IRF1503PBF N-Channel 30V 75A MOSFET Equivalent & Substitute Parts

Part Overview

The IRF1503PBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 30V drain-to-source voltage and 75A continuous drain current in a TO-220AB through-hole package. This device is part of the HEXFET® series and is classified as obsolete. Due to its obsolete status, equivalent and substitute parts from active product lines are necessary to maintain design continuity and ensure long-term component availability for new production and field replacements.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C	75	A
On-State Resistance (Rds On) @ 10V	3.3	mOhm
Gate Threshold Voltage (Vgs(th))	4	V @ 250µA
Gate Charge (Qg) @ 10V	200	nC
Power Dissipation (Max)	330	W
Operating Temperature Range	-55 to 175	°C
Package Type	TO-220AB	Through Hole
RoHS Status	ROHS3 Compliant

Substitute Part Grouping Explanation

Substitution of the IRF1503PBF is determined by strict alignment of the following electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 30V
Continuous Drain Current (Id): Must equal or exceed 75A at 25°C
Package Type: TO-220 or TO-220AB through-hole configuration
Gate Drive Voltage: Compatible with 10V drive capability
Operating Temperature Range: Must support -55°C to 175°C
RoHS3 Compliance: Required for regulatory alignment

Substitution Logic: Parts are grouped into two categories based on electrical performance:

Direct Equivalents (30V Rating): Parts maintaining the 30V Vdss rating with equal or superior drain current and on-state resistance characteristics. These provide pin-compatible replacement with minimal circuit redesign.
Higher Voltage Alternatives (100V Rating): Parts with elevated Vdss ratings that maintain compatibility with 30V circuit operation while offering enhanced voltage margin. These are suitable for applications where increased voltage headroom is beneficial.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On @ 10V (mOhm)	Qg @ 10V (nC)	Power Diss. (W)	Package	Status
IRF1503PBF	Infineon	30	75	3.3	200	330	TO-220AB	Obsolete
IPP80N03S4L03AKSA1	Infineon	30	80	2.7	140	136	TO-220-3	Active
IRLB8743PBF	Infineon	30	78	3.2	54	140	TO-220AB	Active
PSMN3R4-30PL,127	Nexperia	30	100	3.4	64	114	TO-220AB	Obsolete
PSMN4R3-30PL,127	Nexperia	30	100	4.3	41.5	103	TO-220AB	Obsolete
STP105N3LL	STMicroelectronics	30	80	3.5	42	140	TO-220	Active
STP160N3LL	STMicroelectronics	30	120	3.2	42	136	TO-220	Active
IRF100B201	Infineon	100	192	4.2	255	441	TO-220AB	Active

Engineering Selection Recommendations

For Direct Replacement (30V Vdss Category):

The IPP80N03S4L03AKSA1 from Infineon is the manufacturer-recommended primary substitute. This part is in active production status, ensuring long-term availability. It meets or exceeds all electrical parameters of the IRF1503PBF with improved on-state resistance (2.7 mOhm vs. 3.3 mOhm) and reduced gate charge (140 nC vs. 200 nC), resulting in lower power dissipation and improved switching efficiency. The OptiMOS™ series technology provides enhanced performance characteristics. RoHS3 compliance and unlimited moisture sensitivity level (MSL 1) align with the original part specifications.

The IRLB8743PBF from Infineon provides an alternative direct replacement with TO-220AB package compatibility. This HEXFET® series device maintains the same voltage rating and package footprint as the IRF1503PBF while delivering comparable drain current (78A vs. 75A) and on-state resistance (3.2 mOhm vs. 3.3 mOhm). Active product status ensures availability.

The STP160N3LL from STMicroelectronics offers superior current handling (120A vs. 75A) within the 30V rating class. This STripFET™ H6 series device is in active production and provides design margin for applications requiring higher current capacity. The TO-220 package is mechanically compatible with TO-220AB footprints.

For Higher Voltage Applications (100V Vdss Category):

The IRF100B201 from Infineon is suitable for applications where elevated voltage headroom is required. This part operates at 100V Vdss while maintaining TO-220AB package compatibility. The significantly higher current rating (192A) and power dissipation capability (441W) provide substantial design margin. Active production status and HEXFET®/StrongIRFET™ series designation ensure long-term component availability. This selection is appropriate only when circuit topology permits operation at 100V.

Compliance and Certification:

All recommended substitute parts maintain RoHS3 compliance and REACH unaffected status, consistent with the original IRF1503PBF. All parts carry EAR99 export classification and identical HTSUS commodity codes, ensuring regulatory continuity.

Frequently Asked Questions (FAQ)

Q: Can the IPP80N03S4L03AKSA1 directly replace the IRF1503PBF without circuit modification?

A: The IPP80N03S4L03AKSA1 is electrically compatible as a direct substitute. Both devices operate at 30V Vdss with comparable drain current ratings (80A vs. 75A). The TO-220-3 package is mechanically compatible with TO-220AB footprints. However, the reduced gate charge (140 nC vs. 200 nC) may require gate drive circuit evaluation to confirm switching performance alignment with the original design.

Q: What is the difference between TO-220AB and TO-220-3 packages?

A: Both packages are through-hole TO-220 variants with three leads (Gate, Drain, Source). TO-220AB and TO-220-3 designations refer to the same physical form factor and pin configuration. They are mechanically and electrically interchangeable for PCB mounting purposes.

Q: Why is the IRF100B201 listed as a substitute if it has a 100V rating instead of 30V?

A: The IRF100B201 is included as a higher-voltage alternative for applications where circuit topology permits operation at elevated voltage levels. A 100V-rated device operates safely in 30V circuits and provides additional voltage margin. This substitution is appropriate only when the application design allows for higher voltage operation without circuit modification.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed in this reference maintain RoHS3 compliance status, consistent with the original IRF1503PBF. This ensures regulatory alignment for new production and field replacement applications.

Q: What is the significance of gate charge (Qg) differences between substitute parts?

A: Gate charge affects switching speed and gate drive circuit requirements. Lower gate charge (such as the 54 nC of IRLB8743PBF vs. 200 nC of IRF1503PBF) enables faster switching transitions and reduces gate drive power consumption. Gate drive circuits must be evaluated to confirm compatibility with the selected substitute part's gate charge specification.

Q: Can obsolete-status parts (PSMN3R4-30PL,127 and PSMN4R3-30PL,127) be used as substitutes?

A: These parts meet the electrical substitution criteria but carry obsolete product status. Selection of obsolete parts introduces long-term supply risk. Active-status alternatives (IPP80N03S4L03AKSA1, IRLB8743PBF, STP105N3LL, STP160N3LL) are preferred for new designs and production applications requiring sustained component availability.

Q: What is the operating temperature range compatibility?

A: The IRF1503PBF operates from -55°C to 175°C. All recommended substitute parts maintain this temperature range or equivalent specifications, ensuring thermal compatibility across the full operating envelope.

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