IRF2204LPBF Equivalent & Substitute Parts Reference

Part Overview

The IRF2204LPBF is an N-Channel MOSFET from Infineon Technologies, classified in the Transistors, FETs, MOSFETs category. Key electrical characteristics include a Drain to Source Voltage (Vdss) of 40 V, a continuous drain current (Id) of 170A at 25°C, and a maximum power dissipation of 200 W. The device utilizes HEXFET® technology, supports through-hole mounting, and is supplied in a TO-262 package. The part is listed as Obsolete, making it necessary to identify equivalent models for continued designs and field replacements.

Substiute Parts

IRF2204LPBF
Infineon TechnologiesIn Stock: 5754IRF2204LPBF Datasheet
IRF2204LPBF
Current Part
STB120N4F6
STMicroelectronicsIn Stock: 15166STB120N4F6 Datasheet
STB120N4F6
MFR Recommended
STI270N4F3
STMicroelectronicsIn Stock: 1686STI270N4F3 Datasheet
STI270N4F3
MFR Recommended

Key Parameters

ParameterValue
Manufacturer Part NumberIRF2204LPBF
CategoryTransistors, FETs, MOSFETs
FET TypeN-Channel
Drain to Source Voltage (Vdss)40 V
Current - Continuous Drain (Id) @ 25°C170A (Tc)
Rds On (Max) @ Id, Vgs3.6mOhm @ 130A, 10V
Gate Charge (Qg) (Max) @ Vgs200 nC @ 10 V
Vgs(th) (Max) @ Id4V @ 250µA
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5890 pF @ 25 V
Power Dissipation (Max)200W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-262
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
Moisture Sensitivity Level (MSL)1 (Unlimited)
REACH StatusREACH Unaffected
ECCNEAR99
HTSUS8541.29.0095
Part StatusObsolete

Substitute Part Grouping Explanation

Substitution candidates are identified strictly based on critical parameters matching the main part number IRF2204LPBF. These parameters include FET type (N-Channel), Drain to Source Voltage (Vdss), Gate Threshold Voltage (Vgs(th)), maximum gate voltage (Vgs), Rds On (Max) under specified conditions, Gate Charge (Qg), power dissipation, mounting type, and package/case compatibility. Only models conforming to these criteria and explicitly listed as substitutes in provided data are included.

Parameter Comparison

Parameter IRF2204LPBF STB120N4F6 STI270N4F3
Manufacturer Infineon Technologies STMicroelectronics STMicroelectronics
Category Transistors, FETs, MOSFETs Transistors, FETs, MOSFETs Transistors, FETs, MOSFETs
Part Status Obsolete Active Obsolete
FET Type N-Channel N-Channel N-Channel
Drain to Source Voltage (Vdss) 40 V 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 170A (Tc) 80A (Tc) 160A (Tc)
Rds On (Max) @ Id, Vgs 3.6mOhm @ 130A, 10V 4mOhm @ 40A, 10V 2.6mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA
Vgs (Max) ±20V ±20V ±20V
Gate Charge (Qg) (Max) @ Vgs 200 nC @ 10 V 65 nC @ 10 V 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 5890 pF @ 25 V 3850 pF @ 25 V 7400 pF @ 25 V
Power Dissipation (Max) 200W (Tc) 110W (Tc) 330W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Surface Mount Through Hole
Supplier Device Package TO-262 TO-263 (D2PAK) I2PAK
Package / Case TO-262-3 Long Leads, I2PAK, TO-262AA TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-262-3 Long Leads, I2PAK, TO-262AA
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)
REACH Status REACH Unaffected REACH Unaffected REACH Unaffected
ECCN EAR99 EAR99 EAR99
HTSUS 8541.29.0095 8541.29.0095 8541.29.0095

Engineering Selection Recommendations

Selection between IRF2204LPBF and substitute parts should consider product status. IRF2204LPBF and STI270N4F3 are classified as Obsolete. STB120N4F6 is listed as Active. All compared parts are AEC-Q101 qualified and have Moisture Sensitivity Level (MSL) 1 (Unlimited). REACH Status is Unaffected and ECCN is EAR99 for all listed devices. Package compatibility, mounting type, and category parameters must be matched as provided for the application.

Frequently Asked Questions (FAQ)

Q1: What are the primary criteria for substituting IRF2204LPBF in my design?
A1: Substitute devices must match key parameters: FET type (N-Channel), Drain to Source Voltage (Vdss), Gate Threshold Voltage (Vgs(th)), maximum gate voltage (Vgs), Rds On (Max), Gate Charge (Qg), power dissipation, and package/mounting type, as provided.

Q2: How do I align mounting type and package specifications when substituting?
A2: IRF2204LPBF and STI270N4F3 utilize through-hole mounting and TO-262/I2PAK packages. STB120N4F6 provides surface mount capability in TO-263 (D2PAK), requiring design consideration for PCB compatibility if SMD is selected.

Q3: Are all listed substitutes compliant with current RoHS and REACH regulations?
A3: Provided substitutes indicate ROHS3 compliance and REACH Unaffected status, ensuring regulatory compatibility.

Q4: What do differences in continuous drain current and power dissipation indicate for selection?
A4: Selection must correspond with application requirements. Substitute parts differ in continuous drain current and power dissipation; ensure these match the system's thermal and electrical limits as per provided specifications.

Q5: Are the substitute models identical in electrical performance to IRF2204LPBF?
A5: Substitute parts conform to allowed electrical parameters for the category but specified values (such as current rating and Rds On) may vary. Refer to the comparison table to match relevant system criteria.

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