IRF2807ZS N-Channel 75V 75A MOSFET Equivalent & Substitute Parts

Part Overview

The IRF2807ZS is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 75V drain-to-source voltage and 75A continuous drain current in a D2PAK surface mount package. This device is classified as obsolete, which necessitates identification of functionally equivalent active alternatives for new designs and production continuity. The IRF2807ZS operates across a temperature range of -55°C to 175°C and delivers 170W maximum power dissipation at the case temperature (Tc).

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	75	V
Continuous Drain Current (Id) @ 25°C	75	A (Tc)
On-State Resistance (Rds On) @ 53A, 10V	9.4	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	110	nC
Power Dissipation (Max)	170	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	D2PAK (TO-263-3)	Surface Mount
Product Status	Obsolete	N/A

Substitute Part Grouping Explanation

Substitution of the IRF2807ZS is determined by strict electrical and mechanical compatibility criteria. The following parameters establish substitution validity:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 75V
Continuous Drain Current (Id): Must equal or exceed 75A at Tc
Package Type: Must be D2PAK (TO-263-3) surface mount
FET Type: N-Channel MOSFET technology
Gate Drive Voltage: 10V nominal drive capability
Operating Temperature Range: Must support -55°C to 175°C minimum

Secondary Compatibility Factors:

On-State Resistance (Rds On): Lower values indicate improved performance
Gate Charge (Qg): Lower values reduce switching losses
Power Dissipation: Higher ratings provide thermal margin
RoHS Compliance: Active substitutes must meet ROHS3 compliance
Moisture Sensitivity Level: MSL 1 (Unlimited) preferred for reliability

Substitute parts are grouped into two categories: Direct Electrical Equivalents (matching Vdss and Id specifications) and Enhanced Performance Alternatives (exceeding current or voltage ratings while maintaining package compatibility).

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ Tc (A)	Rds On (mOhm)	Qg (nC)	Pd Max (W)	Package	Status	RoHS
IRF2807ZS	Infineon	75	75	9.4	110	170	D2PAK	Obsolete	Non-compliant
STB75NF75T4	STMicroelectronics	75	80	11	160	300	D2PAK	Active	ROHS3
STB75NF75LT4	STMicroelectronics	75	75	11	90	300	D2PAK	Active	ROHS3
HUF75545S3ST	onsemi	80	75	10	235	270	D2PAK	Active	ROHS3
PSMN012-80BS,118	Nexperia	80	74	11	43	148	D2PAK	Active	ROHS3
PSMN8R7-80BS,118	Nexperia	80	90	8.7	52	170	D2PAK	Active	ROHS3
STB140NF55T4	STMicroelectronics	55	80	8	142	300	D2PAK	Active	ROHS3
STB140NF75T4	STMicroelectronics	75	120	7.5	218	310	D2PAK	Active	ROHS3
AOB470L	Alpha & Omega	75	100	10.2	136	268	D2PAK	Active	ROHS3
BUK768R3-60E,118	Nexperia	60	75	8.3	43.1	137	D2PAK	Active	ROHS3
STH140N8F7-2	STMicroelectronics	80	90	4	96	200	H2PAK-2	Active	ROHS3

Engineering Selection Recommendations

Tier 1: Direct Electrical Equivalents (Recommended Primary Substitutes)

STB75NF75T4 and STB75NF75LT4 from STMicroelectronics provide the closest electrical match to the IRF2807ZS. Both devices maintain the 75V Vdss rating and 75-80A continuous drain current specification. STB75NF75T4 offers 80A capability with 300W power dissipation, while STB75NF75LT4 matches the exact 75A rating with superior gate charge characteristics (90 nC versus 110 nC). Both are ROHS3 compliant, active products with D2PAK packaging and unlimited moisture sensitivity rating (MSL 1).

Tier 2: Enhanced Performance Alternatives

PSMN8R7-80BS,118 (Nexperia) and AOB470L (Alpha & Omega) exceed the original specifications while maintaining D2PAK compatibility. PSMN8R7-80BS,118 delivers 90A at 80V with superior on-state resistance (8.7 mOhm) and minimal gate charge (52 nC), reducing switching losses. AOB470L provides 100A continuous current at 75V with 268W power dissipation. Both are active, ROHS3-compliant products suitable for applications requiring higher current capacity or improved thermal performance.

Tier 3: Voltage-Reduced Alternatives

BUK768R3-60E,118 (Nexperia) operates at 60V Vdss with 75A continuous current. This device is suitable only for applications where the 60V rating meets system requirements. It features AEC-Q101 automotive qualification and TrenchMOS technology. The lower voltage rating reduces on-state resistance (8.3 mOhm) and gate charge (43.1 nC), improving efficiency in lower-voltage systems.

Tier 4: Higher Current Alternatives

STB140NF75T4 (STMicroelectronics) maintains 75V Vdss while providing 120A continuous current and 310W power dissipation. This device is appropriate for applications requiring increased current margin or thermal headroom. Gate charge increases to 218 nC, which may impact switching frequency performance.

Package Consideration:

STH140N8F7-2 (STMicroelectronics) uses H2PAK-2 packaging instead of D2PAK. This device is not recommended as a direct substitute due to package incompatibility, despite superior electrical characteristics (80V, 90A, 4 mOhm Rds On).

Frequently Asked Questions (FAQ)

Q1: Can STB75NF75T4 directly replace IRF2807ZS without circuit modification?

STB75NF75T4 maintains identical Vdss (75V) and comparable Id (80A versus 75A) specifications in the same D2PAK package. The device operates across the same temperature range (-55°C to 175°C). Direct substitution is electrically valid. However, the higher gate charge (160 nC versus 110 nC) may require gate driver adjustment in high-frequency switching applications. Verify gate driver current capability before implementation.

Q2: What is the significance of on-state resistance (Rds On) differences between substitutes?

On-state resistance directly determines conduction losses and heat generation. Lower Rds On values reduce power dissipation and improve efficiency. PSMN8R7-80BS,118 (8.7 mOhm) generates less heat than IRF2807ZS (9.4 mOhm) at equivalent current levels. In thermal-constrained applications, lower Rds On substitutes extend device lifetime and reduce cooling requirements.

Q3: Why is gate charge (Qg) important for substitution?

Gate charge determines the energy required to switch the MOSFET on and off. Higher Qg values increase switching losses and may require higher gate driver current. IRF2807ZS specifies 110 nC, while STB75NF75LT4 specifies 90 nC. Lower gate charge reduces switching frequency limitations and improves efficiency in high-frequency applications. Verify gate driver specifications support the substitute device's Qg rating.

Q4: Can I use BUK768R3-60E,118 in a 75V system?

No. BUK768R3-60E,118 is rated for maximum 60V Vdss. Using this device in a 75V system exceeds its voltage rating and causes immediate failure. This device is suitable only for applications where system voltage does not exceed 60V.

Q5: What does ROHS3 compliance mean for component selection?

ROHS3 compliance indicates the device meets Restriction of Hazardous Substances Directive requirements, restricting lead, cadmium, mercury, and other hazardous materials. IRF2807ZS is RoHS non-compliant (obsolete product). All recommended substitutes are ROHS3 compliant, meeting current environmental and regulatory standards for new designs and production.

Q6: Is MSL 1 (Unlimited) moisture sensitivity important?

MSL 1 indicates unlimited shelf life without moisture-related degradation. All recommended substitutes carry MSL 1 rating, ensuring reliable storage and handling without special moisture control measures. This simplifies supply chain management and reduces component failure risk from moisture absorption.

Q7: Why does STH140N8F7-2 appear in the substitute list if the package is different?

STH140N8F7-2 uses H2PAK-2 packaging, which is physically incompatible with D2PAK footprints. This device is listed as a technical alternative for applications where PCB redesign is acceptable. The superior electrical characteristics (4 mOhm Rds On, 96 nC Qg) may justify package migration in new designs. Existing D2PAK designs cannot accommodate this device without layout modification.

Q8: How do I select between multiple Tier 1 substitutes?

Selection depends on application priorities. STB75NF75T4 offers higher current margin (80A) and maximum power dissipation (300W) for thermally demanding applications. STB75NF75LT4 provides lower gate charge (90 nC) for high-frequency switching circuits. Both are electrically valid; choose based on thermal requirements and switching frequency specifications.

Q9: What is the impact of higher power dissipation ratings in substitute devices?

Higher power dissipation ratings (300W for STB series versus 170W for IRF2807ZS) indicate improved thermal performance and larger die size. This provides thermal margin in applications operating near maximum current or elevated ambient temperatures. Higher ratings do not increase power consumption; they indicate the device can safely dissipate more heat without exceeding junction temperature limits.

Q10: Are there any certifications or qualifications I should verify for automotive applications?

BUK768R3-60E,118 carries AEC-Q101 automotive qualification, suitable for automotive-grade applications. Other substitutes do not list automotive qualification. If AEC-Q101 compliance is required, BUK768R3-60E,118 is the only qualified option, provided the 60V rating meets system requirements.

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