IRF2807SPBF N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRF2807SPBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 75V drain-to-source voltage with 82A continuous drain current in a D2PAK surface mount package. This device is part of the HEXFET® series and is classified as discontinued at DiGi Electronics, necessitating identification of active equivalent and substitute components for ongoing design requirements and production continuity.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	75	V
Continuous Drain Current @ 25°C (Id)	82	A (Tc)
On-State Resistance @ 43A, 10V (Rds On)	13	mOhm
Gate Threshold Voltage @ 250µA (Vgs(th))	4	V
Gate Charge @ 10V (Qg)	160	nC
Power Dissipation (Max)	230	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	D2PAK (TO-263-3)	Surface Mount
Gate Voltage (Max)	±20	V

Substitute Part Grouping Explanation

Substitution of the IRF2807SPBF is determined by alignment across the following critical parameters:

Voltage Rating (Vdss): The substitute must equal or exceed 75V. Parts rated at 80V, 100V, or higher voltage ratings are acceptable as they provide equivalent or superior voltage withstand capability.

Current Rating (Id): The substitute must equal or exceed 82A continuous drain current at 25°C. Higher current ratings provide design margin and thermal performance headroom.

Package Type: All substitutes must use D2PAK (TO-263-3) surface mount packaging to ensure mechanical and thermal interface compatibility with existing PCB layouts.

On-State Resistance (Rds On): Lower or equivalent Rds On values reduce conduction losses and heat generation. The IRF2807SPBF specifies 13 mOhm maximum; substitutes with 17 mOhm or lower are functionally compatible.

Gate Charge (Qg): Lower gate charge reduces switching losses and driver circuit stress. Values between 20 nC and 235 nC are acceptable within the substitute group.

Operating Temperature Range: All substitutes maintain -55°C to 175°C operating range, ensuring thermal compatibility.

Compliance & Status: All substitute parts are RoHS3 compliant, REACH unaffected, and carry active product status with current inventory availability.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Power Diss. (W)	Package	Status
IRF2807SPBF	Infineon	75	82	13	160	230	D2PAK	Discontinued
HUF75545S3ST	onsemi	80	75	10	235	270	D2PAK	Active
PSMN012-80BS,118	Nexperia	80	74	11	43	148	D2PAK	Active
PSMN017-80BS,118	Nexperia	80	50	17	26	103	D2PAK	Active
STB140NF75T4	STMicroelectronics	75	120	7.5	218	310	D2PAK	Active
STB75NF75T4	STMicroelectronics	75	80	11	160	300	D2PAK	Active
STB75NF75LT4	STMicroelectronics	75	75	11	90	300	D2PAK	Active
FDB045AN08A0	onsemi	75	90	4.5	138	310	D2PAK	Active
IXTA130N10T	IXYS	100	130	9.1	104	360	D2PAK	Active
IPB50N10S3L16ATMA1	Infineon	100	50	15.4	64	100	D2PAK	Active
PSMN015-60BS,118	Nexperia	60	50	14.8	20.9	86	D2PAK	Active

Engineering Selection Recommendations

Primary Substitutes (Highest Compatibility):

The STB75NF75T4 (STMicroelectronics) provides the closest electrical match to the IRF2807SPBF. Both devices share identical 75V voltage rating, equivalent 80A continuous drain current, matching 160 nC gate charge, and D2PAK packaging. The STB75NF75T4 offers superior on-state resistance (11 mOhm vs. 13 mOhm) and higher power dissipation capability (300W vs. 230W), providing direct pin-compatible replacement with enhanced thermal performance. Product status is active with 43,400 units in stock.

The FDB045AN08A0 (onsemi PowerTrench®) matches the 75V voltage rating and exceeds the 82A current requirement with 90A continuous drain current. Superior on-state resistance of 4.5 mOhm significantly reduces conduction losses. Gate charge of 138 nC is lower than the original, reducing switching losses. Power dissipation of 310W provides thermal margin. Product status is active with 3,787 units in stock.

Secondary Substitutes (Voltage-Elevated Options):

The IXTA130N10T (IXYS Trench) operates at 100V, exceeding the 75V requirement, with 130A continuous drain current providing substantial design margin. On-state resistance of 9.1 mOhm and power dissipation of 360W deliver superior thermal characteristics. Gate charge of 104 nC reduces driver stress. Product status is active with 2,458 units in stock. This device is suitable for applications where higher voltage headroom is beneficial.

The IPB50N10S3L16ATMA1 (Infineon OptiMOS™) operates at 100V with 50A continuous drain current. While current rating is below the original specification, this device is suitable for applications with reduced current requirements. On-state resistance of 15.4 mOhm and gate charge of 64 nC provide efficient switching characteristics. Product status is active with 3,296 units in stock.

Voltage-Reduced Option:

The PSMN015-60BS,118 (Nexperia) operates at 60V, below the original 75V rating. This device is suitable only for applications where the maximum operating voltage does not exceed 60V. Current rating of 50A is below the original specification. Product status is active with 12,675 units in stock.

Compliance & Regulatory Status:

All recommended substitutes are RoHS3 compliant, REACH unaffected, and classified as active products with current manufacturing and inventory support. All devices maintain the -55°C to 175°C operating temperature range and ±20V gate voltage specification of the original part.

Frequently Asked Questions (FAQ)

Q: Can the STB75NF75T4 directly replace the IRF2807SPBF without PCB modifications?

A: Yes. Both devices use D2PAK (TO-263-3) surface mount packaging with identical pin configuration and thermal interface. No PCB layout changes are required. The STB75NF75T4 provides equivalent electrical performance with improved on-state resistance and power dissipation capability.

Q: What is the primary advantage of the FDB045AN08A0 over the IRF2807SPBF?

A: The FDB045AN08A0 provides significantly lower on-state resistance (4.5 mOhm vs. 13 mOhm), reducing conduction losses by approximately 65% at rated current. This results in lower junction temperature and reduced thermal management requirements. Higher power dissipation rating (310W vs. 230W) provides additional thermal margin.

Q: Is the IXTA130N10T suitable for 75V applications?

A: Yes. The IXTA130N10T is rated for 100V drain-to-source voltage, which exceeds the 75V requirement of the original application. The device operates safely at 75V with additional voltage headroom. The 130A continuous drain current provides substantial design margin above the 82A requirement.

Q: Why does the IPB50N10S3L16ATMA1 have lower current rating than the IRF2807SPBF?

A: The IPB50N10S3L16ATMA1 is designed for different application requirements with 50A continuous drain current versus 82A for the original part. This device is suitable only for applications where the maximum required current does not exceed 50A. The 100V voltage rating provides additional voltage headroom for higher-voltage applications.

Q: Can I use the PSMN015-60BS,118 in place of the IRF2807SPBF?

A: The PSMN015-60BS,118 operates at 60V maximum drain-to-source voltage, which is below the original 75V rating. This device is suitable only for applications where the maximum operating voltage does not exceed 60V. Use of this device in 75V applications will result in device failure.

Q: What is the difference between the STB75NF75T4 and STB75NF75LT4?

A: Both devices share 75V voltage rating and D2PAK packaging. The STB75NF75T4 provides 80A continuous drain current with 160 nC gate charge. The STB75NF75LT4 provides 75A continuous drain current with 90 nC gate charge. The STB75NF75LT4 offers lower gate charge, reducing switching losses and driver circuit stress, but with slightly reduced current capacity.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed in this reference are RoHS3 compliant and REACH unaffected, meeting current environmental and regulatory requirements for electronic component manufacturing and use.

Q: What packaging considerations apply to these substitutes?

A: All substitute parts use D2PAK (TO-263-3) surface mount packaging, identical to the IRF2807SPBF. This ensures mechanical compatibility with existing PCB layouts, solder reflow processes, and thermal management interfaces. No package-related design modifications are required.

Q: Which substitute provides the best thermal performance?

A: The IXTA130N10T provides the highest power dissipation rating at 360W, combined with the lowest on-state resistance at 9.1 mOhm among the substitute group. The FDB045AN08A0 provides the second-best thermal performance with 310W power dissipation and 4.5 mOhm on-state resistance. Both devices significantly reduce junction temperature compared to the original IRF2807SPBF.

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