IRF1404ZSPBF N-Channel 40V 180A MOSFET Equivalent & Substitute Parts

Part Overview

The IRF1404ZSPBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 40V drain-to-source voltage with 180A continuous drain current at 25°C. This device is packaged in D2PAK (TO-263-3) surface mount configuration and is designed for high-current switching applications. The part is currently discontinued at DiGi Electronics, making identification of equivalent substitute components essential for design continuity and procurement planning. Substitute parts must maintain compatibility across voltage ratings, current handling capability, package type, and thermal characteristics to ensure direct replacement functionality.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	40	V
Continuous Drain Current (Id) @ 25°C	180	A
On-State Resistance (Rds On) @ 75A, 10V	3.7	mOhm
Gate Threshold Voltage (Vgs(th)) @ 150µA	4	V
Gate Charge (Qg) @ 10V	150	nC
Maximum Gate Voltage (Vgs)	±20	V
Input Capacitance (Ciss) @ 25V	4340	pF
Power Dissipation (Max)	200	W
Operating Temperature Range	-55 to 175	°C
Package Type	D2PAK (TO-263-3)	Surface Mount
Series	HEXFET®	—

Substitute Part Grouping Explanation

Substitution of the IRF1404ZSPBF is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal 40V
FET Type: Must be N-Channel
Technology: Must be MOSFET (Metal Oxide)
Package: Must be D2PAK (TO-263-3) surface mount
Operating Temperature Range: Must support -55°C to 175°C

Secondary Compatibility Parameters:

Continuous Drain Current (Id): Substitute must meet or exceed 180A at 25°C
On-State Resistance (Rds On): Lower or equal values indicate improved performance
Gate Charge (Qg): Lower values reduce switching losses
Input Capacitance (Ciss): Affects gate drive requirements
Power Dissipation: Must support thermal requirements of the application

The identified substitute parts meet the primary criteria of 40V Vdss rating and D2PAK packaging. However, current ratings differ: BUK964R4-40B,118 provides 75A continuous drain current, and STB120N4F6 provides 80A continuous drain current. These substitutes are suitable only for applications where the required continuous drain current does not exceed their respective ratings.

Parameter Comparison

Parameter	IRF1404ZSPBF (Main)	BUK964R4-40B,118	STB120N4F6	Unit
Manufacturer	Infineon Technologies	Nexperia USA Inc.	STMicroelectronics	—
Drain-to-Source Voltage (Vdss)	40	40	40	V
Continuous Drain Current (Id) @ 25°C	180	75	80	A
On-State Resistance (Rds On)	3.7 @ 75A, 10V	4 @ 25A, 10V	4 @ 40A, 10V	mOhm
Gate Threshold Voltage (Vgs(th))	4 @ 150µA	2 @ 1mA	4 @ 250µA	V
Gate Charge (Qg)	150 @ 10V	64 @ 5V	65 @ 10V	nC
Maximum Gate Voltage (Vgs)	±20	±15	±20	V
Input Capacitance (Ciss) @ 25V	4340	7124	3850	pF
Power Dissipation (Max)	200	254	110	W
Operating Temperature Range	-55 to 175	-55 to 175	-55 to 175	°C
Package Type	D2PAK (TO-263-3)	D2PAK (TO-263-3)	D2PAK (TO-263-3)	Surface Mount
Product Status	Discontinued	Active	Active	—
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	—

Engineering Selection Recommendations

IRF1404ZSPBF Discontinuation Status: The IRF1404ZSPBF is discontinued at DiGi Electronics. Designs currently using this component require alternative sourcing or substitution planning.

BUK964R4-40B,118 (Nexperia USA Inc.): This substitute is an active product with AEC-Q101 automotive qualification. It maintains the 40V Vdss rating and D2PAK package compatibility. The continuous drain current rating of 75A is significantly lower than the original 180A specification. This substitute is suitable only for applications where the maximum required continuous drain current does not exceed 75A. The device features lower gate charge (64 nC @ 5V) compared to the original part, resulting in reduced switching losses. The lower maximum gate voltage rating (±15V versus ±20V) must be verified against circuit gate drive specifications. RoHS3 compliance and MSL 1 rating match the original part.

STB120N4F6 (STMicroelectronics): This substitute is an active product with AEC-Q101 automotive qualification. It maintains the 40V Vdss rating and D2PAK package compatibility. The continuous drain current rating of 80A is lower than the original 180A specification. This substitute is suitable only for applications where the maximum required continuous drain current does not exceed 80A. The device features comparable gate charge (65 nC @ 10V) to the original part. The maximum gate voltage rating (±20V) matches the original specification. Input capacitance (3850 pF) is lower than the original part, potentially reducing gate drive requirements. RoHS3 compliance and MSL 1 rating match the original part.

Substitution Applicability: Both substitute parts are suitable for direct replacement only in applications where the circuit design does not require the full 180A continuous drain current capability of the original IRF1404ZSPBF. Applications requiring continuous drain currents exceeding 75A or 80A respectively cannot use these substitutes without circuit redesign or parallel device configuration.

Frequently Asked Questions (FAQ)

Q: Can BUK964R4-40B,118 or STB120N4F6 directly replace IRF1404ZSPBF in all applications?

A: No. Both substitute parts have lower continuous drain current ratings (75A and 80A respectively) compared to the original part (180A). Direct replacement is only possible in applications where the actual circuit current requirements do not exceed the substitute part's rating. Applications requiring the full 180A capability require alternative solutions.

Q: What is the primary difference between the two substitute parts?

A: Both maintain 40V Vdss and D2PAK packaging. BUK964R4-40B,118 offers 75A continuous drain current with lower gate charge (64 nC @ 5V) and higher input capacitance (7124 pF). STB120N4F6 offers 80A continuous drain current with comparable gate charge (65 nC @ 10V) and lower input capacitance (3850 pF). STB120N4F6 has a lower maximum power dissipation rating (110W versus 254W).

Q: Are the substitute parts automotive qualified?

A: Yes. Both BUK964R4-40B,118 and STB120N4F6 carry AEC-Q101 automotive qualification, meeting automotive industry reliability standards.

Q: Do the substitute parts have the same package dimensions?

A: Yes. All three parts use D2PAK (TO-263-3) surface mount packaging with identical lead configurations and thermal tab placement, enabling direct PCB footprint compatibility.

Q: What is the impact of different gate threshold voltages on circuit operation?

A: BUK964R4-40B,118 has a lower gate threshold voltage (2V @ 1mA) compared to IRF1404ZSPBF (4V @ 150µA) and STB120N4F6 (4V @ 250µA). Lower threshold voltage results in faster turn-on at lower gate drive voltages. Gate drive circuits must be verified to ensure adequate voltage margin above the threshold voltage for reliable switching.

Q: Can these parts be used in parallel to achieve higher current ratings?

A: Parallel operation of different MOSFET types is not recommended without detailed circuit analysis and matching considerations. Current sharing between devices with different on-state resistances and threshold voltages requires careful design to prevent unequal current distribution and thermal stress.

Q: What is the significance of the ±15V maximum gate voltage limit on BUK964R4-40B,118?

A: The BUK964R4-40B,118 has a lower maximum gate voltage rating (±15V) compared to the original part (±20V). Gate drive circuits must be designed to limit gate voltage to ±15V maximum. Exceeding this rating risks gate oxide damage and device failure.

Q: Are all three parts RoHS3 compliant?

A: Yes. IRF1404ZSPBF, BUK964R4-40B,118, and STB120N4F6 are all ROHS3 compliant with MSL 1 (Unlimited) moisture sensitivity rating, meeting environmental and reliability standards for commercial and industrial applications.

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