IRF1404PBF N-Channel 40V 202A MOSFET Equivalent & Substitute Parts

Part Overview

The IRF1404PBF is an N-Channel MOSFET manufactured by Infineon Technologies in the HEXFET® series, rated for 40V drain-to-source voltage with 202A continuous drain current at 25°C. The device is packaged in TO-220AB through-hole configuration with a maximum power dissipation of 333W at the case temperature. This part carries a "Not For New Designs" product status, indicating it has been superseded in Infineon's product portfolio. Identification of equivalent and substitute parts is necessary for design continuity, inventory management, and sourcing alternatives that maintain electrical and mechanical compatibility while potentially offering improved performance characteristics or active product status.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	40	V
Continuous Drain Current (Id) @ 25°C	202	A
On-State Resistance (Rds On) @ 121A, 10V	4	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	196	nC
Maximum Gate Voltage (Vgs)	±20	V
Input Capacitance (Ciss) @ 25V	5669	pF
Power Dissipation (Max)	333	W
Operating Temperature Range	-55 to 175	°C
Mounting Type	Through Hole	—
Package	TO-220-3	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the IRF1404PBF is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal 40V
Package Type: Must be TO-220-3 or TO-220AB through-hole configuration
FET Type: Must be N-Channel MOSFET
Technology: Must be Metal Oxide Semiconductor (MOSFET)
Operating Temperature Range: Must support -55°C to 175°C minimum
Gate Voltage Rating (Vgs): Must support ±20V

Secondary Compatibility Parameters:

Continuous Drain Current (Id): Substitute parts may have equal or greater current rating
On-State Resistance (Rds On): Lower values indicate improved performance
Gate Charge (Qg): Lower values reduce gate drive requirements
Power Dissipation: Equal or greater rating ensures thermal compatibility
Mounting Type: Must remain through-hole for PCB compatibility

Substitute parts are grouped into two categories: Direct Equivalents (same current rating and package variant) and Performance Alternatives (different current ratings within the same voltage and package class). All substitute parts listed maintain the core 40V Vdss specification and TO-220 package family, ensuring mechanical and electrical interchangeability within the specified parameter ranges.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Power Diss. (W)	Package	Status
IRF1404PBF	Infineon	40	202	4.0	196	333	TO-220AB	Not For New Designs
IRF1404ZPBF	Infineon	40	180	3.7	150	200	TO-220AB	Active
IPP023N04NGXKSA1	Infineon	40	90	2.3	120	167	TO-220-3	Active
IPP041N04NGXKSA1	Infineon	40	80	4.1	56	94	TO-220-3	Active
IPP039N04LGXKSA1	Infineon	40	80	3.9	78	94	TO-220-3	Not For New Designs
CSD18503KCS	National Semiconductor	40	100	4.5	36	188	TO-220-3	Active
DMNH4005SCT	Diodes Incorporated	40	150	4.0	48	165	TO-220AB	Active
PSMN2R2-40PS,127	Nexperia USA Inc.	40	100	2.1	130	306	TO-220AB	Obsolete
PSMN4R5-40PS,127	Nexperia USA Inc.	40	100	4.6	42.3	148	TO-220AB	Obsolete
PSMN8R0-40PS,127	Nexperia USA Inc.	40	77	7.6	21	86	TO-220AB	Obsolete
STP120N4F6	STMicroelectronics	40	80	4.3	65	110	TO-220	Active

Engineering Selection Recommendations

For Active Product Status Priority:

When product lifecycle status is the primary selection criterion, the following active parts are recommended as direct substitutes:

IRF1404ZPBF (Infineon, Active): Maintains the same manufacturer and HEXFET® series lineage. Rated for 180A continuous drain current at 25°C with 3.7mOhm on-state resistance. Provides lower gate charge (150nC) compared to the original part, reducing gate drive power requirements. Suitable for applications where the 202A rating of the original part exceeds system requirements.
IPP023N04NGXKSA1 (Infineon, Active): OptiMOS™ series alternative with 90A continuous drain current. Offers superior on-state resistance of 2.3mOhm and reduced gate charge of 120nC. Appropriate for lower-current applications within the 40V class.
IPP041N04NGXKSA1 (Infineon, Active): OptiMOS™ series with 80A continuous drain current. Delivers the lowest gate charge (56nC) among Infineon alternatives, minimizing gate drive losses. On-state resistance of 4.1mOhm matches the original part specification.
CSD18503KCS (National Semiconductor, Active): NexFET™ series rated for 100A continuous drain current. Features exceptionally low gate charge of 36nC and input capacitance of 3150pF, enabling high-frequency switching applications. Operating temperature range extends to 150°C maximum.
DMNH4005SCT (Diodes Incorporated, Active): Rated for 150A continuous drain current with 4.0mOhm on-state resistance matching the original part. Provides intermediate current capability between lower-rated alternatives and the original 202A specification.
STP120N4F6 (STMicroelectronics, Active): DeepGATE™ and STripFET™ VI series with 80A continuous drain current. Carries AEC-Q101 automotive qualification, suitable for automotive and industrial applications. On-state resistance of 4.3mOhm and gate charge of 65nC provide balanced performance.

For Inventory Continuity (Obsolete Status Acceptable):

Parts with obsolete product status remain electrically and mechanically compatible but should be evaluated for long-term supply availability:

PSMN2R2-40PS,127 (Nexperia, Obsolete): 100A rated with superior 2.1mOhm on-state resistance and highest power dissipation rating of 306W.
PSMN4R5-40PS,127 (Nexperia, Obsolete): 100A rated with lowest gate charge among Nexperia alternatives at 42.3nC.
PSMN8R0-40PS,127 (Nexperia, Obsolete): 77A rated with minimal gate charge of 21nC for low-power gate drive applications.

Selection Logic:

Choose substitutes based on application current requirements and performance priorities. For applications requiring the full 202A capability of the original part, no direct equivalent exists; the highest-rated alternative is DMNH4005SCT at 150A. For applications tolerating reduced current ratings, active-status parts from Infineon (IPP series) or STMicroelectronics (STP120N4F6) provide optimal long-term supply security and performance characteristics.

Frequently Asked Questions (FAQ)

Q: Can I use a substitute part with lower continuous drain current rating than the IRF1404PBF?

A: Yes, provided the application's actual current requirement does not exceed the substitute part's rating. The IRF1404PBF is rated for 202A; however, many applications operate at significantly lower currents. Verify the maximum continuous drain current required by your circuit before selecting a lower-rated substitute. Parts such as IPP041N04NGXKSA1 (80A) or CSD18503KCS (100A) are suitable for applications drawing less than their respective ratings.

Q: Are all substitute parts compatible with the same PCB footprint?

A: All listed substitutes use TO-220 package variants (TO-220AB or TO-220-3), which share identical lead spacing and mounting hole patterns. Physical PCB compatibility is maintained across all substitutes. However, verify that your PCB layout accommodates the specific package variant (TO-220AB has a larger tab than TO-220-3). Consult the mechanical drawings provided by each manufacturer to confirm exact dimensions.

Q: What is the difference between TO-220AB and TO-220-3 packages?

A: Both are through-hole TO-220 packages with identical lead spacing (0.1 inch). The primary difference is the mounting tab: TO-220AB includes a larger metal tab for enhanced heat dissipation, while TO-220-3 has a smaller tab. Electrically, they are equivalent. PCB footprints are interchangeable if the layout accommodates the tab size variation. Verify your heatsink mounting requirements when selecting between these variants.

Q: Why is the IRF1404PBF marked "Not For New Designs"?

A: This designation indicates that Infineon has superseded this part in their product portfolio. The part remains available and functional but is no longer recommended for new circuit designs. Active alternatives such as IRF1404ZPBF or IPP series parts are preferred for new designs. Existing designs using IRF1404PBF may continue to use this part for production, but migration to active alternatives is recommended for long-term supply security.

Q: Can I substitute a part with higher on-state resistance (Rds On)?

A: Higher on-state resistance increases power dissipation and heat generation. Substitution with higher Rds On is acceptable only if the application's thermal design accommodates the increased power loss. For example, PSMN8R0-40PS,127 has 7.6mOhm Rds On compared to the original 4.0mOhm. Calculate the additional power dissipation (P = I²R) at your application's operating current to determine thermal impact.

Q: What does gate charge (Qg) mean, and why does it matter for substitution?

A: Gate charge is the total charge required to switch the MOSFET from off to on state. Lower gate charge reduces the energy required from the gate driver circuit and enables faster switching. Substitutes with lower Qg (such as CSD18503KCS at 36nC) reduce gate drive power consumption and may allow higher switching frequencies. Higher Qg substitutes require more robust gate driver circuits but are otherwise compatible.

Q: Are all substitute parts RoHS3 compliant?

A: All listed substitute parts carry RoHS3 compliance certification except CSD18503KCS, for which RoHS status is not specified in the provided data. Verify RoHS compliance with the manufacturer if this certification is required for your application. All parts listed are REACH Unaffected or REACH compliant.

Q: Can I use CSD18503KCS as a direct replacement if my application operates at temperatures above 150°C?

A: No. CSD18503KCS has a maximum operating temperature of 150°C, while the IRF1404PBF and most alternatives support 175°C. If your application requires operation at 150°C to 175°C, select alternatives with 175°C maximum operating temperature, such as IRF1404ZPBF, IPP series parts, DMNH4005SCT, or STP120N4F6.

Q: Which substitute offers the best overall performance for high-frequency switching applications?

A: CSD18503KCS provides the lowest gate charge (36nC) and input capacitance (3150pF), making it optimal for high-frequency switching. IPP041N04NGXKSA1 also offers excellent high-frequency performance with 56nC gate charge and 4500pF input capacitance. Both parts minimize switching losses and enable higher operating frequencies compared to the original IRF1404PBF.

Q: What is the impact of selecting a substitute with lower power dissipation rating?

A: Power dissipation rating indicates the maximum heat the device can safely dissipate at the case temperature. Selecting a part with lower power dissipation rating (such as IPP041N04NGXKSA1 at 94W versus the original 333W) requires more careful thermal management. Calculate your application's actual power dissipation and ensure it remains below the substitute part's rating. Lower-rated parts are suitable for lower-power applications but may require improved heatsinking or reduced operating current in high-power scenarios.

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