IRF1405ZSTRLPBF N-Channel 55V 75A MOSFET Equivalent & Substitute Parts

Part Overview

The IRF1405ZSTRLPBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 55V drain-to-source voltage and 75A continuous drain current in a D2PAK surface mount package. This device is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and production continuity. The part operates across a temperature range of -55°C to 175°C and dissipates up to 230W at the case temperature. Substitution requires matching the core electrical specifications: 55V voltage rating, 75A current capability, D2PAK packaging, and compatible gate drive characteristics.

Key Parameters

Parameter	Value	Unit	Condition
Drain-to-Source Voltage (Vdss)	55	V	Maximum rating
Continuous Drain Current (Id)	75	A	@ 25°C (Tc)
On-State Resistance (Rds On)	4.9	mOhm	@ 75A, 10V Vgs
Gate Threshold Voltage (Vgs(th))	4	V	@ 250µA
Gate Charge (Qg)	180	nC	@ 10V Vgs
Power Dissipation (Max)	230	W	@ Tc
Operating Temperature Range	-55 to 175	°C	Tj
Package Type	D2PAK	TO-263-3	Surface Mount
Gate Voltage (Max)	±20	V	Absolute maximum

Substitute Part Grouping Explanation

Substitution of the IRF1405ZSTRLPBF is determined by the following critical parameters:

Primary Matching Criteria:

Drain-to-Source Voltage (Vdss): 55V minimum
Continuous Drain Current (Id): 75A minimum at 25°C case temperature
Package Type: D2PAK (TO-263-3) surface mount
Gate Drive Voltage: 10V compatible
Operating Temperature Range: -55°C to 175°C minimum

Secondary Compatibility Factors:

On-State Resistance (Rds On): Lower or equivalent values acceptable
Gate Charge (Qg): Lower values preferred for faster switching
Power Dissipation: 230W or higher acceptable
Gate Threshold Voltage: 4V nominal acceptable range

Substitute parts are grouped into two categories: Direct Replacements (matching 55V/75A specifications in D2PAK) and Functional Alternatives (higher voltage or current ratings in compatible packages that operate within the same application envelope).

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id (A)	Rds On (mOhm)	Qg (nC)	Pd Max (W)	Package	Status
IRF1405ZSTRLPBF	Infineon	55	75	4.9 @ 75A, 10V	180 @ 10V	230	D2PAK	Obsolete
BUK764R0-55B,118	Nexperia USA Inc.	55	75	4.0 @ 25A, 10V	86 @ 10V	300	D2PAK	Active
STB140NF55T4	STMicroelectronics	55	80	8.0 @ 40A, 10V	142 @ 10V	300	D2PAK	Active
STB150NF55T4	STMicroelectronics	55	120	6.0 @ 60A, 10V	190 @ 10V	300	D2PAK	Active
BUK7610-55AL,118	Nexperia USA Inc.	55	75	10.0 @ 25A, 10V	124 @ 10V	300	D2PAK	Obsolete
PSMN4R6-60BS,118	Nexperia USA Inc.	60	100	4.4 @ 25A, 10V	70.8 @ 10V	211	D2PAK	Active
BUK765R2-40B,118	NXP USA Inc.	40	75	5.2 @ 25A, 10V	52 @ 10V	203	D2PAK	Active
FDB045AN08A0	onsemi	75	90	4.5 @ 80A, 10V	138 @ 10V	310	D2PAK	Active
IXFA230N075T2-7	IXYS	75	230	4.2 @ 50A, 10V	178 @ 10V	480	TO-263-7	Active
IXTA230N075T2	IXYS	75	230	4.2 @ 50A, 10V	178 @ 10V	480	TO-263AA	Active

Engineering Selection Recommendations

Direct Replacement (55V, 75A, D2PAK):

BUK764R0-55B,118 is the primary recommended substitute. This part matches the voltage and current specifications of the IRF1405ZSTRLPBF while offering improved performance characteristics: lower on-state resistance (4.0 mOhm vs. 4.9 mOhm), reduced gate charge (86 nC vs. 180 nC), and higher power dissipation capability (300W vs. 230W). The device is active in production, carries AEC-Q101 automotive qualification, and is RoHS3 compliant. The TrenchMOS™ technology provides enhanced switching performance suitable for power conversion applications.

Alternative with Higher Current Rating (55V, 80A+, D2PAK):

STB140NF55T4 and STB150NF55T4 provide higher current ratings (80A and 120A respectively) while maintaining the 55V voltage specification and D2PAK package. Both devices are active, RoHS3 compliant, and feature STripFET™ II technology. These parts are suitable for applications requiring design margin or future current scaling. STB150NF55T4 offers the highest current capability at 120A.

Higher Voltage Alternative (60V-75V, D2PAK):

PSMN4R6-60BS,118 operates at 60V with 100A capability, providing voltage and current margin over the original specification. FDB045AN08A0 offers 75V rating with 90A continuous current in a D2PAK package, suitable for applications requiring higher voltage headroom. Both are active production parts with RoHS3 compliance.

Lower Voltage Alternative (40V, D2PAK):

BUK765R2-40B,118 is rated for 40V with 75A current in D2PAK packaging. This part is suitable only for applications where the 40V rating is sufficient and provides the lowest gate charge (52 nC) among D2PAK options.

Higher Current Density Alternatives (75V, 230A, TO-263 variants):

IXFA230N075T2-7 and IXTA230N075T2 provide significantly higher current capability (230A) at 75V in TO-263 package variants. These are suitable for applications requiring substantial current capacity or where the TO-263-7 or TO-263AA package footprints are acceptable. Both are active production parts with RoHS3 compliance.

Product Status Consideration:

The IRF1405ZSTRLPBF is obsolete. All recommended substitutes except BUK7610-55AL,118 are active production parts, ensuring long-term availability and supply chain stability.

Frequently Asked Questions (FAQ)

Q: Can I use STB150NF55T4 as a direct replacement for IRF1405ZSTRLPBF?

A: Yes. STB150NF55T4 meets the core substitution criteria: 55V Vdss rating, 120A continuous drain current (exceeds 75A requirement), D2PAK package, and compatible gate drive voltage. The higher current rating provides design margin. Both devices operate across -55°C to 175°C. Verify PCB thermal design accommodates the different Rds On characteristics.

Q: What is the difference between BUK764R0-55B,118 and BUK7610-55AL,118?

A: Both are 55V/75A D2PAK MOSFETs from Nexperia. BUK764R0-55B,118 is active production with 4.0 mOhm Rds On and 86 nC gate charge. BUK7610-55AL,118 is obsolete with 10.0 mOhm Rds On and 124 nC gate charge. BUK764R0-55B,118 offers superior electrical performance and current availability.

Q: Can I use PSMN4R6-60BS,118 if my circuit operates below 55V?

A: Yes. PSMN4R6-60BS,118 is rated for 60V maximum Vdss, which is higher than the 55V requirement. The device will operate safely in circuits designed for 55V or lower. The 100A current rating exceeds the 75A specification. Verify that the higher gate charge (70.8 nC) is compatible with your gate drive circuit.

Q: Why would I choose FDB045AN08A0 over BUK764R0-55B,118?

A: FDB045AN08A0 operates at 75V, providing 20V additional voltage margin compared to the 55V specification. This is beneficial for applications with voltage transients or where future design upgrades may require higher voltage tolerance. The 90A current rating exceeds 75A. The trade-off is higher input capacitance (6600 pF vs. 4780 pF in the original part).

Q: Are IXFA230N075T2-7 and IXTA230N075T2 pin-compatible with IRF1405ZSTRLPBF?

A: No. IXFA230N075T2-7 uses TO-263-7 package (7 leads plus tab) and IXTA230N075T2 uses TO-263AA package (3 leads plus tab). The IRF1405ZSTRLPBF uses TO-263-3 D2PAK (2 leads plus tab). These parts require PCB redesign. They are suitable only when higher current capacity (230A) justifies the layout modification.

Q: What does AEC-Q101 qualification mean for automotive applications?

A: AEC-Q101 is an automotive electronics council qualification standard for discrete semiconductors. Parts carrying this certification (BUK764R0-55B,118, STB140NF55T4, STB150NF55T4, PSMN4R6-60BS,118, BUK765R2-40B,118) meet stringent reliability, temperature cycling, and quality requirements for automotive use. This certification is not present on the original IRF1405ZSTRLPBF.

Q: How do I determine if gate charge differences affect my application?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. Lower gate charge (BUK764R0-55B,118 at 86 nC) enables faster switching and lower gate drive power loss compared to higher values (STB150NF55T4 at 190 nC). For high-frequency switching applications, lower gate charge is preferred. For low-frequency applications, the difference is negligible.

Q: Is RoHS3 compliance important for my design?

A: RoHS3 compliance indicates the part contains no restricted substances (lead, cadmium, mercury, etc.) and meets environmental regulations for EU and many other markets. All recommended active production substitutes carry RoHS3 compliance. If your application or market requires RoHS compliance, verify this specification before selection.

Q: Can I parallel multiple MOSFETs to increase current capacity?

A: Paralleling is possible but requires careful design. Matched Rds On values are critical to ensure equal current distribution. BUK764R0-55B,118 and STB140NF55T4 have similar Rds On characteristics and can be paralleled more effectively than parts with significantly different values. Consult device datasheets for paralleling guidelines and thermal management requirements.

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