IRF1503STRLPBF Equivalent & Substitute Parts

Part Overview

The IRF1503STRLPBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 30V drain-to-source voltage and 75A continuous drain current in a D2PAK surface mount package. This device is part of the HEXFET® series and is classified as obsolete. Due to its obsolete status, equivalent and substitute parts from active product lines are necessary for new designs and ongoing production requirements. Substitute devices maintain compatibility with the D2PAK package footprint while offering comparable or enhanced electrical performance within the 30V rating class.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C	75	A (Tc)
On-State Resistance (Rds On) @ 10V	3.3	mOhm @ 140A, 10V
Gate Threshold Voltage (Vgs(th))	4	V @ 250µA
Gate Charge (Qg) @ 10V	200	nC
Maximum Gate Voltage (Vgs)	±20	V
Input Capacitance (Ciss) @ 25V	5730	pF
Power Dissipation (Max)	200	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	D2PAK (TO-263-3)	Surface Mount
FET Type	N-Channel	MOSFET

Substitute Part Grouping Explanation

Substitution of the IRF1503STRLPBF is determined by the following critical parameters:

Primary Compatibility Criteria:

Drain-to-Source Voltage (Vdss): Must be ≥30V to maintain voltage rating compatibility
Package Type: Must be D2PAK (TO-263-3) for mechanical and thermal compatibility
FET Type: Must be N-Channel MOSFET
Operating Temperature Range: Must support -55°C to 175°C
Mounting Type: Must be Surface Mount

Secondary Performance Criteria:

Continuous Drain Current (Id): Substitute devices rated ≥75A provide direct replacement capability
On-State Resistance (Rds On): Lower values indicate improved performance
Gate Charge (Qg): Lower values reduce switching losses
Power Dissipation: Higher ratings provide thermal margin

Substitute parts are grouped into two categories:

Category 1 - Direct Voltage Class Substitutes (30V Rating): IPB80N03S4L02ATMA1, PSMN2R7-30BL,118, PSMN3R4-30BL,118, PSMN4R3-30BL,118

These devices maintain the 30V Vdss rating and D2PAK package, with drain current ratings of 80A or 100A, providing enhanced performance within the same voltage class.

Category 2 - Higher Voltage Class Substitute (55V Rating): STB140NF55T4

This device operates at 55V Vdss, providing voltage derating margin while maintaining the D2PAK package and 80A drain current rating. This substitute is suitable for applications where voltage headroom is beneficial.

Parameter Comparison

Parameter	IRF1503STRLPBF	IPB80N03S4L02ATMA1	PSMN2R7-30BL,118	PSMN3R4-30BL,118	PSMN4R3-30BL,118	STB140NF55T4
Manufacturer	Infineon	Infineon	NXP USA Inc.	NXP USA Inc.	Nexperia USA Inc.	STMicroelectronics
Vdss (V)	30	30	30	30	30	55
Id @ 25°C (A)	75	80	100	100	100	80
Rds On @ 10V (mOhm)	3.3 @ 140A	2.4 @ 80A	3.0 @ 25A	3.3 @ 25A	4.1 @ 15A	8.0 @ 40A
Vgs(th) (V)	4 @ 250µA	2.2 @ 90µA	2.15 @ 1mA	2.15 @ 1mA	2.15 @ 1mA	4 @ 250µA
Qg @ 10V (nC)	200	140	66	64	41.5	142
Ciss @ 25V (pF)	5730	9750	3954	3907	2400	5300
Power Dissipation (W)	200	136	170	114	103	300
Operating Temp (°C)	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175
Package	D2PAK	PG-TO263-3-2	D2PAK	D2PAK	D2PAK	D2PAK
Product Status	Obsolete	Active	Active	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	Not specified	Not specified	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

For Direct Replacement in 30V Applications:

The IPB80N03S4L02ATMA1 (Infineon OptiMOS™ series) is the primary recommended substitute. This device maintains the 30V Vdss rating and D2PAK package while offering improved performance characteristics: 80A continuous drain current, reduced on-state resistance (2.4 mOhm), and lower gate charge (140 nC). The OptiMOS™ series is an active product line with full RoHS3 compliance and unlimited moisture sensitivity rating. This substitute provides direct functional replacement with enhanced efficiency.

For Enhanced Current Handling in 30V Applications:

The PSMN2R7-30BL,118, PSMN3R4-30BL,118, and PSMN4R3-30BL,118 (Nexperia/NXP) are active alternatives rated for 100A continuous drain current at 30V. These devices offer significantly reduced gate charge (41.5 to 66 nC) compared to the original part, resulting in lower switching losses. The PSMN4R3-30BL,118 provides the lowest gate charge and input capacitance, optimizing for high-frequency switching applications. All three maintain D2PAK package compatibility and -55°C to 175°C operating range. RoHS3 compliance is confirmed for the PSMN4R3-30BL,118.

For Voltage-Derating Applications:

The STB140NF55T4 (STMicroelectronics STripFET™ II series) operates at 55V Vdss with 80A continuous drain current in D2PAK package. This substitute is suitable for applications requiring voltage margin above the 30V nominal rating. The higher voltage rating provides derating capability for transient overvoltage conditions. Power dissipation rating of 300W exceeds the original part. This device is an active product with full RoHS3 compliance.

Compliance and Availability:

All substitute parts are active products with RoHS3 compliance and REACH unaffected status. Inventory availability is confirmed for all substitutes, with PSMN4R3-30BL,118 offering the highest stock level (10,750 pieces). The original IRF1503STRLPBF, while obsolete, maintains 2,410 pieces in current inventory.

Frequently Asked Questions (FAQ)

Q: Can the IPB80N03S4L02ATMA1 be used as a direct drop-in replacement for the IRF1503STRLPBF?

A: Yes. Both devices are rated for 30V Vdss, feature N-Channel MOSFET technology, operate across -55°C to 175°C, and use the D2PAK surface mount package. The IPB80N03S4L02ATMA1 provides improved performance with 80A continuous drain current versus 75A, lower on-state resistance (2.4 mOhm versus 3.3 mOhm), and reduced gate charge (140 nC versus 200 nC). Pin configuration and package footprint are compatible.

Q: What is the difference between the 30V and 55V substitute options?

A: The 30V substitutes (IPB80N03S4L02ATMA1, PSMN series) maintain the original voltage rating and are suitable for applications operating at or below 30V. The STB140NF55T4 operates at 55V Vdss, providing additional voltage headroom and derating margin. Selection depends on the application's maximum operating voltage and transient overvoltage requirements.

Q: Why do the Nexperia PSMN devices show lower gate charge than the original part?

A: Gate charge (Qg) is a function of device design and process technology. The PSMN series devices feature optimized gate structures that reduce switching losses. Lower gate charge results in faster switching transitions and reduced power dissipation during switching events. This is a performance enhancement, not a compatibility issue.

Q: Are all substitute parts RoHS3 compliant?

A: RoHS3 compliance is confirmed for IPB80N03S4L02ATMA1, PSMN4R3-30BL,118, and STB140NF55T4. Compliance status is not specified in the provided data for PSMN2R7-30BL,118 and PSMN3R4-30BL,118. Verification with the manufacturer is recommended if RoHS3 certification is a requirement.

Q: Can I use a substitute rated for higher drain current (100A) in place of the 75A original part?

A: Yes. Higher current ratings indicate the device can safely handle greater current levels. Using a 100A-rated device in a 75A application provides thermal margin and improved reliability. The device will not draw more current than the circuit requires; the higher rating simply provides additional capacity.

Q: What is the significance of the different Rds On measurement conditions across the substitute parts?

A: On-state resistance (Rds On) is measured at specific drain current and gate voltage conditions. Different manufacturers specify Rds On at different operating points (e.g., 140A versus 25A versus 15A). These measurements reflect the device's resistance characteristics at those specific conditions. For circuit design, use the Rds On value specified at the operating point closest to your application's drain current.

Q: Are the D2PAK and TO-263-3 packages identical?

A: Yes. D2PAK and TO-263-3 are equivalent designations for the same package type. Both refer to a three-lead surface mount package with two leads and a tab for thermal connection. All substitute parts use this package and are mechanically and thermally compatible with the original IRF1503STRLPBF.

Q: What is the moisture sensitivity level (MSL) and why does it matter?

A: Moisture Sensitivity Level (MSL) 1 indicates unlimited shelf life without moisture control requirements. All substitute parts with specified MSL ratings are rated MSL 1, meaning they can be stored and handled without special moisture-control packaging. This simplifies supply chain management and reduces handling costs.

Q: Should I select the substitute with the lowest gate charge for my application?

A: Lower gate charge reduces switching losses and improves efficiency in high-frequency switching applications. However, selection should be based on your specific circuit requirements, including operating frequency, thermal constraints, and cost considerations. The PSMN4R3-30BL,118 offers the lowest gate charge (41.5 nC) among 30V substitutes, while the IPB80N03S4L02ATMA1 provides a balanced performance profile.

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