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IRF1407STRRPBF N-Channel 75V 100A MOSFET Equivalent & Substitute Parts
Part Overview
The IRF1407STRRPBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 75V drain-to-source voltage and 100A continuous drain current in a D2PAK surface mount package. This device is part of the HEXFET® series and is currently discontinued at DiGi Electronics, with 908 pieces available in new original stock. The part operates across a temperature range of -55°C to 175°C and is RoHS3 compliant. Due to its discontinued status, equivalent and substitute parts are necessary for ongoing design support and procurement continuity.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Drain-to-Source Voltage (Vdss) | 75 | V |
| Continuous Drain Current (Id) @ 25°C | 100 | A (Tc) |
| On-State Resistance (Rds On) @ 78A, 10V | 7.8 | mOhm |
| Gate Threshold Voltage (Vgs(th)) @ 250µA | 4 | V |
| Gate Charge (Qg) @ 10V | 250 | nC |
| Input Capacitance (Ciss) @ 25V | 5600 | pF |
| Power Dissipation (Max) | 3.8 (Ta), 200 (Tc) | W |
| Operating Temperature Range | -55 to 175 | °C (TJ) |
| Package Type | D2PAK (TO-263-3) | Surface Mount |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | — |
Substitute Part Grouping Explanation
Substitution eligibility for the IRF1407STRRPBF is determined by the following critical parameters:
Primary Matching Criteria:
- Drain-to-Source Voltage (Vdss): 75V or higher
- Continuous Drain Current (Id): 100A or higher at Tc
- Package Type: D2PAK (TO-263-3) surface mount
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Operating Temperature Range: -55°C to 175°C minimum
Secondary Compatibility Parameters:
- On-State Resistance (Rds On): Lower or equivalent values preferred
- Gate Charge (Qg): Lower values indicate faster switching
- Input Capacitance (Ciss): Lower values reduce drive requirements
- Power Dissipation: Higher ratings provide thermal margin
Substitute parts are grouped into two categories:
Category 1: Manufacturer Recommended Equivalents (MFR Recommended) Parts that meet or exceed all primary matching criteria with improved or equivalent secondary parameters. These parts are actively supported by manufacturers and represent direct functional replacements.
Category 2: Parametric Equivalents Parts that match primary criteria but may have variations in secondary parameters. These parts function as electrical equivalents within the specified application constraints.
Parameter Comparison
| Part Number | Manufacturer | Vdss (V) | Id @ Tc (A) | Rds On (mOhm) | Qg (nC) | Ciss (pF) | Power Diss. (W) | Package | Status |
|---|---|---|---|---|---|---|---|---|---|
| IRF1407STRRPBF | Infineon | 75 | 100 | 7.8 | 250 | 5600 | 200 (Tc) | D2PAK | Discontinued |
| IPB100N08S207ATMA1 | Infineon | 75 | 100 | 6.8 | 200 | 4700 | 300 (Tc) | D2PAK | Last Time Buy |
| IPB100N08S2L07ATMA1 | Infineon | 75 | 100 | 6.5 | 246 | 5400 | 300 (Tc) | D2PAK | Obsolete |
| IPB80N08S207ATMA1 | Infineon | 75 | 80 | 7.1 | 180 | 4700 | 300 (Tc) | D2PAK | Active |
| IRF1407STRLPBF | Infineon | 75 | 100 | 7.8 | 250 | 5600 | 200 (Tc) | D2PAK | Active |
| BUK9609-75A,118 | NXP USA Inc. | 75 | 75 | 8.5 | — | 8840 | 230 (Tc) | D2PAK | Active |
| FDB060AN08A0 | onsemi | 75 | 80 | 6 | 95 | 5150 | 255 (Tc) | D2PAK | Active |
| IXTA110N055T2 | IXYS | 55 | 110 | 6.6 | 57 | 3060 | 180 (Tc) | D2PAK | Active |
| PSMN008-75B,118 | Nexperia USA Inc. | 75 | 75 | 8.5 | 122.8 | 5260 | 230 (Tc) | D2PAK | Active |
| PSMN6R5-80BS,118 | Nexperia USA Inc. | 80 | 100 | 6.9 | 71 | 4461 | 210 (Tc) | D2PAK | Active |
| STB140NF55T4 | STMicroelectronics | 55 | 80 | 8 | 142 | 5300 | 300 (Tc) | D2PAK | Active |
Engineering Selection Recommendations
Tier 1: Direct Replacement (Highest Compatibility)
IRF1407STRLPBF (Infineon Technologies) is the parametric equivalent with identical electrical specifications to the IRF1407STRRPBF. The only difference is packaging format (Cut Tape & Digi-Reel® versus Tape & Reel). This part is currently Active with 21,400 pieces in stock and is RoHS3 compliant. Selection of this part eliminates all compatibility concerns for existing designs.
Tier 2: Manufacturer Recommended Equivalents (Enhanced Performance)
IPB100N08S207ATMA1 (Infineon Technologies, OptiMOS™ series) meets all primary criteria with improved secondary parameters: lower Rds On (6.8 mOhm versus 7.8 mOhm), reduced gate charge (200 nC versus 250 nC), and higher power dissipation rating (300W Tc versus 200W Tc). Product status is Last Time Buy with 918 pieces in stock. RoHS3 compliant.
PSMN6R5-80BS,118 (Nexperia USA Inc., TrenchMOS™ series) provides 75V/100A capability with Vdss of 80V, offering voltage margin. Rds On is 6.9 mOhm with significantly reduced gate charge (71 nC). Power dissipation is 210W Tc. Product status is Active with 5,081 pieces in stock. RoHS3 compliant.
Tier 3: Functional Alternatives (Application-Dependent)
IPB80N08S207ATMA1 (Infineon Technologies, OptiMOS™ series) is suitable for applications where 80A continuous drain current is sufficient. Vdss remains 75V. Rds On is 7.1 mOhm with reduced gate charge (180 nC). Power dissipation is 300W Tc. Product status is Active with 1,094 pieces in stock. RoHS3 compliant.
FDB060AN08A0 (onsemi, PowerTrench® series) provides 75V/80A capability with superior Rds On (6 mOhm) and minimal gate charge (95 nC). Power dissipation is 255W Tc. Product status is Active with 19,777 pieces in stock. RoHS3 compliant.
Tier 4: Voltage-Reduced Alternatives (Limited Scope)
IXTA110N055T2 (IXYS, TrenchT2™ series) operates at 55V Vdss with 110A continuous drain current. This part is suitable only for applications where 55V voltage rating is acceptable. Rds On is 6.6 mOhm with minimal gate charge (57 nC). Product status is Active with 1,650 pieces in stock. RoHS3 compliant.
STB140NF55T4 (STMicroelectronics, STripFET™ II series) operates at 55V Vdss with 80A continuous drain current. Suitable only for applications where 55V voltage rating is acceptable. Rds On is 8 mOhm. Power dissipation is 300W Tc. Product status is Active with 15,365 pieces in stock. RoHS3 compliant.
Tier 5: Current-Reduced Alternatives (Limited Scope)
BUK9609-75A,118 (NXP USA Inc., TrenchMOS™ series) provides 75V/75A capability. Rds On is 8.5 mOhm. Includes AEC-Q101 automotive qualification. Product status is Active with 1,665 pieces in stock. Suitable only for applications where 75A continuous drain current is sufficient.
PSMN008-75B,118 (Nexperia USA Inc., TrenchMOS™ series) provides 75V/75A capability. Rds On is 8.5 mOhm with gate charge of 122.8 nC. Power dissipation is 230W Tc. Product status is Active with 6,490 pieces in stock. RoHS3 compliant. Suitable only for applications where 75A continuous drain current is sufficient.
Frequently Asked Questions (FAQ)
Q: Can IRF1407STRLPBF directly replace IRF1407STRRPBF?
A: Yes. IRF1407STRLPBF is a parametric equivalent with identical electrical specifications. The difference is packaging format: IRF1407STRLPBF is supplied in Cut Tape & Digi-Reel® format, while IRF1407STRRPBF is supplied in Tape & Reel format. Both are D2PAK surface mount packages. IRF1407STRLPBF is currently Active with higher inventory availability.
Q: What is the primary reason to select IPB100N08S207ATMA1 over IRF1407STRLPBF?
A: IPB100N08S207ATMA1 offers improved performance characteristics: lower on-state resistance (6.8 mOhm versus 7.8 mOhm reduces conduction losses), reduced gate charge (200 nC versus 250 nC enables faster switching), and higher power dissipation rating (300W Tc versus 200W Tc provides thermal margin). These improvements result in lower heat generation and improved efficiency in switching applications.
Q: Can PSMN6R5-80BS,118 be used in place of IRF1407STRRPBF?
A: Yes, with consideration of voltage rating. PSMN6R5-80BS,118 has a higher Vdss rating (80V versus 75V), which provides voltage margin and is compatible with 75V applications. Current rating is identical (100A). Rds On is lower (6.9 mOhm), and gate charge is significantly reduced (71 nC). This part is suitable for direct substitution in applications where the higher voltage rating does not create design conflicts.
Q: What are the limitations of IXTA110N055T2 as a substitute?
A: IXTA110N055T2 has a reduced Vdss rating of 55V compared to the original 75V specification. This part is suitable only for applications where the maximum operating voltage does not exceed 55V. The higher current rating (110A) and lower gate charge (57 nC) do not compensate for the voltage limitation in designs requiring 75V capability.
Q: Are all substitute parts RoHS3 compliant?
A: All substitute parts listed are RoHS3 compliant except where noted. Compliance status is provided in the parameter comparison table. All parts are REACH Unaffected and classified as EAR99 for export control purposes.
Q: What is the difference between "Last Time Buy" and "Obsolete" product status?
A: "Last Time Buy" indicates the manufacturer will accept final orders before discontinuation but will not produce additional stock. "Obsolete" indicates the part is no longer manufactured or supported. IPB100N08S207ATMA1 is Last Time Buy, while IPB100N08S2L07ATMA1 is Obsolete. For new designs, select parts with Active status.
Q: Can FDB060AN08A0 be used if the application requires 100A continuous drain current?
A: No. FDB060AN08A0 is rated for 80A continuous drain current at Tc, which is below the 100A requirement of the original IRF1407STRRPBF. Using this part in a 100A application would exceed its rated current capacity and result in thermal stress and potential failure.
Q: What is the significance of lower gate charge in substitute parts?
A: Lower gate charge (Qg) reduces the energy required to switch the MOSFET on and off, resulting in lower gate drive power consumption and faster switching transitions. Parts with reduced gate charge (such as PSMN6R5-80BS,118 at 71 nC versus the original 250 nC) are advantageous in high-frequency switching applications and reduce heat generation in the gate drive circuit.
Q: Are there package compatibility concerns when selecting substitute parts?
A: All substitute parts listed use D2PAK (TO-263-3) surface mount packaging, which is mechanically and electrically compatible with the original IRF1407STRRPBF. Pin configuration and thermal tab placement are standardized across all listed parts. No PCB layout modifications are required for package substitution.
Q: Which substitute part offers the best overall performance improvement?
A: IPB100N08S207ATMA1 provides the most comprehensive performance improvement: it maintains 75V/100A ratings, reduces Rds On by 13% (6.8 mOhm versus 7.8 mOhm), reduces gate charge by 20% (200 nC versus 250 nC), increases power dissipation rating by 50% (300W Tc versus 200W Tc), and reduces input capacitance by 16% (4700 pF versus 5600 pF). However, its Last Time Buy status requires consideration for long-term supply planning.
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