IRF2807STRL N-Channel 75V 82A MOSFET D2PAK Equivalent & Substitute Parts

Part Overview

The IRF2807STRL is an N-Channel MOSFET manufactured by Infineon Technologies in the HEXFET® series, rated for 75V drain-to-source voltage and 82A continuous drain current in a D2PAK surface mount package. The device is classified as obsolete product status, though parametrically equivalent and substitute alternatives remain available from active product lines. Identification of equivalent and substitute parts is necessary to maintain design continuity and ensure component availability for new production and field service applications.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	75	V
Continuous Drain Current (Id) @ 25°C	82	A
On-State Resistance (Rds On) @ 43A, 10V	13	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	160	nC
Power Dissipation (Max)	230	W
Operating Temperature Range	-55 to 175	°C
Package Type	D2PAK (TO-263-3)	Surface Mount
Vgs (Max)	±20	V

Substitute Part Grouping Explanation

Substitution of the IRF2807STRL is determined by the following electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): 75V minimum
Continuous Drain Current (Id): 82A minimum at 25°C
On-State Resistance (Rds On): 13mOhm maximum at rated conditions
Gate Threshold Voltage (Vgs(th)): 4V maximum
Package Type: D2PAK (TO-263-3) surface mount
Operating Temperature Range: -55°C to 175°C minimum
Gate Voltage Rating (Vgs): ±20V minimum

Grouping Logic:

Group 1 - Parametric Equivalent: Parts with identical electrical specifications and same package type. These provide direct replacement capability without circuit modification.

Group 2 - Functional Equivalent (Higher Current Rating): Parts with 75V Vdss rating, current rating ≥82A, and compatible Rds On characteristics. These provide enhanced performance margin while maintaining voltage compatibility.

Group 3 - Functional Equivalent (Voltage Margin): Parts with Vdss ≥75V and current rating ≥75A. These provide voltage headroom while maintaining or exceeding current capability.

Group 4 - Functional Equivalent (Lower Voltage Rating): Parts with Vdss ≥60V and current rating ≥75A. These are suitable for applications where the full 75V rating is not required.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Vgs(th) (V)	Qg (nC)	Pd (W)	Package	Status
IRF2807STRL	Infineon	75	82	13 @ 43A, 10V	4 @ 250µA	160 @ 10V	230	D2PAK	Obsolete
IRF2807STRLPBF	Infineon	75	82	13 @ 43A, 10V	4 @ 250µA	160 @ 10V	230	D2PAK	Active
STB75NF75T4	STMicroelectronics	75	80	11 @ 40A, 10V	4 @ 250µA	160 @ 10V	300	D2PAK	Active
STB140NF75T4	STMicroelectronics	75	120	7.5 @ 70A, 10V	4 @ 250µA	218 @ 10V	310	D2PAK	Active
HUF75545S3ST	onsemi	80	75	10 @ 75A, 10V	4 @ 250µA	235 @ 20V	270	D2PAK	Active
HUF76439S3ST	onsemi	60	75	12 @ 75A, 10V	3 @ 250µA	84 @ 10V	180	D2PAK	Active
PSMN012-80BS,118	Nexperia	80	74	11 @ 15A, 10V	4 @ 1mA	43 @ 10V	148	D2PAK	Active
PSMN017-80BS,118	Nexperia	80	50	17 @ 10A, 10V	4 @ 1mA	26 @ 10V	103	D2PAK	Active
STB75NF75LT4	STMicroelectronics	75	75	11 @ 37.5A, 10V	2.5 @ 250µA	90 @ 5V	300	D2PAK	Active
IPB50N10S3L16ATMA1	Infineon	100	50	15.4 @ 50A, 10V	2.4 @ 60µA	64 @ 10V	100	TO-263-3	Active

Engineering Selection Recommendations

Direct Replacement (Parametric Equivalent):

IRF2807STRLPBF is the direct parametric equivalent to IRF2807STRL. This part maintains identical electrical specifications and D2PAK packaging. The primary distinction is product status: IRF2807STRLPBF is classified as Active, ensuring continued availability and manufacturing support. RoHS3 compliance status is Compliant, compared to the original part's non-compliant status. This part is recommended for new designs and production applications requiring the exact electrical and thermal characteristics of the original specification.

Functional Equivalents with Enhanced Performance:

STB75NF75T4 and STB140NF75T4 (STMicroelectronics STripFET™ series) provide 75V Vdss rating with current ratings of 80A and 120A respectively. Both are Active products with RoHS3 compliance. STB75NF75T4 offers comparable current handling (80A) with improved on-state resistance (11mOhm vs. 13mOhm) and higher power dissipation capability (300W vs. 230W). STB140NF75T4 provides significantly higher current capacity (120A) with superior on-state resistance (7.5mOhm), suitable for applications requiring performance margin beyond the original specification.

Functional Equivalents with Voltage Margin:

HUF75545S3ST (onsemi UltraFET™) provides 80V Vdss with 75A continuous drain current. This part offers 5V additional voltage headroom while maintaining 75A current capability. On-state resistance is 10mOhm at 75A, providing improved efficiency. Power dissipation rating is 270W. This part is suitable for applications where voltage margin is beneficial and current requirements are at or below 75A.

Functional Equivalents for Lower Voltage Applications:

HUF76439S3ST (onsemi UltraFET™) is rated for 60V Vdss with 75A continuous drain current. This part is applicable only to applications where the circuit voltage does not exceed 60V. Gate charge is significantly lower (84nC vs. 160nC), resulting in faster switching characteristics. This part is not suitable for direct replacement in circuits requiring the full 75V rating.

Nexperia Alternatives:

PSMN012-80BS,118 provides 80V Vdss with 74A continuous drain current, closely matching the original current specification. On-state resistance is 11mOhm. This part is suitable for applications where 80V voltage rating is acceptable. PSMN017-80BS,118 provides 80V Vdss but with reduced current rating (50A), making it unsuitable for the full 82A specification.

Higher Voltage Alternative:

IPB50N10S3L16ATMA1 (Infineon OptiMOS™) provides 100V Vdss but with reduced current rating (50A). This part is not suitable for direct replacement due to insufficient current capacity. It is applicable only to applications where current requirements do not exceed 50A and higher voltage margin is required.

Frequently Asked Questions (FAQ)

Q: Can IRF2807STRLPBF be used as a direct replacement for IRF2807STRL?

A: Yes. IRF2807STRLPBF is the parametric equivalent with identical electrical specifications (75V, 82A, 13mOhm Rds On, 230W power dissipation) and D2PAK packaging. The primary difference is product status: IRF2807STRLPBF is Active with RoHS3 compliance, whereas the original is Obsolete and RoHS non-compliant. No circuit modification is required.

Q: What is the difference between STB75NF75T4 and STB75NF75LT4?

A: Both parts are STMicroelectronics STripFET™ series with 75V Vdss rating and D2PAK packaging. STB75NF75T4 is rated for 80A continuous drain current with 11mOhm Rds On and 300W power dissipation. STB75NF75LT4 is rated for 75A continuous drain current with 11mOhm Rds On and 300W power dissipation. STB75NF75T4 provides higher current capacity and is the closer match to the 82A IRF2807STRL specification.

Q: Can HUF76439S3ST replace IRF2807STRL in all applications?

A: No. HUF76439S3ST is rated for 60V Vdss, which is 15V lower than the IRF2807STRL specification of 75V. This part is suitable only for applications where circuit voltage does not exceed 60V. For circuits designed for 75V operation, this part does not provide adequate voltage margin and may fail under overvoltage conditions.

Q: What are the key parameters that determine substitutability?

A: Substitutability is determined by: (1) Drain-to-Source Voltage (Vdss) must be ≥75V; (2) Continuous Drain Current (Id) must be ≥82A at 25°C; (3) On-State Resistance (Rds On) must be ≤13mOhm at rated conditions; (4) Package type must be D2PAK (TO-263-3); (5) Operating temperature range must include -55°C to 175°C; (6) Gate voltage rating (Vgs) must be ±20V minimum. Parts meeting all criteria are direct functional equivalents.

Q: Why is gate charge (Qg) important in substitution?

A: Gate charge affects switching speed and driver circuit requirements. The IRF2807STRL has 160nC gate charge at 10V. Substitute parts with significantly different gate charge values may require driver circuit adjustment. For example, HUF76439S3ST has 84nC gate charge, resulting in faster switching. Parts with higher gate charge (such as STB140NF75T4 at 218nC) require more driver current but may provide improved noise characteristics.

Q: Are all substitute parts RoHS3 compliant?

A: All substitute parts listed in the Active product status category are RoHS3 compliant. The original IRF2807STRL is RoHS non-compliant. For applications requiring RoHS compliance, IRF2807STRLPBF, STB75NF75T4, STB140NF75T4, HUF75545S3ST, HUF76439S3ST, PSMN012-80BS,118, PSMN017-80BS,118, and STB75NF75LT4 all meet RoHS3 requirements.

Q: What is the inventory status of substitute parts?

A: IRF2807STRLPBF has 23,954 pieces in stock. STB75NF75T4 has 43,400 pieces in stock. HUF75545S3ST has 4,600 pieces in stock. PSMN012-80BS,118 has 5,993 pieces in stock. STB75NF75LT4 has 5,781 pieces in stock. STB140NF75T4 has 2,749 pieces in stock. HUF76439S3ST has 2,244 pieces in stock. PSMN017-80BS,118 has 5,538 pieces in stock. IPB50N10S3L16ATMA1 has 3,296 pieces in stock.

Q: Can I use a higher current-rated part as a substitute?

A: Yes, provided all other parameters meet or exceed the original specification. Higher current-rated parts (such as STB140NF75T4 at 120A) provide performance margin and are suitable substitutes. However, verify that the circuit design can accommodate any differences in gate charge, input capacitance, or thermal characteristics. Higher current-rated parts typically have larger die size and may have different parasitic characteristics.

Q: What is the significance of Vgs(th) differences between parts?

A: Gate threshold voltage (Vgs(th)) determines the gate voltage at which the MOSFET begins to conduct. The IRF2807STRL has Vgs(th) of 4V at 250µA. Most substitute parts maintain this specification. STB75NF75LT4 has 2.5V Vgs(th), resulting in faster turn-on at lower gate voltages. IPB50N10S3L16ATMA1 has 2.4V Vgs(th). Lower Vgs(th) values may improve switching speed but require verification that the gate driver can reliably turn off the device at the specified maximum gate voltage.

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