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IRF2204LPBF Equivalent & Substitute Parts Reference
Part Overview
The IRF2204LPBF is an N-Channel MOSFET from Infineon Technologies, classified in the Transistors, FETs, MOSFETs category. Key electrical characteristics include a Drain to Source Voltage (Vdss) of 40 V, a continuous drain current (Id) of 170A at 25°C, and a maximum power dissipation of 200 W. The device utilizes HEXFET® technology, supports through-hole mounting, and is supplied in a TO-262 package. The part is listed as Obsolete, making it necessary to identify equivalent models for continued designs and field replacements.
Substiute Parts
Key Parameters
| Parameter | Value |
|---|---|
| Manufacturer Part Number | IRF2204LPBF |
| Category | Transistors, FETs, MOSFETs |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 40 V |
| Current - Continuous Drain (Id) @ 25°C | 170A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.6mOhm @ 130A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 200 nC @ 10 V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 5890 pF @ 25 V |
| Power Dissipation (Max) | 200W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-262 |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Part Status | Obsolete |
Substitute Part Grouping Explanation
Substitution candidates are identified strictly based on critical parameters matching the main part number IRF2204LPBF. These parameters include FET type (N-Channel), Drain to Source Voltage (Vdss), Gate Threshold Voltage (Vgs(th)), maximum gate voltage (Vgs), Rds On (Max) under specified conditions, Gate Charge (Qg), power dissipation, mounting type, and package/case compatibility. Only models conforming to these criteria and explicitly listed as substitutes in provided data are included.
Parameter Comparison
| Parameter | IRF2204LPBF | STB120N4F6 | STI270N4F3 |
|---|---|---|---|
| Manufacturer | Infineon Technologies | STMicroelectronics | STMicroelectronics |
| Category | Transistors, FETs, MOSFETs | Transistors, FETs, MOSFETs | Transistors, FETs, MOSFETs |
| Part Status | Obsolete | Active | Obsolete |
| FET Type | N-Channel | N-Channel | N-Channel |
| Drain to Source Voltage (Vdss) | 40 V | 40 V | 40 V |
| Current - Continuous Drain (Id) @ 25°C | 170A (Tc) | 80A (Tc) | 160A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.6mOhm @ 130A, 10V | 4mOhm @ 40A, 10V | 2.6mOhm @ 80A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA |
| Vgs (Max) | ±20V | ±20V | ±20V |
| Gate Charge (Qg) (Max) @ Vgs | 200 nC @ 10 V | 65 nC @ 10 V | 150 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5890 pF @ 25 V | 3850 pF @ 25 V | 7400 pF @ 25 V |
| Power Dissipation (Max) | 200W (Tc) | 110W (Tc) | 330W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole | Surface Mount | Through Hole |
| Supplier Device Package | TO-262 | TO-263 (D2PAK) | I2PAK |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) |
| REACH Status | REACH Unaffected | REACH Unaffected | REACH Unaffected |
| ECCN | EAR99 | EAR99 | EAR99 |
| HTSUS | 8541.29.0095 | 8541.29.0095 | 8541.29.0095 |
Engineering Selection Recommendations
Selection between IRF2204LPBF and substitute parts should consider product status. IRF2204LPBF and STI270N4F3 are classified as Obsolete. STB120N4F6 is listed as Active. All compared parts are AEC-Q101 qualified and have Moisture Sensitivity Level (MSL) 1 (Unlimited). REACH Status is Unaffected and ECCN is EAR99 for all listed devices. Package compatibility, mounting type, and category parameters must be matched as provided for the application.
Frequently Asked Questions (FAQ)
Q1: What are the primary criteria for substituting IRF2204LPBF in my design?
A1: Substitute devices must match key parameters: FET type (N-Channel), Drain to Source Voltage (Vdss), Gate Threshold Voltage (Vgs(th)), maximum gate voltage (Vgs), Rds On (Max), Gate Charge (Qg), power dissipation, and package/mounting type, as provided.
Q2: How do I align mounting type and package specifications when substituting?
A2: IRF2204LPBF and STI270N4F3 utilize through-hole mounting and TO-262/I2PAK packages. STB120N4F6 provides surface mount capability in TO-263 (D2PAK), requiring design consideration for PCB compatibility if SMD is selected.
Q3: Are all listed substitutes compliant with current RoHS and REACH regulations?
A3: Provided substitutes indicate ROHS3 compliance and REACH Unaffected status, ensuring regulatory compatibility.
Q4: What do differences in continuous drain current and power dissipation indicate for selection?
A4: Selection must correspond with application requirements. Substitute parts differ in continuous drain current and power dissipation; ensure these match the system's thermal and electrical limits as per provided specifications.
Q5: Are the substitute models identical in electrical performance to IRF2204LPBF?
A5: Substitute parts conform to allowed electrical parameters for the category but specified values (such as current rating and Rds On) may vary. Refer to the comparison table to match relevant system criteria.
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