IRF1405STRR N-Channel MOSFET 55V 131A D2PAK Equivalent & Substitute Parts

Part Overview

The IRF1405STRR is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 55V drain-to-source voltage with 131A continuous drain current at 25°C. This device is housed in a D2PAK (TO-263-3) surface mount package and is part of the HEXFET® series. The part is classified as obsolete, making identification of equivalent and substitute components essential for design continuity and procurement planning. Substitute parts must maintain compatibility across electrical ratings, thermal performance, and mechanical packaging to ensure direct replacement capability in existing circuit designs.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	55	V
Continuous Drain Current (Id) @ 25°C	131	A (Tc)
On-State Resistance (Rds On) @ 101A, 10V	5.3	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	260	nC
Power Dissipation (Max)	200	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	D2PAK (TO-263-3)	Surface Mount
RoHS Status	Non-compliant	—

Substitute Part Grouping Explanation

Substitution of the IRF1405STRR is determined by the following critical electrical and mechanical parameters:

Voltage Rating (Vdss): All substitute parts must maintain a minimum Vdss of 55V to ensure safe operation within the original design voltage envelope. Parts rated at 60V or higher are acceptable as they provide additional voltage margin.

Continuous Drain Current (Id): The IRF1405STRR delivers 131A at 25°C. Substitute parts must meet or exceed this current rating to maintain equivalent current-handling capability. Parts with lower current ratings (80A, 100A, 120A) represent reduced-current alternatives suitable only when circuit topology permits lower current operation.

On-State Resistance (Rds On): The 5.3 mOhm specification at 101A, 10V determines conduction losses. Substitute parts with comparable or lower Rds On values maintain thermal performance equivalence.

Package Type: All listed substitutes use D2PAK (TO-263-3) surface mount packaging, ensuring mechanical and thermal interface compatibility with existing PCB layouts.

Operating Temperature Range: All parts operate across -55°C to 175°C, maintaining thermal specification alignment.

RoHS Compliance: The original part is RoHS non-compliant. Substitute parts with ROHS3 compliance represent design upgrades for new applications or compliance-driven redesigns.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Pd Max (W)	Package	Status	RoHS
IRF1405STRR	Infineon	55	131	5.3 @ 101A	260 @ 10V	200	D2PAK	Obsolete	Non-compliant
IRF1405STRLPBF	Infineon	55	131	5.3 @ 101A	260 @ 10V	200	D2PAK	Active	ROHS3
STB150NF55T4	STMicroelectronics	55	120	6 @ 60A	190 @ 10V	300	D2PAK	Active	ROHS3
IXTA200N055T2	IXYS	55	200	4.2 @ 50A	109 @ 10V	360	TO-263AA	Active	ROHS3
IPB054N06N3GATMA1	Infineon	60	80	5.4 @ 80A	82 @ 10V	115	D2PAK	Last Time Buy	ROHS3
PSMN4R6-60BS,118	Nexperia	60	100	4.4 @ 25A	70.8 @ 10V	211	D2PAK	Active	ROHS3
BUK7610-55AL,118	Nexperia	55	75	10 @ 25A	124 @ 10V	300	D2PAK	Obsolete	ROHS3

Engineering Selection Recommendations

Parametric Equivalent (Direct Replacement):

IRF1405STRLPBF is the parametric equivalent of IRF1405STRR. Both parts share identical electrical specifications: 55V Vdss, 131A continuous drain current, 5.3 mOhm Rds On, and 200W power dissipation. The primary distinction is product status and compliance: IRF1405STRLPBF is active and ROHS3 compliant, whereas IRF1405STRR is obsolete and RoHS non-compliant. This part is suitable for direct substitution in all applications without circuit modification.

High-Current Alternative (Performance Upgrade):

IXTA200N055T2 provides enhanced current-handling capability at 200A continuous drain current, compared to the original 131A specification. This part maintains the 55V voltage rating and offers superior thermal performance with 360W maximum power dissipation. The lower Rds On of 4.2 mOhm reduces conduction losses. IXTA200N055T2 is suitable for applications requiring increased current margin or thermal headroom. Active product status and ROHS3 compliance support long-term availability.

Balanced Alternative (Current Reduction):

STB150NF55T4 operates at 120A continuous drain current, slightly below the original 131A specification. This part maintains 55V Vdss and offers 300W power dissipation with improved thermal characteristics. The higher Rds On of 6 mOhm results in marginally increased conduction losses. STB150NF55T4 is suitable for applications where the 120A rating meets circuit requirements. Active status and ROHS3 compliance ensure procurement continuity.

Voltage-Rated Alternative (60V Rating):

PSMN4R6-60BS,118 and IPB054N06N3GATMA1 both operate at 60V Vdss, providing additional voltage margin over the original 55V specification. PSMN4R6-60BS,118 delivers 100A at 211W power dissipation with 4.4 mOhm Rds On. IPB054N06N3GATMA1 delivers 80A at 115W power dissipation with 5.4 mOhm Rds On. Both parts are suitable for applications where the reduced current rating is acceptable and the higher voltage rating provides design flexibility. PSMN4R6-60BS,118 is active; IPB054N06N3GATMA1 is Last Time Buy status.

Automotive-Qualified Alternative:

BUK7610-55AL,118 is AEC-Q101 qualified and suitable for automotive applications. This part operates at 55V Vdss with 75A continuous drain current and 300W power dissipation. The higher Rds On of 10 mOhm indicates increased conduction losses. This part is suitable only for applications where the 75A current rating is sufficient and automotive qualification is required. Product status is obsolete.

Frequently Asked Questions (FAQ)

Q: Can IRF1405STRLPBF be used as a direct replacement for IRF1405STRR?

A: Yes. IRF1405STRLPBF is a parametric equivalent with identical electrical specifications. The part is active and ROHS3 compliant, making it the recommended direct replacement. No circuit modification is required.

Q: What is the difference between the IRF1405STRR and IXTA200N055T2?

A: Both parts operate at 55V Vdss and use D2PAK packaging. The primary differences are continuous drain current (131A vs. 200A), on-state resistance (5.3 mOhm vs. 4.2 mOhm), and power dissipation (200W vs. 360W). IXTA200N055T2 provides higher current capacity and lower conduction losses, making it suitable for applications requiring enhanced performance.

Q: Can I use a 60V-rated MOSFET in place of the 55V IRF1405STRR?

A: Yes, provided the circuit design permits. Parts such as PSMN4R6-60BS,118 and IPB054N06N3GATMA1 operate at 60V Vdss, which is compatible with 55V circuit designs. The higher voltage rating provides additional safety margin. However, verify that the reduced current rating (100A or 80A) meets circuit requirements.

Q: What does "Last Time Buy" status mean for IPB054N06N3GATMA1?

A: Last Time Buy status indicates that the manufacturer has announced end-of-life for this part. Existing inventory may be available, but no future production is planned. For new designs, select active-status alternatives such as PSMN4R6-60BS,118 or IRF1405STRLPBF to ensure long-term supply continuity.

Q: Are all substitute parts available in D2PAK packaging?

A: Yes. All listed substitute parts use D2PAK (TO-263-3) surface mount packaging, ensuring mechanical and thermal interface compatibility with existing PCB layouts. IXTA200N055T2 uses TO-263AA variant, which is mechanically and thermally equivalent to D2PAK.

Q: What is the significance of RoHS compliance for substitute selection?

A: The original IRF1405STRR is RoHS non-compliant. All listed substitute parts are ROHS3 compliant, meeting current environmental and regulatory requirements. For new designs or compliance-driven applications, ROHS3-compliant parts are required. For legacy system maintenance, non-compliant parts may be acceptable if regulatory constraints do not apply.

Q: How do I determine which substitute part is best for my application?

A: Selection depends on three factors: (1) required continuous drain current, (2) acceptable on-state resistance and conduction losses, and (3) compliance requirements. If your circuit requires 131A at 55V with minimal losses, use IRF1405STRLPBF. If higher current capacity is needed, use IXTA200N055T2. If current requirements are lower, use STB150NF55T4 or voltage-rated alternatives.

Q: What is gate charge (Qg) and why does it vary among substitutes?

A: Gate charge represents the total charge required to switch the MOSFET from off to on state. Lower gate charge (such as 70.8 nC in PSMN4R6-60BS,118) results in faster switching and lower gate drive power requirements. Higher gate charge (such as 260 nC in IRF1405STRR) requires more gate drive energy but may offer other performance benefits. Select based on gate drive circuit capability and switching frequency requirements.

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