IRF2804STRL-7P Equivalent & Substitute Parts

Part Overview

The IRF2804STRL-7P is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 40V drain-to-source voltage with 160A continuous drain current at 25°C. This device is packaged in a D2PAK (TO-263-7) surface mount configuration and is designed for high-current switching applications requiring low on-resistance performance.

The IRF2804STRL-7P is classified as an obsolete product. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications utilizing this component.

Substiute Parts

IRF2804STRL-7P
Infineon TechnologiesIn Stock: 1512IRF2804STRL-7P Datasheet
IRF2804STRL-7P
Current Part
IPB180N04S401ATMA1
Infineon TechnologiesIn Stock: 2269IPB180N04S401ATMA1 Datasheet
IPB180N04S401ATMA1
MFR Recommended
FDB016N04AL7
onsemiIn Stock: 1696FDB016N04AL7 Datasheet
FDB016N04AL7
MFR Recommended
IXTA300N04T2-7
IXYSIn Stock: 906IXTA300N04T2-7 Datasheet
IXTA300N04T2-7
MFR Recommended
NP100N04PUK-E1-AY
Renesas Electronics CorporationIn Stock: 25384NP100N04PUK-E1-AY Datasheet
NP100N04PUK-E1-AY
MFR Recommended
SQM120N04-1M9_GE3
Vishay SiliconixIn Stock: 1254SQM120N04-1M9_GE3 Datasheet
SQM120N04-1M9_GE3
MFR Recommended
STH320N4F6-6
STMicroelectronicsIn Stock: 25442STH320N4F6-6 Datasheet
STH320N4F6-6
MFR Recommended

Key Parameters

Parameter Value Unit
Drain-to-Source Voltage (Vdss) 40 V
Continuous Drain Current (Id) @ 25°C 160 A (Tc)
On-Resistance (Rds On Max) @ 160A, 10V 1.6 mOhm
Gate Threshold Voltage (Vgs(th) Max) @ 250µA 4 V
Gate Charge (Qg Max) @ 10V 260 nC
Power Dissipation (Max) 330 W (Tc)
Operating Temperature Range -55 to 175 °C (TJ)
Package Type D2PAK (TO-263-7) Surface Mount
FET Type N-Channel MOSFET

Substitute Part Grouping Explanation

Substitution of the IRF2804STRL-7P is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

  • Drain-to-Source Voltage (Vdss): Must equal 40V
  • FET Type: Must be N-Channel MOSFET
  • Package: Must be surface mount D2PAK or equivalent TO-263-7 configuration
  • Operating Temperature Range: Must support -55°C to 175°C (TJ)
  • Continuous Drain Current (Id): Must meet or exceed 160A at 25°C

Secondary Compatibility Parameters:

  • On-Resistance (Rds On): Lower or equal values indicate improved performance
  • Gate Charge (Qg): Lower values reduce gate drive requirements
  • Power Dissipation: Must support thermal requirements of the application
  • Gate Threshold Voltage (Vgs(th)): Must be compatible with gate drive circuitry

Substitute parts are grouped based on whether they meet the primary criteria while maintaining electrical compatibility within the specified parameter ranges.

Parameter Comparison

Parameter IRF2804STRL-7P IPB180N04S401ATMA1 FDB016N04AL7 IXTA300N04T2-7 NP100N04PUK-E1-AY SQM120N04-1M9_GE3 STH320N4F6-6
Manufacturer Infineon Infineon onsemi IXYS Renesas Vishay STMicroelectronics
Vdss (V) 40 40 40 40 40 40 40
Id @ 25°C (A) 160 180 160 300 100 120 200
Rds On Max (mOhm) 1.6 @ 160A 1.3 @ 100A 1.6 @ 80A 2.5 @ 50A 2.3 @ 50A 1.9 @ 30A 1.3 @ 80A
Qg Max (nC) 260 @ 10V 176 @ 10V 167 @ 10V 145 @ 10V 120 @ 10V 270 @ 10V 240 @ 10V
Vgs(th) Max (V) 4 @ 250µA 4 @ 140µA 3 @ 250µA 4 @ 250µA 3.5 @ 250µA 4 @ 250µA
Power Dissipation Max (W) 330 188 283 480 176 300 300
Operating Temp (°C) -55 to 175 -55 to 175 -55 to 175 -55 to 175 to 175 -55 to 175 -55 to 175
Package D2PAK (TO-263-7) PG-TO263-7-3 TO-263-7 TO-263-7 (IXTA) TO-263 TO-263 (D2PAK) H2PAK-6
Product Status Obsolete Active Obsolete Active Active Active Active
RoHS Compliance Non-compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

Primary Substitutes (Highest Compatibility):

IPB180N04S401ATMA1 (Infineon OptiMOS™ Series) is the manufacturer-recommended substitute. This part maintains the same 40V Vdss rating and exceeds the 160A continuous drain current requirement at 180A. The device is in active product status with ROHS3 compliance. The lower on-resistance of 1.3mOhm at 100A and reduced gate charge of 176nC provide improved switching efficiency compared to the original part. The PG-TO263-7-3 package is mechanically and electrically compatible with the D2PAK footprint.

FDB016N04AL7 (onsemi PowerTrench® Series) provides direct electrical equivalence with 40V Vdss and 160A continuous drain current. This part matches the original on-resistance specification of 1.6mOhm and maintains the same operating temperature range. Although classified as obsolete, it offers identical electrical performance and TO-263-7 package compatibility. ROHS3 compliance is confirmed.

Secondary Substitutes (Performance Enhancement):

STH320N4F6-6 (STMicroelectronics STripFET™ VI Series) offers 200A continuous drain current in an H2PAK-6 package with 40V Vdss rating. The 1.3mOhm on-resistance at 80A and 240nC gate charge provide improved switching characteristics. This device carries AEC-Q101 automotive qualification and ROHS3 compliance. The H2PAK-6 package requires PCB layout verification for mechanical compatibility.

IXTA300N04T2-7 (IXYS TrenchT2™ Series) provides the highest current rating at 300A continuous drain current with 40V Vdss. This part is suitable for applications requiring higher current capacity with improved thermal performance. The 480W power dissipation rating and active product status support long-term availability. ROHS3 compliance is confirmed.

Limited Substitutes (Current Derating Required):

NP100N04PUK-E1-AY (Renesas Electronics) and SQM120N04-1M9_GE3 (Vishay TrenchFET® Series) provide reduced continuous drain current ratings of 100A and 120A respectively. These parts are suitable only for applications where the 160A requirement can be derated or where parallel configurations are implemented. Both devices maintain 40V Vdss and full operating temperature range compatibility with ROHS3 compliance.

Frequently Asked Questions (FAQ)

Q: Can the IPB180N04S401ATMA1 directly replace the IRF2804STRL-7P without circuit modifications?

A: Yes. The IPB180N04S401ATMA1 maintains the same 40V Vdss rating, exceeds the 160A continuous drain current requirement, and is packaged in a mechanically compatible PG-TO263-7-3 configuration. The lower on-resistance and gate charge provide improved performance without requiring circuit redesign. Verify gate drive voltage compatibility with your existing circuitry.

Q: What is the primary difference between the D2PAK and H2PAK-6 packages?

A: The D2PAK (TO-263-7) is a 7-lead surface mount package, while the H2PAK-6 is a 6-lead variant. Both are thermally enhanced packages suitable for high-current applications. The H2PAK-6 used in the STH320N4F6-6 requires verification of PCB footprint compatibility before implementation.

Q: Why is the FDB016N04AL7 listed as obsolete if it is electrically equivalent?

A: The FDB016N04AL7 is classified as obsolete by onsemi, indicating it is no longer in active production. While electrically equivalent to the IRF2804STRL-7P, long-term supply availability cannot be guaranteed. The IPB180N04S401ATMA1 is recommended for new designs due to its active product status.

Q: Can I use the NP100N04PUK-E1-AY as a direct replacement?

A: No. The NP100N04PUK-E1-AY is rated for 100A continuous drain current, which is 60A below the IRF2804STRL-7P specification. This part is suitable only for applications where current requirements can be reduced or where multiple devices are paralleled to achieve the required current capacity.

Q: What does ROHS3 compliance mean for component selection?

A: ROHS3 compliance indicates the device meets Restriction of Hazardous Substances Directive requirements, restricting lead, cadmium, mercury, and other hazardous materials. The IRF2804STRL-7P is non-compliant, while all listed substitutes are ROHS3 compliant, making them suitable for applications with environmental or regulatory requirements.

Q: How do gate charge differences affect circuit performance?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. Lower gate charge values reduce switching losses and allow faster switching speeds. The IPB180N04S401ATMA1 (176nC) and FDB016N04AL7 (167nC) have lower gate charge than the original part (260nC), resulting in improved efficiency and reduced heat generation in gate drive circuits.

Q: Is the IXTA300N04T2-7 suitable for all applications using the IRF2804STRL-7P?

A: The IXTA300N04T2-7 is electrically compatible with 40V Vdss and exceeds current requirements at 300A. However, the higher current rating and different on-resistance characteristics may affect circuit behavior in current-limiting or protection circuits. Verify that your application design does not depend on the specific current or thermal characteristics of the original part.

Q: What is the significance of the operating temperature range -55°C to 175°C?

A: This range specifies the junction temperature limits for reliable device operation. All listed substitutes maintain this range, ensuring compatibility with applications operating across industrial and automotive temperature extremes. Verify that your thermal management design maintains junction temperature within this specification.

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