IRF2807S N-Channel MOSFET 75V 82A Equivalent & Substitute Parts

Part Overview

The IRF2807S is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 75V drain-to-source voltage with 82A continuous drain current in a D2PAK surface mount package. This device is classified as obsolete product status. Due to its obsolete classification, equivalent and substitute parts from active product lines are necessary to maintain design continuity and ensure long-term component availability for new production and field replacements.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	75	V
Continuous Drain Current (Id) @ 25°C	82	A (Tc)
On-State Resistance (Rds On) @ 43A, 10V	13	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	160	nC
Power Dissipation (Max)	230	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	D2PAK (TO-263-3)	Surface Mount
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—

Substitute Part Grouping Explanation

Substitute parts for the IRF2807S are selected based on the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): 75V or higher
Continuous Drain Current (Id): 75A or higher at 25°C
Package Type: D2PAK (TO-263-3) surface mount
Gate Threshold Voltage (Vgs(th)): 4V nominal
Maximum Gate Voltage (Vgs): ±20V
Operating Temperature Range: -55°C to 175°C
Mounting Type: Surface Mount

Substitution Logic: Parts are grouped into two categories based on electrical performance alignment:

Category A - Direct Electrical Equivalents (Vdss 75V, Id ≥75A): These devices maintain the same voltage rating and comparable current ratings, ensuring pin-compatible operation with minimal circuit redesign.

Category B - Higher Voltage Rated Alternatives (Vdss ≥80V, Id ≥50A): These devices provide higher voltage headroom while maintaining D2PAK packaging and compatible gate characteristics. Higher Vdss ratings do not prevent substitution in 75V applications.

All substitute parts maintain D2PAK surface mount packaging, ±20V maximum gate voltage specification, and -55°C to 175°C operating temperature range, ensuring mechanical and thermal compatibility.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Power Diss. (W)	Package	Product Status	RoHS
IRF2807S	Infineon	75	82	13 @ 43A, 10V	160 @ 10V	230	D2PAK	Obsolete	Non-compliant
STB75NF75T4	STMicroelectronics	75	80	11 @ 40A, 10V	160 @ 10V	300	D2PAK	Active	ROHS3
STB140NF75T4	STMicroelectronics	75	120	7.5 @ 70A, 10V	218 @ 10V	310	D2PAK	Active	ROHS3
STB75NF75LT4	STMicroelectronics	75	75	11 @ 37.5A, 10V	90 @ 5V	300	D2PAK	Active	ROHS3
HUF75545S3ST	onsemi	80	75	10 @ 75A, 10V	235 @ 20V	270	D2PAK	Active	ROHS3
PSMN012-80BS,118	Nexperia USA Inc.	80	74	11 @ 15A, 10V	43 @ 10V	148	D2PAK	Active	ROHS3
PSMN017-80BS,118	Nexperia USA Inc.	80	50	17 @ 10A, 10V	26 @ 10V	103	D2PAK	Active	ROHS3
FDB16AN08A0	Fairchild Semiconductor	75	58 (Tc)	16 @ 58A, 10V	42 @ 10V	135	D2PAK	Active	Not specified
IPB50N10S3L16ATMA1	Infineon Technologies	100	50	15.4 @ 50A, 10V	64 @ 10V	100	D2PAK	Active	ROHS3

Engineering Selection Recommendations

Primary Recommendation - STB75NF75T4 (STMicroelectronics): This part provides the closest electrical match to the IRF2807S with identical 75V Vdss rating and 80A continuous drain current. The STB75NF75T4 maintains D2PAK packaging and is ROHS3 compliant with active product status, ensuring long-term availability. On-state resistance of 11 mOhm at 40A, 10V is superior to the original 13 mOhm specification. Power dissipation capability of 300W exceeds the original 230W rating.

Secondary Recommendation - STB140NF75T4 (STMicroelectronics): This device offers higher current capability (120A) at the same 75V voltage rating with improved on-state resistance (7.5 mOhm). Suitable for applications requiring enhanced thermal margin or higher current transients. ROHS3 compliant and active product status.

Alternative - HUF75545S3ST (onsemi): Provides 75A continuous current at 80V Vdss with superior on-state resistance (10 mOhm at 75A, 10V). The 80V rating provides additional voltage margin. ROHS3 compliant and active product status. Suitable for designs with higher voltage tolerance.

Lower Current Alternative - PSMN012-80BS,118 (Nexperia USA Inc.): Rated for 74A at 80V with 11 mOhm on-state resistance. Offers lower gate charge (43 nC) compared to the original 160 nC, reducing gate drive requirements. ROHS3 compliant and active product status.

Compliance Consideration: All recommended substitutes are ROHS3 compliant with active product status, addressing the original part's obsolete classification and RoHS non-compliance. Selection should prioritize parts with ROHS3 compliance for new designs and long-term production support.

Frequently Asked Questions (FAQ)

Q1: Can I directly replace IRF2807S with STB75NF75T4 without circuit modifications?

A: Yes. Both devices share identical D2PAK packaging, 75V Vdss rating, and compatible gate characteristics (4V threshold, ±20V maximum gate voltage). Pin configuration is identical. The STB75NF75T4 provides superior on-state resistance (11 mOhm vs. 13 mOhm) and higher power dissipation capability (300W vs. 230W), making it a direct drop-in replacement.

Q2: What is the difference between 75V and 80V rated devices in this application?

A: The IRF2807S is rated for 75V maximum drain-to-source voltage. Substitute parts rated at 80V (HUF75545S3ST, PSMN012-80BS,118, PSMN017-80BS,118) provide additional voltage headroom without affecting circuit operation in 75V applications. Higher voltage ratings do not create compatibility issues; they provide design margin for voltage transients.

Q3: Why do some substitutes have lower current ratings than the original IRF2807S?

A: The IPB50N10S3L16ATMA1 (50A) and PSMN017-80BS,118 (50A) are listed as alternatives for applications where full 82A current is not required. These parts offer lower gate charge and reduced power dissipation, beneficial for gate drive optimization and thermal management in lower-current designs. Selection depends on actual circuit current requirements.

Q4: What is the significance of gate charge (Qg) differences?

A: Gate charge affects gate drive circuit design and switching speed. The original IRF2807S requires 160 nC at 10V. Substitutes with lower gate charge (PSMN012-80BS,118 at 43 nC, PSMN017-80BS,118 at 26 nC) reduce gate drive power and allow faster switching. Higher gate charge devices (STB140NF75T4 at 218 nC) require more robust gate drive but may offer improved EMI characteristics.

Q5: Are all substitute parts RoHS compliant?

A: All recommended active substitutes are ROHS3 compliant. The original IRF2807S is RoHS non-compliant. For new designs and production requiring RoHS compliance, select from the active substitute list. All listed substitutes meet REACH and EAR99 export classification requirements.

Q6: What is the difference between D2PAK and TO-263-3 packaging designations?

A: D2PAK and TO-263-3 are equivalent designations for the same surface mount package. Both refer to a 3-lead package with 2 leads plus a tab for thermal connection. All parts in this comparison use identical D2PAK/TO-263-3 packaging, ensuring mechanical compatibility.

Q7: Can I use IPB50N10S3L16ATMA1 (100V rated) in a 75V application?

A: Yes. The IPB50N10S3L16ATMA1 is rated for 100V maximum drain-to-source voltage, providing additional voltage margin in 75V applications. However, its 50A continuous current rating is lower than the original 82A specification. This part is suitable only for applications where 50A current is sufficient.

Q8: What factors should determine my choice between STB75NF75T4 and STB140NF75T4?

A: Both are STMicroelectronics STripFET™ devices with 75V rating and D2PAK packaging. The STB75NF75T4 (80A) matches the original current rating more closely. The STB140NF75T4 (120A) provides higher current capability and lower on-state resistance (7.5 mOhm vs. 11 mOhm), beneficial for high-current or thermally constrained applications. Select based on actual circuit current requirements and thermal design margins.

Q9: How do I verify pin compatibility between substitute parts?

A: All parts listed use D2PAK (TO-263-3) packaging with identical pin configuration: Gate (pin 1), Drain (pin 2), Source (pin 3, tab). Verify pinout in device datasheets before assembly. No pin remapping is required for any listed substitutes.

Q10: What is the inventory status of substitute parts?

A: Current inventory levels are: STB75NF75T4 (43,400 pcs), FDB16AN08A0 (28,900 pcs), IPB50N10S3L16ATMA1 (3,296 pcs), HUF75545S3ST (4,600 pcs), PSMN012-80BS,118 (5,993 pcs), PSMN017-80BS,118 (5,538 pcs), STB140NF75T4 (2,749 pcs), STB75NF75LT4 (5,781 pcs). Inventory levels are subject to change; verify current availability with component suppliers.

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