IRF2807ZSTRL N-Channel 75V 75A MOSFET Equivalent & Substitute Parts

Part Overview

The IRF2807ZSTRL is an N-Channel MOSFET manufactured by Vishay Siliconix, rated for 75V drain-to-source voltage and 75A continuous drain current in a surface mount D2PAK package. This device is discontinued at DiGi Electronics, necessitating identification of functionally equivalent alternatives from active product lines. The part operates across a temperature range of -55°C to 175°C and dissipates up to 170W at the case temperature. Substitute parts must maintain electrical compatibility across voltage, current, and thermal specifications while supporting the same D2PAK surface mount package configuration.

Key Parameters

Parameter	IRF2807ZSTRL	Unit
Drain-to-Source Voltage (Vdss)	75	V
Continuous Drain Current (Id) @ 25°C	75	A
On-State Resistance (Rds On) @ 53A, 10V	9.4	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	110	nC
Input Capacitance (Ciss) @ 25V	3270	pF
Power Dissipation (Max)	170	W
Operating Temperature Range	-55 to 175	°C
Package Type	D2PAK (TO-263-3)	—
Mounting Type	Surface Mount	—

Substitute Part Grouping Explanation

Substitution of the IRF2807ZSTRL is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 75V
Continuous Drain Current (Id): Must equal or exceed 75A at 25°C
Package Type: Must be D2PAK (TO-263-3) surface mount
Operating Temperature Range: Must span -55°C to 175°C
Gate Threshold Voltage (Vgs(th)): Must be compatible at specified gate drive levels

Secondary Compatibility Factors:

On-State Resistance (Rds On): Lower values indicate improved performance; values within ±20% of original are acceptable
Gate Charge (Qg): Affects switching speed; values within ±50% are acceptable
Input Capacitance (Ciss): Influences gate drive requirements; values within ±100% are acceptable
Power Dissipation: Higher ratings provide thermal margin

Substitute parts are grouped into three categories based on electrical performance relative to the original specification:

Category A - Direct Equivalents (Vdss = 75V, Id ≥ 75A): Parts meeting or exceeding the original voltage and current ratings with minimal parameter deviation.

Category B - Voltage-Elevated Substitutes (Vdss ≥ 75V, Id ≥ 75A): Parts with higher voltage ratings (80V) that maintain or exceed current capacity, suitable for applications with voltage margin requirements.

Category C - Current-Enhanced Substitutes (Vdss = 75V, Id > 75A): Parts with higher current ratings that provide thermal and current handling margin while maintaining the original voltage specification.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Vgs(th) (V)	Qg (nC)	Ciss (pF)	Power Diss. (W)	Status
IRF2807ZSTRL	Vishay Siliconix	75	75	9.4	4	110	3270	170	Discontinued
BUK9609-75A,118	NXP USA Inc.	75	75	8.5	2	—	8840	230	Active
FDB088N08	onsemi	75	120	8.8	4	118	6595	160	Active
HUF75545S3ST	onsemi	80	75	10	4	235	3750	270	Active
IRF3205STRLPBF	Infineon Technologies	55	110	8	4	146	3247	200	Active
IXTA90N075T2	IXYS	75	90	10	4	54	3290	180	Active
PSMN008-75B,118	Nexperia USA Inc.	75	75	8.5	4	122.8	5260	230	Active
PSMN012-80BS,118	Nexperia USA Inc.	80	74	11	4	43	2782	148	Active
PSMN8R7-80BS,118	Nexperia USA Inc.	80	90	8.7	4	52	3346	170	Active
STB140NF55T4	STMicroelectronics	55	80	8	4	142	5300	300	Active
STB140NF75T4	STMicroelectronics	75	120	7.5	4	218	5000	310	Active

Engineering Selection Recommendations

Primary Substitutes (Recommended for Direct Replacement):

PSMN008-75B,118 (Nexperia USA Inc.) is the closest functional equivalent. It maintains the 75V/75A specification with identical gate threshold voltage (4V @ 1mA), slightly improved on-state resistance (8.5mOhm vs. 9.4mOhm), and higher power dissipation rating (230W vs. 170W). RoHS3 compliance and active product status ensure long-term availability. Gate charge is marginally higher (122.8nC vs. 110nC), resulting in negligible switching speed impact.

FDB088N08 (onsemi) provides enhanced current capacity (120A vs. 75A) while maintaining 75V voltage rating. On-state resistance is comparable (8.8mOhm), and power dissipation is rated at 160W. This part is suitable for applications requiring current margin. RoHS3 compliance and active status are confirmed.

STB140NF75T4 (STMicroelectronics) offers the highest current rating (120A) and power dissipation (310W) at 75V specification. On-state resistance is superior (7.5mOhm), providing efficiency advantage. Gate charge is elevated (218nC), which may require gate driver adjustment in high-frequency switching applications. RoHS3 compliant and active.

Secondary Substitutes (Voltage-Elevated Category):

HUF75545S3ST (onsemi) operates at 80V with 75A current rating, suitable for applications with elevated voltage headroom. Power dissipation is highest among 75A-rated devices (270W). On-state resistance is marginally higher (10mOhm). Gate charge is significantly elevated (235nC @ 20V), requiring verification of gate drive capability.

PSMN8R7-80BS,118 (Nexperia USA Inc.) combines 80V rating with 90A current capacity. On-state resistance (8.7mOhm) is competitive, and gate charge is low (52nC), supporting high-frequency operation. Power dissipation is 170W, matching the original specification.

PSMN012-80BS,118 (Nexperia USA Inc.) operates at 80V with 74A current rating. On-state resistance is higher (11mOhm), and power dissipation is lower (148W). This part is suitable only for applications where voltage margin is critical and current/thermal requirements are not demanding.

Substitutes Not Recommended for Direct Replacement:

IRF3205STRLPBF (Infineon Technologies) has reduced voltage rating (55V), making it unsuitable for 75V applications despite higher current capacity (110A).

STB140NF55T4 (STMicroelectronics) similarly operates at 55V, disqualifying it from direct substitution.

BUK9609-75A,118 (NXP USA Inc.) maintains 75V/75A specification but is available only in bulk packaging, limiting suitability for standard procurement workflows.

IXTA90N075T2 (IXYS) provides 90A current at 75V with low gate charge (54nC), but power dissipation (180W) is marginally above the original, and availability is limited compared to primary alternatives.

Frequently Asked Questions (FAQ)

Q: Can I use a substitute part with higher voltage rating (80V) in a 75V application?

A: Yes. Higher voltage-rated MOSFETs are electrically compatible in lower-voltage applications. The 80V-rated devices (HUF75545S3ST, PSMN8R7-80BS,118, PSMN012-80BS,118) operate safely at 75V and below. No circuit modification is required. This approach provides voltage margin for transient overshoot protection.

Q: What is the impact of higher gate charge on circuit performance?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. Higher gate charge (e.g., HUF75545S3ST at 235nC vs. original 110nC) requires proportionally more gate drive current or longer switching time. For applications using fixed gate drivers, verify that the driver can supply the required charge within acceptable switching time. For variable-frequency applications, higher gate charge increases switching losses proportionally to frequency.

Q: Are all substitute parts RoHS compliant?

A: All recommended active substitutes (FDB088N08, HUF75545S3ST, IXTA90N075T2, PSMN008-75B,118, PSMN012-80BS,118, PSMN8R7-80BS,118, STB140NF55T4, STB140NF75T4) are RoHS3 compliant. The original IRF2807ZSTRL is RoHS non-compliant. Compliance status is critical for applications subject to RoHS regulations.

Q: Can I substitute a part with lower on-state resistance?

A: Yes. Lower on-state resistance (Rds On) reduces conduction losses and heat generation, improving efficiency. All recommended substitutes have comparable or lower Rds On values. This substitution is always beneficial and requires no circuit modification.

Q: What is the significance of the D2PAK package requirement?

A: The D2PAK (TO-263-3) package is a surface mount configuration with standardized pinout and thermal characteristics. All substitute parts listed maintain this package type, ensuring mechanical and thermal compatibility with existing PCB layouts. Package substitution to different form factors (e.g., TO-220, SO-8) requires PCB redesign and is not addressed in this reference.

Q: Which substitute offers the best thermal performance?

A: STB140NF75T4 provides the highest power dissipation rating (310W), followed by HUF75545S3ST (270W) and PSMN008-75B,118 (230W). For thermally constrained applications, these parts offer superior heat dissipation capability. Actual thermal performance depends on PCB copper area, thermal vias, and heatsinking implementation.

Q: Is the BUK9609-75A,118 suitable for production use?

A: BUK9609-75A,118 meets electrical specifications and includes AEC-Q101 automotive qualification. However, it is available only in bulk packaging, which may not align with standard component procurement and traceability requirements. For applications requiring tape-and-reel or cut-tape packaging with documented lot traceability, alternative parts are preferred.

Q: Can I use IRF3205STRLPBF as a substitute?

A: No. IRF3205STRLPBF has a maximum drain-to-source voltage of 55V, which is insufficient for 75V applications. Using this part in a 75V circuit will result in device failure due to voltage overstress.

Q: What is the difference between cut-tape and tape-and-reel packaging?

A: Tape-and-reel (TR) packaging provides components on continuous carrier tape suitable for automated pick-and-place assembly. Cut-tape (CT) packaging provides the same components on shorter tape segments for manual or semi-automated handling. Both formats are compatible with standard surface mount assembly processes. Selection depends on production volume and assembly equipment capability.

Q: How do I verify gate driver compatibility with a substitute part?

A: Verify that the gate driver can supply the required gate charge (Qg) within acceptable switching time. Calculate required gate current as: Ig = Qg / t_switch, where t_switch is the desired switching time. Confirm that the gate driver output current rating exceeds this calculated value. Additionally, verify that the driver output voltage range (typically ±10V to ±20V) matches the substitute part's maximum gate-source voltage (Vgs Max).

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