IRF2807PBF N-Channel MOSFET 75V 82A Equivalent & Substitute Parts

Part Overview

The IRF2807PBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 75V drain-to-source voltage with 82A continuous drain current at 25°C. This device is packaged in TO-220AB through-hole configuration and is part of the HEXFET® series. The IRF2807PBF carries a "Not For New Designs" product status, indicating it is obsolete for new applications. Identifying equivalent and substitute parts is necessary to support legacy systems and to transition designs to active, supported alternatives that maintain electrical and mechanical compatibility.

Substiute Parts

IRF2807PBF
Infineon TechnologiesIn Stock: 85134IRF2807PBF Datasheet
IRF2807PBF
Current Part
IRF2807ZPBF
Infineon TechnologiesIn Stock: 15325IRF2807ZPBF Datasheet
IRF2807ZPBF
Direct
IRFB3607PBF
Infineon TechnologiesIn Stock: 28020IRFB3607PBF Datasheet
IRFB3607PBF
MFR Recommended
DMT6009LCT
Diodes IncorporatedIn Stock: 5339DMT6009LCT Datasheet
DMT6009LCT
MFR Recommended
PHP79NQ08LT,127
Nexperia USA Inc.In Stock: 6805PHP79NQ08LT,127 Datasheet
PHP79NQ08LT,127
MFR Recommended
PSMN012-80PS,127
Nexperia USA Inc.In Stock: 5951PSMN012-80PS,127 Datasheet
PSMN012-80PS,127
MFR Recommended
PSMN017-80PS,127
Nexperia USA Inc.In Stock: 6937PSMN017-80PS,127 Datasheet
PSMN017-80PS,127
MFR Recommended
STP140N8F7
STMicroelectronicsIn Stock: 3288STP140N8F7 Datasheet
STP140N8F7
MFR Recommended
STP140NF75
STMicroelectronicsIn Stock: 5351STP140NF75 Datasheet
STP140NF75
MFR Recommended
STP75NF75
STMicroelectronicsIn Stock: 364151STP75NF75 Datasheet
STP75NF75
MFR Recommended
STP76NF75
STMicroelectronicsIn Stock: 1494STP76NF75 Datasheet
STP76NF75
MFR Recommended

Key Parameters

Parameter Value Unit
Drain-to-Source Voltage (Vdss) 75 V
Continuous Drain Current (Id) @ 25°C 82 A
On-State Resistance (Rds On) @ 43A, 10V 13 mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA 4 V
Gate Charge (Qg) @ 10V 160 nC
Power Dissipation (Max) 230 W
Operating Temperature Range -55 to 175 °C
Package Type TO-220AB
Mounting Type Through Hole
RoHS Status ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the IRF2807PBF is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

  • Drain-to-Source Voltage (Vdss): Must equal or exceed 75V
  • Continuous Drain Current (Id): Must equal or exceed 82A at 25°C
  • Gate Drive Voltage: Must support 10V drive
  • Package Type: Must be TO-220AB or compatible TO-220 variant
  • Mounting Type: Must be through-hole
  • Operating Temperature Range: Must span -55°C to 175°C minimum

Secondary Compatibility Factors:

  • On-State Resistance (Rds On): Lower values indicate improved performance
  • Gate Charge (Qg): Lower values reduce switching losses
  • Power Dissipation: Must support thermal requirements of the application
  • RoHS and REACH Compliance: Must maintain regulatory compliance

Substitute parts are grouped into three categories based on their relationship to the IRF2807PBF:

  1. Direct Equivalents: Same base part number with variant suffixes (IRF2807ZPBF)
  2. Manufacturer-Recommended Alternatives: Infineon and alternative manufacturer parts meeting or exceeding electrical specifications
  3. Performance-Enhanced Alternatives: Parts with improved electrical characteristics while maintaining voltage and current ratings

Parameter Comparison

Part Number Manufacturer Vdss (V) Id @ 25°C (A) Rds On (mOhm) Qg (nC) Pd Max (W) Status Package
IRF2807PBF Infineon 75 82 13 @ 43A, 10V 160 @ 10V 230 Not For New Designs TO-220AB
IRF2807ZPBF Infineon 75 75 9.4 @ 53A, 10V 110 @ 10V 170 Active TO-220AB
IRFB3607PBF Infineon 75 80 9 @ 46A, 10V 84 @ 10V 140 Not For New Designs TO-220AB
PHP79NQ08LT,127 Nexperia USA Inc. 75 73 16 @ 25A, 10V 30 @ 5V 157 Obsolete TO-220AB
PSMN012-80PS,127 Nexperia USA Inc. 80 74 11 @ 15A, 10V 43 @ 10V 148 Obsolete TO-220AB
PSMN017-80PS,127 Nexperia USA Inc. 80 50 17 @ 10A, 10V 26 @ 10V 103 Obsolete TO-220AB
STP140N8F7 STMicroelectronics 80 90 4.3 @ 45A, 10V 96 @ 10V 200 Active TO-220
STP140NF75 STMicroelectronics 75 120 7.5 @ 70A, 10V 218 @ 10V 310 Active TO-220
STP75NF75 STMicroelectronics 75 80 11 @ 40A, 10V 160 @ 10V 300 Active TO-220
STP76NF75 STMicroelectronics 75 80 11 @ 40A, 10V 160 @ 10V 300 Active TO-220
DMT6009LCT Diodes Incorporated 60 37.2 12 @ 13.5A, 10V 33.5 @ 10V 25 Active TO-220-3

Engineering Selection Recommendations

For Direct Replacement in Active Designs:

The IRF2807ZPBF is the primary recommended substitute. This part maintains the same 75V Vdss rating and TO-220AB package, with Active product status. While the continuous drain current is reduced to 75A (compared to 82A), the on-state resistance is improved to 9.4 mOhm, and gate charge is reduced to 110 nC, resulting in lower switching losses and improved thermal performance. This part is suitable for applications where the 75A rating is sufficient.

For Enhanced Performance Requirements:

The STP75NF75 and STP76NF75 (STMicroelectronics) provide identical electrical specifications to the IRF2807PBF (75V, 80A) with improved power dissipation (300W versus 230W) and Active product status. These parts are direct functional equivalents with superior thermal characteristics. The STP140NF75 offers higher current capability (120A) at the same 75V rating with 310W power dissipation, suitable for applications requiring increased current headroom.

For Voltage-Rated Alternatives:

The STP140N8F7 (STMicroelectronics) provides 80V Vdss with 90A continuous current and Active status. This part offers improved voltage margin and higher current capacity with superior on-state resistance (4.3 mOhm). The PSMN012-80PS,127 (Nexperia) provides 80V with 74A current, though it carries Obsolete status.

Compliance Considerations:

All recommended substitute parts maintain ROHS3 compliance and REACH Unaffected status, consistent with the IRF2807PBF. Parts with Active product status (IRF2807ZPBF, STP75NF75, STP76NF75, STP140NF75, STP140N8F7) are preferred for new designs and long-term supply assurance.

Parts Not Recommended:

The DMT6009LCT (Diodes Incorporated) does not meet the minimum current requirement (37.2A versus 82A required) and operates at reduced voltage (60V). This part is unsuitable as a substitute.

Frequently Asked Questions (FAQ)

Q: Can the IRF2807ZPBF directly replace the IRF2807PBF in all applications?

A: The IRF2807ZPBF is electrically compatible for applications requiring 75A or less continuous drain current. The reduced current rating (75A versus 82A) and lower power dissipation (170W versus 230W) must be verified against application requirements. Both parts share identical voltage ratings (75V), gate drive voltage (10V), and operating temperature range (-55°C to 175°C). The improved on-state resistance and reduced gate charge of the IRF2807ZPBF provide superior switching performance.

Q: What is the difference between TO-220AB and TO-220 packages?

A: Both TO-220AB and TO-220 are through-hole packages with identical pin configurations and thermal characteristics. The designations refer to minor manufacturing variations. Parts specified as TO-220 or TO-220-3 are mechanically and electrically compatible with TO-220AB applications. All substitute parts listed maintain through-hole mounting compatibility.

Q: Why is the IRF2807PBF marked "Not For New Designs"?

A: This status indicates the part is obsolete and Infineon no longer recommends it for new circuit designs. Existing inventory remains available for legacy system support. The IRF2807ZPBF is the active replacement from Infineon, offering improved performance characteristics while maintaining the same voltage and package specifications.

Q: Can I use a higher-voltage-rated MOSFET as a substitute?

A: Yes. A MOSFET rated for higher drain-to-source voltage (such as 80V) can substitute for a 75V part, provided all other electrical parameters (continuous current, gate drive voltage, operating temperature) meet or exceed the original specification. Higher voltage ratings provide additional safety margin but do not compromise functionality in 75V applications.

Q: What is the significance of on-state resistance (Rds On) in substitution?

A: Lower on-state resistance reduces power dissipation during conduction, improving efficiency and thermal performance. The IRF2807ZPBF (9.4 mOhm) and IRFB3607PBF (9 mOhm) offer improved Rds On compared to the IRF2807PBF (13 mOhm), resulting in lower heat generation. For applications with high continuous current, lower Rds On values are advantageous.

Q: Are all substitute parts RoHS compliant?

A: Yes. All substitute parts listed maintain ROHS3 compliance and REACH Unaffected status, consistent with the IRF2807PBF. This ensures regulatory compliance for applications subject to environmental restrictions.

Q: What does gate charge (Qg) represent, and why does it matter?

A: Gate charge is the total charge required to switch the MOSFET from off to on state. Lower gate charge reduces switching losses and allows faster switching speeds. The IRF2807ZPBF (110 nC) and IRFB3607PBF (84 nC) have lower gate charge than the IRF2807PBF (160 nC), resulting in improved switching efficiency and reduced electromagnetic interference.

Q: Can I use the STP140NF75 in place of the IRF2807PBF?

A: Yes. The STP140NF75 meets all substitution criteria: 75V Vdss, 120A continuous current (exceeds 82A requirement), 10V gate drive, TO-220 package (compatible with TO-220AB), and -55°C to 175°C operating range. The higher current rating and improved power dissipation (310W) provide additional design margin. Active product status ensures long-term availability.

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