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IRF2805SPBF N-Channel MOSFET Equivalent & Substitute Parts
Part Overview
The IRF2805SPBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 55V drain-to-source voltage with 135A continuous drain current at 25°C. This device is housed in a D2PAK (TO-263-3) surface mount package and is designed for high-current switching applications. The part is discontinued at DiGi Electronics, necessitating identification of functionally equivalent alternatives that maintain electrical and mechanical compatibility within the specified parameter ranges.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Drain-to-Source Voltage (Vdss) | 55 | V |
| Continuous Drain Current (Id) @ 25°C | 135 | A (Tc) |
| On-State Resistance (Rds On Max) @ 10V | 4.7 | mOhm @ 104A |
| Gate Threshold Voltage (Vgs th Max) | 4 | V @ 250µA |
| Gate Charge (Qg Max) @ 10V | 230 | nC |
| Power Dissipation (Max) | 200 | W (Tc) |
| Operating Temperature Range | -55 to 175 | °C (TJ) |
| Package Type | D2PAK (TO-263-3) | Surface Mount |
| Technology | N-Channel MOSFET | Metal Oxide |
Substitute Part Grouping Explanation
Substitution of the IRF2805SPBF is determined by the following critical parameters:
Voltage Rating Compatibility: Substitute parts must have a Vdss rating equal to or greater than 55V. Parts rated at 60V or 75V are acceptable as they provide equivalent or enhanced voltage margin.
Current Rating Compatibility: Substitute parts must support continuous drain current (Id) at or above 135A at 25°C. Parts with lower current ratings (75A, 80A, 100A, 120A) are considered partial substitutes with application-dependent suitability. Parts with higher current ratings (170A, 230A) are direct upgrades.
On-State Resistance (Rds On): The maximum on-state resistance at 10V gate drive must be comparable to or lower than the reference 4.7mOhm specification to maintain thermal performance and switching efficiency.
Package Compatibility: All substitute parts must use D2PAK (TO-263-3) or equivalent surface mount packages to ensure mechanical and thermal interface compatibility.
Gate Charge (Qg): Gate charge values between 70nC and 230nC are acceptable, as they fall within the operational range for standard gate driver circuits.
Temperature Range: All substitutes must support the full -55°C to 175°C operating temperature range.
Compliance: All substitute parts must maintain RoHS3 compliance and REACH unaffected status.
Parameter Comparison
| Part Number | Manufacturer | Vdss (V) | Id @ 25°C (A) | Rds On Max @ 10V (mOhm) | Qg Max @ 10V (nC) | Power Dissipation (W) | Package | Status |
|---|---|---|---|---|---|---|---|---|
| IRF2805SPBF | Infineon | 55 | 135 | 4.7 @ 104A | 230 | 200 | D2PAK | Discontinued |
| STB150NF55T4 | STMicroelectronics | 55 | 120 | 6.0 @ 60A | 190 | 300 | D2PAK | Active |
| IPB100N06S205ATMA4 | Infineon | 55 | 100 | 4.7 @ 80A | 170 | 300 | TO-263-3 | Obsolete |
| BUK764R0-55B,118 | Nexperia | 55 | 75 | 4.0 @ 25A | 86 | 300 | D2PAK | Active |
| PSMN4R6-60BS,118 | Nexperia | 60 | 100 | 4.4 @ 25A | 70.8 | 211 | D2PAK | Active |
| FDB050AN06A0 | onsemi | 60 | 80 | 5.0 @ 80A | 80 | 245 | D2PAK | Active |
| STB160N75F3 | STMicroelectronics | 75 | 120 | 4.0 @ 60A | 85 | 330 | D2PAK | Active |
| IXTA170N075T2 | IXYS | 75 | 170 | 5.4 @ 50A | 109 | 360 | TO-263 | Active |
| IXFA230N075T2-7 | IXYS | 75 | 230 | 4.2 @ 50A | 178 | 480 | TO-263-7 | Active |
| IXTA230N075T2-7 | IXYS | 75 | 230 | 4.2 @ 50A | 178 | 480 | TO-263-7 | Active |
Engineering Selection Recommendations
Primary Substitutes (Same Voltage Rating, Active Status):
STB150NF55T4 from STMicroelectronics is the recommended primary substitute. It maintains the 55V voltage rating, supports 120A continuous drain current, and is currently in active production status. The slightly higher on-state resistance (6.0mOhm vs. 4.7mOhm) is offset by superior power dissipation capability (300W vs. 200W). This part is suitable for applications where the 135A rating of the original is not fully utilized.
Secondary Substitutes (Higher Voltage Rating, Active Status):
STB160N75F3 from STMicroelectronics provides a 75V rating with 120A continuous drain current and improved on-state resistance (4.0mOhm). The higher voltage rating provides additional design margin for transient overvoltage conditions. This part is recommended for applications requiring enhanced voltage headroom.
IXTA170N075T2 from IXYS offers 75V rating with 170A continuous drain current, exceeding the original 135A specification. This part is suitable for applications requiring higher current capacity or future design scaling.
Lower Current Alternatives (Active Status):
BUK764R0-55B,118 from Nexperia maintains the 55V rating but supports only 75A continuous drain current. This part is suitable for applications where the full 135A capability is not required. It features AEC-Q101 automotive qualification.
PSMN4R6-60BS,118 from Nexperia provides 60V rating with 100A continuous drain current. This part is suitable for moderate current applications and offers active production status.
FDB050AN06A0 from onsemi provides 60V rating with 80A continuous drain current. This part is suitable for lower current applications and is currently in active production.
Higher Current Alternatives (Active Status, Package Consideration):
IXFA230N075T2-7 and IXTA230N075T2-7 from IXYS both provide 75V rating with 230A continuous drain current. These parts use TO-263-7 package variants with additional leads, requiring PCB layout modification. They are suitable for applications requiring significantly higher current capacity.
Compliance Status:
All recommended substitutes maintain RoHS3 compliance and REACH unaffected status, consistent with the original IRF2805SPBF specifications.
Frequently Asked Questions (FAQ)
Q: Can I use a substitute part with a lower current rating than the original 135A?
A: Yes, if your application does not require the full 135A capability. Parts such as STB150NF55T4 (120A), BUK764R0-55B,118 (75A), and FDB050AN06A0 (80A) are suitable for lower current applications. Verify that your circuit's maximum operating current does not exceed the substitute part's continuous drain current rating.
Q: What is the significance of the voltage rating difference between 55V and 75V?
A: The IRF2805SPBF is rated for 55V maximum drain-to-source voltage. Substitute parts rated at 60V or 75V provide higher voltage margin and can be used in 55V applications without derating. However, they cannot be used in applications exceeding their rated voltage. A 75V-rated part provides additional protection against transient overvoltage conditions.
Q: Are the IXFA230N075T2-7 and IXTA230N075T2-7 direct pin-for-pin replacements?
A: No. These parts use TO-263-7 package variants with additional leads compared to the D2PAK (TO-263-3) package of the original IRF2805SPBF. PCB layout modification is required to accommodate the different pin configuration. Verify pinout compatibility before substitution.
Q: What does the on-state resistance (Rds On) parameter mean for substitution?
A: On-state resistance determines the voltage drop across the transistor when conducting current. Lower Rds On values result in lower power dissipation and reduced heat generation. The IRF2805SPBF specifies 4.7mOhm at 104A and 10V gate drive. Substitute parts with comparable or lower Rds On values maintain similar thermal performance. Higher Rds On values increase power dissipation and may require enhanced thermal management.
Q: Can I substitute a part with higher power dissipation rating?
A: Yes. Higher power dissipation ratings indicate improved thermal capability. Parts such as STB150NF55T4 (300W vs. 200W) and STB160N75F3 (330W vs. 200W) provide enhanced thermal performance and are suitable substitutes. This is particularly beneficial in high-frequency switching applications where thermal management is critical.
Q: What is gate charge (Qg) and why does it matter for substitution?
A: Gate charge represents the total charge required to switch the transistor from off to on state. The IRF2805SPBF specifies 230nC at 10V. Substitute parts with lower gate charge values (such as BUK764R0-55B,118 at 86nC) switch faster and reduce gate driver power consumption. Parts with higher gate charge values require more gate driver current but are still compatible with standard gate driver circuits.
Q: Are all substitute parts RoHS3 compliant?
A: Yes. All substitute parts listed in this reference maintain RoHS3 compliance and REACH unaffected status, consistent with the original IRF2805SPBF specifications.
Q: What is the difference between Tc and Ta current ratings?
A: Tc (case temperature) ratings specify continuous drain current at a fixed case temperature, typically 25°C. Ta (ambient temperature) ratings specify continuous drain current at a fixed ambient temperature. The FDB050AN06A0 specifies both 18A (Ta) and 80A (Tc), indicating that the 80A rating applies at 25°C case temperature. For thermal design purposes, use the Tc rating as the reference for continuous operation.
Q: Can I use STB150NF55T4 as a direct replacement for the IRF2805SPBF?
A: Yes, with application verification. Both parts maintain 55V rating, D2PAK package compatibility, and -55°C to 175°C operating temperature range. The STB150NF55T4 supports 120A continuous drain current versus the original 135A. If your circuit operates below 120A, this part is a direct substitute. If your circuit requires the full 135A capability, select a higher-rated alternative such as IXTA170N075T2 (170A) or IXFA230N075T2-7 (230A).
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