IRF1607PBF N-Channel MOSFET 75V 142A TO-220AB Equivalent & Substitute Parts

Part Overview

The IRF1607PBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 75V drain-to-source voltage with 142A continuous drain current at 25°C. This device features the HEXFET® series technology in a through-hole TO-220AB package and is designed for high-current switching applications. The part is currently classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and production continuity. With 2100 pieces in current inventory, alternative active components are required for new designs and long-term availability assurance.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	75	V
Continuous Drain Current (Id) @ 25°C	142	A (Tc)
On-State Resistance (Rds On) @ 85A, 10V	7.5	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	320	nC
Power Dissipation (Max)	380	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	TO-220AB	Through Hole
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—

Substitute Part Grouping Explanation

Substitution of the IRF1607PBF is determined by strict alignment of the following electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 75V
Continuous Drain Current (Id): Must equal or exceed 142A at 25°C
Package Type: TO-220AB through-hole mounting preferred for direct mechanical compatibility
FET Type: N-Channel only
Technology: MOSFET (Metal Oxide)
Operating Temperature Range: Must support -55°C to 175°C (TJ)
Gate Threshold Voltage (Vgs(th)): Must be compatible with 4V @ 250µA specification
Maximum Gate Voltage (Vgs): Must support ±20V

Secondary Compatibility Parameters:

On-State Resistance (Rds On): Lower values indicate improved performance; values at or below 7.5mOhm @ specified current are preferred
Gate Charge (Qg): Lower values reduce switching losses; reference 320nC @ 10V
Power Dissipation: Minimum 380W (Tc) for thermal equivalence
RoHS3 Compliance and REACH Unaffected status required for regulatory alignment

Substitute parts are grouped into two categories: Direct Infineon HEXFET® Series Substitutes (same manufacturer, same series technology) and Cross-Manufacturer Alternatives (different manufacturers meeting equivalent electrical specifications).

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Pd Max (W)	Package	Status
IRF1607PBF	Infineon	75	142 (Tc)	7.5 @ 85A, 10V	320 @ 10V	380 (Tc)	TO-220AB	Obsolete
IRFB3077PBF	Infineon	75	120 (Tc)	3.3 @ 75A, 10V	220 @ 10V	370 (Tc)	TO-220AB	Active
IRFB3207ZPBF	Infineon	75	120 (Tc)	4.1 @ 75A, 10V	170 @ 10V	300 (Tc)	TO-220AB	Active
IRFB3307ZPBF	Infineon	75	120 (Tc)	5.8 @ 75A, 10V	110 @ 10V	230 (Tc)	TO-220AB	Active
CSD19501KCS	Texas Instruments	80	100 (Ta)	6.6 @ 60A, 10V	50 @ 10V	217 (Tc)	TO-220-3	Active
FDP060AN08A0	onsemi	75	80 (Tc)	6 @ 80A, 10V	95 @ 10V	255 (Tc)	TO-220-3	Active
AOT2606L	Alpha & Omega	60	72 (Tc)	6.5 @ 20A, 10V	75 @ 10V	115 (Tc)	TO-220	Active
BUK9608-55B,118	Nexperia	55	75 (Tc)	7 @ 25A, 10V	45 @ 5V	203 (Tc)	D2PAK	Active
PSMN012-80PS,127	Nexperia	80	74 (Tc)	11 @ 15A, 10V	43 @ 10V	148 (Tc)	TO-220AB	Obsolete
PSMN017-80PS,127	Nexperia	80	50 (Tc)	17 @ 10A, 10V	26 @ 10V	103 (Tc)	TO-220AB	Obsolete
IRF2907ZPBF	International Rectifier	—	—	—	—	—	—	Active

Engineering Selection Recommendations

Tier 1: Direct Infineon HEXFET® Series Substitutes (Recommended for Design Continuity)

The IRFB3077PBF, IRFB3207ZPBF, and IRFB3307ZPBF are active Infineon HEXFET® series components with identical 75V Vdss rating and TO-220AB package compatibility. These parts maintain the same manufacturer ecosystem, series technology, and thermal management characteristics as the IRF1607PBF. All three are RoHS3 compliant and REACH unaffected.

IRFB3077PBF: 120A continuous drain current, 3.3mOhm Rds On, 370W power dissipation. Suitable for applications where the 142A requirement can be met through parallel configurations or where current demand is lower.
IRFB3207ZPBF: 120A continuous drain current, 4.1mOhm Rds On, 300W power dissipation. Offers moderate on-state resistance with reduced power dissipation.
IRFB3307ZPBF: 120A continuous drain current, 5.8mOhm Rds On, 230W power dissipation. Provides the lowest power dissipation among Infineon alternatives; suitable for lower thermal budget applications.

Tier 2: Cross-Manufacturer Active Alternatives

CSD19501KCS (Texas Instruments NexFET™): 80V Vdss, 100A continuous drain current, 6.6mOhm Rds On, TO-220-3 package. Exceeds voltage rating; current rating below IRF1607PBF specification. Active product status with full compliance.
FDP060AN08A0 (onsemi PowerTrench®): 75V Vdss, 80A continuous drain current, 6mOhm Rds On, TO-220-3 package. Matches voltage rating; current rating below IRF1607PBF. Active product with full compliance.

Tier 3: Limited Substitution Candidates

AOT2606L (Alpha & Omega): 60V Vdss (below 75V requirement), 72A continuous drain current. Does not meet voltage specification for direct substitution.
BUK9608-55B,118 (Nexperia TrenchMOS™): 55V Vdss (below 75V requirement), D2PAK surface-mount package (incompatible with TO-220AB through-hole requirement). Automotive grade AEC-Q101 qualified.
PSMN012-80PS,127 and PSMN017-80PS,127 (Nexperia): Both obsolete status; current ratings (74A and 50A respectively) fall below IRF1607PBF specification.

Compliance and Certification Status

All recommended substitutes maintain RoHS3 compliance and REACH unaffected status, ensuring regulatory alignment with the original IRF1607PBF. Operating temperature ranges (-55°C to 175°C TJ) are consistent across all candidates.

Frequently Asked Questions (FAQ)

Q1: Can IRFB3077PBF, IRFB3207ZPBF, or IRFB3307ZPBF directly replace IRF1607PBF in existing designs?

A: These three Infineon HEXFET® parts share identical 75V Vdss rating, TO-220AB package, and operating temperature range. However, all three are rated for 120A continuous drain current versus the IRF1607PBF's 142A. Direct substitution is possible only if the application's actual current demand does not exceed 120A. For applications requiring the full 142A capability, parallel device configurations or alternative topologies must be evaluated.

Q2: What is the significance of the on-state resistance (Rds On) differences among the Infineon substitutes?

A: Rds On directly affects power dissipation and thermal performance. IRFB3077PBF (3.3mOhm) exhibits the lowest Rds On, resulting in lower conduction losses and reduced heat generation. IRFB3307ZPBF (5.8mOhm) has higher Rds On but lower overall power dissipation rating (230W vs. 380W for IRF1607PBF), indicating a different thermal design. Selection depends on thermal budget and efficiency requirements of the specific application.

Q3: Why are CSD19501KCS and FDP060AN08A0 listed as alternatives if their current ratings are lower than IRF1607PBF?

A: These parts are included as cross-manufacturer alternatives for applications where the full 142A capability is not required. CSD19501KCS offers 80V Vdss (exceeding the 75V requirement) with 100A capability, while FDP060AN08A0 matches the 75V Vdss with 80A capability. Both are active products with full regulatory compliance, making them suitable for lower-current variants of the same design family.

Q4: What is the difference between TO-220AB and TO-220-3 packages?

A: Both are through-hole packages with three leads (Gate, Drain, Source). TO-220AB and TO-220-3 are mechanically and electrically compatible for PCB mounting. The designation difference reflects manufacturer nomenclature; the physical footprint and thermal characteristics are equivalent. Substitution between these package variants is mechanically feasible.

Q5: Why are PSMN012-80PS,127 and PSMN017-80PS,127 not recommended despite TO-220AB compatibility?

A: Both parts carry obsolete product status, matching the IRF1607PBF's obsolescence. Additionally, their continuous drain current ratings (74A and 50A respectively) fall significantly below the 142A specification. These parts do not provide a viable path forward for new designs or production continuity.

Q6: Can AOT2606L or BUK9608-55B,118 be used as substitutes?

A: No. AOT2606L is rated for only 60V Vdss, which is below the 75V requirement and creates voltage margin risk. BUK9608-55B,118 is rated for 55V Vdss (insufficient voltage margin) and uses D2PAK surface-mount packaging, which is mechanically incompatible with the through-hole TO-220AB requirement. Neither part meets the electrical or mechanical substitution criteria.

Q7: What compliance certifications should be verified when selecting a substitute?

A: All recommended substitutes maintain RoHS3 compliance and REACH unaffected status, matching the IRF1607PBF's regulatory profile. For automotive applications, BUK9608-55B,118 carries AEC-Q101 qualification; however, this part does not meet the voltage and current specifications for general substitution. Verify compliance documentation with the component supplier before design implementation.

Q8: How does gate charge (Qg) affect device selection?

A: Gate charge determines the energy required to switch the device and influences switching speed and driver circuit design. IRF1607PBF specifies 320nC @ 10V. IRFB3307ZPBF (110nC) has significantly lower gate charge, reducing switching losses and allowing faster switching. IRFB3077PBF (220nC) and IRFB3207ZPBF (170nC) offer intermediate values. Lower gate charge is advantageous for high-frequency applications but does not affect DC current-carrying capability.

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