IRF2805STRLPBF Equivalent & Substitute Parts Reference

Part Overview

IRF2805STRLPBF is an N-Channel MOSFET manufactured by Infineon Technologies, categorized under Transistors, FETs, MOSFETs, optimized for power applications with a drain-to-source voltage rating of 55 V and continuous drain current of 135A (Tc). Product status is Obsolete, necessitating identification of suitable substitute parts matched precisely by key electrical, mechanical, and compliance parameters to ensure uninterrupted circuit performance and form-factor compatibility.

Key Parameters

Parameter	Value
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	55 V
Current - Continuous Drain (Id) @ 25°C	135A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	4.7mOhm @ 104A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	230 nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	5110 pF @ 25V
Power Dissipation (Max)	200W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D2PAK
Package / Case	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
RoHS Status	ROHS3 Compliant
MSL	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99

Substitute Part Grouping Explanation

Substitute models are selected strictly based on matching the following key parameters: FET type (N-Channel), MOSFET technology (Metal Oxide), drain-to-source voltage, continuous drain current, drive voltage, Rds(on), gate charge, maximum Vgs rating, input capacitance, power dissipation, operating temperature range, mounting type (Surface Mount), and package (D2PAK / TO-263-3). All candidates must also match compliance and supply chain requirements (RoHS, MSL, REACH, ECCN) where provided.

Parameter Comparison

Parameter	IRF2805STRLPBF	BUK764R0-55B,118	PSMN4R6-60BS,118	STB150NF55T4	STB160N75F3
FET Type	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	55 V	55 V	60 V	55 V	75 V
Current - Continuous Drain (Id) @ 25°C	135A (Tc)	75A (Tc)	100A (Tc)	120A (Tc)	120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V	10V	10V	10V	10V
Rds On (Max) @ Id, Vgs	4.7mOhm @ 104A, 10V	4mOhm @ 25A, 10V	4.4mOhm @ 25A, 10V	6mOhm @ 60A, 10V	4mOhm @ 60A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA	4V @ 1mA	4V @ 1mA	4V @ 250µA	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	230 nC @ 10V	86 nC @ 10V	70.8 nC @ 10V	190 nC @ 10V	85 nC @ 10V
Vgs (Max)	±20V	±20V	±20V	±20V	±20V
Input Capacitance (Ciss) (Max) @ Vds	5110 pF @ 25V	6776 pF @ 25V	4426 pF @ 30V	4400 pF @ 25V	6750 pF @ 25V
Power Dissipation (Max)	200W (Tc)	300W (Tc)	211W (Tc)	300W (Tc)	330W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)	-55°C ~ 175°C (TJ)	-55°C ~ 175°C (TJ)	-55°C ~ 175°C (TJ)	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Supplier Device Package	D2PAK	D2PAK	D2PAK	D2PAK	D2PAK
Package / Case	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
MSL	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)
REACH Status	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected
ECCN	EAR99	EAR99	EAR99	EAR99	EAR99

Engineering Selection Recommendations

For projects requiring the IRF2805STRLPBF, selection of a substitute must be based on its status as Obsolete and strict adherence to RoHS3 compliance, MSL 1 (Unlimited), REACH unaffected, and ECCN EAR99 designation. Substitute parts presented here all maintain package equality (D2PAK, TO-263-3), surface-mount mounting, and regulatory/product compliance as defined. Only devices matching these attributes should be considered for direct replacement.

Frequently Asked Questions (FAQ)

Q1: What are the most critical parameters to match for substitute selection of IRF2805STRLPBF?
A1: Key parameters are FET type (N-Channel), MOSFET technology, drain-to-source voltage, continuous drain current, Rds(on), gate charge, Vgs ratings, input capacitance, power dissipation, operating temperature, mounting type, package, RoHS, MSL, REACH, and ECCN.

Q2: Are all substitute parts compatible with the D2PAK footprint in circuit boards designed for IRF2805STRLPBF?
A2: All substitutes share the D2PAK (TO-263-3) package and are intended for surface-mount applications, supporting form and fit compatibility.

Q3: What compliance or supply chain certifications are required for substitute selection?
A3: Substitute parts must be ROHS3 compliant, have MSL 1 (Unlimited), REACH unaffected status, and ECCN EAR99 classification, consistent with IRF2805STRLPBF.

Q4: Are there temperature or dissipation limits that affect substitution?
A4: All listed substitutes provide operating temperatures of -55°C to 175°C (TJ) and power dissipation ratings at or above 200W, in line with the main part's ratings.

Q5: How do electrical differences (Id, Vdss, Rds(on)) impact suitability?
A5: Substitution suitability is determined by matching or exceeding the main part’s electrical specifications, as shown in the comparison table. For direct replacements, these values must be verified against application requirements strictly using the provided parameters.

Q6: Can substitutes from different manufacturers be selected?
A6: Substitute parts are provided from Infineon Technologies, Nexperia USA Inc., and STMicroelectronics, all ROHS and REACH compliant, compatible with the D2PAK footprint, and fulfilling required certifications.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message