IRF2807ZSTRLPBF N-Channel 75V 75A MOSFET Equivalent & Substitute Parts

Part Overview

The IRF2807ZSTRLPBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 75V drain-to-source voltage and 75A continuous drain current in the D2PAK surface mount package. This device belongs to the HEXFET® series and is classified as Not For New Designs, indicating it has been superseded in Infineon's product portfolio. Due to its obsolescence status, equivalent and substitute parts from active manufacturers are necessary for ongoing production, maintenance, and new application development requiring compatible electrical and mechanical characteristics.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	75	V
Continuous Drain Current (Id) @ 25°C	75	A (Tc)
On-State Resistance (Rds On) @ 53A, 10V	9.4	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	110	nC
Power Dissipation (Max)	170	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	D2PAK (TO-263-3)	Surface Mount
Gate Drive Voltage	10	V
Maximum Gate Voltage (Vgs)	±20	V

Substitute Part Grouping Explanation

Substitute parts for the IRF2807ZSTRLPBF are grouped based on strict electrical and mechanical compatibility criteria. The primary substitution parameters are:

Critical Matching Parameters:

Drain-to-Source Voltage (Vdss): 75V nominal rating
Continuous Drain Current (Id): 75A or higher at Tc
Package Type: D2PAK (TO-263-3) surface mount configuration
Operating Temperature Range: -55°C to 175°C minimum
Gate Drive Voltage: 10V standard drive capability
RoHS3 Compliance and MSL Level 1 (Unlimited)

Secondary Compatibility Parameters:

On-State Resistance (Rds On): Comparable performance at specified current and voltage
Gate Charge (Qg): Acceptable switching characteristics
Power Dissipation: Thermal capability for intended application

Substitutes are classified into two categories:

Category 1 - Direct Electrical Equivalents (75V, 75A nominal): Parts matching the exact voltage and current ratings with D2PAK packaging and active product status.

Category 2 - Functional Alternatives (75V rating with current variation): Parts with 75V Vdss rating but different current ratings (higher or lower), suitable when application requirements permit current derating or upgrading.

Category 3 - Voltage-Reduced Alternatives (55V rating): Parts with lower Vdss ratings (55V) that may substitute only in applications with reduced voltage requirements, not recommended for direct replacement in 75V-rated circuits.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ Tc (A)	Rds On (mOhm)	Qg (nC)	Pd Max (W)	Status	Package
IRF2807ZSTRLPBF	Infineon	75	75	9.4 @ 53A, 10V	110 @ 10V	170	Not For New Designs	D2PAK
FDB045AN08A0	onsemi	75	90	4.5 @ 80A, 10V	138 @ 10V	310	Active	D2PAK
HUF75545S3ST	onsemi	80	75	10 @ 75A, 10V	235 @ 20V	270	Active	D2PAK
PSMN012-80BS,118	Nexperia	80	74	11 @ 15A, 10V	43 @ 10V	148	Active	D2PAK
PSMN8R7-80BS,118	Nexperia	80	90	8.7 @ 10A, 10V	52 @ 10V	170	Active	D2PAK
STB140NF55T4	STMicroelectronics	55	80	8 @ 40A, 10V	142 @ 10V	300	Active	D2PAK
STB140NF75T4	STMicroelectronics	75	120	7.5 @ 70A, 10V	218 @ 10V	310	Active	D2PAK
STB75NF75LT4	STMicroelectronics	75	75	11 @ 37.5A, 10V	90 @ 5V	300	Active	D2PAK
STB75NF75T4	STMicroelectronics	75	80	11 @ 40A, 10V	160 @ 10V	300	Active	D2PAK
STB76NF75	STMicroelectronics	75	80	11 @ 40A, 10V	160 @ 10V	300	Active	D2PAK
BUK7610-55AL,118	Nexperia	55	75	10 @ 25A, 10V	124 @ 10V	300	Obsolete	D2PAK

Engineering Selection Recommendations

Primary Substitutes (Recommended for Direct Replacement):

STB75NF75LT4 (STMicroelectronics) and STB75NF75T4 (STMicroelectronics) are the preferred substitutes. Both maintain the 75V Vdss rating and 75A-80A continuous drain current specification. These devices are Active products with STripFET™ II technology, offering superior thermal performance (300W) compared to the original IRF2807ZSTRLPBF (170W). Both are RoHS3 compliant with MSL Level 1 rating and identical D2PAK packaging. STB75NF75LT4 provides lower gate charge (90 nC @ 5V) for faster switching applications.

Secondary Substitutes (Functional Equivalents with Higher Current Rating):

FDB045AN08A0 (onsemi) and PSMN8R7-80BS,118 (Nexperia) offer 75V-80V Vdss ratings with 90A continuous drain current capability. These parts provide current margin above the original 75A specification and are Active products. FDB045AN08A0 features superior on-state resistance (4.5 mOhm) and higher power dissipation (310W). PSMN8R7-80BS,118 maintains 170W power dissipation matching the original part. Both are suitable for applications where higher current capacity is beneficial or where thermal derating is acceptable.

Voltage-Elevated Substitute (80V Rating):

HUF75545S3ST (onsemi) provides 80V Vdss with 75A continuous drain current, offering voltage margin above the 75V specification. This UltraFET™ series device is Active and RoHS3 compliant. The 80V rating provides additional safety margin in applications with voltage transients. Power dissipation is 270W, exceeding the original specification.

Not Recommended for Direct Replacement:

BUK7610-55AL,118 and STB140NF55T4 feature 55V Vdss ratings, which are below the original 75V specification. These parts are suitable only for applications with reduced voltage requirements and should not be used as direct replacements in 75V-rated circuits.

Compliance and Certification:

All recommended substitutes maintain RoHS3 compliance and MSL Level 1 (Unlimited) moisture sensitivity rating, matching the original part. All are surface mount D2PAK (TO-263-3) packages with identical pinout and thermal tab configuration. Operating temperature ranges (-55°C to 175°C) are consistent across all substitutes.

Frequently Asked Questions (FAQ)

Q1: Can STB75NF75T4 directly replace IRF2807ZSTRLPBF in existing PCB designs?

Yes. Both parts use identical D2PAK (TO-263-3) packaging with the same pinout and thermal tab configuration. No PCB layout modifications are required. STB75NF75T4 is an Active product from STMicroelectronics with superior thermal performance (300W vs. 170W) and meets all electrical specifications for direct substitution.

Q2: What is the difference between STB75NF75LT4 and STB75NF75T4?

Both parts share identical electrical ratings (75V, 75A, D2PAK package) and thermal performance (300W). The primary difference is gate charge: STB75NF75LT4 specifies 90 nC @ 5V, while STB75NF75T4 specifies 160 nC @ 10V. STB75NF75LT4 is preferred for applications requiring faster switching response with lower gate drive voltage.

Q3: Why is FDB045AN08A0 rated for 90A when the original part is 75A?

FDB045AN08A0 is a higher-current variant within the same voltage class (75V). The 90A rating reflects the device's thermal and electrical capability. In applications requiring only 75A, this part operates with current margin, providing design flexibility and potential thermal headroom. The higher power dissipation rating (310W vs. 170W) supports sustained operation at elevated currents.

Q4: Can HUF75545S3ST be used in place of IRF2807ZSTRLPBF?

Yes, with voltage margin consideration. HUF75545S3ST is rated for 80V Vdss compared to the original 75V specification. This higher voltage rating provides additional safety margin against voltage transients and overshoot conditions. The 75A continuous drain current matches the original specification exactly. All other electrical and thermal parameters are compatible.

Q5: Why are 55V-rated parts (BUK7610-55AL,118, STB140NF55T4) listed as substitutes?

These parts are listed for reference only and are not recommended for direct replacement. The 55V Vdss rating is below the original 75V specification. These parts are suitable only for applications with confirmed voltage requirements below 55V. Using a 55V-rated device in a 75V circuit risks device failure and is not an acceptable substitution.

Q6: What does "Not For New Designs" status mean for IRF2807ZSTRLPBF?

This status indicates that Infineon has discontinued active development and marketing of this part. While existing inventory may be available, the manufacturer recommends using alternative parts for new designs. This status necessitates identifying equivalent substitutes from active product lines to ensure long-term supply chain reliability and access to technical support.

Q7: Are all substitute parts RoHS3 compliant?

Yes. All recommended substitute parts maintain RoHS3 compliance and MSL Level 1 (Unlimited) moisture sensitivity rating, matching the original IRF2807ZSTRLPBF specifications. This ensures compatibility with modern manufacturing processes and environmental regulations.

Q8: How do on-state resistance (Rds On) differences affect substitution?

Rds On values vary across substitutes due to different semiconductor technologies and measurement conditions. Lower Rds On values (e.g., FDB045AN08A0 at 4.5 mOhm) result in reduced conduction losses and lower junction temperatures during operation. Higher Rds On values (e.g., PSMN012-80BS,118 at 11 mOhm) increase conduction losses. Selection depends on application thermal requirements and efficiency targets. All listed substitutes operate within acceptable ranges for the 75V/75A application class.

Q9: What is the significance of gate charge (Qg) differences?

Gate charge affects switching speed and gate drive circuit requirements. Lower gate charge (e.g., PSMN012-80BS,118 at 43 nC) enables faster switching with lower gate drive power consumption. Higher gate charge (e.g., HUF75545S3ST at 235 nC) requires more gate drive energy but may provide improved noise immunity. Selection depends on switching frequency requirements and gate drive circuit capability.

Q10: Can multiple substitute parts be used interchangeably in production?

Yes, provided that all parts meet the application's electrical and thermal requirements. However, best practice recommends standardizing on a single substitute part per design to simplify inventory management, procurement, and technical support. If multiple substitutes are used, ensure that all parts are qualified and tested in the specific application circuit before production release.

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