IRF1503SPBF N-Channel 30V 75A MOSFET Equivalent & Substitute Parts

Part Overview

The IRF1503SPBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 30V drain-to-source voltage and 75A continuous drain current in a D2PAK surface mount package. This device is part of the HEXFET® series and is designed for high-current switching applications requiring efficient power dissipation up to 200W.

The IRF1503SPBF is currently discontinued at DiGi Electronics. Equivalent and substitute parts are available from Infineon Technologies and NXP/Nexperia, offering comparable or enhanced electrical performance within the same voltage class and package family.

Key Parameters

Parameter	IRF1503SPBF	Unit
Drain-to-Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C	75	A
Rds On (Max) @ Id, Vgs	3.3 mOhm @ 140A, 10V	mOhm
Gate Threshold Voltage (Vgs(th)) @ Id	4 @ 250µA	V @ µA
Gate Charge (Qg) @ Vgs	200 @ 10V	nC @ V
Power Dissipation (Max)	200	W
Operating Temperature Range	-55 to 175	°C
Package Type	D2PAK (TO-263-3)	-
Mounting Type	Surface Mount	-
RoHS Status	ROHS3 Compliant	-

Substitute Part Grouping Explanation

Substitution of the IRF1503SPBF is determined by the following critical parameters:

Voltage Class: All substitute parts maintain 30V Vdss rating, ensuring compatibility with the same circuit voltage specifications.

Package Compatibility: All substitutes use D2PAK (TO-263-3) surface mount packaging, maintaining identical PCB footprint and thermal interface characteristics.

Current Rating: Substitute parts are rated for 80A to 100A continuous drain current, exceeding the original 75A specification. This provides design margin and thermal headroom.

Gate Drive Voltage: Substitute parts operate at 4.5V to 10V drive voltage range, compatible with standard gate driver circuits.

Operating Temperature: All parts maintain -55°C to 175°C junction temperature range, ensuring thermal compatibility across applications.

Compliance: All substitute parts are ROHS3 compliant with MSL 1 (Unlimited) moisture sensitivity rating.

Parameter Comparison

Parameter	IRF1503SPBF	IPB80N03S4L02ATMA1	PSMN2R7-30BL,118	PSMN3R4-30BL,118	PSMN4R3-30BL,118	Unit
Manufacturer	Infineon	Infineon	NXP USA Inc.	NXP USA Inc.	Nexperia USA Inc.	-
Vdss	30	30	30	30	30	V
Id @ 25°C	75	80	100	100	100	A
Rds On (Max) @ 10V	3.3 @ 140A	2.4 @ 80A	3.0 @ 25A	3.3 @ 25A	4.1 @ 15A	mOhm
Gate Charge (Qg) @ 10V	200	140	66	64	41.5	nC
Power Dissipation (Max)	200	136	170	114	103	W
Vgs(th) @ Id	4 @ 250µA	2.2 @ 90µA	2.15 @ 1mA	2.15 @ 1mA	2.15 @ 1mA	V @ µA
Operating Temp Range	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	°C
Package	D2PAK	PG-TO263-3-2	D2PAK	D2PAK	D2PAK	-
Product Status	Discontinued	Active	Active	Active	Active	-
RoHS Status	ROHS3	ROHS3	-	-	ROHS3	-

Engineering Selection Recommendations

IPB80N03S4L02ATMA1 (Infineon OptiMOS™ Series)

This part is the manufacturer-recommended equivalent from Infineon Technologies. It provides 80A continuous drain current with improved on-resistance (2.4 mOhm) and reduced gate charge (140 nC), resulting in lower switching losses and improved thermal performance. The IPB80N03S4L02ATMA1 is actively produced and ROHS3 compliant. It is suitable for direct replacement in applications where the enhanced performance characteristics are beneficial.

PSMN2R7-30BL,118 (NXP/Nexperia)

This part offers 100A continuous drain current with 3.0 mOhm on-resistance and significantly reduced gate charge (66 nC). It is actively produced and available in bulk packaging. The PSMN2R7-30BL,118 is appropriate for applications requiring higher current capacity and lower gate drive requirements.

PSMN3R4-30BL,118 (NXP/Nexperia)

This part provides 100A continuous drain current with 3.3 mOhm on-resistance and 64 nC gate charge. It is actively produced and available in bulk packaging. The PSMN3R4-30BL,118 offers performance characteristics closely aligned with the original IRF1503SPBF on-resistance specification.

PSMN4R3-30BL,118 (Nexperia)

This part delivers 100A continuous drain current with the lowest gate charge (41.5 nC) among all substitutes, enabling fastest switching transitions. It is actively produced, ROHS3 compliant, and available in tape and reel packaging. The PSMN4R3-30BL,118 is optimal for applications prioritizing switching speed and gate driver efficiency.

All substitute parts maintain identical voltage rating, package footprint, and operating temperature range. Selection should be based on specific application requirements for current capacity, on-resistance, gate charge, and power dissipation characteristics.

Frequently Asked Questions (FAQ)

Q: Can the IRF1503SPBF be directly replaced with any of these substitute parts?

A: Yes. All substitute parts share the same 30V voltage rating, D2PAK surface mount package, and -55°C to 175°C operating temperature range. PCB layout and thermal management remain unchanged. Gate drive circuits compatible with 10V operation will function with all substitutes.

Q: What is the primary difference between the Infineon IPB80N03S4L02ATMA1 and the NXP/Nexperia alternatives?

A: The IPB80N03S4L02ATMA1 is rated for 80A continuous current, while the NXP/Nexperia parts are rated for 100A. The Infineon part features lower gate charge (140 nC) compared to the NXP parts (41.5 to 66 nC), resulting in different switching speed characteristics. The choice depends on whether the application requires the manufacturer's original design lineage or benefits from higher current capacity.

Q: Are there packaging differences between these parts?

A: The IPB80N03S4L02ATMA1 uses PG-TO263-3-2 supplier package designation but maintains D2PAK physical compatibility. The NXP/Nexperia parts use standard D2PAK designation. All parts are surface mount with identical lead spacing and thermal tab interface. Packaging format (tape and reel versus bulk) differs but does not affect electrical or mechanical compatibility.

Q: Which substitute part has the lowest on-resistance?

A: The IPB80N03S4L02ATMA1 has the lowest on-resistance at 2.4 mOhm (measured at 80A, 10V). The PSMN2R7-30BL,118 follows at 3.0 mOhm (measured at 25A, 10V). Lower on-resistance reduces conduction losses and heat generation in high-current applications.

Q: Which substitute part has the lowest gate charge?

A: The PSMN4R3-30BL,118 has the lowest gate charge at 41.5 nC (at 10V). This enables faster switching transitions and reduces gate driver power consumption. The PSMN3R4-30BL,118 and PSMN2R7-30BL,118 follow with 64 nC and 66 nC respectively.

Q: Are all substitute parts RoHS3 compliant?

A: The IPB80N03S4L02ATMA1 and PSMN4R3-30BL,118 are explicitly ROHS3 compliant. RoHS compliance status is not specified in the provided data for PSMN2R7-30BL,118 and PSMN3R4-30BL,118, though these are current production parts from NXP/Nexperia.

Q: What is the moisture sensitivity level (MSL) for these parts?

A: The IRF1503SPBF, IPB80N03S4L02ATMA1, and PSMN4R3-30BL,118 are rated MSL 1 (Unlimited). MSL rating is not specified in the provided data for the PSMN2R7-30BL,118 and PSMN3R4-30BL,118.

Q: Can I use a substitute part with higher current rating in a circuit designed for 75A?

A: Yes. The 80A and 100A rated substitutes provide design margin and thermal headroom. Higher current ratings do not create compatibility issues in circuits designed for lower current operation. The parts will operate within their safe operating area with reduced thermal stress.

Q: Which substitute part should I select for a new design?

A: For new designs, select from the actively produced parts: IPB80N03S4L02ATMA1 (Infineon), PSMN2R7-30BL,118, PSMN3R4-30BL,118, or PSMN4R3-30BL,118 (NXP/Nexperia). All are in active production with established supply chains. Selection depends on whether your gate driver circuit is optimized for lower gate charge (Nexperia parts) or whether you prefer the original manufacturer's technology (Infineon OptiMOS™).

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