IRF2807Z N-Channel 75V 75A MOSFET Equivalent & Substitute Parts

Part Overview

The IRF2807Z is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 75V drain-to-source voltage and 75A continuous drain current in a TO-220AB through-hole package. This device is classified as Obsolete, indicating it has been discontinued and is no longer recommended for new designs. The IRF2807Z belongs to the HEXFET® series and delivers 170W maximum power dissipation at the case temperature.

Due to its obsolete status, identifying equivalent and substitute parts is essential for design continuity, production support, and long-term component availability. Substitute parts must maintain electrical compatibility within the specified parameter ranges while offering active product status or improved performance characteristics.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	75	V
Continuous Drain Current (Id) @ 25°C	75	A (Tc)
On-State Resistance (Rds On) @ 53A, 10V	9.4	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	110	nC
Power Dissipation (Max)	170	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	TO-220AB	Through Hole
RoHS Status	Non-compliant	—

Substitute Part Grouping Explanation

Substitution of the IRF2807Z is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 75V
Continuous Drain Current (Id): Must equal or exceed 75A at 25°C case temperature
On-State Resistance (Rds On): Lower values indicate improved performance; values within ±15% of 9.4 mOhm are acceptable
Gate Charge (Qg): Lower values reduce switching losses; values ≤110 nC are preferred
Package Type: TO-220AB or TO-220-3 (mechanically compatible)
Operating Temperature: Must support -55°C to 175°C range
Mounting Type: Through-hole configuration required

Secondary Considerations:

Product Status: Active or Not For New Designs preferred over Obsolete
RoHS Compliance: ROHS3 Compliant preferred for regulatory alignment
Manufacturer: Infineon Technologies (primary), STMicroelectronics, onsemi, Texas Instruments, Alpha & Omega Semiconductor, NXP Semiconductors (secondary)

Substitute parts are grouped into three categories:

Manufacturer Recommended (MFR Recommended): Direct replacements with improved specifications or active product status
Parametric Equivalent: Identical electrical specifications with updated packaging or compliance status
Direct Manufacturer: Cross-manufacturer alternatives meeting or exceeding electrical requirements

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id (A)	Rds On (mOhm)	Qg (nC)	Pd (W)	Package	Status	RoHS
IRF2807Z	Infineon	75	75	9.4	110	170	TO-220AB	Obsolete	Non-compliant
IRF2807ZPBF	Infineon	75	75	9.4	110	170	TO-220AB	Active	ROHS3
IRFB3307ZPBF	Infineon	75	120	5.8	110	230	TO-220AB	Active	ROHS3
IRFB3607PBF	Infineon	75	80	9.0	84	140	TO-220AB	Not For New Designs	ROHS3
STP140N8F7	STMicroelectronics	80	90	4.3	96	200	TO-220	Active	ROHS3
AOT470	Alpha & Omega	75	100	10.5	136	268	TO-220	Active	ROHS3
CSD18534KCS	Texas Instruments	60	100	9.5	24	107	TO-220-3	Active	ROHS3
FDP75N08A	onsemi	75	75	11.0	104	137	TO-220-3	Obsolete	ROHS3
PHP29N08T,127	NXP	75	27	50.0	19	88	TO-220AB	Active	—
PHP79NQ08LT,127	Nexperia	75	73	16.0	30	157	TO-220AB	Obsolete	ROHS3
PSMN012-80PS,127	Nexperia	80	74	11.0	43	148	TO-220AB	Obsolete	ROHS3

Engineering Selection Recommendations

Tier 1: Primary Recommendation

IRF2807ZPBF (Infineon Technologies) is the optimal substitute for IRF2807Z. This part is the parametric equivalent with identical electrical specifications (75V, 75A, 9.4 mOhm Rds On, 110 nC gate charge) and maintains the same TO-220AB package configuration. The critical advantage is its Active product status and ROHS3 compliance, eliminating obsolescence risk and meeting modern regulatory requirements. Inventory availability is substantial (15,226 pcs), ensuring supply continuity.

Tier 2: Enhanced Performance Alternatives

IRFB3307ZPBF (Infineon Technologies) provides superior performance with 120A continuous drain current, 5.8 mOhm Rds On, and 230W power dissipation while maintaining 75V Vdss rating. This part is Active and ROHS3 compliant. The reduced on-state resistance delivers lower conduction losses and improved thermal performance. Suitable for applications requiring higher current capacity or lower heat generation. Inventory: 55,200 pcs.

IRFB3607PBF (Infineon Technologies) offers a mid-range option with 80A current rating, 9.0 mOhm Rds On, and 140W power dissipation. Product status is Not For New Designs but ROHS3 compliant. This part bridges the gap between IRF2807Z and IRFB3307ZPBF for applications with moderate current requirements. Inventory: 27,974 pcs.

Tier 3: Cross-Manufacturer Alternatives

STP140N8F7 (STMicroelectronics) is an active alternative with 80V Vdss, 90A current rating, and superior 4.3 mOhm Rds On. The DeepGATE™ and STripFET™ VII technology delivers 200W power dissipation. Package is TO-220 (mechanically compatible). ROHS3 compliant and Active status. Suitable for designs prioritizing efficiency. Inventory: 3,210 pcs.

AOT470 (Alpha & Omega Semiconductor) delivers 75V Vdss with 100A continuous drain current and 268W power dissipation in TO-220 package. Active product status and ROHS3 compliant. Higher gate charge (136 nC) and Rds On (10.5 mOhm) compared to IRF2807Z. Inventory: 15,100 pcs.

FDP75N08A (onsemi) matches the 75V/75A specification with 11.0 mOhm Rds On and 137W power dissipation in TO-220-3 package. Product status is Obsolete but ROHS3 compliant. Operating temperature range limited to -55°C to 150°C (versus 175°C for IRF2807Z). Inventory: 15,465 pcs.

Not Recommended for Direct Substitution:

CSD18534KCS (Texas Instruments) has reduced Vdss rating (60V versus 75V), limiting its use to lower voltage applications. While it offers superior gate charge (24 nC) and lower Rds On (9.5 mOhm), the voltage derating makes it unsuitable as a direct replacement.

PHP29N08T,127 (NXP) has significantly reduced current rating (27A versus 75A), making it unsuitable for applications requiring the full 75A capacity.

PHP79NQ08LT,127 and PSMN012-80PS,127 (Nexperia) are both Obsolete, offering no advantage over IRF2807ZPBF for new designs.

Frequently Asked Questions (FAQ)

Q1: Can IRF2807ZPBF be used as a direct drop-in replacement for IRF2807Z?

A: Yes. IRF2807ZPBF is the parametric equivalent with identical electrical specifications and the same TO-220AB package. The only differences are Active product status and ROHS3 compliance. No circuit modifications are required.

Q2: What is the primary advantage of IRFB3307ZPBF over IRF2807Z?

A: IRFB3307ZPBF provides 120A continuous drain current (versus 75A), 5.8 mOhm on-state resistance (versus 9.4 mOhm), and 230W power dissipation (versus 170W). These improvements reduce conduction losses and thermal stress. It is suitable for applications requiring higher current capacity or improved efficiency.

Q3: Are TO-220 and TO-220AB packages mechanically interchangeable?

A: TO-220 and TO-220AB are mechanically compatible for through-hole mounting. Both have three leads and identical pin spacing. However, verify PCB footprint specifications to ensure compatibility with your design.

Q4: Why is CSD18534KCS not recommended as a substitute?

A: CSD18534KCS has a reduced Vdss rating of 60V compared to the IRF2807Z specification of 75V. This voltage derating makes it unsuitable for applications operating at or near 75V. Using an undersized device creates reliability risk.

Q5: What does "Not For New Designs" product status mean?

A: "Not For New Designs" indicates the manufacturer continues to support existing designs but does not recommend the part for new applications. These parts may have limited availability or planned discontinuation. For new designs, select Active status parts such as IRF2807ZPBF or IRFB3307ZPBF.

Q6: How does on-state resistance (Rds On) affect circuit performance?

A: Lower Rds On values reduce conduction losses and heat generation. For example, IRFB3307ZPBF at 5.8 mOhm dissipates less power than IRF2807Z at 9.4 mOhm at the same current level. This improves efficiency and reduces thermal management requirements.

Q7: What is gate charge (Qg) and why does it matter?

A: Gate charge represents the total charge required to switch the MOSFET from off to on state. Lower gate charge (e.g., CSD18534KCS at 24 nC) reduces switching losses and allows faster switching speeds. Higher gate charge (e.g., AOT470 at 136 nC) increases switching losses but may provide better noise immunity.

Q8: Can I use a substitute part with higher Vdss rating?

A: Yes. A part with higher Vdss rating (e.g., STP140N8F7 at 80V versus IRF2807Z at 75V) is acceptable and provides additional voltage margin. However, verify that other parameters (current rating, Rds On, package) meet your application requirements.

Q9: What is the significance of RoHS compliance?

A: ROHS3 compliance indicates the part meets Restriction of Hazardous Substances regulations, eliminating lead and other restricted materials. This is required for many applications, particularly in consumer electronics and regulated industries. IRF2807Z is RoHS non-compliant, while IRF2807ZPBF is ROHS3 compliant.

Q10: How do I verify compatibility before substituting a part?

A: Compare the following parameters: Vdss (must equal or exceed), Id (must equal or exceed), Rds On (lower is better), Qg (lower is better), package type (must be mechanically compatible), and operating temperature range (must cover your application). Consult the datasheet for detailed electrical characteristics and thermal specifications.

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