IRF1503STRRPBF N-Channel 30V 75A MOSFET Equivalent & Substitute Parts

Part Overview

The IRF1503STRRPBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 30V drain-to-source voltage and 75A continuous drain current in a D2PAK surface mount package. This device is classified as obsolete, necessitating identification of active equivalent and substitute parts for ongoing design support and procurement continuity. The part operates across a temperature range of -55°C to 175°C and features a maximum on-resistance of 3.3mOhm at 140A and 10V gate-source voltage.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C	75	A
On-Resistance (Rds On Max) @ 140A, 10V	3.3	mOhm
Gate-Source Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	200	nC
Power Dissipation (Max)	200	W
Operating Temperature Range	-55 to 175	°C
Package Type	D2PAK (TO-263-3)	—
Mounting Type	Surface Mount	—

Substitute Part Grouping Explanation

Substitution eligibility for the IRF1503STRRPBF is determined by the following mandatory parameters:

Primary Compatibility Criteria:

Drain-to-Source Voltage (Vdss): 30V minimum
Package Type: D2PAK (TO-263-3) surface mount configuration
Mounting Type: Surface mount
Operating Temperature Range: -55°C to 175°C minimum

Secondary Performance Criteria:

Continuous Drain Current (Id): Equal to or greater than 75A
On-Resistance (Rds On): Equal to or lower than specified values at rated conditions
Gate Charge (Qg): Lower values indicate improved switching performance
Power Dissipation: Sufficient thermal capability for application requirements

All identified substitute parts meet the primary compatibility criteria and maintain electrical performance within acceptable operating parameters for direct replacement applications.

Parameter Comparison

Parameter	IRF1503STRRPBF	IPB80N03S4L02ATMA1	PSMN2R7-30BL,118	PSMN3R4-30BL,118	PSMN4R3-30BL,118
Manufacturer	Infineon Technologies	Infineon Technologies	NXP USA Inc.	NXP USA Inc.	Nexperia USA Inc.
Vdss (V)	30	30	30	30	30
Id @ 25°C (A)	75	80	100	100	100
Rds On (Max) @ 10V (mOhm)	3.3 @ 140A	2.4 @ 80A	3.0 @ 25A	3.3 @ 25A	4.1 @ 15A
Vgs(th) (Max) (V)	4 @ 250µA	2.2 @ 90µA	2.15 @ 1mA	2.15 @ 1mA	2.15 @ 1mA
Gate Charge (Qg) @ 10V (nC)	200	140	66	64	41.5
Power Dissipation (Max) (W)	200	136	170	114	103
Operating Temperature (°C)	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175
Package	D2PAK (TO-263-3)	PG-TO263-3-2	D2PAK (TO-263-3)	D2PAK (TO-263-3)	D2PAK (TO-263-3)
Product Status	Obsolete	Active	Active	Active	Active

Engineering Selection Recommendations

IPB80N03S4L02ATMA1 (Infineon Technologies)

This part is an active product from the same manufacturer as the original IRF1503STRRPBF. It provides improved electrical performance with lower on-resistance (2.4mOhm vs. 3.3mOhm) and reduced gate charge (140nC vs. 200nC), resulting in lower switching losses. The continuous drain current rating of 80A exceeds the original 75A specification. This substitute is ROHS3 compliant and maintains identical voltage and temperature ratings. Recommended for applications prioritizing switching efficiency and thermal performance.

PSMN2R7-30BL,118 (NXP USA Inc.)

This NXP Nexperia part offers the highest continuous drain current rating at 100A with moderate on-resistance of 3.0mOhm. Gate charge is significantly reduced to 66nC, improving switching characteristics. Power dissipation capability of 170W supports higher thermal loads. This part is available in bulk packaging with substantial inventory. Suitable for applications requiring higher current capacity and improved switching performance.

PSMN3R4-30BL,118 (NXP USA Inc.)

This NXP Nexperia part provides 100A continuous drain current with on-resistance of 3.3mOhm, matching the original IRF1503STRRPBF specification. Gate charge of 64nC represents significant improvement over the original 200nC. Power dissipation is rated at 114W. This part offers direct electrical compatibility with lower switching losses. Available in bulk packaging with high inventory levels.

PSMN4R3-30BL,118 (Nexperia USA Inc.)

This part delivers 100A continuous drain current with the lowest gate charge of 41.5nC among all substitutes, providing optimal switching performance. On-resistance of 4.1mOhm is slightly higher than the original specification but remains within acceptable operating parameters. Power dissipation of 103W is adequate for most applications. This part is ROHS3 compliant and available in tape and reel packaging with the highest inventory level (10,750 pcs). Recommended for applications where switching speed and gate drive efficiency are critical.

Frequently Asked Questions (FAQ)

Q: Can the IRF1503STRRPBF be directly replaced with any of these substitute parts?

A: All four substitute parts are mechanically and electrically compatible for direct replacement in D2PAK surface mount applications. Each part maintains the 30V Vdss rating and -55°C to 175°C operating temperature range. Verify that your application can accommodate the higher continuous drain current ratings (80A to 100A) of the substitutes, as this represents an improvement over the original 75A specification.

Q: What is the primary difference between the Infineon IPB80N03S4L02ATMA1 and the NXP Nexperia alternatives?

A: The IPB80N03S4L02ATMA1 is manufactured by Infineon Technologies, the same company that produced the original IRF1503STRRPBF. The NXP Nexperia parts (PSMN series) are from a different manufacturer. All parts meet the same voltage and temperature specifications. The primary differences are in on-resistance values, gate charge characteristics, and power dissipation ratings. Selection should be based on your specific application requirements for switching speed and thermal performance.

Q: How do gate charge differences affect my circuit design?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. The original IRF1503STRRPBF requires 200nC at 10V. All substitute parts have lower gate charge values (41.5nC to 140nC), meaning they require less gate drive energy and switch faster. This reduces switching losses and heat generation. If your gate driver is current-limited, the lower gate charge of substitutes may improve overall circuit efficiency.

Q: Are there any compliance or certification differences between these parts?

A: The IPB80N03S4L02ATMA1 and PSMN4R3-30BL,118 are both ROHS3 compliant. All parts are REACH unaffected and carry EAR99 ECCN classification. All parts have MSL rating of 1 (unlimited moisture sensitivity level), indicating no special moisture handling requirements during storage or assembly.

Q: Which substitute part should I select for a new design?

A: For new designs, select from the active product status parts based on your specific performance requirements. If switching efficiency is critical, choose PSMN4R3-30BL,118 (lowest gate charge at 41.5nC). If thermal performance is the priority, choose PSMN2R7-30BL,118 (highest power dissipation at 170W). If you require continuity with the original manufacturer, choose IPB80N03S4L02ATMA1 from Infineon Technologies.

Q: Can I use these parts interchangeably in existing PCB layouts?

A: Yes. All substitute parts use the D2PAK (TO-263-3) package with identical pinout and mechanical dimensions. PCB layouts designed for the IRF1503STRRPBF require no modification for any of these substitute parts. Verify that your thermal management design (heatsinking, PCB copper area) is adequate for the power dissipation of your selected substitute part.

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