IRF2805LPBF N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRF2805LPBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 55V drain-to-source voltage with 135A continuous drain current at 25°C. This device features a TO-262 through-hole package and is designed for high-current switching applications with a maximum power dissipation of 200W at the case temperature. The IRF2805LPBF is classified as obsolete, making identification of equivalent and substitute parts essential for ongoing design support and production continuity. Substitute parts must maintain electrical compatibility within the specified parameter ranges while accommodating the through-hole TO-262 package format.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	55	V
Continuous Drain Current (Id) @ 25°C	135	A
On-State Resistance (Rds On Max) @ 104A, 10V	4.7	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ 250µA	4	V
Gate Charge (Qg Max) @ 10V	230	nC
Power Dissipation (Max)	200	W
Operating Temperature Range	-55 to 175	°C
Package Type	TO-262-3	Through Hole

Substitute Part Grouping Explanation

Substitution of the IRF2805LPBF is determined by the following critical electrical and mechanical parameters:

Voltage Rating Compatibility: Substitute parts must have a Vdss rating equal to or greater than 55V. Parts rated at 60V are acceptable as they provide voltage margin while maintaining the same switching characteristics within the application's design envelope.

Current Rating Compatibility: The continuous drain current (Id) of substitute parts must be equal to or greater than 135A at 25°C to ensure the device can handle the same load conditions. Parts rated at 120A represent a reduction in current capacity and are acceptable only when the application's actual current demand does not exceed this lower rating.

On-State Resistance (Rds On): Substitute parts must have Rds On values equal to or lower than the original specification to maintain or improve switching efficiency and thermal performance. Lower Rds On values reduce power dissipation and heat generation.

Package and Mounting: All substitute parts must use the TO-262 through-hole package format to ensure mechanical and electrical compatibility with existing PCB layouts and assembly processes.

Gate Charge and Input Capacitance: These parameters affect switching speed and gate drive requirements. Substitute parts with lower gate charge values improve switching performance and reduce drive circuit stress.

Temperature Range: Operating temperature range must be -55°C to 175°C or better to maintain compatibility with the original design specifications.

Parameter Comparison

Parameter	IRF2805LPBF	IRFSL3206PBF	IRFSL3306PBF	NP89N055NUK-S18-AY
Manufacturer	Infineon	Infineon	Infineon	Renesas
Vdss (V)	55	60	60	55
Id @ 25°C (A)	135	120	120	90
Rds On Max (mOhm)	4.7 @ 104A	3.0 @ 75A	4.2 @ 75A	4.4 @ 45A
Vgs(th) Max (V)	4	4	4	4
Qg Max (nC)	230	170	120	102
Power Dissipation Max (W)	200	300	230	147
Operating Temp Range (°C)	-55 to 175	-55 to 175	-55 to 175	to 175
Package	TO-262-3	TO-262-3	TO-262-3	TO-262-3
Product Status	Obsolete	Active	Active	Active

Engineering Selection Recommendations

IRFSL3206PBF (Infineon Technologies): This part is classified as Active and RoHS3 Compliant. It provides a 60V voltage rating with 120A continuous drain current, representing a 5V voltage margin over the original specification. The Rds On value of 3.0 mOhm at 75A is superior to the IRF2805LPBF, resulting in lower power dissipation. Gate charge is reduced to 170 nC, improving switching performance. Power dissipation capability is increased to 300W. This part is suitable for applications where the actual current demand does not exceed 120A and where improved thermal performance is beneficial.

IRFSL3306PBF (Infineon Technologies): This part is classified as Active and RoHS3 Compliant. It provides a 60V voltage rating with 120A continuous drain current. The Rds On value of 4.2 mOhm at 75A is comparable to the original specification. Gate charge is significantly reduced to 120 nC, providing improved switching speed. Power dissipation capability is 230W, exceeding the original 200W rating. This part is suitable for applications where current demand does not exceed 120A and where reduced gate charge is advantageous for gate drive circuit optimization.

NP89N055NUK-S18-AY (Renesas Electronics Corporation): This part is classified as Active and RoHS3 Compliant. It maintains the 55V voltage rating matching the original specification. However, the continuous drain current is reduced to 90A, representing a significant reduction from the original 135A rating. The Rds On value of 4.4 mOhm at 45A is comparable to the original. Gate charge is reduced to 102 nC. Power dissipation capability is 147W, below the original 200W rating. This part is suitable only for applications where the actual current demand does not exceed 90A.

Frequently Asked Questions (FAQ)

Q: Can IRFSL3206PBF directly replace IRF2805LPBF in all applications?

A: IRFSL3206PBF can replace IRF2805LPBF in applications where the continuous drain current requirement does not exceed 120A. The higher voltage rating (60V vs. 55V) and improved Rds On characteristics make it suitable for most switching applications. Verify that your application's actual current demand is within the 120A limit before substitution.

Q: What is the difference between IRFSL3206PBF and IRFSL3306PBF?

A: Both parts share identical voltage (60V) and current (120A) ratings. The primary differences are in Rds On (3.0 mOhm vs. 4.2 mOhm), gate charge (170 nC vs. 120 nC), and power dissipation (300W vs. 230W). IRFSL3206PBF offers lower on-state resistance and higher power dissipation capability. IRFSL3306PBF offers lower gate charge for faster switching. Select based on your specific thermal and switching speed requirements.

Q: Is NP89N055NUK-S18-AY suitable as a substitute?

A: NP89N055NUK-S18-AY maintains the 55V voltage rating but reduces continuous drain current to 90A. This part is suitable only if your application's actual current demand does not exceed 90A. The reduced power dissipation rating (147W) and lower current capacity make it unsuitable for applications requiring the full 135A capability of the original IRF2805LPBF.

Q: Are all substitute parts available in the same TO-262 package?

A: Yes, all substitute parts listed are available in the TO-262-3 through-hole package format, ensuring mechanical and electrical compatibility with existing PCB layouts designed for the IRF2805LPBF.

Q: What is the significance of the reduced gate charge in substitute parts?

A: Reduced gate charge (Qg) values in IRFSL3206PBF, IRFSL3306PBF, and NP89N055NUK-S18-AY result in faster switching transitions and lower gate drive circuit stress. This allows for higher switching frequencies and improved overall system efficiency. Gate drive circuits may require adjustment to optimize performance with the lower gate charge values.

Q: Are the substitute parts RoHS compliant?

A: IRFSL3206PBF and IRFSL3306PBF are RoHS3 Compliant. NP89N055NUK-S18-AY is RoHS3 Compliant. All substitute parts meet current environmental compliance requirements.

Q: What is the product status significance?

A: The IRF2805LPBF is classified as Obsolete, meaning it is no longer in active production. The substitute parts (IRFSL3206PBF, IRFSL3306PBF, and NP89N055NUK-S18-AY) are all classified as Active, ensuring long-term availability and continued manufacturing support for new designs and production runs.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message