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IRF1407S N-Channel MOSFET 75V 100A Equivalent & Substitute Parts
Part Overview
The IRF1407S is an N-Channel MOSFET manufactured by Infineon Technologies, designed for high-current switching applications in the 75V class. This device features a continuous drain current rating of 100A at case temperature (Tc) with a maximum on-resistance of 7.8mOhm at 78A and 10V gate-source voltage. The part is packaged in D2PAK (TO-263-3) surface mount configuration with a power dissipation capability of 200W at case temperature.
The IRF1407S is classified as Obsolete, which necessitates identification of functionally equivalent alternatives. Substitute parts must maintain compatibility across critical electrical parameters including drain-source voltage rating, continuous drain current, on-resistance characteristics, and physical package format to ensure direct replacement capability in existing circuit designs.
Substiute Parts
Key Parameters
| Parameter | IRF1407S Value | Unit |
|---|---|---|
| FET Type | N-Channel | — |
| Drain to Source Voltage (Vdss) | 75 | V |
| Continuous Drain Current (Id) @ 25°C | 100 | A (Tc) |
| On-Resistance (Rds On Max) @ Id, Vgs | 7.8 | mOhm @ 78A, 10V |
| Gate Threshold Voltage (Vgs(th) Max) @ Id | 4 | V @ 250µA |
| Gate Charge (Qg Max) @ Vgs | 250 | nC @ 10V |
| Input Capacitance (Ciss Max) @ Vds | 5600 | pF @ 25V |
| Power Dissipation (Max) | 200 | W (Tc) |
| Operating Temperature Range | -55 to 175 | °C (TJ) |
| Package Type | D2PAK (TO-263-3) | — |
| Mounting Type | Surface Mount | — |
Substitute Part Grouping Explanation
Substitution of the IRF1407S is determined by strict adherence to the following electrical and mechanical criteria:
Primary Substitution Criteria:
- Drain-Source Voltage (Vdss): Must be ≥75V to maintain voltage margin in 75V applications
- Continuous Drain Current (Id): Must be ≥100A to support the original current rating
- On-Resistance (Rds On): Must be ≤7.8mOhm at rated conditions to ensure thermal and efficiency compatibility
- Gate Threshold Voltage (Vgs(th)): Must be within ±20V gate voltage specification
- Package Format: Must be D2PAK (TO-263-3) surface mount for mechanical compatibility
- Operating Temperature: Must support -55°C to 175°C range
Secondary Compatibility Parameters:
- Gate Charge (Qg): Lower values reduce switching losses; higher values acceptable if within thermal budget
- Input Capacitance (Ciss): Affects gate drive requirements; variations acceptable within circuit design margins
- Power Dissipation Rating: Higher ratings provide thermal margin; lower ratings require thermal management verification
Substitute parts are grouped into two categories: Direct Manufacturer Recommended Substitutes (Infineon OptiMOS™ series with Active or Last Time Buy status) and Cross-Manufacturer Alternatives (STMicroelectronics, NXP, onsemi, Nexperia) that meet all primary criteria.
Parameter Comparison
| Part Number | Manufacturer | Vdss (V) | Id (A) | Rds On Max (mOhm) | Vgs(th) Max (V) | Qg Max (nC) | Ciss Max (pF) | Pd Max (W) | Status |
|---|---|---|---|---|---|---|---|---|---|
| IRF1407S | Infineon | 75 | 100 | 7.8 | 4 | 250 | 5600 | 200 | Obsolete |
| IPB100N08S207ATMA1 | Infineon | 75 | 100 | 6.8 | 4 | 200 | 4700 | 300 | Last Time Buy |
| IPB100N08S2L07ATMA1 | Infineon | 75 | 100 | 6.5 | 2 | 246 | 5400 | 300 | Obsolete |
| IPB80N08S207ATMA1 | Infineon | 75 | 80 | 7.1 | 4 | 180 | 4700 | 300 | Active |
| IPB067N08N3GATMA1 | Infineon | 80 | 80 | 6.7 | 3.5 | 56 | 3840 | 136 | Active |
| STB140NF75T4 | STMicroelectronics | 75 | 120 | 7.5 | 4 | 218 | 5000 | 310 | Active |
| STB140NF55T4 | STMicroelectronics | 55 | 80 | 8 | 4 | 142 | 5300 | 300 | Active |
| PSMN6R5-80BS,118 | Nexperia | 80 | 100 | 6.9 | 4 | 71 | 4461 | 210 | Active |
| PSMN008-75B,118 | Nexperia | 75 | 75 | 8.5 | 4 | 122.8 | 5260 | 230 | Active |
| BUK9609-75A,118 | NXP USA Inc. | 75 | 75 | 8.5 | 2 | — | 8840 | 230 | Active |
| FDB060AN08A0 | onsemi | 75 | 80 | 6 | 4 | 95 | 5150 | 255 | Active |
Engineering Selection Recommendations
Tier 1: Recommended Direct Substitutes (Infineon Manufacturer)
IPB100N08S207ATMA1 is the primary recommended substitute. This part maintains identical voltage (75V) and current (100A) ratings as the IRF1407S while providing superior on-resistance (6.8mOhm vs. 7.8mOhm), lower gate charge (200nC vs. 250nC), and significantly higher power dissipation capability (300W vs. 200W). The part is classified as Last Time Buy, indicating continued availability with defined end-of-life support. RoHS3 compliance and REACH Unaffected status meet modern regulatory requirements.
IPB100N08S2L07ATMA1 provides equivalent electrical performance with the lowest on-resistance (6.5mOhm) and identical voltage/current ratings. However, this part is classified as Obsolete, limiting its long-term procurement viability despite current inventory availability (887 pcs).
IPB80N08S207ATMA1 is suitable for applications where 80A continuous current is acceptable. This Active status part offers improved on-resistance (7.1mOhm), lower gate charge (180nC), and higher power dissipation (300W). Selection requires verification that circuit design does not require the full 100A rating.
Tier 2: Cross-Manufacturer Alternatives (Active Status)
STB140NF75T4 (STMicroelectronics) matches the 75V voltage rating and exceeds current capability (120A vs. 100A). On-resistance of 7.5mOhm is comparable to the original part. Active product status and RoHS3 compliance support long-term availability. Higher power dissipation (310W) provides thermal margin.
PSMN6R5-80BS,118 (Nexperia) provides 80V voltage rating with 100A current capability and superior on-resistance (6.9mOhm). Active status and RoHS3 compliance ensure supply continuity. The 1V higher voltage rating (80V vs. 75V) is acceptable for 75V circuit applications.
FDB060AN08A0 (onsemi) offers the lowest on-resistance (6mOhm) among all alternatives with 75V/80A ratings. Active status and RoHS3 compliance are confirmed. Current rating of 80A requires application verification.
Tier 3: Conditional Alternatives
PSMN008-75B,118 (Nexperia) matches 75V rating but provides only 75A continuous current, representing a 25% reduction from the original 100A specification. Selection requires confirmation that circuit design accommodates reduced current capacity.
BUK9609-75A,118 (NXP) is qualified to AEC-Q101 automotive standard and suitable for automotive applications. The 75A current rating and 8.5mOhm on-resistance require application-specific verification. Higher input capacitance (8840pF) may affect gate drive circuit design.
IPB067N08N3GATMA1 (Infineon) provides 80V rating with reduced current (80A) and power dissipation (136W). This part is suitable only for lower-current applications and does not meet the 100A requirement of the original design.
Not Recommended: STB140NF55T4
The STB140NF55T4 operates at 55V maximum drain-source voltage, which is 20V below the IRF1407S specification. This part is unsuitable for 75V circuit applications and creates voltage margin violations.
Frequently Asked Questions (FAQ)
Q1: Can IPB100N08S207ATMA1 directly replace IRF1407S without circuit modifications?
A: Yes. The IPB100N08S207ATMA1 maintains identical voltage (75V) and current (100A) ratings, operates within the same temperature range (-55°C to 175°C), and uses the same D2PAK package. The improved on-resistance (6.8mOhm vs. 7.8mOhm) and lower gate charge (200nC vs. 250nC) provide performance benefits without requiring design changes. Verify gate drive voltage compatibility at ±20V maximum specification.
Q2: What is the significance of the voltage rating difference between 75V and 80V parts?
A: The 75V rating of the IRF1407S represents the maximum drain-source voltage the device can withstand. Substitute parts rated at 80V (such as IPB067N08N3GATMA1 and PSMN6R5-80BS,118) provide 5V additional voltage margin and are acceptable for 75V circuit applications. Parts rated below 75V (such as STB140NF55T4 at 55V) are unsuitable and create voltage margin violations.
Q3: How does on-resistance affect circuit performance?
A: On-resistance (Rds On) directly determines conduction losses and heat generation. Lower on-resistance reduces power dissipation and improves efficiency. The IRF1407S specifies 7.8mOhm maximum. Substitute parts with lower on-resistance (such as FDB060AN08A0 at 6mOhm or IPB100N08S2L07ATMA1 at 6.5mOhm) reduce thermal load. Parts with higher on-resistance require verification that thermal management remains adequate.
Q4: Why is product status (Active, Last Time Buy, Obsolete) important for substitution?
A: Product status indicates supply availability and manufacturer support. Active status parts ensure long-term procurement without end-of-life constraints. Last Time Buy parts have defined availability windows before discontinuation. Obsolete parts may have limited inventory and no manufacturer support. For new designs or long-term production, Active status parts (IPB80N08S207ATMA1, STB140NF75T4, PSMN6R5-80BS,118, FDB060AN08A0) are preferred.
Q5: Can parts with lower current ratings (80A) substitute for the 100A IRF1407S?
A: Substitution requires application verification. If the circuit design operates at or below 80A continuous current, parts such as IPB80N08S207ATMA1 or FDB060AN08A0 are acceptable. If the circuit requires the full 100A capability, only parts rated ≥100A (IPB100N08S207ATMA1, STB140NF75T4, PSMN6R5-80BS,118) are suitable. Review circuit current requirements before selection.
Q6: What is the impact of gate charge (Qg) differences on circuit design?
A: Gate charge affects switching speed and gate drive power requirements. Lower gate charge (such as IPB067N08N3GATMA1 at 56nC) reduces switching losses and simplifies gate drive design. Higher gate charge (such as BUK9609-75A,118 with unspecified Qg) may require higher gate drive current. The IRF1407S specifies 250nC. Substitutes with significantly different gate charge values require gate drive circuit verification.
Q7: Are all substitute parts RoHS3 compliant?
A: All recommended substitute parts in Tier 1 and Tier 2 are confirmed RoHS3 compliant. The original IRF1407S is RoHS non-compliant. For applications requiring RoHS3 compliance, select from: IPB100N08S207ATMA1, IPB100N08S2L07ATMA1, IPB80N08S207ATMA1, STB140NF75T4, PSMN6R5-80BS,118, PSMN008-75B,118, and FDB060AN08A0.
Q8: What package considerations apply to D2PAK substitutes?
A: All substitute parts listed use D2PAK (TO-263-3) surface mount packaging, which is mechanically and electrically compatible with the IRF1407S. Verify PCB footprint dimensions match TO-263-3 standard. Thermal pad connection to ground plane is critical for power dissipation management. No package conversion is required for any recommended substitute.
Q9: Which substitute provides the best thermal performance?
A: IPB100N08S207ATMA1 provides the highest power dissipation rating (300W at case temperature) combined with the lowest on-resistance among 100A-rated parts (6.8mOhm). This combination minimizes heat generation and provides maximum thermal margin. STB140NF75T4 also offers 310W dissipation capability with 7.5mOhm on-resistance.
Q10: Can automotive-qualified parts (BUK9609-75A,118) be used in non-automotive applications?
A: Yes. AEC-Q101 automotive qualification indicates enhanced reliability testing and quality assurance. These parts are suitable for any application requiring equivalent electrical specifications. The BUK9609-75A,118 meets 75V/75A requirements but does not provide the full 100A rating of the original part.
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