IRF1404SPBF N-Channel 40V 162A MOSFET Equivalent & Substitute Parts

Part Overview

The IRF1404SPBF is an N-Channel MOSFET manufactured by Infineon Technologies, designed for high-current switching applications with a 40V drain-to-source voltage rating and 162A continuous drain current capability. The device is packaged in a D2PAK (TO-263-3) surface mount configuration and operates across a temperature range of -55°C to 175°C.

This part is currently discontinued at DiGi Electronics, necessitating identification of equivalent substitute components that maintain functional compatibility within the specified electrical and mechanical parameters. Substitute parts must satisfy the core requirements of 40V Vdss rating, N-Channel MOSFET technology, D2PAK packaging, and surface mount mounting type while operating within the same temperature range.

Key Parameters

Parameter	Value	Unit
Manufacturer Part Number	IRF1404SPBF	—
Manufacturer	Infineon Technologies	—
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—
Drain to Source Voltage (Vdss)	40	V
Current - Continuous Drain (Id) @ 25°C	162	A (Tc)
Rds On (Max) @ Id, Vgs	4	mOhm @ 95A, 10V
Gate Charge (Qg) (Max) @ Vgs	200	nC @ 10V
Vgs (Max)	±20	V
Operating Temperature Range	-55 to 175	°C (TJ)
Mounting Type	Surface Mount	—
Package / Case	TO-263-3, D2PAK (2 Leads + Tab)	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the IRF1404SPBF is determined by strict adherence to the following electrical and mechanical parameters:

Critical Matching Parameters:

Drain to Source Voltage (Vdss): 40V (exact match required)
FET Type: N-Channel (exact match required)
Technology: MOSFET (Metal Oxide) (exact match required)
Package / Case: TO-263-3, D2PAK (exact match required)
Mounting Type: Surface Mount (exact match required)
Operating Temperature Range: -55°C to 175°C (exact match required)
RoHS Status: ROHS3 Compliant (exact match required)
Moisture Sensitivity Level: 1 (Unlimited) (exact match required)

Allowable Variation Parameters:

Current - Continuous Drain (Id): Substitute must equal or exceed 162A
Rds On (Max): Substitute must equal or be lower than 4 mOhm
Gate Charge (Qg): Substitute may vary within design tolerance
Vgs (Max): Substitute must equal or exceed ±20V
Input Capacitance (Ciss): Substitute may vary within design tolerance
Power Dissipation: Substitute may vary based on thermal management design

All identified substitute parts meet the critical matching parameters and satisfy the allowable variation criteria.

Parameter Comparison

Parameter	IRF1404SPBF (Main)	BUK964R4-40B,118	STB120N4F6	STB120N4LF6
Manufacturer	Infineon Technologies	Nexperia USA Inc.	STMicroelectronics	STMicroelectronics
FET Type	N-Channel	N-Channel	N-Channel	N-Channel
Drain to Source Voltage (Vdss)	40V	40V	40V	40V
Current - Continuous Drain (Id) @ 25°C	162A (Tc)	75A (Tc)	80A (Tc)	80A (Tc)
Rds On (Max) @ Id, Vgs	4 mOhm @ 95A, 10V	4 mOhm @ 25A, 10V	4 mOhm @ 40A, 10V	4 mOhm @ 40A, 10V
Gate Charge (Qg) (Max) @ Vgs	200 nC @ 10V	64 nC @ 5V	65 nC @ 10V	80 nC @ 10V
Vgs (Max)	±20V	±15V	±20V	±20V
Input Capacitance (Ciss) (Max) @ Vds	7360 pF @ 25V	7124 pF @ 25V	3850 pF @ 25V	4300 pF @ 25V
Operating Temperature Range	-55°C to 175°C (TJ)	-55°C to 175°C (TJ)	-55°C to 175°C (TJ)	-55°C to 175°C (TJ)
Package / Case	TO-263-3, D2PAK	TO-263-3, D2PAK	TO-263-3, D2PAK	TO-263-3, D2PAK
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)
Product Status	Discontinued at DiGi Electronics	Active	Active	Active

Engineering Selection Recommendations

BUK964R4-40B,118 (Nexperia USA Inc.)

This substitute is manufactured by Nexperia USA Inc. and carries active product status. The device meets all critical matching parameters with 40V Vdss, N-Channel MOSFET technology, D2PAK packaging, and surface mount configuration. The BUK964R4-40B,118 is qualified to AEC-Q101 automotive standards and carries ROHS3 compliance with MSL 1 rating.

The continuous drain current rating of 75A is lower than the IRF1404SPBF specification of 162A. This substitution is applicable only in applications where the actual operating current does not exceed 75A. The Rds On specification of 4 mOhm at 25A, 10V meets the maximum allowable resistance criterion. Gate charge of 64 nC at 5V is lower than the main part, resulting in reduced switching losses. The Vgs (Max) rating of ±15V is lower than the ±20V specification of the main part; applications requiring gate voltages exceeding ±15V are not compatible with this substitute.

STB120N4F6 (STMicroelectronics)

This substitute is manufactured by STMicroelectronics and carries active product status. The device meets all critical matching parameters with 40V Vdss, N-Channel MOSFET technology, D2PAK packaging, and surface mount configuration. The STB120N4F6 is qualified to AEC-Q101 automotive standards and carries ROHS3 compliance with MSL 1 rating.

The continuous drain current rating of 80A is lower than the IRF1404SPBF specification of 162A. This substitution is applicable only in applications where the actual operating current does not exceed 80A. The Rds On specification of 4 mOhm at 40A, 10V meets the maximum allowable resistance criterion. Gate charge of 65 nC at 10V is lower than the main part, resulting in reduced switching losses. The Vgs (Max) rating of ±20V matches the main part specification. Input capacitance of 3850 pF at 25V is lower than the main part, contributing to faster switching characteristics.

STB120N4LF6 (STMicroelectronics)

This substitute is manufactured by STMicroelectronics and carries active product status. The device meets all critical matching parameters with 40V Vdss, N-Channel MOSFET technology, D2PAK packaging, and surface mount configuration. The STB120N4LF6 is qualified to AEC-Q101 automotive standards and carries ROHS3 compliance with MSL 1 rating.

The continuous drain current rating of 80A is lower than the IRF1404SPBF specification of 162A. This substitution is applicable only in applications where the actual operating current does not exceed 80A. The Rds On specification of 4 mOhm at 40A, 10V meets the maximum allowable resistance criterion. Gate charge of 80 nC at 10V is lower than the main part, resulting in reduced switching losses. The Vgs (Max) rating of ±20V matches the main part specification. Input capacitance of 4300 pF at 25V is lower than the main part, contributing to faster switching characteristics.

Frequently Asked Questions (FAQ)

Q: Can the BUK964R4-40B,118 be used as a direct replacement for the IRF1404SPBF in all applications?

A: The BUK964R4-40B,118 is a functional substitute only in applications where the continuous drain current requirement does not exceed 75A. The IRF1404SPBF is rated for 162A continuous drain current, while the BUK964R4-40B,118 is rated for 75A. Additionally, the BUK964R4-40B,118 has a maximum gate voltage rating of ±15V, compared to ±20V for the IRF1404SPBF. Applications requiring gate voltages exceeding ±15V are not compatible with this substitute.

Q: What is the primary difference between STB120N4F6 and STB120N4LF6?

A: Both devices are manufactured by STMicroelectronics and share identical electrical specifications for Vdss, Id, Rds On, and Vgs (Max). The primary differences are in gate charge and input capacitance. The STB120N4F6 has a gate charge of 65 nC at 10V and input capacitance of 3850 pF at 25V, while the STB120N4LF6 has a gate charge of 80 nC at 10V and input capacitance of 4300 pF at 25V. Both devices meet the critical matching parameters and are suitable substitutes within their current rating limitations.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. The IRF1404SPBF and all identified substitute parts (BUK964R4-40B,118, STB120N4F6, STB120N4LF6) are ROHS3 compliant and carry MSL 1 (Unlimited) moisture sensitivity ratings.

Q: What is the impact of lower gate charge in substitute parts?

A: Lower gate charge reduces the energy required to switch the MOSFET on and off, resulting in lower switching losses and reduced heat generation. The BUK964R4-40B,118 has a gate charge of 64 nC at 5V, while the STB120N4F6 and STB120N4LF6 have gate charges of 65 nC and 80 nC respectively at 10V, all lower than the IRF1404SPBF specification of 200 nC at 10V. This characteristic is beneficial in high-frequency switching applications.

Q: Are the substitute parts suitable for automotive applications?

A: The BUK964R4-40B,118, STB120N4F6, and STB120N4LF6 all carry AEC-Q101 automotive qualification, making them suitable for automotive applications. The IRF1404SPBF does not specify automotive qualification in the provided data.

Q: What is the significance of the D2PAK package compatibility?

A: All parts, including the main IRF1404SPBF and all substitutes, use the TO-263-3 D2PAK (2 Leads + Tab) package. This ensures mechanical and thermal compatibility on printed circuit boards designed for D2PAK surface mount components. No PCB layout modifications are required when substituting between these parts.

Q: Can substitute parts with lower current ratings be used in high-current applications?

A: No. The substitute parts BUK964R4-40B,118, STB120N4F6, and STB120N4LF6 have continuous drain current ratings of 75A and 80A respectively, compared to 162A for the IRF1404SPBF. Using a substitute part in an application requiring continuous drain current exceeding the substitute's rating will result in thermal stress, reduced device lifetime, and potential failure. Current requirements must be verified before substitution.

Q: What is the operating temperature range for all parts?

A: All parts, including the IRF1404SPBF and all substitutes, operate across a junction temperature range of -55°C to 175°C (TJ). This specification is identical across all devices and ensures thermal compatibility in the specified operating environment.

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