Infineon Technologies IRF1404STRR Equivalent & Substitute Parts Reference

Part Overview

The IRF1404STRR from Infineon Technologies is an N-Channel MOSFET transistor, featuring 40V drain-source voltage and a continuous drain current of 162A (Tc), provided in a D2PAK, TO-263-3 (2 Leads + Tab) package. With a maximum Rds(on) of 4mOhm and gate charge of 200nC, the IRF1404STRR is well-suited for high-current, low-voltage switching applications. The part is categorized as obsolete, necessitating the identification of compatible alternatives for ongoing production and maintenance.

Substiute Parts

IRF1404STRR
Infineon TechnologiesIn Stock: 1009IRF1404STRR Datasheet
IRF1404STRR
Current Part
IRF1404STRLPBF
Infineon TechnologiesIn Stock: 1394IRF1404STRLPBF Datasheet
IRF1404STRLPBF
Parametric Equivalent
BUK964R4-40B,118
Nexperia USA Inc.In Stock: 8192BUK964R4-40B,118 Datasheet
BUK964R4-40B,118
MFR Recommended
STB120N4F6
STMicroelectronicsIn Stock: 15166STB120N4F6 Datasheet
STB120N4F6
MFR Recommended
STB120N4LF6
STMicroelectronicsIn Stock: 15511STB120N4LF6 Datasheet
STB120N4LF6
MFR Recommended

Key Parameters

Parameter Main Part Value Description
Manufacturer Part Number IRF1404STRR Unique identifier for main part
Category Transistors, FETs, MOSFETs Product classification
FET Type N-Channel Device polarity
Technology MOSFET (Metal Oxide) Type of FET
Drain to Source Voltage (Vdss) 40 V Maximum voltage between drain and source
Current - Continuous Drain (Id) @ 25°C 162A (Tc) Continuous current capability
Drive Voltage (Max Rds On, Min Rds On) 10V Gate voltage for specified Rds(on)
Rds On (Max) @ Id, Vgs 4mOhm @ 95A, 10V Maximum drain-source on resistance
Vgs(th) (Max) @ Id 4V @ 250µA Max gate threshold voltage
Gate Charge (Qg) (Max) @ Vgs 200 nC @ 10 V Maximum total gate charge
Vgs (Max) ±20V Maximum gate-source voltage
Input Capacitance (Ciss) (Max) @ Vds 7360 pF @ 25 V Maximum input capacitance
Power Dissipation (Max) 3.8W (Ta), 200W (Tc) Maximum device dissipation
Operating Temperature -55°C ~ 175°C (TJ) Operating junction temperature range
Mounting Type Surface Mount Physical package format
Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Package style
Supplier Device Package D2PAK Standardized supplier package
RoHS Status RoHS non-compliant Environmental compliance

Substitute Part Grouping Explanation

Substitute part selection for the IRF1404STRR is strictly based on the following key parameters: N-Channel configuration, MOSFET (Metal Oxide) technology, 40V Drain-Source Voltage (Vdss), comparable maximum Continuous Drain Current (Id), identical or lower maximum Rds(on), compatible Gate-Source Voltage ratings, similar packaging (D2PAK, TO-263-3), and matching or superior power dissipation and thermal ratings. Only parts matching these criteria are considered suitable equivalents or substitutes within the designated product category.

Parameter Comparison

Parameter IRF1404STRR IRF1404STRLPBF BUK964R4-40B,118 STB120N4F6 STB120N4LF6
Manufacturer Infineon Technologies Infineon Technologies Nexperia USA Inc. STMicroelectronics STMicroelectronics
Category Transistors, FETs, MOSFETs Transistors, FETs, MOSFETs Transistors, FETs, MOSFETs Transistors, FETs, MOSFETs Transistors, FETs, MOSFETs
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V 40 V 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 162A (Tc) 162A (Tc) 75A (Tc) 80A (Tc) 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 5V, 10V 10V 5V, 10V
Rds On (Max) @ Id, Vgs 4mOhm @ 95A, 10V 4mOhm @ 95A, 10V 4mOhm @ 25A, 10V 4mOhm @ 40A, 10V 4mOhm @ 40A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 2V @ 1mA 4V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 200 nC @ 10 V 200 nC @ 10 V 64 nC @ 5 V 65 nC @ 10 V 80 nC @ 10 V
Vgs (Max) ±20V ±20V ±15V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 7360 pF @ 25 V 7360 pF @ 25 V 7124 pF @ 25 V 3850 pF @ 25 V 4300 pF @ 25 V
Power Dissipation (Max) 3.8W (Ta), 200W (Tc) 3.8W (Ta), 200W (Tc) 254W (Tc) 110W (Tc) 110W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package D2PAK D2PAK D2PAK TO-263 (D2PAK) TO-263 (D2PAK)
RoHS Status RoHS non-compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)
REACH Status REACH Unaffected REACH Unaffected REACH Unaffected REACH Unaffected REACH Unaffected
ECCN EAR99 EAR99 EAR99 EAR99 EAR99
HTSUS 8541.29.0095 8541.29.0095 8541.29.0095 8541.29.0095 8541.29.0095

Engineering Selection Recommendations

The IRF1404STRR is obsolete and RoHS non-compliant. Substitute selection should prioritize currently active parts with matching electrical and mechanical characteristics. Parts IRF1404STRLPBF, BUK964R4-40B,118, STB120N4F6, and STB120N4LF6 are active, ROHS3 compliant, and have equivalent packaging, providing options for use in new designs or maintenance where regulatory compliance and ongoing availability are required.

Frequently Asked Questions (FAQ)

Q: What are the critical parameters for substituting IRF1404STRR in my design?
A: Substitute selection must match N-Channel configuration, MOSFET technology, 40V Drain-Source Voltage, compatible continuous drain current, maximum Rds(on), gate voltage, package type (D2PAK, TO-263-3), and thermal dissipation characteristics.

Q: Are the substitute parts pin-compatible with the IRF1404STRR?
A: All listed substitutes use the TO-263-3, D2PAK (2 Leads + Tab) package, ensuring compatible footprint for surface mount applications.

Q: Can I use an active ROHS3 compliant substitute for designs requiring RoHS compliance?
A: IRF1404STRLPBF, BUK964R4-40B,118, STB120N4F6, and STB120N4LF6 are ROHS3 compliant and suitable for applications requiring updated environmental standards.

Q: Do substitute MOSFETs offer similar thermal performance and electrical ratings?
A: Substitute parts listed provide comparable or sufficient electrical and thermal ratings strictly matching the key substitution criteria.

Q: How do I ensure compatibility regarding input capacitance and gate charge?
A: Input capacitance (Ciss) and gate charge (Qg) values are listed for each part in the comparison table for direct evaluation relative to the original IRF1404STRR component.

Request Quote (Ships tomorrow)