure thermal design accommodates the part's maximum rating; (5) product availability—verify stock levels for your procurement timeline.
Q: What is the difference between Tape & Reel (TR) and Cut Tape (CT) packaging?
A: Tape & Reel packaging is supplied on continuous reels for automated assembly lines. Cut Tape & Digi-Reel® packaging is supplied in smaller quantities on tape segments. Both formats use identical D2PAK components. Selection depends on production volume and assembly equipment compatibility.
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